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Full-Text Articles in Physics
Graphene Used As A Lateral Force Microscopy Calibration Material In The Low-Load Non-Linear Regime, Mathias J. Boland, Jacob L. Hempel, Armin Ansary, Mohsen Nasseri, Douglas R. Strachan
Graphene Used As A Lateral Force Microscopy Calibration Material In The Low-Load Non-Linear Regime, Mathias J. Boland, Jacob L. Hempel, Armin Ansary, Mohsen Nasseri, Douglas R. Strachan
Physics and Astronomy Faculty Publications
A lateral force microscopy (LFM) calibration technique utilizing a random low-profile surface is proposed that is successfully employed in the low-load non-linear frictional regime using a single layer of graphene on a supporting oxide substrate. This calibration at low loads and on low friction surfaces like graphene has the benefit of helping to limit the wear of the LFM tip during the calibration procedure. Moreover, the low-profiles of the calibration surface characteristic of these layered 2D materials, on standard polished oxide substrates, result in a nearly constant frictional, adhesive, and elastic response as the tip slides over the surface, making …
Relaxation Of Charge In Monolayer Graphene: Fast Nonlinear Diffusion Versus Coulomb Effects, Eugene B. Kolomeisky, Joseph P. Straley
Relaxation Of Charge In Monolayer Graphene: Fast Nonlinear Diffusion Versus Coulomb Effects, Eugene B. Kolomeisky, Joseph P. Straley
Physics and Astronomy Faculty Publications
Pristine monolayer graphene exhibits very poor screening because the density of states vanishes at the Dirac point. As a result, charge relaxation is controlled by the effects of zero-point motion (rather than by the Coulomb interaction) over a wide range of parameters. Combined with the fact that graphene possesses finite intrinsic conductivity, this leads to a regime of relaxation described by a nonlinear diffusion equation with a diffusion coefficient that diverges at zero charge density. Some consequences of this fast diffusion are self-similar superdiffusive regimes of relaxation, the development of a charge depleted region at the interface between electron- and …
Interaction-Induced Dirac Fermions From Quadratic Band Touching In Bilayer Graphene, Sumiran Pujari, Thomas C. Lang, Ganpathy Murthy, Ribhu K. Kaul
Interaction-Induced Dirac Fermions From Quadratic Band Touching In Bilayer Graphene, Sumiran Pujari, Thomas C. Lang, Ganpathy Murthy, Ribhu K. Kaul
Physics and Astronomy Faculty Publications
We revisit the effect of local interactions on the quadratic band touching (QBT) of the Bernal honeycomb bilayer model using renormalization group (RG) arguments and quantum Monte Carlo (QMC) simulations. We present a RG argument which predicts, contrary to previous studies, that weak interactions do not flow to strong coupling even if the free dispersion has a QBT. Instead, they generate a linear term in the dispersion, which causes the interactions to flow back to weak coupling. Consistent with this RG scenario, in unbiased QMC simulations of the Hubbard model we find compelling evidence that antiferromagnetism turns on at a …
Emergence Of Helical Edge Conduction In Graphene At The Ν = 0 Quantum Hall State, Pavel Tikhonov, Efrat Shimshoni, H. A. Fertig, Ganpathy Murthy
Emergence Of Helical Edge Conduction In Graphene At The Ν = 0 Quantum Hall State, Pavel Tikhonov, Efrat Shimshoni, H. A. Fertig, Ganpathy Murthy
Physics and Astronomy Faculty Publications
The conductance of graphene subject to a strong, tilted magnetic field exhibits a dramatic change from insulating to conducting behavior with tilt angle, regarded as evidence for the transition from a canted antiferromagnetic (CAF) to a ferromagnetic (FM) ν = 0 quantum Hall state. We develop a theory for the electric transport in this system based on the spin-charge connection, whereby the evolution in the nature of collective spin excitations is reflected in the charge-carrying modes. To this end, we derive an effective field-theoretical description of the low-energy excitations, associated with quantum fluctuations of the spin-valley domain-wall ground-state configuration which …
Collective Bulk And Edge Modes Through The Quantum Phase Transition In Graphene At Ν = 0, Ganpathy Murthy, Efrat Shimshoni, H. A. Fertig
Collective Bulk And Edge Modes Through The Quantum Phase Transition In Graphene At Ν = 0, Ganpathy Murthy, Efrat Shimshoni, H. A. Fertig
Physics and Astronomy Faculty Publications
Undoped graphene in a strong, tilted magnetic field exhibits a radical change in conduction upon changing the tilt angle, which can be attributed to a quantum phase transition from a canted antiferromagnetic (CAF) to a ferromagnetic (FM) bulk state at filling factor ν = 0. This behavior signifies a change in the nature of the collective ground state and excitations across the transition. Using the time-dependent Hartree-Fock approximation, we study the collective neutral (particle-hole) excitations in the two phases, both in the bulk and on the edge of the system. The CAF has gapless neutral modes in the bulk, whereas …
Electrostatic Force Microscopy And Electrical Isolation Of Etched Few-Layer Graphene Nano-Domains, D. Patrick Hunley, Abhishek Sundararajan, Mathias J. Boland, Douglas R. Strachan
Electrostatic Force Microscopy And Electrical Isolation Of Etched Few-Layer Graphene Nano-Domains, D. Patrick Hunley, Abhishek Sundararajan, Mathias J. Boland, Douglas R. Strachan
Physics and Astronomy Faculty Publications
Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1×1012 Ω with a corresponding gap resistivity greater than about …
Collective Edge Modes Near The Onset Of A Graphene Quantum Spin Hall State, Gunpathy Murthy, Efrat Shimshoni, H. A. Fertig
Collective Edge Modes Near The Onset Of A Graphene Quantum Spin Hall State, Gunpathy Murthy, Efrat Shimshoni, H. A. Fertig
Physics and Astronomy Faculty Publications
Graphene subject to a strong, tilted magnetic field exhibits an insulator-metal transition tunable by tilt angle, attributed to the transition from a canted antiferromagnetic (CAF) to a ferromagnetic (FM) bulk state at filling factor ν=0. We develop a theoretical description for the spin and valley edge textures in the two phases, and the implied evolution in the nature of edge modes through the transition. In particular, we show that the CAF has gapless neutral modes in the bulk, but supports gapped charged edge modes. At the transition to the FM state the charged edge modes become gapless and are …