Physics Commons^™

Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri

Legacy Theses & Dissertations (2009 - 2024)

The scalability of field effect transistor has led to the monumental success of complementary metal-oxide-semiconductor (CMOS) technology. In the past, device scaling was not the major issue to a greater extent. Recently with current technology nodes, transistor characteristics show signs of reduced performance due to short channel effects and other issues related to device scaling. Device designers look for innovative ways to enhance the transistor performance while keeping up with device miniaturization. Successful inventions include the development of tri-gate technology, gate all around (GAA) field effect transistors, silicon-on-insulator substrate, and high-k dielectrics. These developments have enabled the device scaling that …

Physical And Electronic Properties Of Nanoscale 2d Materials, Mathias J. Boland

Theses and Dissertations--Physics and Astronomy

There is a great push towards reducing the size scale of both electronic components and machines. Two dimensional materials, such as graphene, are ideal candidates towards this push, as they are naturally atomically thin. In the case of nanoscale machines, the mechanical properties of the material surfaces become increasingly important. The use of laminar materials, such as graphene and MoS₂, to modify the surface properties, yet maintain nanoscale topographical features, are very attractive. Towards this goal, we have investigated the surface properties of MoS₂ at the nanoscale using Lateral Force Microscopy (LFM). In these investigations, we measure …

Controllable Growth Of Vertically Aligned Graphene On C-Face Sic, Yu Liu, Lianlian Chen, Donovan Hilliard, Qing-Song Huang, Fang Liu, Mao Wang, Roman Böttger, René Hübner, Alpha T. N’Diaye, Elke Arenholz Elke Arenholz, Viton Heera Viton Heera, Wolfgang Skorupa Wolfgang Skorupa, Shengqiang Zhou

Articles

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d0 magnetism is realized …

Enhanced Li Capacity In Functionalized Graphene: A First Principle Study With Van Der Waals Correction, Rajiv K. Chouhan, Pushpa Raghani

Physics Faculty Publications and Presentations

We have investigated the adsorption of Li on graphene oxide using density functional theory. We show a novel and simple approach to achieve a positive lithiation potential on epoxy and hydroxyl functionalized graphene, compared to the negative lithiation potential that has been found on prestine graphene. We included the van der Waals correction into the calculation so as to get a better picture of weak interactions. A positive lithiation potential suggests a favorable adsorption of Li on graphene oxide sheets that can lead to an increase in the specific capacity, which in turn can be used as an anode material …

Measuring Charge Carrier Mobility In Graphene, Christina A. Harmon

Senior Theses

This research reports measurements of electron mobility in Graphene Field Effect Transistors (GFET), gated with liquid. Mobility is a quantity describing how easily charge carriers move through a material. GFET biosensors have the greatest sensitivity when the mobility is high; therefore, increasing mobility should improve sensitivity of these and similar devices. An optimal method was established for preparing samples and taking measurements of a liquid-gate device. Sheet conductivity was measured using van der Pauw geometry and carrier density was determined from measurements of the liquid-gate capacitance. It is shown that mobility improves after the graphene surface is cleaned by an …

Modelling Transient Terahertz Magneto-Spectroscopy Measurements Of P-Type Cvd Graphene Leading To A Negative Photoconductivity., Rhyan Foo Kune

Macalester Journal of Physics and Astronomy

Ultrafast Terahertz (THz) Magneto-Spectroscopy (UTMS) measurements were performed on p-type CVD graphene sample to investigate the intrinsic carrier dynamics of the material. We investigated static and time-resolved THz transmission measurements, in which the sample was photo-excited by a near infrared (NIR) pump pulse, in order to study its behavior in a magnetic field. In these measurements the free carriers were probed to independently measure the carrier density and scattering rate in this film. We observed, in our graphene sample, an increase in transmission related to a negative photoconductivity (decrease in conductivity after photoexcitation) consistent with previous research. This decrease is …

Mid-Ir Excitation Of Graphene, Andrew R. Banman, James Heyman

Macalester Journal of Physics and Astronomy

In this research we investigate how the conductivity of graphene changes in response to mid-infrared photoexcitation. Our p-type sample was formed through chemical vapor deposition. Pump/probe methodology produced the time-resolved Terahertz transmission, from which the photoconductivity was calculated. We probed the sample with energies above and below the Fermi energy, which was determined by Fourier transform infrared spectroscopy. Our results support a model in which heating of the electron gas, leading to high carrier scattering rates, is responsible for a decrease in conductivity. We observe this negative photoconductivity at all pump energies, allowing us to rule out the possibility of …

Mirror Buckling Transitions In Freestanding Graphene Membranes Induced Through Scanning Tunneling Microscopy, James Kevin Schoelz

Graduate Theses and Dissertations

Graphene has the ability to provide for a technological revolution. First isolated and characterized in 2004, this material shows promise in the field of flexible electronics. The electronic properties of graphene can be tuned by controlling the shape of the membrane. Of particular interest in this endeavor are the thermal ripples in graphene membranes. Years of theoretical work by such luminaries as Lev Landau, Rudolf Peierls, David Mermin and Herbert Wagner have established that 2D crystals should not be thermodynamically stable. Experimental research on thin films has supported this finding. Yet graphene exists, and freestanding graphene films have been grown …

Optical Characterization Of Carbon Nanotube Forests, Brian D. Wood

All Graduate Theses and Dissertations, Spring 1920 to Summer 2023

Carbon nanotube forests are vertically grown tubular formations of graphene. Due to their inherent microstructure and geometry, they are ideal light absorbers over a broad spectrum, making this material an excellent absorber in applications such as radiometry, optical calibration, and stray light suppression. Samples were made with several growth conditions and substrates to provide forests of different morphologies. Optical data of these samples were gathered by taking spectroscopic reflectance and transmittance measurements in the mid-infrared spectral range. Results were correlated to the various forest morphologies. From this, the conditions necessary to maximize the absorption of the forests were found and …

Using Graphene To Control Magnetic Anisotropy And Interaction Between Supported Clusters, Sanjubala Sahoo, M Fhokrul Islam, Shiv N. Khanna

Physics Publications

Stabilization of magnetic order in clusters/nanoparticles at elevated temperatures is a fundamentally challenging problem. The magnetic anisotropy energy (MAE) that prevents the thermal fluctuations of the magnetization direction can be around 1–10 K in free transition metal clusters of around a dozen atoms. Here we demonstrate that a graphene support can lead to an order of magnitude enhancement in the anisotropy of supported species. Our studies show that the MAE of supported Co5 and Co13 clusters on graphene increase by factors of 2.6 and 25, respectively. The enhancement is linked to the splitting of selected electronic orbitals that leads to …

Electronic Transport Properties Of Carbon Nanotubes: The Impact Of Atomic Charged Impurities, Ryuichi Tsuchikawa

Electronic Theses and Dissertations

Even changing one atom in nanoscale materials is expected to alter their properties due to their small physical sizes. Such sensitivity can be utilized to modify materials' properties from bottom up and is essential for the utility of nanoscale materials. As such, the impact of extrinsic atomic adsorbates was measured on pristine graphene and a network of carbon nanotubes using atomic hydrogen, cesium atoms, and dye molecules. In order to further quantify such an atomic influence, the resistance induced by a single potassium atom on metallic and semiconducting carbon nanotubes was measured for the first time. Carbon nanotubes are sensitive …

Synthesis, Integration, And Physical Characterization Of Graphene And Carbon Nanotubes, David P. Hunley

Theses and Dissertations--Physics and Astronomy

Graphene and carbon nanotubes are among the hottest topics in physics today. Both materials exhibit numerous remarkable mechanical, electrical, optical, and thermal properties that make them promising materials for use in a large number of diverse applications, especially in the field of nanotechnology. One of the ultimate goals driving the fields of nanoscience and nanotechnology has been the attainment of atomically precise construction of intricate integrated systems consisting of materials with diverse behavior. Specifically, it is desirable to have high performance conductors, semiconductors, and insulators integrated into complex atomically precise arrangements. This dissertation represents the culmination of work that has …

Nano And Nanostructured Materials For Optical Applications, Panit Chantharasupawong

Electronic Theses and Dissertations

Nano and nanostructured materials offer unique physical and chemical properties that differ considerably from their bulk counterparts. For decades, due to their fascinating properties, they have been extensively explored and found to be beneficial in numerous applications. These materials are key components in many cutting-edge optic and photonic technologies, including photovoltaics, waveguides and sensors. In this dissertation, the uses of nano and nanostructured materials for optical applications are investigated in the context of optical limiting, three dimensional displays, and optical sensing. Nanomaterials with nonlinear optical responses are promising candidates for self-activating optical limiters. In the first part of this study, …

Nanoelectronic Devices Using Carbon Nanotubes And Graphene Electrodes: Fabrication And Electronic Transport Investigations, Narae Kang

Electronic Theses and Dissertations

Fabrication of high-performance electronic devices using the novel semiconductors is essential for developing future electronics which can be applicable in large-area, flexible and transparent displays, sensors and solar cells. One of the major bottlenecks in the fabrication of high-performance devices is a large interfacial barrier formation at metal/semiconductor interface originated from Schottky barrier and interfacial dipole barrier which causes inefficient charge injection at the interface. Therefore, having a favorable contact at electrode/semiconductor is highly desirable for high-performance devices fabrication. In this dissertation, the fabrication of nanoelectronic devices and investigation of their transport properties using carbon nanotubes (CNTs) and graphene as …

Research And Development Of Carbon Nanostructured Materials Based Solar Cells, Muatez Zamil Mohammed

Theses and Dissertations

The main goal of this research is to fabricate carbon nanostructured materials, such as carbon nanotubes, graphene, etc., to apply in the groundbreaking third generation photovoltaic devices. I investigated the electric and optical transport on: MWNTs/Si hybrid solar cells, acid-enhanced MWNTs/n-Si heterojunction for light harvesting, photovoltaic properties of CdS/MWNTs/n-Si, n-p-n transistor structure devices, NiOx/graphene/Si double Schottky diodes for enhanced photo-conversion, Cu2O nanorods for hybrid solar cell applications. The desired outcome in researching these novel carbon nanostructured materials is the decrease in fabrication costs. The MWNTs/n-Si junction showed a strong rectifying behavior, while the MWNTs/p-Si junction formed on ohmic-like contact. Photovoltaic …

Electrostatic Force Microscopy And Electrical Isolation Of Etched Few-Layer Graphene Nano-Domains, D. Patrick Hunley, Abhishek Sundararajan, Mathias J. Boland, Douglas R. Strachan

Physics and Astronomy Faculty Publications

Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1×10¹² Ω with a corresponding gap resistivity greater than about …

Collective Edge Modes Near The Onset Of A Graphene Quantum Spin Hall State, Gunpathy Murthy, Efrat Shimshoni, H. A. Fertig

Physics and Astronomy Faculty Publications

Graphene subject to a strong, tilted magnetic field exhibits an insulator-metal transition tunable by tilt angle, attributed to the transition from a canted antiferromagnetic (CAF) to a ferromagnetic (FM) bulk state at filling factor ν=0. We develop a theoretical description for the spin and valley edge textures in the two phases, and the implied evolution in the nature of edge modes through the transition. In particular, we show that the CAF has gapless neutral modes in the bulk, but supports gapped charged edge modes. At the transition to the FM state the charged edge modes become gapless and are …

Transport And Optical Properties Of Low-Dimensional Complex Systems, Andrii Iurov

Dissertations, Theses, and Capstone Projects

Over the last five years of my research work, I, my research was mainly concerned with certain crucial tunneling, transport and optical properties of novel low-dimensional graphitic and carbon-based materials as well as topological insulators. Both single-electron and many-body problems were addressed. We investigated the Dirac electrons transmission through a potential barrier in the presence of circularly polarized light. An anomalous photon-assisted enhanced transmission is predicted and explained in a comparison with the well-known Klein paradox. It is demonstrated that the perfect transmission for nearly-head-on collision in an infinite graphene is suppressed in gapped dressed states of electrons, which is …

Nanoscale Manipulation Of Pristine And Functionalized Freestanding Graphene Using Scanning Tunneling Microscopy, Matthew Ackerman

Graduate Theses and Dissertations

Over the past ten years the 2D material graphene has attracted an enourmous amount of attention from researchers from across diciplines and all over the world. Many of its outstanding electronic properties are present only when it is not interacting with a substrate but is instead freestanding. In this work I demonstrate that pristine and functionalized freestanding graphene can be imaged using a scanning tunneling microscope (STM) and that imaging a flexible 2D surface is fundamentally different from imaging a bulk material due to the attraction between the STM tip and the sample. This attraction can be used to manipulate …

Binding Of Solvated Peptide (Eplqlkm) With A Graphene Sheet Via Simulated Coarse-Grained Approach, Somayyeh Sheikholeslami, R. B. Pandey, Nadiya Dragneva, Wely Floriano, Oleg Rubel, Stephen A. Barr, Zhifeng Kuang, Rajiv Berry, Rajesh Naik, Barry Farmer

Faculty Publications

Binding of a solvated peptide A1 (¹E ²P ³L ⁴Q ⁵L ⁶K ⁷M) with a graphene sheet is studied by a coarse-grained computer simulation involving input from three independent simulated interaction potentials in hierarchy. A number of local and global physical quantities such as energy, mobility, and binding profiles and radius of gyration of peptides are examined as a function of temperature (T). Quantitative differences (e.g., the extent of binding within a temperature range) and qualitative similarities are observed in results from three simulated potentials. Differences in variations of both local and …

Optimization Of Chemical Vapor Deposition Grown Graphene, Andrew Tan

Senior Theses

Graphene can be used as the active film in a gas sensor. To provide the best possible electrical properties, it is important that graphene films be single-layered and single-crystalline. A low vacuum chemical vapor deposition (CVD) chamber was constructed to grow graphene with these properties. The effect of growth parameters, such as annealing times and methane partial pressure, on the quality of graphene was investigated. Raman spectra of graphene were used to quantify the characteristics of the synthesized graphene. Graphene synthesized through CVD has two major peaks, the G (~1570cm^-1) and the 2D peak (~2700 cm^-1). …

Discrete Strain Engineering In Graphene, Cedric Marcus Horvath

Graduate Theses and Dissertations

Graphene has a number of fascinating mechanical and electrical properties. Strain engineering in graphene is the attempt to control its properties with mechanical strain. Previous research in this area has come up with an approach using a continuum theory to describe the strain induced gauge fields in graphene; however, this approach is only valid for small strains (5% at most). A discrete framework is being developed in Arkansas that can more accurately calculate the deformation (electrical) and (pseudo-)magnetic gauge fields created by large strains. Computational simulations were carried out and used to get discrete atomic positions for strained, suspended graphene …

Atomic-Scale Characterization And Manipulation Of Freestanding Graphene Using Adapted Capabilities Of A Scanning Tunneling Microscope, Steven Barber

Graduate Theses and Dissertations

Graphene was the first two-dimensional material ever discovered, and it exhibits many unusual phenomena important to both pure and applied physics. To ensure the purest electronic structure, or to study graphene's elastic properties, it is often suspended over holes or trenches in a substrate. The aim of the research presented in this dissertation was to develop methods for characterizing and manipulating freestanding graphene on the atomic scale using a scanning tunneling microscope (STM). Conventional microscopy and spectroscopy techniques must be carefully reconsidered to account for movement of the extremely flexible sample.

First, the acquisition of atomic-scale images of freestanding graphene …

Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha

Legacy Theses & Dissertations (2009 - 2024)

The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.

Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi

Legacy Theses & Dissertations (2009 - 2024)

The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …

Growth And Characterization Of Graphene On Cuni Substrates, Parul Tyagi

Legacy Theses & Dissertations (2009 - 2024)

Graphene is a single layer of sp2 bonded carbon atoms that crystallizes in the honeycomb structure. Because of its true two-dimensional structure, it has very unique electrical properties, including a very high carrier mobility that is symmetric for holes and electrons. To realize these unique properties, it is important to develop a method for growing graphene films with uniform thickness and low defect density. One of the most popular methods of growth is by chemical vapor deposition on Cu substrates, because it is self-limited. However many applications require the growth of graphene films that are more than one atomic layer …

Electronic Properties And Atomic Scale Microscopy Of Two Dimensional Materials: Graphene And Molybdenum Disulfide, Jyoti Katoch

Electronic Theses and Dissertations

Novel two dimensional nanoscale materials like graphene and metal dichalcogenides (MX2) have attracted the attention of the scientific community, due to their rich physics and wide range of potential applications. It has been shown that novel graphene based transparent conductors and radiofrequency transistors are competitive with the existing technologies. Graphene’s properties are influenced sensitively by adsorbates and substrates. As such not surprisingly, physical properties of graphene are found to have a large variability, which cannot be controlled at the synthesis level, reducing the utility of graphene. As a part of my doctorate dissertation, I have developed atomic hydrogen as a …

Dynamical Spin Injection In Graphene, Simranjeet Singh

Electronic Theses and Dissertations

Within the exciting current trend to explore novel low-dimensional systems, the possibility to inject pure spin currents in graphene and other two-dimensional crystals has attracted considerable attention in the past few years. The theoretical prediction of large spin relaxation times and experimentally observed mesoscopic-scale spin diffusion lengths places graphene as a promising base system for future spintronics devices. This is due to the unique characteristics intrinsic to the two-dimensional lattice of carbon atoms forming graphene, such as the lack of nuclear spins and weak spin-orbit coupling of the charge carriers. Interestingly for some spintronic applications, the latter can be chemically …

Elementary Studies Of Twisted Bilayer Graphene, Branden P. Burns, Yong P. Chen

The Summer Undergraduate Research Fellowship (SURF) Symposium

In the nanotechnology field, some existing materials and applications are harmful to the environment, not efficient for certain tasks, or too expensive to be fully utilized. Graphene is a strong and cheap material that can be used to improve current nanotechnologies for more practical uses in society. Twisted bilayer graphene (TBG) is an orientation of graphene layers that exhibit different properties than regular bilayer graphene. It is made by placing a single layer of graphene on top of another at an angle with respect to the other lattice orientation. Understanding the characteristics of TBG is important to uncover more physics …

Nanoscale Semiconductor Materials And Devices Employing Hybrid 1d And 2d Structures For Tunable Electronic And Photonic Applications, Suprem Ranjan Das

Open Access Dissertations

Das, Suprem R. Ph.D., Purdue University, December 2013. Nanoscale Semiconductor Materials and Devices employing Hybrid 1D and 2D structures for Tunable Electronic and Photonic Applications. Major Professor: Dr. David B. Janes.

Continued miniaturization of microelectronic devices over past decades has brought the device feature size towards the physical limit. Likewise, enormous `waste energy' in the form of self-heating in almost all of the electronic and optoelectronic devices needs an `energy-efficient low power' and `high performance' material as well as device with alternate geometry. III-V semiconductors are proven to be one of the alternate systems of materials for various applications including …