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Full-Text Articles in Materials Science and Engineering

Giant Raman Enhancement On Nanoporous Gold Film By Conjugating With Nanoparticles For Single-Molecule Detection, Lihua Qian, Biswajit Das, Yan Li, Zhilin Yang Jan 2010

Giant Raman Enhancement On Nanoporous Gold Film By Conjugating With Nanoparticles For Single-Molecule Detection, Lihua Qian, Biswajit Das, Yan Li, Zhilin Yang

Electrical & Computer Engineering Faculty Research

Hot spots have the contradictively geometrical requirements for both the narrowest interstices to provide strong near-field coupling, and sufficient space to allow entrance of the analytes. Herein, a two-step method is employed to create hot spots within hybrid nanostructures, which consist of self-supported nanoporous gold films with the absorbed probes and subsequent nanoparticle conjugates without surface agents or mechanical motion. The molecules confined into 1 nm interstice exhibit 2.9 × 107 times enhancement in Raman scattering compared to pure nanoporous gold. Giant enhancement primarily results from strong near-field coupling between nanopore and nanoparticle, which is theoretically confirmed by finite-difference …


Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali Jan 2010

Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si (100)-(2×1) was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250 °C, a temperature too low for their formation without excitation. At a substrate temperature of 390 °C, electronic excitation during growth was found to improve the …


Synthesis And Characterization Of A [Ru(Bpy)2(Ncs)2] Derivative For Use As A Dye-Sensitizer In Nanocrystalline Solar Cells, Joel Thomas Kirner Jan 2010

Synthesis And Characterization Of A [Ru(Bpy)2(Ncs)2] Derivative For Use As A Dye-Sensitizer In Nanocrystalline Solar Cells, Joel Thomas Kirner

Honors Program Theses

After extensive review of the field of dye-sensitized solar cells, the molecule [Ru(4,4’- dicarboxy-2,2’-bipyridine)(4,4’-di-(2-(2-pyridyl)ethenyl)-2,2’-bipyridine)(NCS)2] has been designed as an original contribution to the field. This dye sensitizer was chosen by derivatizing upon the structure of the standard sensitizer, cis-diisothiocyanatobis(4,4’-dicarboxylic acid-2,2’- bipyridine)ruthenium(II) (N3), by extending the conjugation of one bipyridine ligand. This structural derivatization should enhance light harvesting by red-shifting the dye’s absorbance and increasing the dye’s molar absorptivity, which should result in a dye-sensitized solar cell with higher efficiency. The Density Functional Theory (DFT) molecular orbital calculations of the new dye complex indicate that the HOMO is highly localized …


Optical Properties Of Semiconducting Boron Carbide For Neutron Detection Applications, Ravi B. Billa Dec 2009

Optical Properties Of Semiconducting Boron Carbide For Neutron Detection Applications, Ravi B. Billa

Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research

Solid state neutron detection devices based on semiconducting boron carbide have the potential for nearly ideal neutron detection effciency for thermal neutrons. The present work is focused on characterizing optical properties of this semiconducting boron carbide material as a step in further development of the material for neutron detection and other applications.

Semiconducting boron carbide films were grown on silicon substrates using plasma enhanced chemical vapor deposition and their optical properties were characterized using variable angle spectroscopic ellipsometry over a wide spectral range, from mid-infrared to vacuum-ultraviolet wavelengths. The effects of deposition substrate temperature and of post-deposition heat treatments on …


Enhanced Visible Light Photoelectrochemical Performances With Nitrogen Doped Tio2 Nanowire Arrays, Xiao-Jun Lv, Yue-Ming Li, Hao Zhang, Da Chen, Jennifer Hensel, Jin Z Zhang, Jing-Hong Li Nov 2009

Enhanced Visible Light Photoelectrochemical Performances With Nitrogen Doped Tio2 Nanowire Arrays, Xiao-Jun Lv, Yue-Ming Li, Hao Zhang, Da Chen, Jennifer Hensel, Jin Z Zhang, Jing-Hong Li

Journal of Electrochemistry

Self-organized anodic anatase TiOnanowire arrays doped with nitrogen have been successfully fabri-cated and their photoelectrochemical(PEC) properties have been characterized and found to be substantially im-proved compared to undoped nanowires or commercial P25 nanoparticles.Photocurrent measured with monochro-matic incident light showed that the incident photon-to-current efficiency(IPCE,%) values of nanowire arrayelectrodes with or without N-doping were obviously higher than that of commercial P25 nanoparticle electrodes,and nitrogen-doped TiOnanowire arrays(NTNA) had noticeable absorption in the visible region.The NTNAelectrodes showed the highest photocurrent density and power conversion efficiency under 100 mW/cmvisiblelight illumination.A maximumolphotoconversion efficiency of 0.52% was achieved for the …


Feasibility Of Ellipsometric Sensor Development For Use During Pecvd Siox Coated Polymer Product Manufacturing, Daniel Lynn Helms Sep 2009

Feasibility Of Ellipsometric Sensor Development For Use During Pecvd Siox Coated Polymer Product Manufacturing, Daniel Lynn Helms

Master's Theses

Polymeric materials have provided pathways to products that could not be manufactured otherwise. A new technology which merges the benefits of ceramics into these polymer products has created materials ideally suited to many different industries, like food packaging. Nano Scale Surface Systems, Inc. (NS3), a company which coats polymers with ceramic oxides like SiO2 through a process known as plasma enhanced chemical vapor deposition (PECVD), was interested in the feasibility of an in line measurement system for monitoring the deposited films on various polymer products. This project examined two different coated polymer products, polyethylene terephthalate (PET) beverage containers and biaxially …


The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim Aug 2009

The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim

Undergraduate Research Opportunities Program (UROP)

Gallium nitride (GaN) is a group-III nitride semiconductor; which may prove useful in developing optical instruments that operate under high ambient pressures. The purpose of this project is to examine the properties of GaN under varying conditions. The methods used in this experiment consist of modeling free energy as a function of lattice constants; calculating bond lengths, bond strengths, and bulk moduli; and comparing the resultant data with values in published literature. We will also compare these results with experimental data drawn from x-ray diffraction scans. By doing so, we hope to determine whether gallium nitride is suitable for use …


Development Of A Low Cost Handheld Microfluidic Phosphate Colorimeter For Water Quality Analysis, Sean C. Kaylor Aug 2009

Development Of A Low Cost Handheld Microfluidic Phosphate Colorimeter For Water Quality Analysis, Sean C. Kaylor

Master's Theses

This thesis describes the design, fabrication, and testing process for a microfluidic phosphate colorimeter utilized for water quality analysis. The device can be powered by, and interfaced for data collection with, a common cell phone or laptop to dramatically reduce costs. Unlike commercially available colorimeters, this device does not require the user to measure or mix sample and reagent. A disposable poly(dimethylsiloxane) (PDMS) microfluid chip, powered by an absorption pumping mechanism, was used to draw water samples, mix the sample at a specific ratio with a molybdovanadate reagent, and load both fluids into an onboard cuvette for colorimetric analysis. A …


Morphology Of Ingaas Multilayer Nanostructure On Gaas High-Index Surfaces, Yanze Xie Aug 2009

Morphology Of Ingaas Multilayer Nanostructure On Gaas High-Index Surfaces, Yanze Xie

Graduate Theses and Dissertations

This work aimed to explore nanostructure configuration by growing multiple layers of strained InGaAs on GaAs high index surface. The knowledge learned would help to achieve a comprehensive picture of strain-driven nanostructure evolution. Ordered arrays of InGaAs quantum dots were demonstrated on GaAs(311)B. The ordering patterns depended on the thickness of GaAs interlayer between InGaAs Quantum Dots (QDs). With an increased interfacial thickness, a transition from two dimensional (2D) lateral ordering to 1D dot chains was observed. InGaAs growth on GaAs(311)A and GaAs(331)A ended up with 1D quantum wires (QWRs). Straight InGaAs QWRs were uniformly distributed across the surfaces owing …


Proton Irradiation Effects On Semiconductor Cdse/Zns Core/Shell Nanocrystals, Stephen Graham Charter Aug 2009

Proton Irradiation Effects On Semiconductor Cdse/Zns Core/Shell Nanocrystals, Stephen Graham Charter

Graduate Theses and Dissertations

The absorbance and photoluminescence measurement of semiconductor CdSe/ZnS core shell nanocrystals were reviewed and investigated after they were exposed to proton irradiation. The CdSe/ZnS core shell nanocrystals of 3.2nm and 4.4nm were commercially purchased and investigated. These nanocrystals were embedded in UV resin. Proton irradiation of energy 2MeV was applied at doses from 3 x 1013 protons cm-2 to 1.47 x 1015 protons cm-2 for both nanocrystal sizes. Absorbance measurements were conducted at 300K. Results from absorbance measurements showed slight broadening of the first exciton peak of both samples but was most noticeable in the 3.2nm nanocrystal sample. UV resin …


Metamaterial Devices For The Terahertz Band, Gabriel Paul Kniffin Jun 2009

Metamaterial Devices For The Terahertz Band, Gabriel Paul Kniffin

Center for Electron Microscopy and Nanofabrication Publications and Presentations

Terahertz (THz) and metamaterials are both hot topics in electromagnetics research. The THz band (0.1-10 THz) lies in the ‘gap’ between microwave and far infrared regions. Research is currently underway to characterize how these waves interact with matter, with potential applications including security screening, medical imaging, and non-destructive evaluation. Metamaterials are artificial materials containing sub-wavelength structures whose material properties, μ and ǫ can be ‘tuned’ to desired specifications, including simultaneously negative values, resulting in exotic properties such as a negative refractive index. Current metamaterials research includes the design of devices that operate at THz frequencies, filling a niche left wide …


Droplet Assisted Self-Assembly Of Semiconductor Nanostructures, Kimberly Annosha Sablon May 2009

Droplet Assisted Self-Assembly Of Semiconductor Nanostructures, Kimberly Annosha Sablon

Graduate Theses and Dissertations

There is increasing interest in quantum dot (QD) structures for a plethora of applications, including optoelectronic devices, quantum computing and energy harvesting. While strain driven surface diffusion via stranski-krastanow (SK) method has been commonly used to fabricate these structures, a more recent technique, droplet epitaxy (DE) does not require mismatch strain and is therefore much more flexible in the combination of materials utilized for the formation of QDs.

As reported in this work, a hybrid approach that combines DE and SK techniques for realizing lateral ordering of QDs was explored. First, the droplet formation of various materials was discussed and …


A Comparative Study Of The Bidirectional Reflectance Distribution Function Of Several Surfaces As A Mid-Wave Infrared Diffuse Reflectance Standard, Bradley Balling Mar 2009

A Comparative Study Of The Bidirectional Reflectance Distribution Function Of Several Surfaces As A Mid-Wave Infrared Diffuse Reflectance Standard, Bradley Balling

Theses and Dissertations

The Bi-Directional Reflectance Distribution Function (BRDF) has a well defined diffuse measurement standard in the ultraviolet, visible, and near infrared (NIR), Spectralon(trade name). It is predictable, stable, repeatable, and has low surface variation because it is a bulk scatterer. In the mid-wave IR (MWIR) and long-wave IR (LWIR), there is not such a well-defined standard. There are well-defined directional hemispherical reflectance (DHR) standards, but the process of integrating BRDF measurements into DHR for the purpose of calibration is problematic, at best. Direct BRDF measurement standards are needed. This study use current calibration techniques to ensure valid measurements and then systematically …


Wave Optics Simulation Of Optically Augmented Retroreflections For Monostatic/Bistatic Detection, John J. Tatar Iii Mar 2009

Wave Optics Simulation Of Optically Augmented Retroreflections For Monostatic/Bistatic Detection, John J. Tatar Iii

Theses and Dissertations

Optical devices interrogated with a laser in the appropriate band can exhibit strong, deterministic reflections of the incident beam. This characteristic could be exploited for optical target detection and identification. The distribution of reflected power is strongly dependent on the geometry of the interrogation scenario, atmospheric conditions, and the cross section of the target optical device. Previous work on laser interrogation systems in this area has focused on analytic models or testing. To the best of my knowledge, I am presenting for the first time an approach to predict reflected power for a variety of interrogation configurations, targets, and propagation …


Optimization Of Gan Laser Diodes Using 1d And 2d Optical Simulations, Sean Richard Keali'i Jobe Mar 2009

Optimization Of Gan Laser Diodes Using 1d And 2d Optical Simulations, Sean Richard Keali'i Jobe

Master's Theses

This paper studies the optical properties of a GaN Laser Diode (LD). Through simulation, the GaN LD is optimized for the best optical confinement factor. It is found that there are optimal thicknesses of each layer in the diode that yield the highest optical confinement factor. There is a strong relationship between the optical confinement factor and lasing threshold—a higher optical confinement factor results in a lower lasing threshold. Increasing optical confinement improves lasing efficiency. Blue LDs are important to the future of lighting sources as they represent the final color in the RGB spectrum that does not have a …


Photoelectrochemical Properties Of Tio2 Nanoparticles, Jie Qu, Ying Li, Qi-Wei Jiang, Xue-Ping Gao Feb 2009

Photoelectrochemical Properties Of Tio2 Nanoparticles, Jie Qu, Ying Li, Qi-Wei Jiang, Xue-Ping Gao

Journal of Electrochemistry

The protonated titanate nanoparticles were obtained at room temperature and subsequently calcined at different temperatures(300 ℃,400 ℃,500 ℃,600 ℃ and 700 ℃) in air.The obtained products were characterized by XRD,TEM and UV-Vis.It is found that the grain sizes of TiO2 nanoparticles calcined at 300 ℃ were about 20 nm,and increased gradually with the temperature rise.Photoelectric performance was measured with I~V curve and electrochemical impedance spectroscopy(EIS).The TiO2 nanoparticles obtained at 500 ℃ showed the best photoelectrochemical properties with a photovoltaic conversion efficiency of 6.39%,which is much higher than those at other temperatures.In addition,it is also demonstrated that the charge …


Characterization Of A Viscoelastic Response From Thin Metal Films Deposited On Silicon For Microsystem Applications, Steven L. Meredith Jan 2009

Characterization Of A Viscoelastic Response From Thin Metal Films Deposited On Silicon For Microsystem Applications, Steven L. Meredith

Master's Theses

Understanding the mechanisms that control the mechanical behavior of microscale actuators is necessary to design an actuator that responds to an applied actuation force with the desired behavior. Micro actuators which employ a diaphragm supported by torsional hinges which deform during actuation are used in many applications where device stability and reliability are critical. The material response to the stress developed within the hinge during actuation controls how the actuator will respond to the actuating force. A fully recoverable non-linear viscoelastic response has been observed in electrostatically driven micro actuators employing torsional hinges of silicon covered with thin metal films. …


Model For Alumina Nanopore-Based Optical Filter, Nathan Lehman, Rama Venkat, Robert A. Schill Jan 2009

Model For Alumina Nanopore-Based Optical Filter, Nathan Lehman, Rama Venkat, Robert A. Schill

Electrical & Computer Engineering Faculty Research

Alumina nanopore structures find applications in magnetic sensors, optical filters, and various biological devices. In this work, we present a ray-optics model for the optical filter. We present a detailed simulation and a simplified analytical expression for the reflectance as a function of the alumina parameters such as pore diameter, pore density, alumina thickness, and a function of the wavelength and angle of incidence of the illuminating plane electromagnetic wave. The reflectance vs wavelength in the range of 400–800nm obtained from the simulation and the analytical expression are compared with that of the experiments for thin and thick alumina. All …


Design, Fabrication, Modeling And Characterization Of Electrostatically-Actuated Silicon Membranes, Brian C. Stahl Dec 2008

Design, Fabrication, Modeling And Characterization Of Electrostatically-Actuated Silicon Membranes, Brian C. Stahl

Master's Theses

This thesis covers the design, fabrication, modeling and characterization of electrostatically actuated silicon membranes, with applications to microelectromechanical systems (MEMS). A microfabrication process was designed to realize thin membranes etched into a silicon wafer using a wet anisotropic etching process. These flexible membranes were bonded to a rigid counterelectrode using a photo-patterned gap layer. The membranes were actuated electrostatically by applying a voltage bias across the electrode gap formed by the membrane and the counterelectrode, causing the membrane to deflect towards the counterelectrode. This deflection was characterized for a range of actuating voltages and these results were compared to the …


Study On The Texturization Of C-Si Wafers By Different Kinds Of Alkaline For Heterojunction Solar Cells, Yu-Hua Dou, Yu-Qin Zhou, Mei-Fang Zhu, Shuang Song, Feng-Zhen Liu, Jin-Long Liu, Zhan-Jun Zhang Nov 2008

Study On The Texturization Of C-Si Wafers By Different Kinds Of Alkaline For Heterojunction Solar Cells, Yu-Hua Dou, Yu-Qin Zhou, Mei-Fang Zhu, Shuang Song, Feng-Zhen Liu, Jin-Long Liu, Zhan-Jun Zhang

Journal of Electrochemistry

The texturization of(100) crystalline silicon(c-Si) wafer was studied by field-emission scanning electron microscope using different kinds of etchant: sodium hydroxide,sodium carbonate and tribasic sodium phosphate.By optimizing the etching parameters,the lowest values of averaged reflectance(Rav) were obtained to be 9.70% for NaOH,9.76% for Na2CO3 and 8.63% for Na3PO4·12H2O,which is comparable to that of the wafer with textured surface covered with an anti-reflection coating of either silicon nitride or thermally grown silicon dioxide.The relation of Rav and surface morphology of textured wafer was analyzed.Moreover,special emphasis was put on the role of isopropyl alcohol(IPA) …


Preparation And Optical Transmission Of The Zno Nanorod Array Films, Feng Ye, Jing-Jing Li, Tong-Tao Wang, Yong-Liang Wang, Yun Liu, Xin-Dong Wang Nov 2008

Preparation And Optical Transmission Of The Zno Nanorod Array Films, Feng Ye, Jing-Jing Li, Tong-Tao Wang, Yong-Liang Wang, Yun Liu, Xin-Dong Wang

Journal of Electrochemistry

By using a galvaostatic electrodeposition method in the ZnCl2 solution,the highly oriented ZnO nanorod array films have been successfully prepared on ITO substrate after the pretreatment with ZnO nanoparticles.And they were characterized by scanning electron microscope,X-ray diffraction and transmittance spectra.The results indicated that the ZnO nanorod arrays grew along(001) direction with an orientation perpendicular to the substrate.When the wavelength of incident was over 380 nm,the ZnO nanorod arrays showed high optical transmission of above 95%.Furthermore,the band gap became narrower.


The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory Jun 2008

The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory

Theses and Dissertations

AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 1013 electrons/cm2 or 1010 neutrons/cm2 due …


Preparation And Photoelectrochemical Properties Of Fe-Doped Tio2 Nanotube Arrays, Jing Li, Lan Sun, Hui-Fang Zhuang, Cheng-Lin Wang, Rong-Gui Du, Chang-Jian Lin May 2008

Preparation And Photoelectrochemical Properties Of Fe-Doped Tio2 Nanotube Arrays, Jing Li, Lan Sun, Hui-Fang Zhuang, Cheng-Lin Wang, Rong-Gui Du, Chang-Jian Lin

Journal of Electrochemistry

The Fe-doped TiO2 nanotube arrays were fabricated in Fe(NO3)3-HF mixing solutions by electrochemical anodic oxidation method,and characterized by FESEM,Raman,XPS and DRS.The effect of Fe concentratiions on photoelectrochemical property of the arrays was also investigated.The diameters and lengths of Fe-doped TiO2 nanotube arrays were 50~90 nm and about 200 nm,respectively.Compared with the undoped TiO2 nanotube arrays,the absorption edge of Fe-doped TiO2 nanotube arrays appeared red shifting.The more Fe content,the larger red shifting,in addition,the photocurrent of Fe-doped TiO2 nanotube arrays increased obviously.


The Effect Of Vibratory Milling On The Powder Properties Of Zinc Oxide Varistors, Maura Kelleher, M.S.J. Hashmi May 2008

The Effect Of Vibratory Milling On The Powder Properties Of Zinc Oxide Varistors, Maura Kelleher, M.S.J. Hashmi

Articles

The formation of powders from multi-elemental oxides for the subsequent formation of a green and sintered compact body is a major processing operation in the manufacture of ZnO varistors. The physical and chemical properties of the metal oxides are crucial not only for the formation of a varistor component with optimum microstructure and thus electrical characteristics but also for avoiding the introduction of flaws and reduced yield during subsequent manufacturing stages. The effect of vibratory milling using cylindrical zirconia media on the physical and chemical properties of the mixed multi-elemental oxide additives of a commercial ZnO varistor formulation was studied. …


Optical Properties Of Colloidal Core/Shell Nanocrystals, Abhishek Joshi May 2008

Optical Properties Of Colloidal Core/Shell Nanocrystals, Abhishek Joshi

Electrical Engineering Undergraduate Honors Theses

Recently, colloidal core/shell nanocrystals have found use in several applications such as solar cells, light emitting diodes, fluorescent dies, etc. In this thesis, optical properties of colloidal CdSe/ZnS core/shell nanocrystals were studied. The samples were prepared such that the nanocrystals were embedded in a UV curable resin. Once the samples were cured, they were placed in different spectrophotometers to measure the absorbance and the photoluminescence (PL) spectrum. The effect on the absorbance and PL spectra was investigated by using nanocrystal samples of different quantum dot sizes and by changing the temperature of the samples. It was found that the energy …


Development Of Low Temperature Alpha Alumina Coatings By Ac Magnetron Sputtering, Andrew Cloud May 2008

Development Of Low Temperature Alpha Alumina Coatings By Ac Magnetron Sputtering, Andrew Cloud

Mechanical Engineering Undergraduate Honors Theses

Alpha-phase aluminum oxide thin films were created using an Isoflux ICM-10 dual target inverted cylindrical magnetron sputtering system using mid-frequency AC power supplies. Alpha alumina films were deposited at a magnetron power of 6 kW, 50% oxygen partial pressure by volume, and -35 V DC bias. Film thickness, substrate material, and position and orientation within the deposition chamber were varied. To ensure the deposition conditions are suitable for alloys, the substrate temperature was measured using temperature indicating liquids. The experimental results, supported by Explicit Euler numerical analysis, revealed a steady state temperature of ~480°C at 6kW. Transmission electron microscopy (TEM) …


An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das Mar 2008

An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das

Electrical & Computer Engineering Faculty Research

Nanoparticles of metals and semiconductors are promising for the implementation of a variety of photonic and electronic devices with superior performances and new functionalities. However, their successful implementation has been limited due to the lack of appropriate fabrication processes that are suitable for volume manufacturing. The current techniques for the fabrication of nanoparticles either are solution based, thus requiring complex surface passivation, or have severe constraints over the choice of particle size and material. We have developed an ultrahigh vacuum system for the implementation of a complex nanosystem that is flexible and compatible with the silicon integrated circuit process, thus …


Nano Quasicrystal Formation And Local Atomic Structure In Zr––Pd And Zr––Pt Binary Metallic Glasses, Junji Saida, Takashi Sanada, Shigeo Sato, Muneyuki Imafuku, Chunfei Li, Akihisa Inoue Jan 2008

Nano Quasicrystal Formation And Local Atomic Structure In Zr––Pd And Zr––Pt Binary Metallic Glasses, Junji Saida, Takashi Sanada, Shigeo Sato, Muneyuki Imafuku, Chunfei Li, Akihisa Inoue

Center for Electron Microscopy and Nanofabrication Publications and Presentations

Formation of the nanoscale icosahedral quasicrystalline phase (I-phase) in the melt-spun Zr70Pd30 and Zr80Pt20 binary metallic glasses were reported. Local atomic structure in the glassy and quasicrystal (QC)-formed states were also analyzed by XRD and EXAFS measurements in order to investigate the formation mechanism of QC phase. The distorted icosahedral-like local structure can be identified around Zr atom in the Zr70Pd30 metallic glass. In the QC formation process, a change of local environment around Zr is detected, in which the approximately one Zr atom substitutes for one Pd atom. In contrast, …


Growth Rate Calculations For Epitaxially Grown Thin Films, D. Bullock Jan 2008

Growth Rate Calculations For Epitaxially Grown Thin Films, D. Bullock

Journal of the Arkansas Academy of Science

No abstract provided.


Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali Jan 2008

Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …