Electronic Devices and Semiconductor Manufacturing Commons^™

Iii-V Bismide Optoelectronic Devices, Dongsheng Fan

Graduate Theses and Dissertations

This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 µm …

Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods

Graduate Theses and Dissertations

The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance.

In this work, a compact model referenced at 300K was developed to …

Novel Test Fixture For Characterizing Microcontacts: Performance And Reliability, Benjamin F. Toler

Theses and Dissertations

Engineers have attempted to improve reliability and lifecycle performance using novel micro-contact metals, unique mechanical designs and packaging. Contact resistance can evolve over the lifetime of the micro-switch by increasing until failure. This work shows the fabrication of micro-contact support structures and test fixture which allow for micro-contact testing, with an emphasis on the fixture's design to allow the determination and analysis of the appropriate failure mode. The other effort of this investigation is the development of a micro-contact test fixture which can measure contact force and resistance directly and perform initial micro-contact characterization, and two forms of lifecycle testing …

Digitally Programmable Rf Mems Filters With Mechanically Coupled Resonators, Hengky Chandrahalim, Sunil Ashok Bhave

AFIT Patents

A digitally-tunable RF MEMS filter includes a substrate and a plurality of mechanically coupled resonators, wherein a first and a last resonator of the plurality of mechanically coupled resonators are configured to be electrostatically transduced. One or more of the plurality of mechanically coupled resonators are configured to be biased relative to the substrate such that the one or more biased resonators may be brought substantially in contact with the substrate. In a method of digitally tuning an RF MEMS filter having a mechanically coupled resonator array, a DC bias voltage is applied to at least a first resonator and …

Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.

In this thesis, the DC, …

A 40 Ghz Power Amplifier Using A Low Cost High Volume 0.15 Um Optical Lithography Phemt Process, Kenneth W. Mays

Dissertations and Theses

The demand for higher frequency applications is largely driven by bandwidth. The evolution of circuits in the microwave and millimeter frequency ranges always demands higher performance and lower cost as the technology and specification requirements evolve. Thus the development of new processes addressing higher frequencies and bandwidth requirements is essential to the growth of any semiconductor company participating in these markets. There exist processes which can perform in the higher frequency design space from a technical perspective. However, a cost effective solution must complement the technical merits for deployment. Thus a new 0.15 um optical lithography pHEMT process was developed …

Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett

Electrical and Computer Engineering Publications

This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-matched semiconductor structures have resulted in the deployment of non-traditional approaches such as strain compensation to extend wavelength in intersubband devices, where strain limits are related to misfit dislocation generation. Strain and piezoelectric effects have been studied and verified using select photonic device designs. Metrics under this effort also included dipole strength, oscillator strength, and offset of energy transitions, which are strongly correlated with induced piezoelectric …

Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham

Electrical and Computer Engineering Publications

The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2 degrees offset toward 2-1-1 surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2 degrees offset toward 2-1-1 surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions …

Materials Selection And Processing Techniques For Small Spacecraft Solar Cell Arrays, Naseem M. Torabi

Theses and Dissertations--Electrical and Computer Engineering

Body mounted germanium substrate solar cell arrays form the faces of many small satellite designs to provide the primary power source on orbit. High efficiency solar cells are made affordable for university satellite programs as triangular devices trimmed from wafer scale solar cells. The smaller cells allow array designs to pack tightly around antenna mounts and payload instruments, giving the board design flexibility. One objective of this work is to investigate the reliability of solar cells attached to FR-4 printed circuit boards. FR-4 circuit boards have significantly higher thermal expansion coefficients and lower thermal conductivities than germanium. This thermal expansion …

Study Of N Incorporation In Insb On Gaas By Molecular Beam Epitaxy For Long Wavelength Infrared Devices, Nimai Chand Patra

Dissertations

The distinguishing features of dilute nitride III-V semiconductors lie in the large simultaneous reduction in the band gap and lattice parameter when N is incorporated in small amounts in an otherwise wide band gap III-V material. In particular, N incorporation in InSb is attracting great attention due to its potential applications in the long wavelength infrared (LWIR) applications. However, the relatively small atomic size of N with respect to Sb makes the growth of good quality InSbN layers challenging with effective N incorporation. In this dissertation we present a correlation of the molecular beam epitaxial growth parameters on the type …

Investigation Of Cds Nanowires And Planar Films For Enhanced Performance As Window Layers In Cds-Cdte Solar Cell Devices, Jianhao Chen

Theses and Dissertations--Electrical and Computer Engineering

Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power conversion efficiency and low manufacturing cost. In this work, CdS/CdTe solar cells with a varying set of processing parameters and device designs were fabricated and characterized for comparative evaluation. Studies were undertaken to elucidate the effects of (i) each step in fabrication and (ii) parameters like thickness, sheet resistance, light absorptivity solution concentration, inert gas pressure etc. Best results were obtained when the thickness of CdS planar film for the window layer was in the …

Copper Indium Diselenide Nanowire Arrays In Alumina Membranes Deposited On Molybdenum And Other Back Contact Substrates, Bhavananda R. Nadimpally

Theses and Dissertations--Electrical and Computer Engineering

Heterojunctions of CuInSe₂ (CIS) nanowires with cadmium sulfide (CdS) were fabricated demonstrating for the first time, vertically aligned nanowires of CIS in the conventional Mo/CIS/CdS stack. These devices were studied for their material and electrical characteristics to provide a better understanding of the transport phenomena governing the operation of heterojunctions involving CIS nanowires. Removal of several key bottlenecks was crucial in achieving this. For example, it was found that to fabricate alumina membranes on molybdenum substrates, a thin interlayer of tungsten had to be inserted. A qualitative model was proposed to explain the difficulty in fabricating anodized aluminum oxide …

Multi-Mode Self-Referencing Surface Plasmon Resonance Sensors, Jing Guo

Theses and Dissertations--Electrical and Computer Engineering

Surface-plasmon-resonance (SPR) sensors are widely used in biological, chemical, medical, and environmental sensing. This dissertation describes the design and development of dual-mode, self-referencing SPR sensors supporting two surface-plasmon modes (long- and short-range) which can differentiate surface binding interactions from bulk index changes at a single sensing location. Dual-mode SPR sensors have been optimized for surface limit of detection (LOD). In a wavelength interrogated optical setup, both surface plasmons are simultaneously excited at the same location and incident angle but at different wavelengths. To improve the sensor performance, a new approach to dual-mode SPR sensing is presented that offers improved differentiation …

Wireless Sensor Networks And The Internet Of Things, Yingtao Jiang, Lei Zhang, Ling Wang

Electrical & Computer Engineering Faculty Research

It is estimated that mobile internet devices that can act as sensors will outnumber humans this year (2013), and by 2015, there will be about 15 billion internet-connected devices. Related applications are thriving in commercial, civic, and scientific operations that involve sensors, web, and services, leading by both academic societies and industry companies. It is commonly accepted that the next generation of internet is becoming the “Internet of Things (IoT)” which is a worldwide network of interconnected objects and their virtual representations uniquely addressable based on standard communication protocols. Identified by a unique address, any object including computers, mobile phones, …

Estimation Of Performance Indices For The Planning Of Sustainable Transportation Systems, Alexander Paz, Pankaj Maheshwari

Electrical & Computer Engineering Faculty Research

In the context of sustainable transportation systems, previous studies have either focused only on the transportation systemor have not used a methodology that enables the treatment of incomplete, vague, and qualitative information associated with the available data. This study proposes a system of systems (SOS) and a fuzzy logic modeling approach. The SOS includes the Transportation, Activity, and Environment systems. The fuzzy logic modeling approach enables the treatment of the vagueness associated with some of the relevant data. Performance Indices (PIs) are computed for each system using a number of performance measures. The PIs illustrate the aggregated performance of each …