Nanotechnology Fabrication Commons^™

Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin

LSU Doctoral Dissertations

This work studies various emerging reduced dimensional materials for very large-scale integration (VLSI) interconnects. The prime motivation of this work is to find an alternative to the existing Cu-based interconnect for post-CMOS technology nodes with an emphasis on thermal stability. Starting from the material modeling, this work includes material characterization, exploration of electronic properties, vibrational properties and to analyze performance as a VLSI interconnect. Using state of the art density functional theories (DFT) one-dimensional and two-dimensional materials were designed for exploring their electronic structures, transport properties and their circuit behaviors. Primarily carbon nanotube (CNT), graphene and graphene/copper based interconnects were …

Three-Dimensional Memristor Integrated Circuits And Applications, Peng Lin

Doctoral Dissertations

New computing paradigms are highly demanded in the “Big Data” era to efficiently process, store and extract useful information from overwhelmingly rich amount of data. New computing systems based on large scale memristor circuits emerges as a very promising candidate due to its capability to both store and process information, thus eliminating the von Neumann bottleneck in the conventional complementary metal oxide semiconductor (CMOS) based computers. As the lateral scaling of the device geometry approaching its physical limit, three-dimensional stacking of multiple device layers becomes necessary to further increase the packing density. Moreover, innovations in the 3D circuits design can …

Skynet: Memristor-Based 3d Ic For Artificial Neural Networks, Sachin Bhat

Masters Theses

Hardware implementations of artificial neural networks (ANNs) have become feasible due to the advent of persistent 2-terminal devices such as memristor, phase change memory, MTJs, etc. Hybrid memristor crossbar/CMOS systems have been studied extensively and demonstrated experimentally. In these circuits, memristors located at each cross point in a crossbar are, however, stacked on top of CMOS circuits using back end of line processing (BOEL), limiting scaling. Each neuron’s functionality is spread across layers of CMOS and memristor crossbar and thus cannot support the required connectivity to implement large-scale multi-layered ANNs.

This work proposes a new fine-grained 3D integrated circuit technology …

Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami

Physics & Astronomy ETDs

Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm. Semiconductor nanowires can be utilized in many different applications including light-emitting diodes and laser diodes. Higher surface to volume ratio makes nanowire-based structures potential candidates for the next generation of photodetectors, sensors, and solar cells. Core-shell light-emitting diodes based on selective-area growth of gallium nitride (GaN) nanowires provide a wide range of advantages. Among these advantages are access to non-polar m-plane sidewalls, higher active region area compared to conventional planar structures, and reduction of threading …

Investigating The Classical And Non-Classical Mechanical Properties Of Gan Nanowires, Mohammad Reza Zamani Kouhpanji

Electrical and Computer Engineering ETDs

Study and prediction of classical and non-classical mechanical properties of GaN is crucial due to the potential application of GaN nanowires (NWs) in piezoelectric, probe-based nanometrology, and nanolithography areas. GaN is mainly grown on sapphire substrates whose lattice constant and thermal expansion coefficient are significantly different from GaN. These discrepancies cause mechanical defects and high residual stresses and strains in GaN, which reduce its quantum efficiency.

Specifically, for nanoscale applications, the mechanical properties of materials differ significantly compared to the bulk properties due to size-effects. Therefore, it is essential to investigate the mechanical properties of GaN NWs using the non-classical …

Optimization Of Graphene Parameters For The Development Of Supercapacitors, Jessica L. Montgomery

Mechanical Engineering Undergraduate Honors Theses

In the growing market of evolving electronic devices and the sustainable goals of the energy industry, better sources of energy dense storage devices are needed. Carbon based supercapacitors have attracted the attention of research due to the natural properties of high electrical conductivity, chemical and electrochemical stability, and high surface area. The object of this thesis is to expand upon current knowledge of reduced graphene oxide to better understand the effectiveness of the material as electrode in supercapacitors. This thesis will focus on the physical orientation of supercapacitors to further develop a device that will allow a set of supercapacitors …

Optimization Of Reduced Graphene Oxide Deposition For Hydrogen Sensing Technologies, Matthew Pocta

Mechanical Engineering Undergraduate Honors Theses

Graphene is known to be a key material for improving the performance of hydrogen sensors. High electrical conductivity, maximum possible surface area with respect to volume, and high carrier mobility are a few of the properties that make graphene ideal for hydrogen sensing applications. The problem with utilizing graphene is the difficulty in depositing uniform, thin layers onto substrate surfaces. This study examines a new method of optimizing graphene deposition by utilizing an airbrush to deposit both graphene oxide (GO) and reduced graphene oxide (rGO) onto glass substrates. The number of depositions were varied among samples to study the effect …

Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie

Electrical Engineering Undergraduate Honors Theses

In the search for high-efficiency solar cells, In_xGa_1-xN has come under scrutiny as a unique material with high potential. This is due to characteristics including an easily tunable bandgap, large range of potential bandgap values, and high heat resistance. However, one factor limiting its adaptation is the high density of crystal defects. In this thesis, the qualities of InGaN are discussed and the intermediate band solar cell structure is introduced. Additionally, the growth and characterization of two sets of InGaN-based solar cell devices are reported and evaluated.

Compositionally Graded Indium Gallium Nitride Solar Cells, Christopher Matthews

Electrical Engineering Undergraduate Honors Theses

For the past several decades, methods to harvest solar energy have been investigated intensively. A majority of the work done in this field has been on solar cells made with silicon – the most mature semiconductor material. Recent developments in material fabrication and processing techniques have enabled other semiconductor materials to attract practical interest and research effort as well. Indium gallium nitride (InGaN) is one such material. The material properties of InGaN indicate that solar cells made with it have the potential to achieve much higher power density than a standard silicon solar cell. High power density InGaN solar cells …

Characterization Of Coupled Gold Nanoparticles In A Sparsely Populated Square Lattice, Roy Truett French Iii

Graduate Theses and Dissertations

Metal nanoparticles deposited in regular arrays spaced at optical wavelengths support a resonance due to a coherent coupling between localized surface plasmon mode and lattice diffraction allowing for engineering of tunable devices for use in biological sensors, nanoantennae, and enhanced spectroscopy. Techniques such as electron beam lithography, focused ion beam lithography, nanosphere lithography, and nanoimprint lithography are used for fabrication but are limited by cost, device throughput, and small deposition. Polymer soft lithography and continuous dewetting of particles is a potentially viable alternative showing promise in all of those areas. This thesis developed the fabrication of a refined hydrophilic nanoimprinted …

Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo

Theses and Dissertations

This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO₂) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO₃). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film …

Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara

Theses and Dissertations

Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge_1-xSn_x alloy quantum-dots (QDs) are explored for potential visible to …

Design Automation For Carbon Nanotube Circuits Considering Performance And Security Optimization, Lin Liu

Dissertations, Master's Theses and Master's Reports

As prevailing copper interconnect technology advances to its fundamental physical limit, interconnect delay due to ever-increasing wire resistivity has greatly limited the circuit miniaturization. Carbon nanotube (CNT) interconnects have emerged as promising replacement materials for copper interconnects due to their superior conductivity. Buffer insertion for CNT interconnects is capable of improving circuit timing of signal nets with limited buffer deployment. However, due to the imperfection of fabricating long straight CNT, there exist significant unidimensional-spatially correlated variations on the critical CNT geometric parameters such as the diameter and density, which will affect the circuit performance.

This dissertation develops a novel timing …

Coherent/Incoherent Magnetization Dynamics Of Nanomagnetic Devices For Ultra-Low Energy Computing, Md Mamun Al-Rashid

Theses and Dissertations

Nanomagnetic computing devices are inherently nonvolatile and show unique transfer characteristics while their switching energy requirements are on par, if not better than state of the art CMOS based devices. These characteristics make them very attractive for both Boolean and non-Boolean computing applications. Among different strategies employed to switch nanomagnetic computing devices e.g. magnetic field, spin transfer torque, spin orbit torque etc., strain induced switching has been shown to be among the most energy efficient. Strain switched nanomagnetic devices are also amenable for non-Boolean computing applications. Such strain mediated magnetization switching, termed here as “Straintronics”, is implemented by switching the …