Materials Science and Engineering Commons^™

The Investigations Of Surface Treatment Methods And Characterization Of Oxide Films On Ab5 Based Metal Hydride Electrodes Ⅰ. New NiRich Treatment Methods And Photoelectrochemical Characterization Of Oxide Films, Junmin Nan, Yong Yang, Jun Li, Zugeng Lin

Journal of Electrochemistry

Two simple and efficient surface treatment methods for AB₅ type hydrogen storage alloys were developed. The results of X-ray photoelectron spectroscopy (XPS) and cyclic voltammetric (CV) experiments showed that the hydrogen storage alloys treated by two different methods had Ni rich surface layer so that the performances of the electrodes were improved after treatment. The characterization of the oxide films which formed on the surface of electrodes through potentiodynamic oxidation with the help of photoelectrochemical microscopy (PEM) were done. The anodic photocurrent and the cathodic photocurrent related to the oxidation of hydrogen and the reduction of oxygen on the …

White Light Interferometric Surface Profiler, Vincent Toal, Brian Bowe

Articles

We describe an optical system for 3-D profilometry based on the white light interferometer. We detail a simple way to construct a profiler that uses two simple algorithms which deal efficiently and quickly with the data. The system has a theoretically unlimited range and can deal with rough and smooth surfaces

Measurement Of Ultrafast Carrier Recombination Dynamics In Mid-Infrared Semiconductor Laser Material, William T. Cooley

Theses and Dissertations

Shockley-Read-Hall, radiative, and Auger recombination rates in mid-infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3.3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were measured and found to be A_SRH ≈ 10 x 10⁷sec^-1, B_rad ≈ 2 x 10^-10 cm³sec^-1 and C_Auger < 10^-29 cm^{6 …}

Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang

Journal of Electrochemistry

PS layer on n⁺-Si with (111) orientation prepered by means of photoelectrochemically etched has photo-luminescent (PL) ability like PS layer on usual n-Si. The data of PL spectra and quenching are given.

Experimental Investigation Of Nonlinear Dynamics In Single Mode Semiconductor Laser Diodes With Phase Conjugate Feedback, Gordon T. Hengst

Theses and Dissertations

The semiconductor laser diode offers a unique system to investigate nonlinear dynamics when optical feedback is applied. Although there is extensive research of laser diodes with optical feedback from normal dielectric mirrors, very little has been done experimentally to analyze the effects of degenerate phase conjugate feedback from a BaTiO₃ crystal. This research experimentally investigated the dynamics of a single-mode laser diode with weak phase conjugate feedback using both the self-pumped and double phase conjugate geometries. The experimental results validated a mathematical model which numerically evaluates the Lang-Kobayahsi coupled differential equations. The model simulated the nonlinear behavior of a …

Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat

Electrical & Computer Engineering Faculty Research

A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.

Electroluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang

Journal of Electrochemistry

Porous silicon with micrometer size pores, which is made on n⁺-Si by photoelectrochemically etched, has electroluminescent property. Each monochromic intensity and wavelength range of luminescent spectra depend on polarized potential. The intersity and the stability of cathodic electroluminescence is high than those of anodic one. Voltammetric behavior before quenching indicated that the electrochemical reactions of some surface species are involved in except the reduction of S₂O₈^2-, which leads to radiative recombination. The energy band diagram based on n⁺-Si(E_g=1.1 eV)/PS(E_g=1.8 eV) junction is proposed.

Thin Film Deposition Of Silicon For Solar Cell Applications, Sailesh Kumar, Roger M. Hawk

Journal of the Arkansas Academy of Science

Thin films of silicon have been formed using a patented electrostatic deposition method which utilizes charged particle motion in an electric field. After deposition, the films are heat treated for varying times and temperatures in a programmable furnace maintained under a purified argon atmosphere. X-ray diffraction (XRD) confirmed that these films were polycrystalline in nature. These films were found to have grain sizes of about 50 microns. Solar cells were fabricated using these large grained polycrystalline silicon films by sputtering pure gold as both front and back contacts. The cells have shown efficiencies of 1.8%. This paper reports on the …

Preparation Of Powder Precursors And Evaporation Of Photoconductive Indium Sulfide Films, Chris Barber, Robert Engelken, Brandon Kemp, Wasim Aleem, Imran Khan, Chris Edrington, Michael Buck, Clayton Workman, Anup Thapa, Tom Jakobs

Journal of the Arkansas Academy of Science

We have demonstrated significant photoconductance in indium sulfide thin films prepared by thermal vacuum evaporation ofIn2$3 powders synthesized in-house by chemical precipitation ofInCl3 or In(CH3COO)3, and (NH4)2S or Na2S. The Delta G lambda/Gdark values have been as high as 0.1 in the initial unoptimized films. Excess sulfur (via a mixture of polysulfide and sulfide ions in the synthesis bath) appears to be important in achieving reproducible and large photoconductivities. In2S3 is particularly attractive as a lower toxicity alternative to CdS in optoelectronic applications such as photovoltaic and photoconductive cells.

Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan

Electrical & Computer Engineering Faculty Publications

Optical and electrical properties of CuAlSe₂ thin films obtained by selenization of Cu/Al/Cu...Al/Cu layers sequentially deposited have been investigated. It is shown that the expected energy gap (2.67 eV) is measured for well crystallized films, whereas a slightly higher value is measured for films not so well crystallized. Raman diffusion also shows differences between well and poorly crystallized films with peaks corresponding to the reference powder for the former samples. A p-type conductivity is found whatever the crystalline quality of the samples. The conductivity of the films depends also strongly on their crystalline properties. When the films are badly …

Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali

Electrical & Computer Engineering Faculty Publications

CuAlSe₂ thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe₂ films are obtained with some Cu₂-_δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe₂ films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …

Investigation Of The Optical Properties Of Ordered Semiconductor Materials, Jack E. Mccrae Jr.

Theses and Dissertations

Optical studies have been conducted upon CdGeAs₂ and ZnGeP₂, two of the most promising semiconductors being developed for mid-infrared non-linear optics applications. These experiments included photoluminescence (PL) studies of both compounds as well as photoreflectance (PR) measurements upon CdGeAs₂. In addition, Hall effect measurements were carried out upon CdGeAs₂, to aid in interpretation of the optical data. PL was measured as a function of laser power, sample temperature, and crystal orientation for CdGeAs₂. One broad weak peak near 0.38 eV, and another somewhat narrower and often far brighter peak near 0.57 …

A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures …

Optical Detection Properties Of Silicon-Germanium Quantum Well Structures, Michael R. Gregg

Theses and Dissertations

A study has been carried out on Si/SiGe multi quantum well structures to determine their applicability as normal incidence infrared detectors in the spectral range of 2-12 micrometers. The research effort was primarily experimental; however, extensive calculations were performed to initially explain the experimental data and then used to design subsequent structures. Multiple quantum well structures grown on both Si[001] and Si[110] substrates via molecular beam epitaxy were studied by photoluminescence, absorption, and photoresponse measurements over a wide parameter space. Variables included quantum well depth and width, well doping, number of wells and growth temperature. Well widths were varied from …

Design Of Gradient Index Optical Thin Films, Jeffrey J. Druessel

Theses and Dissertations

Gradient index thin films provide greater flexibility for the design of optical coatings than the more conventional 'layer' films. In addition, gradient index films have higher damage thresholds and better adhesion properties. This dissertation presents an enhancement to the existing inverse Fourier transform gradient index design method, and develops a new optimal design method for gradient index films using a generalized Fourier series approach. The inverse Fourier transform method is modified to include use of the phase of the index profile as a variable in rugate filter design. Use of an optimal phase function in Fourier-based filter designs reduces the …

The Reduction Of Oxygen To Hydrogen Peroxide In An Acidic Trickle Bed Cell Using Graphite Chip Cathode, Zhaoe Lu, Guanyong Zhang, Tiangeng Zhong, Guonu Fang

Journal of Electrochemistry

The authors investigated the electrochemical reduction of oxygen to hydrogen peroxide in 0.05 mol/L H₂SO₄ solution by the trickle bed electrode using graphite chip. The bed dimension was 14×5×0.6 cm. The current efficiency and the concentration of H₂O₂ in the catholyte were determined at various current strengths and various rates of adding the electrolyte. The proper current was 0.15 A. i.e. the current density was 2.1 mA/cm² vertical cross section area of the bed. The concentration of H₂O₂ reached 7×10^-3 mol/L with the current efficiency of 0.2. If the …

An Investigation On The Processing And Characterization Of (Thallium(0.5-X) Lead(0.5-X) Europium(2x)) Strontium(2-Y) Barium(Y) Calcium(2) Copper(3) Oxygen(Z) High-Temperature Superconductor To Determine The Optimum Barium Concentration And Study The Effects Of Doping Europium In Thallium And Lead Sites, Zifan Ju

Dissertations and Theses @ UNI

This research focused on (Tl_0.5-xPb_0.5-xEu_2x)Sr_2-y Ba_yCa₂Cu₃O_z compound to determine the optimum y (Barium concentration), and then studied the effects of doping Eu in Tl, Pb sites. Studies on optimum y give rise to a high quality superconducting material as a target material for sputter deposition of thin films for electronics applications. Studies on doping Europium (Eu) is a new investigation and might lead to better understanding of the structural properties of the superconductor.

The experiment was conducted in three steps as follows:

1. Optimizing the sample fabrication …

Electrical Characterization Of 4h-And 6h-Silicon Carbide Schottky Diodes, Jeffrey C. Wiemeri

Theses and Dissertations

The electrical properties of silicon carbide (SiC) make it an excellent candidate for use in high temperature/high power devices due to its wide bandgap, high breakdown field, high electron mobility, etc. In this work two Schottky diodes of platinum (Pt) on n-type carbon faced 4H-SiC and three Schottky diodes of nickel (Ni) on n-type silicon faced 6H-SiC were electrically characterized. The diodes exhibited good performance up to 698 K for both the forward and reverse (up to -100v) bias voltages. The barrier heights measured by I-V-T tests were found to be 0.32 and 0.61 eV for the Pt/4H-SiC samples, but …

Electrical Characterization Of 4h-Silicon Carbide P-N Junction Diodes, Michael E. Dunn

Theses and Dissertations

The current conduction mechanisms of 4H-SiC p+n mesa diodes were studied using current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T), deep level transient spectroscopy (DLTS), optical observations, and reverse breakdown measurements. Temperature and voltage dependencies of diffusion, recombination, and tunneling current processes are shown to be consistent with Sah-Noyce-Shockley theory. Recombination currents having an ideality factor of A=1.85-2.1 yielded an activation energy of E_A=1.56 eV, whereas for ideal recombination, A=2 and E_A=1.6 eV. Forward I-V curves of poor diodes dominated by tunneling and recombination processes, showing low reverse breakdown voltages of approx. 100 V, can be correlated to DLTS results …

Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter

Theses and Dissertations

Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and Al_xGa_1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH₄) flow, growth time, and …

A Photoelectrochemical Investigation Of A.C.Modulated Passive Films On 304 Stainless Steel In Weak-Alkaline And Neutral Solution, Tianbao Du, Chunan Cao, Jiakang Yu, Haichao Lin

Journal of Electrochemistry

A photoelectrochemical investigation has been carried out on AISI 304 stainless steeI AV modulated passive film in 0.1mol/L Na₂B₄O₇ and 0.5 mol/L Na₂SO₄ solution. Photo current curve depends on the potential, passive condition and testing solutions. The results of the measurements indicate that the photoresponse is determined by the defects in the electronic structure of the films whenthe defects lead to localized states in the bandgap region. It is concluded that the passive film on AISI 304 stainless steel is in a highly disordered amorphous state.

Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak

Theses and Dissertations

The material parameters and crystalline quality of undoped, MBE-grown InAs_1-xSb_x nearly lattice-matched to (100) GaSb (-0.617% ≤ Δ a-a ≤ +0.708%) similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also studied by temperature- and excitation-dependent photoluminescence (PL), which, for the majority of cases, showed only a single band-edge peak, …

The Photoelectrochemical Studies Of Passive Films On Rebar Electrodes In Simulated Cement Pore Solution, Wei Chu, Yuanxiang Shi, Baoming Wei, Yong Yang, Xuguang Chen, Zugeng Lin

Journal of Electrochemistry

The electronic properties of the passive film on REBAR electrodes in simulatedcement pore solution (pH=9.0～13.8) have been investigated using in-situ photoelectrochemical methods. The results show that the passive film is composed of mixed oxides of ferrum, and it is an amorphous, n-type semiconductive film. Variations of pH values, ions in the solution and film-formation potentials can affect the composition of the films. There are two main stages in the growthof the film, with two rate functions characterized by linear relation between the film thickness and thelogarithm of time. The addition of inhibitor NaNO₂ changes the composition, structure and growth …

Photoelectrochemical And Spectroelectrochemical Studies Oniron Oxide Ultrafine Particles, Maizhi Yang, Yongjun Ji, Wen Zhang, Shengmin Cai, Xiaojiang Lu, Zhongqun Tian, Jin Luo

Journal of Electrochemistry

In this paper, Raman spectra, photocurrent and the UV-VIS reflectance aremeasured for studying the α-Fe₂O₃ ultrafine particles adsorbed on Pt electrode. The blue shifts of Raman peaks demonstrate the size quantization effect for the particles of 50 nm in diameter ascompared with the bulk material. With the changing of the potential, the photocurrent decrcases as the UV-VIS reflectance increases, and vice-versa. Therefore, the potential not only affects the hargetransfer direcdtion in the interface of electrode/redox couple, but also influences the light absortion onthe surface of particles. According to the results of photoelectrochemistry, we suggest that the cathodic …

Laser Scanning In-Situ Photoelectrochemical Microscopictechnique And Its Applications, Zugeng Lin, Jinkua You, Xiangdong Zhuo, Chun Zhang, Yong Yang

Journal of Electrochemistry

The main factors of the laser scanning in-situ photoelectrochemical microscopic measurement system which is set up in our lab have been discusaed in this paper. Some applications of this technique for in-situ study of modification and processing of semiconductor electrodes, monitoring of electro deposition process of semiconducting material and redox reaction occurring at metal oxide electrodes have also been presented. The results have shown that the technique is very powerful that for studing local photoelectrochemical properties of semiconductors and metal oxide electrodes. These provide important information on the micro structural and electronic properties in the solid/electrolyte interface.

A Photoelectrochemical Investigation Of Zirconium Oxide Film, Maizhi Yang, Ping Wei, Di Quarto F., Piazza S., Sunseri C.

Journal of Electrochemistry

A photoelectrochemical investigation has been carried out on zirconium initialoxide film and its oxide film grownanodically at constant rate up to different thickness. Both anodicand cathedic photocurrents on the photocurrent spectrum depended on the potential, but had littlerelation with the forming anedic films or measuring solutions. Photocurrent spectrum and photocurrenttransients suggested that the oxide films on zirconium were duplex layers structure. The internal layerwas ZrO₂ and the external layer ZrO₂·(H₂O)_n. The photocurrent included photogenerated carrier ininternal and external oxide films, as well as internal photoinjection process for electrons from thesubstrate metal into the …

Molten Salt Electrolytes For Electrodeposition Of Cdte Films, Arif Raza, Robert Engelken, Brandon Kemp, Arees Siddiqui, Omer Mustafa

Journal of the Arkansas Academy of Science

We report preliminary investigation of several molten salt electrolytes containing CdCl2 and TeCl4 for the electrodeposition of CdTe films at temperatures well above (>250 °C) those used with aqueous and organic electrolytes. These high temperatures have potential todramatically increase the crystallite size (Poole, Engelken, et al., 1994), as is important for optoelectronic device applications of CdTe, a leading II-VIsemiconductor. This paper willsurvey the results obtained withelectrolytes such as B2O,/HBO2 (m.p. - 230'C), NaCH3COO (m.p. » 324°C), ZnCl2 (m.p. - 283*C), and LiCl/KCl (m.p. * 350 °C), with an emphasis on the latter two. Key material to be presented includes …

Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa

Journal of the Arkansas Academy of Science

Due to the extreme sensitivity of the partial elemental currents (i.e.,iCd, iTe) and, hence, stoichiometry to deposition voltage, temperature, mass transport, and ambient light intensity during electrodeposition of semiconductor films, it is important to implement in-situ methods for monitoring the stoichiometry and related semiconductor efficacy of the growing film. We report investigation of open circuit rest potential (Eoc) voltammetry as one such method during electrodeposition of CdTe from aprotic electrolytes such as ethylene glycol. Plots of transient open circuit potential versus sweep voltage exhibit distinct transition and plateau structures corresponding to Te, CdTe, and Cd phases and correlating with the …

Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul

Theses and Dissertations

Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a ⁶⁰Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …

Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills

Theses and Dissertations

A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …