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Full-Text Articles in Materials Science and Engineering

Photodetectors And Photovoltaic Devices Based On Semiconductor Nanomaterials, Jiang Wu Dec 2011

Photodetectors And Photovoltaic Devices Based On Semiconductor Nanomaterials, Jiang Wu

Graduate Theses and Dissertations

Photodetectors based various nanostructures and plasmon enhanced solar cells are investigated in this dissertation. The motivation of the dissertation rise is driven by urgent need of both high efficiency photodetectors and solar cells.

First, quantum dot infrared photodetectors have been intensely investigated due to their promise in high performance photodetectors. However, the strain-driven growth of quantum dots has hindered the progress of quantum dot photodetectors. The presence of strain in the device presents complexity in designing as well as defects. Therefore, in this project, new designs of quantum dot photodetector structures are presented to improve the control over detection wavelength. …


In-Situ Ellipsometry Characterization Of Anodically Grown Silicon Dioxide And Lithium Intercalation Into Silicon, Eric A. Montgomery Nov 2011

In-Situ Ellipsometry Characterization Of Anodically Grown Silicon Dioxide And Lithium Intercalation Into Silicon, Eric A. Montgomery

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, in-situ ellipsometry and electroanalytical investigations of two electrochemical processes are reported: including the formation of anodically grown silicon dioxide and the intercalation of lithium into silicon. Analysis of the ellipsometry data shows that the anodically grown silicon dioxide layer is uniform and has similar properties as thermally grown silicon dioxide. The lithium-ion intercalation data reveals non-uniform thin film formation, which requires further studies and development of appropriate ellipsometric optical models.

Advisers: Eva Schubert and Mathias Schubert


Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff Nov 2011

Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff

Physics - All Scholarship

We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n2+/h (n – film refractive index, λ – optical wavelength, h …


Effect On The Processing Characteristics Of Zno Varistors Produced Using Vibratory Milling, Maura Kelleher, M.S.J. Hashmi Oct 2011

Effect On The Processing Characteristics Of Zno Varistors Produced Using Vibratory Milling, Maura Kelleher, M.S.J. Hashmi

Conference Papers

Abstract. Each manufacturing stage in the production of zinc oxide varistors from powder preparation to the final encapsulated device is important not only for the formation of the varistor component with optimum microstructure and thus electrical characteristics but also for avoiding the introduction of flaws and reduced yield. In this paper the authors describe and discuss the effect of multi-elemental oxide additives having been milled for different durations using a vibratory mill with cylindrical zirconia media on the powder characteristics of the subsequent processing stages. A commercial ZnO varistor formulation was used. The subsequent processing stages that are given particular …


Study Of Novel Materials For Organic Photovoltaics And Organic/Inorganic Hybrid Solar Cells, Viney Saini Aug 2011

Study Of Novel Materials For Organic Photovoltaics And Organic/Inorganic Hybrid Solar Cells, Viney Saini

Theses and Dissertations

As the human race evolves and continues to progress in the future, we will face some obstacles during the advancement. Challenges like water, food, and poverty crisis, pollution, population explosion, and diseases are impediments in the development of mankind. Above all, with the development arises the need to fulfill the energy requirements. There are number of technologies available to answer the present energy needs, e.g. coal, nuclear, oil/natural gas, hydropower, etc. All these technologies have their advantages and disadvantages, with disadvantages being greenhouse gas emissions and other environmental impacts. One technology which has lagged behind due to high cost is …


Synthesis, Field Emission And Associated Degradation Mechanisms Of Tapered Zno Nanorods, Gregory M. Wrobel Mr. Aug 2011

Synthesis, Field Emission And Associated Degradation Mechanisms Of Tapered Zno Nanorods, Gregory M. Wrobel Mr.

Master's Theses

Equation 1..... 4

Equation 2..... 4

Equation 3..... 6

Equation 4..... 7

Equation 5..... 9

Equation 6..... 10

Equation 7..... 11

Equation 8..... 12

Equation 9..... 14

Equation 10..... 40

Equation 11..... 51

Synthesis, Field Emission and Associated Degradation Mechanisms of Tapered ZnO Nanorods

Gregory Michael Wrobel, M.S.

University of Connecticut, 2011

Modern development of field emitter arrays (FEA) has been made possible, partly thanks to the synthesis and development of one-dimensional (1D) nanostructures. High aspect ratio 1D nanostructures effectively amplify the electric field at the emitter tips, allowing electrons to be extracted at relatively low electric field. An inexpensive …


Fabrication And Characterization Of Zno/Cuo Core-Shell Nanowire Arrays, Kuo-Ting Liao Aug 2011

Fabrication And Characterization Of Zno/Cuo Core-Shell Nanowire Arrays, Kuo-Ting Liao

Master's Theses

Research into nanomaterials has become more and more popular because of their unique properties compared to bulk materials. Amongst various functional materials, zinc oxide (ZnO), with a direct electron energy band gap of 3.34 eV at room temperature, is an important optoelectronic material with an intrinsically n-type semiconducting property. However, to form a p-type ZnO semiconductor is still a challenge. Copper oxide (CuO), compared to ZnO, has a much smaller band gap, 1.2 eV, and shows an intrinsically p-type semiconducting property. It has been suggested that when CuO is alloyed with ZnO properly, a p-n semiconductor heterojunction can be formed …


Design, Fabrication, And Characterization Of A Thin-Film Nickel-Titanium Shape Memory Alloy Diaphragm For Use In Micro-Electro-Mechanical Systems, Brian Joel Alvarez Aug 2011

Design, Fabrication, And Characterization Of A Thin-Film Nickel-Titanium Shape Memory Alloy Diaphragm For Use In Micro-Electro-Mechanical Systems, Brian Joel Alvarez

Master's Theses

Previous work done at Cal Poly has shown that thin-film nickel-titanium (NiTi) can be easily sputtered onto silicon wafers and annealed to create a crystallized shape memory alloy (SMA) film. Initial work on creating devices yielded cantilevers that were highly warped due to thin-film stress created during the sputtering process. The objective of this work was to create a thin-film NiTi SMA device that could be better characterized. A membrane was selected due to the simplicity of fabrication and testing which would also oppose the thin-film stress due to the increase in attachment points to the substrate.

Silicon wafers were …


Structural, Electrical And Thermoelectric Properties Of Chromium Silicate Thin Films, Makram Abd El Qader Aug 2011

Structural, Electrical And Thermoelectric Properties Of Chromium Silicate Thin Films, Makram Abd El Qader

UNLV Theses, Dissertations, Professional Papers, and Capstones

Thermoelectric devices can generate electrical power as a result of their ability to produce electrical currents in the presence of thermal gradients. They can also produce refrigerative cooling when electrical power is supplied to them. Among the potential semiconducting silicides, CrSi 2 is attractive because of its high thermal and chemical stability and its potential for thermoelectric application. CrSi2 /SiO2 thin-film structures were prepared using RF sputtering. As deposited and annealed (300°C to 600°C) thin films were characterized for their structural, electrical, and thermoelectric transport properties. As-sputtered CrSi 2 film is amorphous at room temperature and crystallizes around …


Synthesis And Characterization Of Cdse-Zns Core-Shell Quantum Dots For Increased Quantum Yield, Joshua James Angell Jul 2011

Synthesis And Characterization Of Cdse-Zns Core-Shell Quantum Dots For Increased Quantum Yield, Joshua James Angell

Master's Theses

Quantum dots are semiconductor nanocrystals that have tunable emission through changes in their size. Producing bright, efficient quantum dots with stable fluorescence is important for using them in applications in lighting, photovoltaics, and biological imaging. This study aimed to optimize the process for coating CdSe quantum dots (which are colloidally suspended in octadecene) with a ZnS shell through the pyrolysis of organometallic precursors to increase their fluorescence and stability. This process was optimized by determining the ZnS shell thickness between 0.53 and 5.47 monolayers and the Zn:S ratio in the precursor solution between 0.23:1 and 1.6:1 that maximized the relative …


Final Design Review: Design Of An Integrated Solar Cell Array To Power A Solar Ear Hearing Aid Battery Recharger, Christina (Chrissa) Blattner, Scott Carey, Jared Myren, Faye Siao Jun 2011

Final Design Review: Design Of An Integrated Solar Cell Array To Power A Solar Ear Hearing Aid Battery Recharger, Christina (Chrissa) Blattner, Scott Carey, Jared Myren, Faye Siao

Materials Engineering

As the energy of fossil fuel supplies are fast depleting due to high consumptions of energy by human beings, the need for other sources of energy, such as solar energy, has become a viable option. By creating solar cell arrays the desired voltage can be generated. The overall goal of the Solar Ear project is to create an array of photovoltaic cells connected with aluminum tracings to recharge batteries that are specifically used for hearing aids. The goal embodies two main areas: the design of a processing method to connect the cells during a micro-fabrication process and the creation of …


Determining A Method For Rendering Low Cost Cdse(Zns) Core(Shell) Quantum Dots Aqueous Soluble Via Amphiphilic Polymer Wrapping, Patrick Mcbride Jun 2011

Determining A Method For Rendering Low Cost Cdse(Zns) Core(Shell) Quantum Dots Aqueous Soluble Via Amphiphilic Polymer Wrapping, Patrick Mcbride

Materials Engineering

Herein is described the procedure of two amphiphilic polymer wrapping techniques that may be employed for obtaining aqueous soluble quantum dots (QDs) for use in biological fluorescent imaging applications. The advent of QDs has led to new nanoscale fluorescent materials that exhibit unparalleled quantum yields (QYs), high resistance to photobleaching, tunable emissions, and
absorption over a large optical range. However, the QD synthesis employed here at Cal Poly to obtain bright, photostable CdSe(ZnS) core(shell) QDs involves the use of organic solvents and surfactants, leading to hydrophobic QDs. Since all of biology relies on aqueous solubility, this hydrophobicity creates a major …


Design And Characterization Of A Process For Bulk Synthesis Of Cadmium Selenide Quantum Dots, Susan Harada Jun 2011

Design And Characterization Of A Process For Bulk Synthesis Of Cadmium Selenide Quantum Dots, Susan Harada

Materials Engineering

The objective of the process is to synthesize quantum dots that will fluoresce over the visible spectrum of 450 to 650nm; then to mix the quantum dots together in a polymer matrix so that when illuminated with a blue LED the mixture yields “white” light. The current quantum dot synthesis is a chemical process that involves adding a room temperature Se-TOP precursor to a 225°C Cd precursor solution to cause nucleation and growth of nanoparticles. This method, however, only yields quantum dots that fluoresce in the 520 to 600nm range. In order to create the “white” light phosphor replacement, red …


The Design And Manufacture Of A Microfluidic Reactor For Synthesis Of Cadmium Selenide Quantum Dots Using Silicon And Glass Substrates, Peter Gonsalves Jun 2011

The Design And Manufacture Of A Microfluidic Reactor For Synthesis Of Cadmium Selenide Quantum Dots Using Silicon And Glass Substrates, Peter Gonsalves

Materials Engineering

A microfluidic reactor for synthesizing cadmium selenide (CdSe) quantum dots (QDs) was synthesized out of silicon and Pyrex glass. Microfabrication techniques were used to etch the channels into the silicon wafer. Holes were wet-drilled into Pyrex glass using a diamond-tip drill bit. The Pyrex wafer was aligned to the etched silicon wafer and both were anodically bonded to complete the microfluidic reactor. Conditions for anodic bonding were created by exposing the stacked substrates to 300V at ~350oC under 5.46N of force.  Bulk CdSe solution was mixed at room temperature and treated as a single injection. The syringe containing …


Influence Of Tert-Butylpyridine On The Band Energetics Of Nanostructured Tio2 Electrodes And The Photoelectrochemical Properties Of Dye-Seneitized Electrodes, Shu-Ming Yang, Ji-Chao Wang, Hui-Zhi Kou, Hong-Bin Xue, Hong-Jun Wang, Yu-Ling Guo May 2011

Influence Of Tert-Butylpyridine On The Band Energetics Of Nanostructured Tio2 Electrodes And The Photoelectrochemical Properties Of Dye-Seneitized Electrodes, Shu-Ming Yang, Ji-Chao Wang, Hui-Zhi Kou, Hong-Bin Xue, Hong-Jun Wang, Yu-Ling Guo

Journal of Electrochemistry

The flat band edges (Efb) of nanostructured TiO2 electrodes in electrolyte solutions with tert-butylpyridine (TBP) of different concentrations have been determined with spectroelectrochemical technique. TBP played a role in band energetics of nanostructured TiO2 electrodes. The Efb values of -2.25, -2.46 and -2.62 V were determined in three 0.2 mol•L-1 tetrabutylammonium perchlorate (TBAP) acetonitrile electrolytes which contain 0, 0.2 and 0.4 mol•L-1 TBP respectively. The addition of Li+ ions shifted Efb positively. The Efb values of -1.12, -1.22 and -1.30 V were determined in three 0.2 mol•L-1 LiClO4 acetonitrile electrolytes which contain 0, 0.2 …


Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis May 2011

Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis

Faculty Publications

Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …


Plasmonic Effect On The Photoluminescence Of Inas Quantum Dot Nanostructures, David Fryauf May 2011

Plasmonic Effect On The Photoluminescence Of Inas Quantum Dot Nanostructures, David Fryauf

Electrical Engineering Undergraduate Honors Theses

New materials for thin film photovoltaic applications are being explored worldwide, and one of the most popular new implementations is the introduction of an intermediate band gap in the semiconductor energy structure. Careful manipulation of semiconductor lattice material can form nanostructures such as quantum dots, which can be tuned to control specific intermediate energy levels. The introduction of an intermediate band in photovoltaic devices has a theoretical potential sunlight-toelectricity efficiency of roughly 63%. However, a specific material challenge of these thin film devices is limited absorption of long wavelengths of light. To increase absorption of the sun's visible spectrum, plasmonic …


Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume Mar 2011

Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume

Theses and Dissertations

This document addresses two major obstacles facing metamaterial development: uncertainty in the characterization of electromagnetic field behavior in metamaterial structures and the relatively small operational bandwidth of metamaterial structures. To address the first obstacle, a method of prediction aided measurement is developed and exploited to examine the field interactions within metamaterial devices. The fusion of simulation and measurement techniques enhances the understanding of the physical interactions of fields in the presence of metamaterials. To address the second obstacle, this document characterizes the effectiveness of an adaptive metamaterial design that incorporates a microelectromechanical systems (MEMS) variable capacitor. Applying voltages to the …


Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali Jan 2011

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …


Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana Dec 2010

Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana

UNLV Theses, Dissertations, Professional Papers, and Capstones

The interface formation between two different materials is important in applications for optoelectronic devices. Often, the success or performance of these devices is dependent on the formation of these heterojunctions. In this work, the surface and interfaces in such materials for optoelectronic devices are investigated by a suite of X-ray analytical techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), and X-ray emission (XES) spectroscopies to provide novel insight.

For the group III-nitrides (e.g., AlxGa1-xN) used in many light emitting devices, a significant challenge exists to form an Ohmic contact. The electron affinities and band gaps of GaN and …


Photoelectrochemical Properties Of N, S, And Cl Modified Nano Tio2 Thin Films, Hong Yun, Chang-Jian Lin, Jing Li, Rong-Gui Du Nov 2010

Photoelectrochemical Properties Of N, S, And Cl Modified Nano Tio2 Thin Films, Hong Yun, Chang-Jian Lin, Jing Li, Rong-Gui Du

Journal of Electrochemistry

The nitrogen(N),sulfur(S) and chlorine(Cl) modified nano TiO2 thin films were prepared by adding Ti(O-n-Bu)4 as the precursor into concentrated HNO3,H2SO4 and HCl Solutions,respectively,on different substrates in a sol-gel process.The photoelectrochemical performances of N,S and Cl modified nano TiO2 thin films have been studied by UV-vis(DRS),photocurrent curves,EIS and OCP-time curves.N-modified TiO2 nano films show better surface structure,which helps to improve the quantum efficiency of nano TiO2 thin films.


Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha Oct 2010

Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha

Faculty Publications

Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 µm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 µm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond …


Feasibility Of Manipulating Correlated Color Temperatures With A Phosphor Converted High-Powered Light Emitting Diode White Light Source, Matthew Michael Little Jun 2010

Feasibility Of Manipulating Correlated Color Temperatures With A Phosphor Converted High-Powered Light Emitting Diode White Light Source, Matthew Michael Little

Master's Theses

In this thesis we examine the feasibility of developing a white light source capable of producing colors between 2500 and 7500 Kelvin on the black-body radiator spectrum by simply adjusting amperage to a blue and ultraviolet (UV) light emitting diode (LED). The purpose of a lighting source of this nature is to better replicate daylight inside a building at a given time of day. This study analyzes the proposed light source using a 385 nm UV LED, a 457 nm blue LED, a 479 nm blue LED, a 562 nm peak cerium doped yttrium aluminum garnet (YAG:Ce) phosphor, and a …


Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu Jun 2010

Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu

Master's Theses

Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom …


Optimization Of P3ht-Pcbm Polymer Solar Cells Through Device Simulation And Manufacturing, James Boom Jun 2010

Optimization Of P3ht-Pcbm Polymer Solar Cells Through Device Simulation And Manufacturing, James Boom

Computer Engineering

Given a good model and implementation of that model, computer simulation can be used to reduce the time and material costs of research. To this end I worked with other students to manufacture, test and simulate the single layer P3HT-PCBM solar cell. Using the data collected from this project, future work can then be done with the project's simulator to further optimize these types of solar cell devices.


Production Of Multiwall Carbon Nanotuse For Alcohol Sensor Application., Ebtehal Saleh Alshaqaq May 2010

Production Of Multiwall Carbon Nanotuse For Alcohol Sensor Application., Ebtehal Saleh Alshaqaq

Student Works (2010-2019)

Multiwall carbon nanotube/polyethylene oxide (PEO), multiwall carbon nanoube/polyvinyl alcohol(PVA) and multiwall carbon nanotube/ polyvinyl alcohol(PVA)/zinc oxide(ZnO) have been tested as chemical sensors and detailed study on the effect of different gas concentration and material properties on gas sensitivity is presented. Initial composites were prepared by a simple solution casting and characterized by x-ray diffraction for ZnO, Fourier transform infra-red spectroscopy (FTIR) and scanning electron microscopy (SEM) to demonstrate crystallite size of ZnO, the morphology and surface area respectively. On the other hand, MWCNT/PEO , MWCNT/PVA , MWCNT/PVA/ZnO were prepared with different loading MWCNT and ZnO. The chemical sensing properties of …


Morphological, Structural, And Optical Studies Of Undoped And Doped-Zno Nanostructure., Ramin Yousefi Jan 2010

Morphological, Structural, And Optical Studies Of Undoped And Doped-Zno Nanostructure., Ramin Yousefi

Student Works (2010-2019)

Research concerning one-dimensional nanomaterials has grown tremendously ever since carbon nanotubes were discovered by Iijima (1991), silicon nanowires were grown by Lieber's group (1998), and ZnO nanowires and nanobelts were found by Wang's group from Georgia Tech (Pan et al., 2001). Such researches on one-dimensional structures have been one of the most important branches of science during recent decades. We can now observe the impact of these studies on the technology of one-dimensional materials and also the advanced prospect of developing new technologies. Based on this motivation, this thesis attempts to investigate some unknown properties of ZnO nanostructures as …


Synthesis And Characterization Of Zinc Oxide Nanostructures., Khalifa Said Zahran Al-Azri Jan 2010

Synthesis And Characterization Of Zinc Oxide Nanostructures., Khalifa Said Zahran Al-Azri

Student Works (2010-2019)

The growth mechanism, morphology, structure and optical properties of the ZnO nanostructures grown on bare and gold-coated silicon substrates using carbothermal reaction at atmospheric pressure were investigated under different growth conditions. The ZnO nanostructures formed were studied as a function of substrate location, furnace temperature, Ar gas flow rate, deposition time and ZnO powder to carbon powder mass ratio. The morphology and structure of the samples were characterized using the fieldemission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy(EDX) spectrum, x-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). It was found that in both silicon and gold-coated silicon …


The Thermoluminescence Properties Of Manganese Doped Zns Nanophosphor., Khalid Humaid Zahir Al-Hinai Jan 2010

The Thermoluminescence Properties Of Manganese Doped Zns Nanophosphor., Khalid Humaid Zahir Al-Hinai

Student Works (2010-2019)

The thermoluminescence (TL) properties of Manganese (Mn) doped ZnS nanophosphors were investigated after gamma irradiation at room temperature. The ZnS:Mn nanophosphors were prepared by chemical precipitation method by using Zinc sulfate, Sodium sulfide and Manganese sulfate. 1 mole, 2 moles and 3 moles of Manganese sulfate were used to have different concentrations of Mn in doped ZnS. The formation of the nanophosphors was characterized by high resolution scanning electron microscopy FESEM, XRD and EDX. The obtained products consist of particles with the dimension about 85–150nm. Comparison between ZnS nanophosphors and commercial ZnS powder glow curves was studied. It was observed …


Synthesis And Characterization Of Silicon Oxide And Silicon Carbide Nanostructures., Majid Salim Mohammed Al-Ruqieshi Jan 2010

Synthesis And Characterization Of Silicon Oxide And Silicon Carbide Nanostructures., Majid Salim Mohammed Al-Ruqieshi

Student Works (2010-2019)

Silicon oxide nanostructures have attracted extensive interests in recent years due to their physical and optical properties. SiOx nanostructures are synthesized by catalytic and non-catalytic approaches. With catalytic approach, long and uniform amorphous silicon oxide nanowires, nanofibers (comet and tree like), nanocakes and nanocages were synthesized on Si substrate by carbothermal evaporation reactions of TiO2 at high temperature. The SiOx nanowires were about 13 nm to 243 nm in diameters and 194 nm to several microns in length and the nanofibres with diameter between 8 nm to 30 nm and around 50 nm to 2.5μm in length. The diameter and …