Materials Science and Engineering Commons^™

Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 10¹¹ s^-1. The RHEED specular …

Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. H. Yang, S.-Y. Young, Jason R. Hattrick-Simpers, M. Wuttig, L. G. Salamanca-Riba, I. Takeuchi

Faculty Publications

We have fabricated single crystal-like BiFeO₃ (BFO) thin films by flux-mediated epitaxy using pulsed laser deposition(PLD). The Bi–Cu–O flux composition and its thickness were optimized using composition spread, thickness gradient, and temperature gradient libraries. The optimized BFO thin films grown with this technique showed larger grain size of ∼2μm and higher dielectric constant in the range of 260–340 than those for standard PLD grown films. In addition, the leakage current density of the films was reduced by two orders of magnitude compared to that of standard PLD grown films.

Electrical Activation Studies Of Silicon Implanted Aluminum Gallium Nitride With High Aluminum Mole Fraction, Elizabeth A. Moore

Theses and Dissertations

This research demonstrates a method for producing highly conductive Si-implanted n-type aluminum gallium nitride (Al_xGa_1-xN) alloys, and represents a comprehensive analysis of the resulting material's electrical and optical properties as a function of Al mole fraction, anneal temperature, anneal time, and implantation dose. Highly conductive alloys are critical to the fabrication of devices operating in deep UV, high-temperature, high-power, and high-frequency environments, and thus this research is significant in regard to the application of such devices. The Al_xGa_1-xN wafers of this study, with Al concentrations of 10 to 50%, were implanted at …

Band Gap Engineering Of Two Dimensional Silicon Photonic Crystals By Oxidation And Oxide Etching, Makhin Thitsa

Electrical & Computer Engineering Theses & Dissertations

In this thesis a thorough analysis is presented on the effects of oxidation and oxide etching on the band structure of two dimensional silicon photonic crystals (2 D Si PC's). By using the plane wave expansion method (PWM), two structures of triangular lattice, namely, air cylinders embedded in a silicon background and silicon cylinders embedded in an air background are modeled. The thesis focuses on triangular lattice arrangement because for certain parameter values such a lattice can give rise to absolute band gap, which prohibits the propagation of either transverse electric (TE) or transverse magnetic (TM) polarizations.

During oxidation three …

Optical Parametric Oscillation In Orientation-Patterned Gallium Arsenide, Scott A. Shell

Theses and Dissertations

Tunable laser sources in the mid-infrared (MIR) spectral range are required for several Air Force applications. Existing lasers with output in the near-infrared can be converted to more desirable MIR by using nonlinear effects. Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques. This research examines optical parametric oscillation (OPO) of several OPGaAs samples using a 2.052 micrometers wavelength Tm, Ho:YLF pump laser. Of the seven samples available the five that were capable of getting OPO output with …

Cobalt Doping Of Semiconducting Boron Carbide Using Cobaltocene, Lonnie Carlson

Theses and Dissertations

The decomposition of cobaltocene and metacarborane (closo-1,7-dicarba-decaborane) under low energy electron irradiation at about 200 K results in a material with the Fermi level closer to the valence band than the material resulting from the decomposition of metacarborane alone. This indicates that cobaltocene provides a relatively p-type dopant as seen in ultraviolet photoemission spectroscopy/inverse photoemission spectroscopy. Upon warming to room temperature, however, the Fermi level shifts towards the conduction band, suggesting an n-type dopant. This temperature dependent surface photovoltage effect is not compelling evidence for the majority carrier type but does suggest an increase in the carrier concentration …

Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The growth of indium on a vicinal Si (100) - (2×1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD) was investigated by in situ reflection high-energy electron diffraction (RHEED). Recovery of the RHEED intensity was observed between laser pulses and when the growth was terminated. The surface diffusion coefficient of deposited In on initial two-dimensional (2D) In- (2×1) layer was determined. As growth proceeds, three-dimensional In islands grew on the 2D In- (2×1) layer. The RHEED specular profile was analyzed during film growth, while the grown In islands were examined by ex situ atomic force microscopy. The full …

Characterization Of Passivated Indium Antimonide, Catherine Ann Taylor

Theses and Dissertations

Infrared absorption and photoluminescence measurements have been used to optically characterize bulk-grown, 680-μm thick, indium antimonide (InSb), both as-grown and after passivation by either anodization or a 700-Å layer of silicon oxide (SiOx). Spectra were obtained using Fourier transform infrared (FT-IR) spectroscopy. Results include the effects of sample temperature in the range of 10 to 300 K and 4.636 μm laser pump power in the range of 28 mW to 1.43 W for the photoluminescence spectrum.

Application Of Electrolessplating Technology In Interconnection Manufacturing Of Ultralarge-Scale Integration, Zeng-Lin Wang, Zhi-Juan Liu, Hong-Yan Jiang, Xiu-Wen Wang, Shingubara Shoso

Journal of Electrochemistry

In this paper,research progresses in electroless plating for damascene copper process were reviewed.Electroless nickel ternary alloy deposition for barrier layer and electroless copper plating for seed layer were presented.Bottom-up copper fill high-aspect-via-hole and electroless plating after ICB-Pd catalytic layer for seed layer were mainly introduced.The applications of electroless plating in ultralarge-scale integration were discussed,and the developing tendency was also suggested.

Optical Characterization Of Thick Growth Orientation-Patterned Gallium Arsenide, Joshua W. Meyer

Theses and Dissertations

Tunable laser sources in the mid-infrared (MIR) spectral range are required for several Air Force applications. Existing lasers with output in the near-infrared can be converted to more desirable MIR by using nonlinear effects. Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques. This research examines the optical quality of seven OPGaAs crystal samples and explores the design of an optical parametric oscillator (OPO) device. The Air Force Research Laboratory Electro-Optical Countermeasures Technology Branch obtained the samples from …

Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada

Theses and Dissertations

Micro-Raman (µRaman) spectroscopy is an efficient, non-destructive technique widely used to determine the quality of semiconductor materials and microelectromechanical systems. This work characterizes the stress distribution in wurtzite gallium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. This wide bandgap semiconductor material is being considered by the Air Force Research Laboratory for the fabrication of shock-hardened MEMS accelerometers. µRaman spectroscopy is particularly useful for stress characterization because of its ability to measure the spectral shifts in Raman peaks in a material, and correlate those shifts to stress and strain. The spectral peak shift as a function of stress, …

Passive Multiple Beam Combination In Optical Fibers Via Stimulated Brillouin Scattering, Kirk C. Brown

Theses and Dissertations

Many active methods of scaling laser brightness have been demonstrated in recent years. The goal of this research was to demonstrate the feasibility of passively combining multiple laser beams using Stimulated Brillouin Scattering (SBS) in a long multimode optical fiber. This method of combination employed a “Gatling gun” fiber array that allowed several collimated beams to be focused by a lens into an optical fiber. The retroreflected Stokes beam is passed through the center of the beam combiner for analysis. In addition to experimental methodology and equipment used, the theoretical and historical background of SBS in optical fibers is provided. …

Analysis Of Photoconductive Properties In Ge2Sb2Te5 (Gst) Chalcogenide Films For Applications In Novel Electronics, John R. V. Chezem

Theses and Dissertations

This thesis investigated the thermal phase-change properties in Ge₂Sb₂Te₅ (GST) chalcogenide-based films and determined the feasibility of coupling the GST with photosensitive DNA material for novel optical device applications. Modeling and testing of GST were researched with the approach that GST would react as a resistive mechanism through thermal manipulation. A test structure was fabricated with a 2-micronmeter MEMS fabrication process. GST material was deposited (by RF sputtering) on the surface of the test structures. The GST was analyzed primarily in the amorphous to crystalline transition states due to more distinct changes in the resistance …

Characteristics Of Two-Dimensional Triangular And Three-Dimensional Face-Centered-Cubic Photonic Crystals, Jeffery D. Clark

Theses and Dissertations

The fabrication of photonic crystals (PhC) with photonic band gaps (PBG) in the visible range is a difficult task due to the small structural feature sizes of the PhC. The particular type of PhC examined is a two-dimensional (2-D) triangular structure with a PBG designed for visible wavelengths with applications in visible integrated photonic systems. This work examines the processes involved and viability of fabricating 2-D triangular PhC's by a variety of techniques: focused ion beam, electron lithography and holographic photo-polymerization/lithography. The design of the PhC was based on a program created to display gap maps for triangular structures. The …

Carrier Lifetime Dynamics Of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments, Wayne E. Eikenberry

Theses and Dissertations

GaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fast growth process called hydride vapor phase epitaxy (HVPE). Unfortunately, HVPE produces a high number of defects. These defects cause Shockley-Read-Hall recombination rates to dominate over Auger and radiative recombination rates. The carrier lifetime from four OP-GaAs samples are reported here using two different experimental techniques. The first experiment used a streak camera to measure the carrier lifetime via time-resolved photoluminescence. The temporal resolution of the streak camera …

Special Photoelectrochemical Response Of Nano-Crystalline Tio2 Electrode, Bi-Bo Lan, Jian-Zhang Zhou, Yan-Yan Xi, Hong-Xiang Chen, Guang-Hua Yao, Zhong-Hua Lin

Journal of Electrochemistry

The nano-crystalline TiO₂ electrodes were prepared by spread method,electrodeposition and sol-gel method.The experimental results show that the nano-crystalline TiO₂ electrodes have special photoelectrochemical response-the photocrrent-potential curves appear peaks.The special photoelectrochemical behaviors of nano-(crystalline) TiO₂  electrodes are ascribed to nano-structure as well as special light induced redox reaction mechanism of nano-crystalline semiconductor electrodes.

Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm ² fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …

Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Melting and solidification of as-deposited and recrystallized Bi crystallites, deposited on highly oriented 002-graphite at 423 K, were studied using reflection high-energy electron diffraction (RHEED). Films with mean thickness between 1.5 and 33 ML (monolayers) were studied. Ex situ atomic force microscopy was used to study the morphology and the size distribution of the formed nanocrystals. The as-deposited films grew in the form of three-dimensional crystallites with different shapes and sizes, while those recrystallized from the melt were formed in nearly similar shapes but different sizes. The change in the RHEED pattern with temperature was used to probe the melting …

Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner

Faculty Publications

The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO₂ using magnetron co-sputtering to investigate flatband voltage shift (ΔV_fb) , work function (Φ_m) , and leakage current density (J_L) variations. A more negative ΔV_fb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φ_m near the Ti-rich corners and higher Φ_m near the Ni- and Pt-rich corners. In addition, measured J_L values can be explained consistently with the observed Φ_m variations. Combinatorial methodologies prove to be useful …

Multiple Channel Laser Beam Combination And Phasing Using Stimulated Brillouin Scattering In Optical Fibers, Brent W. Grime

Theses and Dissertations

Brightness scaling lasers using stimulated Brillouin scattering (SBS) in optical fibers is explored. A multiple-channel amplifier approach is used to increase the total power of a laser system while avoiding a significant burden on a single channel. The work explores two approaches utilizing both SBS beam cleanup and SBS piston error conjugation. A unique beam combiner that takes advantage of the SBS beam cleanup properties of a long, gradient-index multimode fiber was designed and tested. The beam combiner was developed to combine multiple-channel laser beams simultaneously with high input and output coupling efficiency. The design for the SBS beam combiner …

Design, Fabrication, And Characterization Of An Electrostatically Actuated Microfluidic Valve, Ryan Dale Rivers

Master's Theses

Microfluidic device construction uses certain critical structures throughout many different applications. The valve structure remains one of the primary structures that present a barrier to miniaturization and portability. The extensive support devices required to power common microfluidic valves remove a significant amount of freedom from microfluidic device design. Moving to electrostatic methods of actuation could reduce the overall footprint of the microfluidic valve. This thesis covers three concept prototypes. Concept I presents an attempt at inlaying gold electrodes into polydimethylsiloxane substrates. Concept II attempts to use liquid silver injected into channels as electrode materials. Concept III uses aluminum sputtering to …

Using Electrodeposition To Fabricate Mould For Polymer Microfluidic Chip, Yi Luo, De-Nan Chu, Zhi-Feng Lou, Chong Liu, Li-Ding Wang

Journal of Electrochemistry

Many researches have been focused on polymer microfluidic chip in recent years and the mould plays an important role in its fabrication process. Using electrodepositingmethod to fabricate a metal mould for polymer microfluidic chip has been presented in this paper. An ultra-thick photoresist SU-8 was coated on a pretreated metal plate, after photolithography, nickel was electrodeposited in the patterned SU-8, then was removed the SU-8 to obtain a final metal mould. This methodreduces workload of electrodeposit largely. Applying counter current before deposit, adding additive to solution and vacuum anneal after demould have been used to improve the binding force between …

Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli

Theses and Dissertations

Micro-Raman (µ-Raman) spectroscopy is used to measure residual stress in two silicon carbide (SiC) poly-types: single-crystal, hexagonally symmetric 6H-SiC, and polycrystalline, cubic 3C-SiC thin films deposited on Si substrates. Both are used in micro-electrical-mechanical systems (MEMS) devices. By employing an incorporated piezoelectric stage with submicron positioning capabilities along with the Raman spectral acquisition, spatial scans are performed to reveal areas in the 6H-SiC MEMS structures that contain residual stress. Shifts in the transverse optical (TO) Stokes peaks of up to 2 cm^-1 are correlated to the material strain induced by the MEMS fabrication process through the development of phonon …

Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. J. Long, O. O. Famodu, M. Murakami, Jason R. Hattrick-Simpers, G. W. Rubloff, M. Stukowski, K. Rajan

Faculty Publications

We discuss techniques for managing and visualizing x-ray diffraction spectrum data for thin film composition spreads which map large fractions of ternary compositional phase diagrams. An in-house x-ray microdiffractometer is used to obtain spectra from over 500 different compositions on an individual spread. The MATLAB software is used to quickly organize the data and create various plots from which one can quickly grasp different information regarding structural and phase changes across the composition spreads. Such exercises are valuable in rapidly assessing the “overall” picture of the structural evolution across phase diagrams before focusing in on specific composition regions for detailed …

Tunable Multiferroic Properties In Nanocomposite Pbtio3-Cofe2O4 Epitaxial Thin Films, M. Murakami, K.-S. Chang, M. A. Aronova, C.-L. Lin, Ming H. Yu, Jason R. Hattrick-Simpers, M. Wuttig, I. Takeuchi, C. Gao, B. Hu, S. E. Lofland, L. A. Knauss, L. A. Bendersky

Faculty Publications

We report on the synthesis of PbTiO₃–CoFe₂O₄ multiferroic nanocomposites and continuous tuning of their ferroelectric and magnetic properties as a function of the average composition on thin-film composition spreads. The highest dielectric constant and nonlinear dielectric signal was observed at (PbTiO₃)₈₅–(CoFe₂O₄)₁₅, where robust magnetism was also observed. Transmission electron microscopy revealed a pancake-shaped epitaxial nanostructure of PbTiO₃ on the order of 30 nm embedded in the matrix of CoFe₂O₄ at this composition. Composition dependent ferroics properties observed here indicate that there …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]

Studies Of Infrared Optical Properties Of Palladium Nanoparticles With Different Sizes And Dispersed States, Yan-Xia Jiang, Hong-Gang Liao, Wei Chen, Shi-Gang Sun

Journal of Electrochemistry

Pd nanoparticles with different sizes and dispersed states were prepared. Their infrared optical properties were studied with CO molecule probe. The infrared spectroscopic investigation revealed that Pd_n of 6.6 nm and Pd_n(cube)of 100～150nmexhibit normal IR absorption. The center of IR bands are around 1970 cm^-1 and 1910cm^-1. Pd_nis introduced into the surface of electrode, and is induced by interface electric fieldto form the aggregation of nanoparticles Pd_n(ag). The Pd_n(ag) has a different IR optical property from Pd_n. The direction of IR absorption band of Pd_{n …}

Preparation And Optical Properties Of Highly Ordered Cds Nanowire Arrays, Lan Sun, Chang-Jian Lin

Journal of Electrochemistry

Highly ordered CdS nanowire arrays have been prepared by using dc electrodeposition in the porous anodic aluminum oxide template. Scanning electro microscopy (SEM) and transmission electron microscopy (TEM) reveal that the nanowires are uniform and highly ordered. The measurements of X-ray diffraction and high-resolved electron microscopy (HRTEM) show that the nanowires are hexagonal structure with the crystallographic c-axis preferentially oriented along the length of the pore. The UV-Vis absorption spectra of CdS nanowire arrays show that the absorption edges of the nanowire arrays shift towards short wavelength with the decrease of the nanowire size. The photoluminescence measurements show that the …

Preparation, Characterization And Photoelectrochemical Activities Of Cu-Tio2/Ito Films, Dong Shu, Chun He, Han-Xia Zhang, Ya Xiong

Journal of Electrochemistry

Cu-TiO₂/ITO films were prepared by direct photo-reduction deposition of Cu²⁺ on TiO₂/ITO films. The nanocomposite films were characterized by UV-vis diffuse reflectance spectra (DRS), XRD spectra, Scanning Electron Microscope (SEM) technology, and photovoltage measurement. The feasibility of improving the photocatalytic activity of TiO₂ film by combining the modification of Cu nanoparticles with the application of anodic bias was investigated. The experimental results showed that the deposited Cu has an apparent enhancement effect with respect to suppressing the recombination between the photogenerated charge carriers and enhancing the photocatalytic oxidation of formic acid. The combination could …

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …