Materials Science and Engineering Commons^™

Controlled-Stress Large-Area Pulsed Laser Deposition Of Yttria Stabilized Zirconia, Paul C. Rounsavall

Theses and Dissertations

The US Air Force has need of parabolic-shaped membrane mirrors for surveillance satellites. The current polymer membrane technology has been unable to overcome shape deformation problems caused by intrinsic stresses from the membrane casting and mounting processes. One proposed solution was to coat the membrane mirrors with a stressed coating to compensate for shape deformations. Thus, the research presented in this dissertation produced controlled-stress large-area pulsed laser deposition (PLD) grown thin films on polymer substrates and investigated optical time-of-flight (TOF) sensor systems and Raman spectroscopy for control for the PLD process with respect to thin film stress. Initially, the PLD-grown …

Electrical Activation Studies Of Silicon Implanted Alx Gal-X N And Coimplanted Gan, Elizabeth A. Chitwood

Theses and Dissertations

A comprehensive study of the electrical activation of silicon implanted Al_xGa_1-xN was performed as a function ion dose, anneal temperature, and aluminum mole fraction, Also, GaN coimplanted with silicon and nitrogen was investigated. Room temperature Hall effect measurements were used to determine carrier concentration and mobility. All the samples had a 500 Å encapsulant of AlN, and were implanted at room temperature with 200 keV silicon ions at doses ranging from 1x10¹³ to 1x10¹⁵ /sq cm. The GaN was also implanted with nitrogen under the same conditions in doses of 9x10¹² to 9x10 …

Luminescence Studies Of Ion-Implanted Gallium Nitride And Aluminum Gallium Nitride, Erin N. Claunch

Theses and Dissertations

Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted Al_xGa_1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.

Pure Iron Electrolyzed From Scrap Iron Chips And Its Corrosion Characteristics, Wei-Min Cao, Ren-He Yin, Hui-Ceng Yan, Zhi-Qiang Ye

Journal of Electrochemistry

The high purity electrolytic iron was made from scrap iron chips. Electrolytic conditions of pure iron were determined in chloride baths and the highest purity was 99.983% by chemical analysis. Pure iron had very compact texture and high mechanical strength by SEM figures of cross section. In deaerated 0.5 kmol·m^-3 H₂SO₄ and 0.5 kmol·m^-3 NaCl solutions, the corrosion rate of iron decreased with increasing purity.

Thermal Assessment Of Silicon-Based Composite Materials Used In Photovoltaics, Pavlos K. Bataglannis

Theses

Photovoltaics are devices that convert sunlight directly to electricity. It is well established that the conversion efficiency of mono and poly-crystalline silicon-based photovoltaic modules is inversely related to their temperature. Substantial improvements in operational performance can thus be achieved if the thermal energy accumulating in the material can be effectively dissipated.

Accurate modelling of modules would allow possible methods of thermal dissipation to be evaluated, and as a crucial component of the model, the thermal properties of the constituent materials of PV modules needed to be known. Special consideration needed to be given to the interfaces between dissimilar materials and …

Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada

Electrical & Computer Engineering Theses & Dissertations

The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of …

Characterization Of The Optical And Electrical Properties Of Proton-Irradiated 4h-Silicon Carbide, Heather C. Crockett

Theses and Dissertations

Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. Semiconductor materials with a high tolerance to radiation fields have applications in several aerospace power and satellite systems. SiC is under investigation due to its potential for such space material applications. The optical properties of the material are investigated using temperature-dependent photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current-voltage measurements and constant-voltage deep level transient spectroscopy (CV-DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated …

Smart Structures For Control Of Optical Surfaces, D. Michael Sobers Jr.

Theses and Dissertations

The development of lightweight, large-aperture optics is of vital importance to the Department of Defense and the US Air Force for advancing remote sensing applications and improving current capabilities. Synthetic polymer optics offer weight and flexibility advantages over current generation glass mirrors, but require active control to maintain tight surface figure tolerances. This research explores the feasibility of using imbedded piezoelectric materials to control optical surfaces. Membrane-based and stiff piezo-controlled mirrors were constructed to develop and validate control techniques. Test results verified that surface control on the order of tens of wavelengths is possible using these systems.

Measurements Of Neutron Induced Surface And Bulk Defects In 4h Silicon Carbide, Kent T. Jones

Theses and Dissertations

Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. The optical properties of the material are investigated using temperature-dependant photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current-voltage measurements and constant-voltage deep level transient spectroscopy (CV-DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated material is investigated over the temperature range of 900-1500°C. Proton-induced irradiation damage is apparent in the 4H-SiC material, affecting both the optical and electrical characteristics of the devices. The radiative behavior …

Photoelectrochemistry Of La3+ Doped Semiconductor Porous Films Sensitized By Ru(Bpy)2(Ncs)2 Dye, Li Zhang, Yan-Jie Ren, Sheng-Min Cai

Journal of Electrochemistry

The La³⁺-doped TiO₂ nanoparticles were prepared with hydrothermal method.The photoelectrochemical properties of La³⁺-doped TiO₂ nanoporous-film electrode sensitized by Ru(bpy)₂(NCS)₂ were studied. The conversion efficiency of light to electricity and the energy conversion efficiencies were ineased with the depth of La³⁺-doped TiO₂ nanoporous-film electrode.

Stability And Optimization Of Photoconductivity In Thermally Vacuum Evaporated Indium (Iii) Sulfide Thin Films, Gustavo Rehder, Robert Engelken, Randy Stidham, Richard Tanner, Lee Ketchum, Anil Baral

Journal of the Arkansas Academy of Science

Long term stability of photosensitivity versus time in indium (III) sulfide thin films thermally vacuum evaporated onto photocell-patterned printed circuit boards varies sensitively with several factors including contact metal type, contact metal diffusion and electromigration into the semiconductor, doping, and encapsulation method. Because of the significant photoconductivity and relative low toxicity and environmental impact of this compound semiconductor, it is important to better characterize these dependences toward commercial applications. We will report on measurements of photoconductivity vs. time as functions of such factors and evolving methods to stabilize this photoconductivity.

Heat Transfer In A Thin Liquid Film In The Presence Of Electric Field For Non-Isothermal Interfacial Condition, Rama S.R. Gorla, Jorge E. Gatica, Bahman Ghorashi, Pijarn In-Eure, Larry W. Byrd

Chemical & Biomedical Engineering Faculty Publications

Heat transfer enhancement in an evaporating thin liquid film using the electric field under non-isothermal interfacial condition is presented. A new mathematical model subjected to van der Waals attractive forces, the capillary pressure and the electric field is developed to describe the heat transfer enhancement in the evaporating thin liquid film. The effect of an electrostatic field on the curvature of the thin film, evaporative flux, pressure gradient distribution, heat flux, and heat transfer coefficient in the thin film is presented. The results show that the electric field can enhance heat transfer in the thin liquid film significantly. In addition, …

Growth Dependant Properties Of Undoped And In-Situ Doped Chemically Deposited Cds Thin Films, Aaron John Reynolds

Theses : Honours

This research project examines the growth dependant properties and composition of Cadmium Sulfide thin films produced by the Chemical Bath Deposition Method. The specific areas investigated are the effect of deposition temperature, the effect of an Indium dopant on the films structure and properties, and the effects of post deposition processing such as annealing in air on the film composition. The chemical bath deposition apparatus used has been refined and tested to ensure that the films were grown in a more efficient manner than previously, with more control of the influencing deposition parameters such as temperature. Films grown by the …

Electrical Activation Studies Of Ion Implanted Gallium Nitride, James A. Fellows

Theses and Dissertations

A comprehensive and systematic electrical activation study of Si-implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x10¹³ to 5x10¹⁵ cm^-2 and annealed from 1050 to 1350 °C. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 °C, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were …

Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay

Theses and Dissertations

In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …

The Effect Of Preparation Condition On The Photoelectrochemical Performance Of Both The Pani Film And Tio2-Pani Composite Film On Au, Huai-Guo Huang, Hong-Ping Zhang, Zhi-Xin Zheng, Yan-Yan Xi, Ling-Ling Wu, Zhong-Hua Lin

Journal of Electrochemistry

Both the PANI (polyaniline) film and TiO₂-PANI composite film on the PATP(paminothiophenol)/Au substrate were obtained under different preparation condition by electrochemical methods, and their photoelectrochemical performances were alo studied. The resultsshowed that the photoelectrochemical performances of the films depend deeply on the comditionsof preparation. The self-assembling of PATP favors the adhesion of PANl. The partially-oxidizedPANI has a greater photoelectrochemical response than that of the reduced PANI and oxidized PANl. There is an optimum of film thickness for the photoelectrochemical performance of PANI film. Heat treating is in favor of the photoelectrochemical performance of TiO₂, but decreases …

Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew

Theses and Dissertations

The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation …

Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan

Theses and Dissertations

The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …

Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard

Theses and Dissertations

Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …

The Photoelectrochemistry Of Tio2-Polyaniline Composite Film, Huai-Guo Huang, Zhi-Xin Zheng, Jin Luo, Hong-Ping Zhang, Ling-Ling Wu, Zhong-Hua Lin

Journal of Electrochemistry

A TiO₂ and polyaniline (PANI) composite film was obtained by electrochemical methods. The SEM image of the composite film showed that the PANI film is almost completely covered with TiO₂ efficiency. The spectra of photocurrent for the TiO₂-PANI composite film were different from these of TiO₂ film photosensitized by PANI. The bandgap energy of TiO₂ film on partially oxidized PANI film was determined as 3.0 eV by the threshold energy of photocurrent band for TiO₂. The spectra of photocurrent for partially oxidized PANI film electrode suggested that it has the characteristics of …

Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem

Electrical & Computer Engineering Faculty Publications

Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In₂S₃ containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In₂S₃ thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In₂S_{3 …}

Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim

Student Works (2000-2009)

Hydrogenated amorphous silicon (a.Si:H) was prepared using the d.c plasma grow discharge system. Two sets of samples were prepared and studied. The first set of samples referred to as the high argon dilution films were prepared from the discharge of pure silane at flow-rate of 5sccm and silane at the same flow-rate diluted in argon at flow-rates of 5, 10 and 15sccm. Similarly, the second set of sample referred to as the low argon dilution films were prepared from the discharge of pure silane at flow-rate of20sccm and silane at the same flow-rate diluted in argon at the flow-rates mentioned …

A Study Of Monitoring Corrosion Of Metal Via An Optic Waveguide Sensing Method, Xue-Ming Li, Wei-Ming Chen, Shang-Lian Huang, Na Zhang, Zong-Qing Huang

Journal of Electrochemistry

An optical wave guide sensing method was proposed for monitoring corrosion of metal in outdoors steel structures. Replacing the cladding of wave-guide with metal film in a particular location, the method takes the metal film as the corrosion sensitive film. The experiment of waveguide sensor was carried out on a 721 colorimetric vessel, with which the soution is held in itself and the light is propagated in its sidewall. A Fe-C alloy film was electroplated onto the inner sied of vessel to form the corrosion sensitive film. The structure of the Fe-C alloy film was studied by XRD, EDX and …

Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott

Theses and Dissertations

Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 °C) ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 °C. Trap parameters of both damage-related and species-related defects …

Photoelectrochemical Studies On The Tio2 Nanostructured Porous Film Sensitized By Cyanine Dye, Li Zhang, Mai-Zhi Yang, Xue-Bin Qiao, Yan-Zhong Hao, En-Qing Gao, Sheng-Min Cai

Journal of Electrochemistry

The photoelectrochemical behaviors of the TiO₂ nanostructured porous film sensitized by cyanine dye were investigated in this paper. The results showed that the excitaed state level matched the conduction band edge of TiO₂ nanoparticle. Therefore the sensitization of the dye can increase the photocurrent intensity of the TiO₂ nanostructured electrode obviously and results in a red-shift of optical absorption from the ultra-violet region to the visible. As a result, the light-to-electricity conversion efficiency was improved evidently, the maximum value of IPCE has reached 12.1%.

Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan

Electrical & Computer Engineering Theses & Dissertations

GaAs is currently the semiconductor material of choice for high speed, low power applications. Its electronic transport properties are superior to almost all other semiconductors. It is also used in a variety of bipolar applications such as photodetectors and photo-mixers. However, as is well known, the hole mobility and related transport parameters of GaAs are not very good. This is a serious drawback, and poses a potential problem for all applications involving bipolar conductivity. In order to increase the high :frequency limits and high-speed capability of bipolar devices, the choice of an alternative material, therefore, becomes necessary. An important first …

Low-Temperature Molecular Beam Epitaxy Of Gaas: A Theoretical Investigation Of Antisite Incorporation And Reflection High-Energy Diffraction Oscillations, K. Natarajan, Rama Venkat, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Surface dynamics dominate the incorporation of charged, As+Ga, and neutral, As0Ga, antisite arsenic, and the temporal variation of reflection high-energy electron diffraction(RHEED) intensity in the low-temperature molecular beam epitaxy of (100) gallium arsenide(GaAs). A rate equation model is proposed which includes the presence and dynamics of a physisorbed arsenic (PA) layer riding the growth surface. The PA layer dictates the incorporation and concentration of As+Ga and As0Ga. Additionally, it influences the RHEED oscillations (ROs) behavior and the RO’s dependence on its coverage through its contribution to the reflected intensity. The model results for the dependence of As+Ga and As0Ga concentrations …

Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott

AFIT Patents

An improved intracavity sensor based output power control for microcavity light emitting devices. An improved phototransistor transducer is both configured and physically disposed so that it passively transmits the spurious optical energy output of the microcavity light emitting device while simultaneously generating a light determined electrical signal of easily used large magnitude that is nearly free of error. The base-collector region of the transistor is disposed with a quantum well absorbing layer and produces a signal responsive to a selected emission wavelength. The configuration of the optical energy communicating transducer is arranged so that it is improved in sensitivity and …

Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath

Theses and Dissertations

Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B …

Photoelectrochemical Studies On Nanoporous Tio2/Pan Film Electrode, Min-Sheng Liu, Yan-Zhong Hao, Xue-Bin Qiao, Mai-Zhi Yang, Sheng-Min Cai

Journal of Electrochemistry

The photon to electricity conversion process of nanoporous TiO₂/PAn film electrode was studied in electrolytes with and without redox couple by using the photocurrent action spectra and potential dependence of photocurrent. It is concluded that the nanoporous TiO₂/PAn film electrode has a structure of duplex n type semiconductor layers. The band gap of PAn film is 2.88eV.The TiO₂ nanoporous film electrode modified by PAn can extend the range of optical absorption into visible and infrared region and effectively increase the photocurrent in the visible and infrared region. The photocurrent threshold shifts to>600nm and conversion …