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Articles 31 - 60 of 236
Full-Text Articles in Atomic, Molecular and Optical Physics
Annual Faculty Research Symposium 2022, Oakwood University
Annual Faculty Research Symposium 2022, Oakwood University
Proceedings
No abstract provided.
Augmenting Field Nuclear Forensics Capabilities With Handheld Atomic Spectroscopy Devices For Nuclear Debris Analysis, Ashwin P. Rao, Christopher M. Sutphin, Christina L. Dugan
Augmenting Field Nuclear Forensics Capabilities With Handheld Atomic Spectroscopy Devices For Nuclear Debris Analysis, Ashwin P. Rao, Christopher M. Sutphin, Christina L. Dugan
Faculty Publications
The realm of technical nuclear forensics remains a critical part of joint counterproliferation capabilities. Since the passage of the Nuclear Forensics and Attribution Act (H.R.730) in 2010, the nuclear science community has undertaken steps to bolster national nuclear forensics capabilities under the National Technical Nuclear Forensics Center. Within the technical nuclear forensics umbrella, one particular area of interest involves developing capabilities for in-field analysis of nuclear material. This includes engaging in field training exercises across relevant branches of the military and investigating new technologies to conduct field nuclear forensic analyses. The integration of novel analytical technologies into real-world nuclear detection …
Development Of Advanced Machine Learning Models For Analysis Of Plutonium Surrogate Optical Emission Spectra, Ashwin P. Rao, Phillip R. Jenkins, John D. Auxier Ii, Michael B. Shattan, Anil K. Patnaik
Development Of Advanced Machine Learning Models For Analysis Of Plutonium Surrogate Optical Emission Spectra, Ashwin P. Rao, Phillip R. Jenkins, John D. Auxier Ii, Michael B. Shattan, Anil K. Patnaik
Faculty Publications
This work investigates and applies machine learning paradigms seldom seen in analytical spectroscopy for quantification of gallium in cerium matrices via processing of laser-plasma spectra. Ensemble regressions, support vector machine regressions, Gaussian kernel regressions, and artificial neural network techniques are trained and tested on cerium-gallium pellet spectra. A thorough hyperparameter optimization experiment is conducted initially to determine the best design features for each model. The optimized models are evaluated for sensitivity and precision using the limit of detection (LoD) and root mean-squared error of prediction (RMSEP) metrics, respectively. Gaussian kernel regression yields the superlative predictive model with an RMSEP of …
What Happens When Transition Metal Trichalcogenides Are Interfaced With Gold?, Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter Dowben
What Happens When Transition Metal Trichalcogenides Are Interfaced With Gold?, Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter Dowben
Peter Dowben Publications
Transition metal trichalcogenides (TMTs) are two-dimensional (2D) systems with quasi-one-dimensional (quasi-1D) chains. These 2D materials are less susceptible to undesirable edge defects, which enhances their promise for low-dimensional optical and electronic device applications. However, so far, the performance of 2D devices based on TMTs has been hampered by contact-related issues. Therefore, in this review, a diligent effort has been made to both elucidate and summarize the interfacial interactions between gold and various TMTs, namely, In4Se3, TiS3, ZrS3, HfS3, and HfSe3. X-ray photoemission spectroscopy data, supported by the results …
A Modulated Structure Derived From The Xa-Type Mn2Rusn Heusler Compound, Xingzhong Li, Wen-Yong Zhang, Ralph Skomski, David J. Sellmyer
A Modulated Structure Derived From The Xa-Type Mn2Rusn Heusler Compound, Xingzhong Li, Wen-Yong Zhang, Ralph Skomski, David J. Sellmyer
Nebraska Center for Materials and Nanoscience: Faculty Publications
A modulated structure derived from the inverse Heusler phase (the XA-type and the disordered variant L21B-type) has been observed in rapidly quenched Mn2RuSn ribbons. The powder X-ray diffraction pattern of the quenched ribbons can be indexed as an L21B-type structure. Electron diffraction patterns of the new structure mostly resemble those of the XA-type (and the disordered variant L21B-type) structure and additional reflections with denser spacing indicate a long periodicity. Orthogonal domains of the modulated structure were revealed by a selected-area electron diffraction pattern and the corresponding dark-field transmission electron microscopy images. The structure was …
Localization Effects And Anomalous Hall Conductivity In A Disordered 3d Ferromagnet, Paul M. Shand, Y. Moua, G. Baker, Shah R. Valloppilly, Pavel V. Lukashev, Parashu Kharel
Localization Effects And Anomalous Hall Conductivity In A Disordered 3d Ferromagnet, Paul M. Shand, Y. Moua, G. Baker, Shah R. Valloppilly, Pavel V. Lukashev, Parashu Kharel
Nebraska Center for Materials and Nanoscience: Faculty Publications
We have prepared the Heusler alloy CoFeV0.5Mn0.5Si in bulk form via arc melting. CoFeV0.5Mn0.5Si is ferromagnetic with a Curie temperature of 657 K. The longitudinal resistivity exhibits a minimum at 150 K, which is attributable to competition between quantum interference corrections at low temperatures and inelastic scattering at higher temperatures. The magnetoresistance (MR) is positive and nearly linear at low temperatures and becomes negative at temperatures close to room temperature. The positive MR in the quantum correction regime is evidence of the presence of the enhanced electron interaction as a contributor to …
Theoretical Investigation On Optical Properties Of 2d Materials And Mechanical Properties Of Polymer Composites At Molecular Level, Geeta Sachdeva
Theoretical Investigation On Optical Properties Of 2d Materials And Mechanical Properties Of Polymer Composites At Molecular Level, Geeta Sachdeva
Dissertations, Master's Theses and Master's Reports
The field of two-dimensional (2D) layered materials provides a new platform for studying diverse physical phenomena that are scientifically interesting and relevant for technological applications. Theoretical predictions from atomically resolved computational simulations of 2D materials play a pivotal role in designing and advancing these developments. The focus of this thesis is 2D materials especially graphene and BN studied using density functional theory (DFT) and molecular dynamics (MD) simulations. In the first half of the thesis, the electronic structure and optical properties are discussed for graphene, antimonene, and borophene. It is found that the absorbance in (atomically flat) multilayer antimonene (group …
Photonics Of Time-Varying Media, Emanuele Galiffi, Romain Tirole, Shixiong Yin, Huanan Li, Stefano Vezzoli, Paloma A. Huidobro, Mário G. Silveirinha, Riccardo Sapienza, Andrea Alù, J. B. Pendry
Photonics Of Time-Varying Media, Emanuele Galiffi, Romain Tirole, Shixiong Yin, Huanan Li, Stefano Vezzoli, Paloma A. Huidobro, Mário G. Silveirinha, Riccardo Sapienza, Andrea Alù, J. B. Pendry
Advanced Science Research Center
Time-varying media have recently emerged as a new paradigm for wave manipulation, due to the synergy between the discovery of highly nonlinear materials, such as epsilon-near-zero materials, and the quest for wave applications, such as magnet-free nonreciprocity, multimode light shaping, and ultrafast switching. In this review, we provide a comprehensive discussion of the recent progress achieved with photonic metamaterials whose properties stem from their modulation in time. We review the basic concepts underpinning temporal switching and its relation with spatial scattering and deploy the resulting insight to review photonic time-crystals and their emergent research avenues, such as topological and non-Hermitian …
Moiré-Driven Topological Transitions And Extremeanisotropy In Elastic Metasurfaces, Simon Yves, Matheus Inguaggiato Nora Nora Rosa, Mohit Gupta, Massimo Ruzzene, Andrea Alù
Moiré-Driven Topological Transitions And Extremeanisotropy In Elastic Metasurfaces, Simon Yves, Matheus Inguaggiato Nora Nora Rosa, Mohit Gupta, Massimo Ruzzene, Andrea Alù
Advanced Science Research Center
The twist angle between a pair of stacked 2D materials has been recently shown to control remarkable phenomena, including the emergence of flat-band superconductivity in twisted graphene bilayers, of higher-order topological phases in twisted moiré superlattices, and of topological polaritons in twisted hyperbolic metasurfaces. These discoveries, at the foundations of the emergent field of twistronics, have so far been mostly limited to explorations in atomically thin condensed matter and photonic systems, with limitations on the degree of control over geometry and twist angle, and inherent challenges in the fabrication of carefully engineered stacked multilayers. Here, this work extends twistronics to …
Intracavity Phase Interferometry Based Fiber Sensors, Luke Jameson Horstman
Intracavity Phase Interferometry Based Fiber Sensors, Luke Jameson Horstman
Optical Science and Engineering ETDs
Intracavity Phase Interferometry (IPI) is a detection technique that exploits the inherent sensitivity of a laser's frequency to the parameters of its cavity. Intracavity interferometry is orders of magnitude more sensitive than its extracavity alternatives. This dissertation improves on previous free-space proof-of-concept designs. By implementing the technique in fiber optics, using optical parametric oscillation, and investigating non-Hermitian quantum mechanics and dispersion tailoring enhancement techniques, IPI has become more applicable and sensitive. Ring and linear IPI configurations were realized in this work, both operating as bidirectional fiber optical parametric oscillators. The benefit of using externally pumped synchronous optical parametric oscillation is …
Voltage Controlled Néel Vector Rotation In Zero Magnetic Field, Ather Mahmood, Will Echtenkamp, Mike Street, Jun Lei Wang, Shi Cao, Takashi Komesu, Peter Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Voltage Controlled Néel Vector Rotation In Zero Magnetic Field, Ather Mahmood, Will Echtenkamp, Mike Street, Jun Lei Wang, Shi Cao, Takashi Komesu, Peter Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Peter Dowben Publications
Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse …
Sigesn Light-Emitting Devices: From Optical To Electrical Injection, Yiyin Zhou
Sigesn Light-Emitting Devices: From Optical To Electrical Injection, Yiyin Zhou
Graduate Theses and Dissertations
Si photonics is a fast-developing technology that impacts many applications such as data centers, 5G, Lidar, and biological/chemical sensing. One of the merits of Si photonics is to integrate electronic and photonic components on a single chip to form a complex functional system that features compact, low-cost, high-performance, and reliability. Among all building blocks, the monolithic integration of lasers on Si encountered substantial challenges. Si and Ge, conventional epitaxial material on Si, are incompetent for light emission due to the indirect bandgap. The current solution compromises the hybrid integration of III-V lasers, which requires growing on separate smaller size substrates …
Magnetic Field Perturbations To A Soft X-Ray-Activated Fe (Ii) Molecular Spin State Transition, Guanhua Hao, Alpha T. N’Diaye, Thilini K. Ekanayaka, Ashley S. Dale, Xuanyuan Jiang, Esha Mishra, Corbyn Mellinger, Saeed Yazdani, John W. Freeland, Jian Zhang, Ruihua Cheng, Xiaoshan Xu, Peter Dowben
Magnetic Field Perturbations To A Soft X-Ray-Activated Fe (Ii) Molecular Spin State Transition, Guanhua Hao, Alpha T. N’Diaye, Thilini K. Ekanayaka, Ashley S. Dale, Xuanyuan Jiang, Esha Mishra, Corbyn Mellinger, Saeed Yazdani, John W. Freeland, Jian Zhang, Ruihua Cheng, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
The X-ray-induced spin crossover transition of an Fe (II) molecular thin film in the presence and absence of a magnetic field has been investigated. The thermal activation energy barrier in the soft X-ray activation of the spin crossover transition for [Fe{H2B(pz)2 }2 (bipy)] molecular thin films is reduced in the presence of an applied magnetic field, as measured through X-ray absorption spectroscopy at various temperatures. The influence of a 1.8 T magnetic field is sufficient to cause deviations from the expected exponential spin state transition behavior which is measured in the field free case. We find …
Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Peter Dowben Publications
Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support …
Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu
Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu
Peter Dowben Publications
We have studied the epitaxial CoFe2O4 (111) films grown on Al2O3 (0001) substrates of different thickness at various temperature and discovered colossal intrinsic exchange bias up to 7 ± 2 kOe. X-ray and electron diffraction clearly indicate an interfacial layer about 2 nm of different crystal structure from the “bulk” part of the CoFe2O4 film. The thickness dependence of the exchange bias suggests a hidden antiferromagnetic composition in the interfacial layer that couples to the ferrimagnetic “bulk” part of the CoFe2O4 film as the origin of the exchange …
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Master's Theses
The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …
Realization Of Bsu First Magneto-Optical Trap For The Spatial Confinement Of Rb Atoms Using Next Generation Fiber Optic Capabilities With Minimot, Brahmin Thurber-Carbone
Realization Of Bsu First Magneto-Optical Trap For The Spatial Confinement Of Rb Atoms Using Next Generation Fiber Optic Capabilities With Minimot, Brahmin Thurber-Carbone
Honors Program Theses and Projects
This paper will be a combination of my theoretical and experimental work toward Bridgewater State Universities first Magneto-Optical Trap (MOT) for laser cooling and trapping of neutral atoms in order to study fundamental quantum mechanical behavior of Rubidium (Rb) atoms. The goal of the theoretical aspect is to complete details of well-established works on how the complicated quantum, atomic, and electromagnetic (laser) interactions required to understand the design and operation of the MOT reduce to the physics and mathematics of a damped oscillator. This is made explicitly clear using familiar damped oscillator systems, such as a spring/mass/damping or pendulum/mass/damping (ie …
Magnetism And Topological Hall Effect In Antiferromagnetic Ru2Mnsn-Based Heusler Compounds, Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xingzhong Li, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer
Magnetism And Topological Hall Effect In Antiferromagnetic Ru2Mnsn-Based Heusler Compounds, Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xingzhong Li, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer
Nebraska Center for Materials and Nanoscience: Faculty Publications
Heusler compounds and alloys based on them are of great recent interest because they exhibit a wide variety of spin structures, magnetic properties, and electron-transport phenomena. Their properties are tunable by alloying and we have investigated L21-ordered compound Ru2MnSn and its alloys by varying the atomic Mn:Sn composition. While antiferromagnetic ordering with a Néel temperature of 361 K was observed in Ru2MnSn, the Mn-poor Ru2Mn0.8Sn1.2 alloy exhibits properties of a diluted antiferromagnet in which there are localized regions of uncompensated Mn spins. Furthermore, a noncoplanar spin structure, evident from …
Structural Origin Of Thermal, Mechanical Properties And Morphological Behaviors Of Semiconducting Polymers, Song Zhang
Structural Origin Of Thermal, Mechanical Properties And Morphological Behaviors Of Semiconducting Polymers, Song Zhang
Dissertations
The past decades have witnessed a surging exploration of semiconducting polymers for the application of wearable and flexible organic electronic devices. Despite the increased amounts of molecular engineered polymers and their much-improved electrical performances, a systematic study of the structure-thermal/mechanical property-morphology relationship of semiconducting polymers is still less investigated.
To understand the thin-film mechanical properties, a pseudo-free standing tensile tester was self-built and utilized to obtain their real-time stress-strain behaviors through uniaxial stretching on top of the water surface. It also enables the first quantitative measurement of fracture energy on ultrathin polymeric films. Through multiple mechanical testing methods (i.e., strain-rate …
Voltage-Controlled Magnetic Anisotropy In Antiferromagnetic Mgo-Capped Mnpt Films, P. H. Chang, Wuzhang Fang, T. Ozaki, Kirill Belashchenko
Voltage-Controlled Magnetic Anisotropy In Antiferromagnetic Mgo-Capped Mnpt Films, P. H. Chang, Wuzhang Fang, T. Ozaki, Kirill Belashchenko
Kirill Belashchenko Publications
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is as large as 1.5 and -0.6 pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively. The combination of a widely tunable magnetic anisotropy energy and a large voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.
Simulation Of Optical Properties Of Dielectric Layers From Visible To Near Infrared Spectral Range, Andrew Cochran, Cory Conkel
Simulation Of Optical Properties Of Dielectric Layers From Visible To Near Infrared Spectral Range, Andrew Cochran, Cory Conkel
ONU Student Research Colloquium
Optical properties of dielectrics play a critical role in various applications including the design and manufacture of optical components & devices such as detectors, filters, imagers, lenses, optical coatings, photonic crystals, sensors and waveguides, and solar cells. Radiative properties of varying thicknesses of different dielectrics such as Aluminum Oxide (Al2O3), Silicon Dioxide (SiO2), Indium Tin Oxide (ITO), Magnesium Fluoride (MgF2) and Silicon Nitride (Si3N4) have been simulated and compared in the range of visible to near infrared by mathematical modelling using MATLAB simulations. The results of the evolution of the radiative properties, as a function of dielectric material thickness, on …
Correction To "Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films" [The Journal Of Physical Chemistry Letters (2020) 11:19 (8231-8237) Doi: 10.1021/Acs.Jpclett.0c02209], Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha N'Diaye, Peter Dowben, Ruihua Cheng
Correction To "Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films" [The Journal Of Physical Chemistry Letters (2020) 11:19 (8231-8237) Doi: 10.1021/Acs.Jpclett.0c02209], Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha N'Diaye, Peter Dowben, Ruihua Cheng
Peter Dowben Publications
In our recent publication, Figure 5 was published without adequate due diligence. The correct TOC Abstract graphic and Figure 5 are contained here in this correction. The correct on to off current ratios are in the range of 4 to 5, not 100 and the signal to noise ratios are far less than previously shown.
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,20-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, …
Remote Mesoscopic Signatures Of Induced Magnetic Texture In Graphene, N. Arabchigavkani, R. Somphonsane, H. Ramamoorthy, G. He, J. Nathawat, S. Yin, B. Barut, K. He, M. D. Randle, R. Dixit, K. Sakanashi, N. Aoki, K. Zhang, L. Wang, W. N. Mei, Peter Dowben, J. Fransson, J. P. Bird
Remote Mesoscopic Signatures Of Induced Magnetic Texture In Graphene, N. Arabchigavkani, R. Somphonsane, H. Ramamoorthy, G. He, J. Nathawat, S. Yin, B. Barut, K. He, M. D. Randle, R. Dixit, K. Sakanashi, N. Aoki, K. Zhang, L. Wang, W. N. Mei, Peter Dowben, J. Fransson, J. P. Bird
Peter Dowben Publications
Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this Letter, however, we demonstrate a pronounced breakdown of this universality, due to the interplay of local and remote phenomena in transport. Our experiments are performed in a graphene-based interaction-detection geometry, in which an artificial magnetic texture is induced in the graphene layer by covering a portion of it with a micromagnet. When probing conduction at some distance from this region, the strong influence of remote factors is manifested through the appearance of giant conductance fluctuations, with amplitude much …
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Theses
The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …
Ultrafast Spin-Currents And Charge Conversion At 3d-5d Interfaces Probed By Time-Domain Terahertz Spectroscopy, T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J. M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, Kirill Belashchenko, S. Dhillon, H. Jaffrès
Ultrafast Spin-Currents And Charge Conversion At 3d-5d Interfaces Probed By Time-Domain Terahertz Spectroscopy, T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J. M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, Kirill Belashchenko, S. Dhillon, H. Jaffrès
Kirill Belashchenko Publications
Spintronic structures are extensively investigated for their spin-orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-Transition metal interfaces due to their inverse spin-Hall effect properties. In particular, the intrinsic inverse spin-Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques-ultrafast THz time-domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping …
The Importance Of Frontier Orbital Symmetry In The Adsorption Of Diiodobenzene On Mos2(0001), Prescott E. Evans, Zahra Hooshmand, Talat S. Rahman, Peter Dowben
The Importance Of Frontier Orbital Symmetry In The Adsorption Of Diiodobenzene On Mos2(0001), Prescott E. Evans, Zahra Hooshmand, Talat S. Rahman, Peter Dowben
Peter Dowben Publications
Evidence of a role of frontier orbital symmetry, in the adsorption process of diiodobenzene on MoS2(0001), appears in the huge differences in the rate of adsorption between 1,3-diiodobenzene, 1,2-diiodobenzene and 1,4-diiodobenzene isomers on MoS2. Experiments indicate that the rate of adsorption of 1,3-diiodobenzene on MoS2(0001) is much greater than that of the 1,2-diodobenzene and 1,4-diiodbenzene isomers. As the differences in calculated diiodobenzene isomer-MoS2 system adsorption energies and electron affinities are negligible, frontier orbital symmetry appears to play a significant role in diiodobenzene adsorption on MoS2(0001). The experimental and theory results, in combination, suggest …
Proximity-Induced Magnetization In Graphene: Towards Efficient Spin Gating, Mihovil Bosnar, Ivor Lončarić, P. Lazić, Kirill Belashchenko, Igor Žutić
Proximity-Induced Magnetization In Graphene: Towards Efficient Spin Gating, Mihovil Bosnar, Ivor Lončarić, P. Lazić, Kirill Belashchenko, Igor Žutić
Kirill Belashchenko Publications
Gate-tunable spin-dependent properties could be induced in graphene at room temperature through the magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene (Gr). We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to …
Detection Of Uncompensated Magnetization At The Interface Of An Epitaxial Antiferromagnetic Insulator, Pavel N. Lapa, Min Han Lee, Igor V. Roshchin, Kirill Belashchenko, Ivan K. Schuller
Detection Of Uncompensated Magnetization At The Interface Of An Epitaxial Antiferromagnetic Insulator, Pavel N. Lapa, Min Han Lee, Igor V. Roshchin, Kirill Belashchenko, Ivan K. Schuller
Kirill Belashchenko Publications
We have probed directly the temperature and magnetic field dependence of pinned uncompensated magnetization at the interface of antiferromagnetic FeF2 with Cu, using FeF2-Cu-Co spin valves. Electrons polarized by the Co layer are scattered by the pinned uncompensated moments at the FeF2-Cu interface giving rise to giant magnetoresistance. We determined the direction and magnitude of the pinned uncompensated magnetization at different magnetic fields and temperatures using the angular dependencies of resistance. The strong FeF2 anisotropy pins the uncompensated magnetization along the easy axis independent of the cooling field orientation. Most interestingly, magnetic fields as …
Reinvestigation Of The Intrinsic Magnetic Properties Of (Fe1-Xcox)2b Alloys And Crystallization Behavior Of Ribbons, Tej Nath Lamichhane, Olena Palasyuk, Vladimir P. Antropov, Ivan A. Zhuravlev, Kirill Belashchenko, Ikenna C. Nlebedim, Kevin W. Dennis, Anton Jesche, Matthew J. Kramer, Sergey L. Bud'ko, R. William Mccallum, Paul C. Canfield, Valentin Taufour
Reinvestigation Of The Intrinsic Magnetic Properties Of (Fe1-Xcox)2b Alloys And Crystallization Behavior Of Ribbons, Tej Nath Lamichhane, Olena Palasyuk, Vladimir P. Antropov, Ivan A. Zhuravlev, Kirill Belashchenko, Ikenna C. Nlebedim, Kevin W. Dennis, Anton Jesche, Matthew J. Kramer, Sergey L. Bud'ko, R. William Mccallum, Paul C. Canfield, Valentin Taufour
Kirill Belashchenko Publications
New determination of the magnetic anisotropy from single crystals of (Fe1-xCox)2B alloys are presented. The anomalous temperature dependence of the anisotropy constant is discussed using the standard Callen-Callen theory, which is shown to be insufficient to explain the experimental results. A more material specific study using first-principles calculations with disordered moments approach gives a much more consistent interpretation of the experimental data. Since the intrinsic properties of the alloys with x=0.3-0.35 are promising for permanent magnets applications, initial investigation of the extrinsic properties are described, in particular the crystallization of melt spun ribbons with Cu, Al, …