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2003

Pressure transducers

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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon Mar 2003

Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon

Theses and Dissertations

The effects of ionizing and non ionizing radiation on the resistivity of silicon based, piezoresistive bulk micro-machined chips from pressure transducers were examined. Standard current-voltage (I-V) measurements were taken in-situ and post-irradiation during isothermal annealing at room temperature. One group of chips was irradiated to a maximum total gamma dose of lMrad(Si) in the 11,000 Ci (60) Co gamma cell at Ohio State University. The second group of chips was irradiated at the Ohio State University Research Reactor facility to a maximum total neutron dose of 4 Mrad(Si) using beam port Hi. The resistivity was shown to decrease during gamma …