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Electronic Devices and Semiconductor Manufacturing Commons™
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Articles 31 - 40 of 40
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Integration Of Artificial Intelligence With A Customized Four-Probe Station For I-V Characteristic Classification And Prediction, Sameh O. Abdellatif, Ahmed Ghanem, Ahmmat Abdel Whahid, Amr Hatem, Belal Ahmed
Integration Of Artificial Intelligence With A Customized Four-Probe Station For I-V Characteristic Classification And Prediction, Sameh O. Abdellatif, Ahmed Ghanem, Ahmmat Abdel Whahid, Amr Hatem, Belal Ahmed
Electrical Engineering
The incorporation of Artificial Intelligence (AI) is pivotal in automating intricate technical tasks, significantly enhancing accuracy and efficiency while alleviating the burdens of repetitive monitoring traditionally borne by technicians. This study focuses on developing a customized four-probe station integrated with sophisticated AI models aimed at classifying current–voltage () characteristics and extracting essential parameters. Our methodology encompasses the fabrication of precision-engineered gold-plated probes, meticulously assembled with a three-dimensional (3D) moving head to ensure optimal contact and measurement fidelity across a variety of electronic and optoelectronic devices. Data acquisition is executed via a source meter unit, followed by rigorous post-processing utilizing advanced …
Efficient Operation Of Direct Coupled Solar Home Pv System: A Case Of Solar Home Pv System Installed In Dodoma, Tanzania, Sarah P. Ayeng'o
Efficient Operation Of Direct Coupled Solar Home Pv System: A Case Of Solar Home Pv System Installed In Dodoma, Tanzania, Sarah P. Ayeng'o
Tanzania Journal of Engineering and Technology (TJET)
Direct coupled Photovoltaic (PV) system is a common topology among most of the off-grid communities in the world. This topology has less components hence resulting in low investment costs. However, it suffers much losses when battery operating voltage is far from maximum power point voltage of PV modules. This scenario can be attributed by different factors such as; variation in solar radiation, load profile and temperature. Efficient operation of these systems is required in order to reduce losses. Usually in direct coupled system, PV modules are connected in parallel with batteries through a charge controller hence making PV output to …
Photonic Crystal Devices For Chip Scale Sensing Systems, Yudong Chen
Photonic Crystal Devices For Chip Scale Sensing Systems, Yudong Chen
Electrical Engineering Dissertations - Archive
This thesis investigates the design and integration of photonic crystal (PC) structures for compact, high-performance optical platforms, with a focus on applications in gas sensing, on-chip lasers, and flat optics. Chapter 1 introduces the fundamental principles of PC design and simulation, highlighting their potential to replace bulky components in micro-gas chromatography (µGC) systems through miniaturization and integration. Chapter 2 explores PC-based nanobeam lasers, including the Lambda-Scale Embedded Active-Region Photonic Crystal (LEAP) laser, which demonstrates strong optical confinement and energy-efficient operation, with energy consumption as low as 8 fJ/bit. These laser designs are evaluated for their suitability in low-power, high-speed on-chip …
Stack Bonding In Pentacene And Its Derivatives, Craig A. Bayse
Stack Bonding In Pentacene And Its Derivatives, Craig A. Bayse
Chemistry & Biochemistry Faculty Publications
Understanding the nature of π-stacking interactions is important to molecular recognition, self-assembly, and organic semiconductors. The stack bonding order (SBO) model of π-stacking has shown that the conformations of dimers occur when the combinations of monomer MOs are overall stack bonding in character. DFT calculations show that minima found on the potential energy surface for the π-stacked dimers of pentacene and perfluoropentacene occur when the dimer MOs are constructed from combinations of monomer MOs with an allowed SBO. An ex-amination of the MOs of π-stacked dimers extracted from X-ray structures of alkynyl derivatives like TIPS-pentacene pack at one or more …
Surface Morphology And Moisture Adsorption/Desorption Characteristics Of Hybrid-Dielectric Moisture Sensors, Ronak Ali
Theses and Dissertations--Electrical and Computer Engineering
Relative humidity sensors are used for high-humidity measurement. Moisture sensors, or dew point sensors are used for low-humidity measurement (< 1 ppmv). The dissertation contains two parts of studies. In the first part, the effect of surface morphology on the response speed of moisture sensors is studied. Moisture sensors using α-Al2O3 films as porous dielectric materials deposited by anodic spark deposition are studied. In this part of the study, a variety of small pores have been studied to investigate the response speed of moisture sensors. Three different surface morphologies have been studied using scanning electron microscopy. One …
Lifecycle Carbon Footprint And Sustainability Evaluation Of Dram-Based Processing In Memory Computing Architectures, Samrat Pravin Patel
Lifecycle Carbon Footprint And Sustainability Evaluation Of Dram-Based Processing In Memory Computing Architectures, Samrat Pravin Patel
Theses and Dissertations--Electrical and Computer Engineering
The use of computing technologies has significantly enhanced several aspects of our day-to-day lives. But it has still revealed significant environmental concerns, primarily related to greenhouse gas emissions and energy consumption. Initially, the primary environmental problems associated with computing were energy consumption during device operation. However, with the rapid advancement of technology and increasing computational demands, attention has shifted towards the embodied carbon footprint. This term refers to the total greenhouse gas emissions throughout a product’s lifecycle from the extraction of raw materials to end-of-life processing. It has become increasingly significant in the context of manufacturing integrated circuits (ICs), such …
Advancing 4h-Silicon Carbide Power Mosfets Through Three-Dimensional Technology Computer Aided Design Optimization, Skylar A. Deboer
Advancing 4h-Silicon Carbide Power Mosfets Through Three-Dimensional Technology Computer Aided Design Optimization, Skylar A. Deboer
Electronic Theses & Dissertations (2024 - present)
This research contributes to the advancement of 1.2 kV 4H-Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) through the development and implementation of sophisticated three-dimensional Technology Computer-Aided Design (3D TCAD) methodologies. These advanced simulation techniques enable comprehensive evaluation of innovative unit cell architectures that remain inaccessible to conventional two-dimensional (2D) TCAD approaches. By leveraging these 3D simulation capabilities, this work facilitates significant improvements in both the performance and reliability of next-generation wide-bandgap power devices.
Power devices convert electrical energy between different forms throughout the power grid making them essential in applications ranging from personal electronics, electric vehicles, renewable energy systems, industrial …
The Impact Of Chromium Ion Implantation On Ald Lead Chalcogenide Thin Films, Haifeng Cong, Charlotte Poterie, Jean Francois Barbot, Helmut Baumgart
The Impact Of Chromium Ion Implantation On Ald Lead Chalcogenide Thin Films, Haifeng Cong, Charlotte Poterie, Jean Francois Barbot, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
Inherently the synthesis of semiconducting materials by Atomic Layer Deposition ALD produces only intrinsic undoped films which require the introduction of small amounts of impurities for doping to change them into extrinsic semiconductors. Apart from various in-situ diffusion doping techniques like delta doping during the ALD process, post deposition doping by ion implantation affords the best control of dose and doping profile. The present study investigates the impact of 180 keV Cr+ ion implantation on the properties of semiconducting ALD lead chalcogenide thin films to improve their thermoelectric figure of merit. The implantation was accomplished with 180 keV Chromium …
Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns
Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns
Electronic Theses & Dissertations (2024 - present)
This dissertation discloses the physics, fabrication, and characterization of high-performance scintillator detectors based on epitaxial InAs quantum dots (QDs) in GaAs. The detector crystals grown include monolithically integrated In0.35GaAs photodetectors with Al0.92-0.6In0.03-0.35Ga0.05As metamorphic buffer layers (MBL). A device fabrication process was developed for the lithographic patterning, chemical etching, contact metallization and readout integration of materials grown by means of molecular beam epitaxy (MBE) on 3-inch GaAs (001) wafers. Low capacitance integration with readout electronics was achieved through wire bonds to custom printed circuit boards (PCBs) with commercial components.
The relationship between device …
Old, Flat, And Slow: Interior Greenland Snow And Ice Dynamics Revealed With Gnss, Derek James Pickell
Old, Flat, And Slow: Interior Greenland Snow And Ice Dynamics Revealed With Gnss, Derek James Pickell
Dartmouth College Ph.D Dissertations
The interior dry snow zone region of the Greenland Ice Sheet can no longer be confidently considered a reliably melt-free region, yet our ability to investigate and quantify the dynamic nature of this landscape is hindered by its remoteness. To overcome this challenge, this work describes a novel, low-cost, low-power GNSS (positioning) instrument that enables simultaneous measurements of (1) ice accumulation/ablation changes and (2) 3D ice flow. Deployed in a dense array, these GNSS instruments achieve similar performance to scientific-grade, commercial options (cm- to mm- precision), yet operate at < 60% of the power and < 34% of the hardware cost. Over a three year campaign, we analyze spatial and temporal patterns of accumulation in this region, using a technique called GNSS interferometric reflectometry (GNSS-IR). Observations with this technique show low bias and high precision relative to a validation study (-2.1 ± 2.9 cm), while we also demonstrate for the first time how GNSS-IR can reveal cm- to m- scale surface roughness, a critical yet often neglected measurement due to longstanding observational challenges. Patterns of accumulation show a spatial dependence linked to surface slope (~+0.7 mm w.e. km^-1 westward away from the divide) while surface roughness has a temporal dependence likely driven by wintertime high winds. Next, we combine GNSS-IR surface heights with the geodetic position time series of the antenna to derive surface elevation changes, which are compared to coincident ICESat-2 laser altimetry elevations. Observations of the surface show a millimeter-level relative bias and cm-level precision (-0.9 ± 3.8 cm) compared with the satellite altimeter, demonstrating for the first time that this technique is a viable ground-truthing method, while ICESat-2 performance has continued to exceed mission performance requirements. Finally, we examine station positioning through time to show a sensitivity to dynamic ice thinning and firn densification, two parameters than cannot be finely observed with space-based methods in this region. Together, these results provide the first ground‑based, high‑resolution picture of interior ice‑sheet change—capturing accumulation, roughness, surface elevation, and strain in one unified dataset. Our approach dramatically lowers logistical barriers, opening the interior of Greenland (and other remote regions) to sustained, quantitative monitoring at unprecedented spatiotemporal resolution.