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Electronic Devices and Semiconductor Manufacturing Commons™
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Articles 31 - 38 of 38
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang
Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang
Dissertations, Master's Theses and Master's Reports
Solar photovoltaic (PV) devices harvest energy from solar radiation and convert it to electricity. PV technologies, as an alternative to traditional fossil fuels, use clean and renewable energy while minimizing pollution. For decades researchers have been developing thin film solar cells as an important alternatives to the relatively expensive bulk crystal solar cell technology. Among those, hydrogenated amorphous silicon (a-Si:H) solar cells prevails for good efficiency, non-toxic and materially abundant nature. However, a-Si:H thickness must be minimized to prevent light induced degradation, so optical enhancement is necessary. Light manipulation has to be applied and carefully engineered to trap light within …
Modelling Of The Nanowire Cds-Cdte Device Design For Enhanced Quantum Efficiency In Window-Absorber Type Solar Cells, Rasika Ganvir
Modelling Of The Nanowire Cds-Cdte Device Design For Enhanced Quantum Efficiency In Window-Absorber Type Solar Cells, Rasika Ganvir
Theses and Dissertations--Electrical and Computer Engineering
Numerical simulations of current-voltage characteristics of nanowire CdS/CdTe solar cells are performed as a function of temperature using SCAPS-1D. This research compares the experimental current-voltage (I-V) characteristics with the numerical (I-V) simulations obtained from SCAPS-1D at various temperatures. Various device parameters were studied which can affect the efficiency of the nanowire-CdS/CdTe solar cell. It was observed that the present simulated model explains the important effects of these solar cell devices, such as the crossover and the rollover effect. It was shown that the removal of defect in i-SnO2 is responsible for producing the crossover effect. In the past, the rollover …
Electric Field Controlled Strain Induced Switching Of Magnetization Of Galfenol Nanomagnets In Magneto-Electrically Coupled Multiferroic Stack, Hasnain Ahmad
Theses and Dissertations
The ability to control the bi-stable magnetization states of shape anisotropic single domain nanomagnets has enormous potential for spawning non-volatile and energy-efficient computing and signal processing systems. One of the most energy efficient switching methods is to adopt a system of a 2-phase multiferroic nanomagnet, where a voltage applied on the piezoelectric layer generates a strain in it and the strain is elastically transferred to the magnetostrictive nanomagnet which rotates the magnetization states of the nanomagnet at room temperature via the converse magnet-electric effect. Recently, it has been demonstrated that the magnetization of a Co nanomagnet can be switched between …
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …
Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz
Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz
Theses and Dissertations
InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1−xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving …
Hybrid Straintronics-Spintronics: Energy-Efficient Non-Volatile Devices For Boolean And Non-Boolean Computation, Ayan K. Biswas
Hybrid Straintronics-Spintronics: Energy-Efficient Non-Volatile Devices For Boolean And Non-Boolean Computation, Ayan K. Biswas
Theses and Dissertations
Research in future generation computing is focused on reducing energy dissipation while maintaining the switching speed in a binary operation to continue the current trend of increasing transistor-density according to Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, based on switching bistable magnetization of single domain shape-anisotropic nanomagnets, has the potential to achieve ultralow energy dissipation due to the fact that no charge motion is directly involved in switching. However, switching of magnetization has not been any less dissipative than switching transistors because most magnet switching schemes involve generating a current to produce a magnetic field, or spin transfer …
Wide-Band Gap Devices For Dc Breaker Applications, Olukayode O. Sodipe
Wide-Band Gap Devices For Dc Breaker Applications, Olukayode O. Sodipe
Master's Theses
With the increasing interest in wide-band gap devices, their potential benefits in power applications have been studied and explored with numerous studies conducted for both SiC and GaN devices. This thesis investigates the use of wide-band gap devices as the switching element in a semiconductor DC breaker. It involves the design of an efficient semiconductor DC breaker, its simulation in SPICE, construction of a hardware prototype and the comparative study of SiC and Si versions of the aforementioned breaker. The results obtained from the experiments conducted in the process of concluding this thesis show that the SiC version of the …
Scalable Integrated Circuit Simulation Algorithms For Energy-Efficient Teraflop Heterogeneous Parallel Computing Platforms, Lengfei Han
Dissertations, Master's Theses and Master's Reports
Integrated circuit technology has gone through several decades of aggressive scaling.It is increasingly challenging to analyze growing design complexity. Post-layout SPICE simulation can be computationally prohibitive due to the huge amount of parasitic elements, which can easily boost the computation and memory cost. As the decrease in device size, the circuits become more vulnerable to process variations. Designers need to statistically simulate the probability that a circuit does not meet the performance metric, which requires millions times of simulations to capture rare failure events.
Recent, multiprocessors with heterogeneous architecture have emerged as mainstream computing platforms. The heterogeneous computing platform can …