Nanotechnology Fabrication Commons^™

Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with …

Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin

LSU Doctoral Dissertations

This work studies various emerging reduced dimensional materials for very large-scale integration (VLSI) interconnects. The prime motivation of this work is to find an alternative to the existing Cu-based interconnect for post-CMOS technology nodes with an emphasis on thermal stability. Starting from the material modeling, this work includes material characterization, exploration of electronic properties, vibrational properties and to analyze performance as a VLSI interconnect. Using state of the art density functional theories (DFT) one-dimensional and two-dimensional materials were designed for exploring their electronic structures, transport properties and their circuit behaviors. Primarily carbon nanotube (CNT), graphene and graphene/copper based interconnects were …

Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami

Physics & Astronomy ETDs

Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm. Semiconductor nanowires can be utilized in many different applications including light-emitting diodes and laser diodes. Higher surface to volume ratio makes nanowire-based structures potential candidates for the next generation of photodetectors, sensors, and solar cells. Core-shell light-emitting diodes based on selective-area growth of gallium nitride (GaN) nanowires provide a wide range of advantages. Among these advantages are access to non-polar m-plane sidewalls, higher active region area compared to conventional planar structures, and reduction of threading …

Carbon Removal And Optoelectronic Property Tuning In Copper Arsenic Sulfide Thin Films Through Ligand Exchange And Alloying, Louis R. Schroeder, Scott Mcclary, Rakesh Agrawal

The Summer Undergraduate Research Fellowship (SURF) Symposium

Solution processed thin film solar cells are attractive alternatives to conventional energy sources due to low waste generation, flexibility in substrate choice, and scalability. The novel semiconductor Cu3AsS4 in the enargite phase has a near ideal band gap of 1.4 eV and has earth abundant constituent elements; yet single-junction solar cells have yielded low efficiencies due to a secondary carbonaceous phase present, among other issues. This carbonaceous phase may be eliminated by exchanging the carbonaceous ligands with molecular metal chalcogenides. To characterize the ligand exchanged particles, UV-Vis-NIR spectroscopy, Raman spectroscopy, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and …

Virtual-Source Based Accurate Model For Predicting Noise Behavior At High Frequencies In Nanoscale Pmos Soi Transistors, Vaibhav R. Ramachandran, Saeed Mohammadi, Sutton Hathorn

The Summer Undergraduate Research Fellowship (SURF) Symposium

Complementary Metal Oxide Semiconductor (CMOS) technology at the nanometre scale is an excellent platform to implement monolithically integratedsystems because of the low cost of manufacturing and ease of integration. Newly developed CMOS Silicon on Insulator (SOI) transistors that are currentlydeveloped are suitable for use in radio frequency circuits. They find applications in many areas such as 5G telecommunication systems, high speed Wi-Fi andairport body-scanners. Unfortunately, the models for CMOS SOI transistors that are currently used in these circuits are inaccurate because of their complexity.The models currently used require the optimization of more than 200 variables. This paper aims to accurately …

Improving Methods Of Doping On Black Phosphorus, Yuqin Duan, Adam Charnas, Jingkai Qin, Peide Ye

The Summer Undergraduate Research Fellowship (SURF) Symposium

Black phosphorus (BP) is a 2D semiconducting material with high carrier mobility. It is usually p-type due to oxidation states near its valence band. Although achieved through other growth methods, n-type doping has not yet been accomplished through the modern chemical vapor transport (CVT) growth method. To address this issue, small amounts of tellurium were added to Red Phosphorus to act as a dopant during the CVT growth process in addition to tin(Sn) and tin(IV) iodide, which facilitate growth. The chemicals are heated up to 600°C and precisely cooled in a 21-hour process, during which BP crystals should form. After …

Laser-Assisted Metal Organic Chemical Vapor Deposition Of Gallium Nitride, Hossein Rabiee Golgir

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Due to its unique properties, gallium nitride is of great interest in industry applications including optoelectronics (LEDs, diode laser, detector), high power electronics, and RF and wirelss communication devices. The inherent shortcomings of current conventional deposition methods and the ever-increasing demand for gallium nitride urge extended efforts for further enhancement of gallium nitride deposition. The processes of conventional methods for gallium nitride deposition, which rely on thermal heating, are inefficient energy coupling routes to drive gas reactions. A high deposition temperature (1000-1100 °C) is generally required to overcome the energy barriers to precursor adsorption and surface adatom migration. However, there …

Investigating The Classical And Non-Classical Mechanical Properties Of Gan Nanowires, Mohammad Reza Zamani Kouhpanji

Electrical and Computer Engineering ETDs

Study and prediction of classical and non-classical mechanical properties of GaN is crucial due to the potential application of GaN nanowires (NWs) in piezoelectric, probe-based nanometrology, and nanolithography areas. GaN is mainly grown on sapphire substrates whose lattice constant and thermal expansion coefficient are significantly different from GaN. These discrepancies cause mechanical defects and high residual stresses and strains in GaN, which reduce its quantum efficiency.

Specifically, for nanoscale applications, the mechanical properties of materials differ significantly compared to the bulk properties due to size-effects. Therefore, it is essential to investigate the mechanical properties of GaN NWs using the non-classical …

Studies In Mesoscopics And Quantum Microscopies, Zhenghao Ding, Gabriel C. Spalding

Honors Projects

This thesis begins with a foundational section on quantum optics. The single-photon detectors used in the first chapter were obtained through the Advanced Laboratory Physics Association (ALPhA), which brokered reduced cost for educational use, and the aim of the single-photon work presented in Chapter 1 is to develop modules for use in Illinois Wesleyan's instructional labs beyond the first year of university. Along with the American Association of Physics Teachers, ALPhA encourages capstone-level work, such as Chapter 1 of this honors thesis, which is explicitly designed to play the role of passing on, to a next generation of physics majors, …

Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie

Electrical Engineering Undergraduate Honors Theses

In the search for high-efficiency solar cells, In_xGa_1-xN has come under scrutiny as a unique material with high potential. This is due to characteristics including an easily tunable bandgap, large range of potential bandgap values, and high heat resistance. However, one factor limiting its adaptation is the high density of crystal defects. In this thesis, the qualities of InGaN are discussed and the intermediate band solar cell structure is introduced. Additionally, the growth and characterization of two sets of InGaN-based solar cell devices are reported and evaluated.

Compositionally Graded Indium Gallium Nitride Solar Cells, Christopher Matthews

Electrical Engineering Undergraduate Honors Theses

For the past several decades, methods to harvest solar energy have been investigated intensively. A majority of the work done in this field has been on solar cells made with silicon – the most mature semiconductor material. Recent developments in material fabrication and processing techniques have enabled other semiconductor materials to attract practical interest and research effort as well. Indium gallium nitride (InGaN) is one such material. The material properties of InGaN indicate that solar cells made with it have the potential to achieve much higher power density than a standard silicon solar cell. High power density InGaN solar cells …

Characterization Of Coupled Gold Nanoparticles In A Sparsely Populated Square Lattice, Roy Truett French Iii

Graduate Theses and Dissertations

Metal nanoparticles deposited in regular arrays spaced at optical wavelengths support a resonance due to a coherent coupling between localized surface plasmon mode and lattice diffraction allowing for engineering of tunable devices for use in biological sensors, nanoantennae, and enhanced spectroscopy. Techniques such as electron beam lithography, focused ion beam lithography, nanosphere lithography, and nanoimprint lithography are used for fabrication but are limited by cost, device throughput, and small deposition. Polymer soft lithography and continuous dewetting of particles is a potentially viable alternative showing promise in all of those areas. This thesis developed the fabrication of a refined hydrophilic nanoimprinted …

Optimization Of Reduced Graphene Oxide Deposition For Hydrogen Sensing Technologies, Matthew Pocta

Mechanical Engineering Undergraduate Honors Theses

Graphene is known to be a key material for improving the performance of hydrogen sensors. High electrical conductivity, maximum possible surface area with respect to volume, and high carrier mobility are a few of the properties that make graphene ideal for hydrogen sensing applications. The problem with utilizing graphene is the difficulty in depositing uniform, thin layers onto substrate surfaces. This study examines a new method of optimizing graphene deposition by utilizing an airbrush to deposit both graphene oxide (GO) and reduced graphene oxide (rGO) onto glass substrates. The number of depositions were varied among samples to study the effect …

Optimization Of Graphene Parameters For The Development Of Supercapacitors, Jessica L. Montgomery

Mechanical Engineering Undergraduate Honors Theses

In the growing market of evolving electronic devices and the sustainable goals of the energy industry, better sources of energy dense storage devices are needed. Carbon based supercapacitors have attracted the attention of research due to the natural properties of high electrical conductivity, chemical and electrochemical stability, and high surface area. The object of this thesis is to expand upon current knowledge of reduced graphene oxide to better understand the effectiveness of the material as electrode in supercapacitors. This thesis will focus on the physical orientation of supercapacitors to further develop a device that will allow a set of supercapacitors …

Environmentally Friendly Synthesis Of Transition Metalorganic Hybrid Nanocomposites, Aubrey N. Penn

Masters Theses & Specialist Projects

Research on metal nanoparticles (MNPs) synthesis and their applications for optoelectronic devices has been a recent interest in the fields of nanoscience and nanotechnology Photovoltaics are one of such systems in which MNPs have shown to be quite useful, due to unique physical, optical, magnetic, and electronic properties, including the metal nanoparticles synthesized in this research.

Owing to the challenges with the most common physical and chemical methods of preparing MNPs, including the use of high temperatures, toxic reducing agents, and environmentally hazardous organic solvents, there is a critical need for a benign synthesis procedure for MNPs. In this work, …

Coherent/Incoherent Magnetization Dynamics Of Nanomagnetic Devices For Ultra-Low Energy Computing, Md Mamun Al-Rashid

Theses and Dissertations

Nanomagnetic computing devices are inherently nonvolatile and show unique transfer characteristics while their switching energy requirements are on par, if not better than state of the art CMOS based devices. These characteristics make them very attractive for both Boolean and non-Boolean computing applications. Among different strategies employed to switch nanomagnetic computing devices e.g. magnetic field, spin transfer torque, spin orbit torque etc., strain induced switching has been shown to be among the most energy efficient. Strain switched nanomagnetic devices are also amenable for non-Boolean computing applications. Such strain mediated magnetization switching, termed here as “Straintronics”, is implemented by switching the …

Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara

Theses and Dissertations

Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge_1-xSn_x alloy quantum-dots (QDs) are explored for potential visible to …

Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo

Theses and Dissertations

This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO₂) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO₃). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film …

Design Automation For Carbon Nanotube Circuits Considering Performance And Security Optimization, Lin Liu

Dissertations, Master's Theses and Master's Reports

As prevailing copper interconnect technology advances to its fundamental physical limit, interconnect delay due to ever-increasing wire resistivity has greatly limited the circuit miniaturization. Carbon nanotube (CNT) interconnects have emerged as promising replacement materials for copper interconnects due to their superior conductivity. Buffer insertion for CNT interconnects is capable of improving circuit timing of signal nets with limited buffer deployment. However, due to the imperfection of fabricating long straight CNT, there exist significant unidimensional-spatially correlated variations on the critical CNT geometric parameters such as the diameter and density, which will affect the circuit performance.

This dissertation develops a novel timing …