Materials Science and Engineering Commons^™

Using Electrodeposition To Fabricate Mould For Polymer Microfluidic Chip, Yi Luo, De-Nan Chu, Zhi-Feng Lou, Chong Liu, Li-Ding Wang

Journal of Electrochemistry

Many researches have been focused on polymer microfluidic chip in recent years and the mould plays an important role in its fabrication process. Using electrodepositingmethod to fabricate a metal mould for polymer microfluidic chip has been presented in this paper. An ultra-thick photoresist SU-8 was coated on a pretreated metal plate, after photolithography, nickel was electrodeposited in the patterned SU-8, then was removed the SU-8 to obtain a final metal mould. This methodreduces workload of electrodeposit largely. Applying counter current before deposit, adding additive to solution and vacuum anneal after demould have been used to improve the binding force between …

Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli

Theses and Dissertations

Micro-Raman (µ-Raman) spectroscopy is used to measure residual stress in two silicon carbide (SiC) poly-types: single-crystal, hexagonally symmetric 6H-SiC, and polycrystalline, cubic 3C-SiC thin films deposited on Si substrates. Both are used in micro-electrical-mechanical systems (MEMS) devices. By employing an incorporated piezoelectric stage with submicron positioning capabilities along with the Raman spectral acquisition, spatial scans are performed to reveal areas in the 6H-SiC MEMS structures that contain residual stress. Shifts in the transverse optical (TO) Stokes peaks of up to 2 cm^-1 are correlated to the material strain induced by the MEMS fabrication process through the development of phonon …

Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. J. Long, O. O. Famodu, M. Murakami, Jason R. Hattrick-Simpers, G. W. Rubloff, M. Stukowski, K. Rajan

Faculty Publications

We discuss techniques for managing and visualizing x-ray diffraction spectrum data for thin film composition spreads which map large fractions of ternary compositional phase diagrams. An in-house x-ray microdiffractometer is used to obtain spectra from over 500 different compositions on an individual spread. The MATLAB software is used to quickly organize the data and create various plots from which one can quickly grasp different information regarding structural and phase changes across the composition spreads. Such exercises are valuable in rapidly assessing the “overall” picture of the structural evolution across phase diagrams before focusing in on specific composition regions for detailed …

Tunable Multiferroic Properties In Nanocomposite Pbtio3-Cofe2O4 Epitaxial Thin Films, M. Murakami, K.-S. Chang, M. A. Aronova, C.-L. Lin, Ming H. Yu, Jason R. Hattrick-Simpers, M. Wuttig, I. Takeuchi, C. Gao, B. Hu, S. E. Lofland, L. A. Knauss, L. A. Bendersky

Faculty Publications

We report on the synthesis of PbTiO₃–CoFe₂O₄ multiferroic nanocomposites and continuous tuning of their ferroelectric and magnetic properties as a function of the average composition on thin-film composition spreads. The highest dielectric constant and nonlinear dielectric signal was observed at (PbTiO₃)₈₅–(CoFe₂O₄)₁₅, where robust magnetism was also observed. Transmission electron microscopy revealed a pancake-shaped epitaxial nanostructure of PbTiO₃ on the order of 30 nm embedded in the matrix of CoFe₂O₄ at this composition. Composition dependent ferroics properties observed here indicate that there …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]

Preparation, Characterization And Photoelectrochemical Activities Of Cu-Tio2/Ito Films, Dong Shu, Chun He, Han-Xia Zhang, Ya Xiong

Journal of Electrochemistry

Cu-TiO₂/ITO films were prepared by direct photo-reduction deposition of Cu²⁺ on TiO₂/ITO films. The nanocomposite films were characterized by UV-vis diffuse reflectance spectra (DRS), XRD spectra, Scanning Electron Microscope (SEM) technology, and photovoltage measurement. The feasibility of improving the photocatalytic activity of TiO₂ film by combining the modification of Cu nanoparticles with the application of anodic bias was investigated. The experimental results showed that the deposited Cu has an apparent enhancement effect with respect to suppressing the recombination between the photogenerated charge carriers and enhancing the photocatalytic oxidation of formic acid. The combination could …

Studies Of Infrared Optical Properties Of Palladium Nanoparticles With Different Sizes And Dispersed States, Yan-Xia Jiang, Hong-Gang Liao, Wei Chen, Shi-Gang Sun

Journal of Electrochemistry

Pd nanoparticles with different sizes and dispersed states were prepared. Their infrared optical properties were studied with CO molecule probe. The infrared spectroscopic investigation revealed that Pd_n of 6.6 nm and Pd_n(cube)of 100～150nmexhibit normal IR absorption. The center of IR bands are around 1970 cm^-1 and 1910cm^-1. Pd_nis introduced into the surface of electrode, and is induced by interface electric fieldto form the aggregation of nanoparticles Pd_n(ag). The Pd_n(ag) has a different IR optical property from Pd_n. The direction of IR absorption band of Pd_{n …}

Preparation And Optical Properties Of Highly Ordered Cds Nanowire Arrays, Lan Sun, Chang-Jian Lin

Journal of Electrochemistry

Highly ordered CdS nanowire arrays have been prepared by using dc electrodeposition in the porous anodic aluminum oxide template. Scanning electro microscopy (SEM) and transmission electron microscopy (TEM) reveal that the nanowires are uniform and highly ordered. The measurements of X-ray diffraction and high-resolved electron microscopy (HRTEM) show that the nanowires are hexagonal structure with the crystallographic c-axis preferentially oriented along the length of the pore. The UV-Vis absorption spectra of CdS nanowire arrays show that the absorption edges of the nanowire arrays shift towards short wavelength with the decrease of the nanowire size. The photoluminescence measurements show that the …

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …

Controlled-Stress Large-Area Pulsed Laser Deposition Of Yttria Stabilized Zirconia, Paul C. Rounsavall

Theses and Dissertations

The US Air Force has need of parabolic-shaped membrane mirrors for surveillance satellites. The current polymer membrane technology has been unable to overcome shape deformation problems caused by intrinsic stresses from the membrane casting and mounting processes. One proposed solution was to coat the membrane mirrors with a stressed coating to compensate for shape deformations. Thus, the research presented in this dissertation produced controlled-stress large-area pulsed laser deposition (PLD) grown thin films on polymer substrates and investigated optical time-of-flight (TOF) sensor systems and Raman spectroscopy for control for the PLD process with respect to thin film stress. Initially, the PLD-grown …

Electrical Activation Studies Of Silicon Implanted Alx Gal-X N And Coimplanted Gan, Elizabeth A. Chitwood

Theses and Dissertations

A comprehensive study of the electrical activation of silicon implanted Al_xGa_1-xN was performed as a function ion dose, anneal temperature, and aluminum mole fraction, Also, GaN coimplanted with silicon and nitrogen was investigated. Room temperature Hall effect measurements were used to determine carrier concentration and mobility. All the samples had a 500 Å encapsulant of AlN, and were implanted at room temperature with 200 keV silicon ions at doses ranging from 1x10¹³ to 1x10¹⁵ /cm². The GaN was also implanted with nitrogen under the same conditions in doses of 9x10¹² to …

Luminescence Studies Of Ion-Implanted Gallium Nitride And Aluminum Gallium Nitride, Erin N. Claunch

Theses and Dissertations

Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted Al_xGa_1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.

Pure Iron Electrolyzed From Scrap Iron Chips And Its Corrosion Characteristics, Wei-Min Cao, Ren-He Yin, Hui-Ceng Yan, Zhi-Qiang Ye

Journal of Electrochemistry

The high purity electrolytic iron was made from scrap iron chips. Electrolytic conditions of pure iron were determined in chloride baths and the highest purity was 99.983% by chemical analysis. Pure iron had very compact texture and high mechanical strength by SEM figures of cross section. In deaerated 0.5 kmol·m^-3 H₂SO₄ and 0.5 kmol·m^-3 NaCl solutions, the corrosion rate of iron decreased with increasing purity.

Thermal Assessment Of Silicon-Based Composite Materials Used In Photovoltaics, Pavlos K. Bataglannis

Theses

Photovoltaics are devices that convert sunlight directly to electricity. It is well established that the conversion efficiency of mono and poly-crystalline silicon-based photovoltaic modules is inversely related to their temperature. Substantial improvements in operational performance can thus be achieved if the thermal energy accumulating in the material can be effectively dissipated.

Accurate modelling of modules would allow possible methods of thermal dissipation to be evaluated, and as a crucial component of the model, the thermal properties of the constituent materials of PV modules needed to be known. Special consideration needed to be given to the interfaces between dissimilar materials and …

Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada

Electrical & Computer Engineering Theses & Dissertations

The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of …

Smart Structures For Control Of Optical Surfaces, D. Michael Sobers Jr.

Theses and Dissertations

The development of lightweight, large-aperture optics is of vital importance to the Department of Defense and the US Air Force for advancing remote sensing applications and improving current capabilities. Synthetic polymer optics offer weight and flexibility advantages over current generation glass mirrors, but require active control to maintain tight surface figure tolerances. This research explores the feasibility of using imbedded piezoelectric materials to control optical surfaces. Membrane-based and stiff piezo-controlled mirrors were constructed to develop and validate control techniques. Test results verified that surface control on the order of tens of wavelengths is possible using these systems.

Characterization Of The Optical And Electrical Properties Of Proton-Irradiated 4h-Silicon Carbide, Heather C. Crockett

Theses and Dissertations

Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. Semiconductor materials with a high tolerance to radiation fields have applications in several aerospace power and satellite systems. SiC is under investigation due to its potential for such space material applications. The optical properties of the material are investigated using temperature-dependent photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current-voltage measurements and constant-voltage deep level transient spectroscopy (CV-DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated …

Measurements Of Neutron Induced Surface And Bulk Defects In 4h Silicon Carbide, Kent T. Jones

Theses and Dissertations

Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. The optical properties of the material are investigated using temperature-dependant photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current-voltage measurements and constant-voltage deep level transient spectroscopy (CV-DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated material is investigated over the temperature range of 900-1500°C. Proton-induced irradiation damage is apparent in the 4H-SiC material, affecting both the optical and electrical characteristics of the devices. The radiative behavior …

Photoelectrochemistry Of La3+ Doped Semiconductor Porous Films Sensitized By Ru(Bpy)2(Ncs)2 Dye, Li Zhang, Yan-Jie Ren, Sheng-Min Cai

Journal of Electrochemistry

The La³⁺-doped TiO₂ nanoparticles were prepared with hydrothermal method.The photoelectrochemical properties of La³⁺-doped TiO₂ nanoporous-film electrode sensitized by Ru(bpy)₂(NCS)₂ were studied. The conversion efficiency of light to electricity and the energy conversion efficiencies were ineased with the depth of La³⁺-doped TiO₂ nanoporous-film electrode.

Stability And Optimization Of Photoconductivity In Thermally Vacuum Evaporated Indium (Iii) Sulfide Thin Films, Gustavo Rehder, Robert Engelken, Randy Stidham, Richard Tanner, Lee Ketchum, Anil Baral

Journal of the Arkansas Academy of Science

Long term stability of photosensitivity versus time in indium (III) sulfide thin films thermally vacuum evaporated onto photocell-patterned printed circuit boards varies sensitively with several factors including contact metal type, contact metal diffusion and electromigration into the semiconductor, doping, and encapsulation method. Because of the significant photoconductivity and relative low toxicity and environmental impact of this compound semiconductor, it is important to better characterize these dependences toward commercial applications. We will report on measurements of photoconductivity vs. time as functions of such factors and evolving methods to stabilize this photoconductivity.

Heat Transfer In A Thin Liquid Film In The Presence Of Electric Field For Non-Isothermal Interfacial Condition, Rama S.R. Gorla, Jorge E. Gatica, Bahman Ghorashi, Pijarn In-Eure, Larry W. Byrd

Chemical & Biomedical Engineering Faculty Publications

Heat transfer enhancement in an evaporating thin liquid film using the electric field under non-isothermal interfacial condition is presented. A new mathematical model subjected to van der Waals attractive forces, the capillary pressure and the electric field is developed to describe the heat transfer enhancement in the evaporating thin liquid film. The effect of an electrostatic field on the curvature of the thin film, evaporative flux, pressure gradient distribution, heat flux, and heat transfer coefficient in the thin film is presented. The results show that the electric field can enhance heat transfer in the thin liquid film significantly. In addition, …

Oxidation-Induced Stacking Fault In (100) And (111) Silicon Wafers, Mei Keat Liang

Student Works (2000-2009)

Oxidation-induced stacking fault (OISF) dimension and density change on (100) and (111) wafers, as a result of repeated preferential etching were studied using AFM. optical microscope and angular polishing techniques. Density on (100) and (111) wafers is independent of surface removal up to 3.0µm. This indicates the single layer nature of OISF formed from the sand blasted wafer. Besides having higher density, OISFs from (100) wafer were longer than OISF from (111) wafer. OISF width increases linearly with surface removal however the length does not change significantly with surface removal. ln the OISF normal depth studies using angular polishing technique, …

Growth Dependant Properties Of Undoped And In-Situ Doped Chemically Deposited Cds Thin Films, Aaron John Reynolds

Theses : Honours

This research project examines the growth dependant properties and composition of Cadmium Sulfide thin films produced by the Chemical Bath Deposition Method. The specific areas investigated are the effect of deposition temperature, the effect of an Indium dopant on the films structure and properties, and the effects of post deposition processing such as annealing in air on the film composition. The chemical bath deposition apparatus used has been refined and tested to ensure that the films were grown in a more efficient manner than previously, with more control of the influencing deposition parameters such as temperature. Films grown by the …

Electrical Activation Studies Of Ion Implanted Gallium Nitride, James A. Fellows

Theses and Dissertations

A comprehensive and systematic electrical activation study of Si-implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x10¹³ to 5x10¹⁵ cm^-2 and annealed from 1050 to 1350 °C. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 °C, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were …

Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay

Theses and Dissertations

In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …

The Effect Of Preparation Condition On The Photoelectrochemical Performance Of Both The Pani Film And Tio2-Pani Composite Film On Au, Huai-Guo Huang, Hong-Ping Zhang, Zhi-Xin Zheng, Yan-Yan Xi, Ling-Ling Wu, Zhong-Hua Lin

Journal of Electrochemistry

Both the PANI (polyaniline) film and TiO₂-PANI composite film on the PATP(paminothiophenol)/Au substrate were obtained under different preparation condition by electrochemical methods, and their photoelectrochemical performances were alo studied. The resultsshowed that the photoelectrochemical performances of the films depend deeply on the comditionsof preparation. The self-assembling of PATP favors the adhesion of PANl. The partially-oxidizedPANI has a greater photoelectrochemical response than that of the reduced PANI and oxidized PANl. There is an optimum of film thickness for the photoelectrochemical performance of PANI film. Heat treating is in favor of the photoelectrochemical performance of TiO₂, but decreases …

Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew

Theses and Dissertations

The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation …

Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard

Theses and Dissertations

Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …

Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan

Theses and Dissertations

The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …

The Photoelectrochemistry Of Tio2-Polyaniline Composite Film, Huai-Guo Huang, Zhi-Xin Zheng, Jin Luo, Hong-Ping Zhang, Ling-Ling Wu, Zhong-Hua Lin

Journal of Electrochemistry

A TiO₂ and polyaniline (PANI) composite film was obtained by electrochemical methods. The SEM image of the composite film showed that the PANI film is almost completely covered with TiO₂ efficiency. The spectra of photocurrent for the TiO₂-PANI composite film were different from these of TiO₂ film photosensitized by PANI. The bandgap energy of TiO₂ film on partially oxidized PANI film was determined as 3.0 eV by the threshold energy of photocurrent band for TiO₂. The spectra of photocurrent for partially oxidized PANI film electrode suggested that it has the characteristics of …