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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Electronic And Magnetic Properties Of Two-Dimensional Nanomaterials Beyond Graphene And Their Gas Sensing Applications: Silicene, Germanene, And Boron Carbide, Sadegh Mehdi Aghaei
Electronic And Magnetic Properties Of Two-Dimensional Nanomaterials Beyond Graphene And Their Gas Sensing Applications: Silicene, Germanene, And Boron Carbide, Sadegh Mehdi Aghaei
FIU Electronic Theses and Dissertations
The popularity of graphene owing to its unique properties has triggered huge interest in other two-dimensional (2D) nanomaterials. Among them, silicene shows considerable promise for electronic devices due to the expected compatibility with silicon electronics. However, the high-end potential application of silicene in electronic devices is limited owing to the lack of an energy band gap. Hence, the principal objective of this research is to tune the electronic and magnetic properties of silicene related nanomaterials through first-principles models.
I first explored the impact of edge functionalization and doping on the stabilities, electronic, and magnetic properties of silicene nanoribbons (SiNRs) and …
Sonochemical Synthesis Of Zinc Oxide Nanostructures For Sensing And Energy Harvesting, Phani Kiran Vabbina
Sonochemical Synthesis Of Zinc Oxide Nanostructures For Sensing And Energy Harvesting, Phani Kiran Vabbina
FIU Electronic Theses and Dissertations
Semiconductor nanostructures have attracted considerable research interest due to their unique physical and chemical properties at nanoscale which open new frontiers for applications in electronics and sensing. Zinc oxide nanostructures with a wide range of applications, especially in optoelectronic devices and bio sensing, have been the focus of research over the past few decades. However ZnO nanostructures have failed to penetrate the market as they were expected to, a few years ago. The two main reasons widely recognized as bottleneck for ZnO nanostructures are (1) Synthesis technique which is fast, economical, and environmentally benign which would allow the growth on …
Advanced Graphene Microelectronic Devices, Chowdhury G. Al-Amin
Advanced Graphene Microelectronic Devices, Chowdhury G. Al-Amin
FIU Electronic Theses and Dissertations
The outstanding electrical and material properties of Graphene have made it a promising material for several fields of analog applications, though its zero bandgap precludes its application in digital and logic devices. With its remarkably high electron mobility at room temperature, Graphene also has strong potential for terahertz (THz) plasmonic devices. However there still are challenges to be solved to realize Graphene’s full potential for practical applications.
In this dissertation, we investigate solutions for some of these challenges. First, to reduce the access resistances which significantly reduces the radio frequency (RF) performance of Graphene field effect transistors (GFETs), a novel …
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Birck and NCN Publications
Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …
Growth And Characterization Of Silicon Carbide Thin Films Using A Nontraditional Hollow Cathode Sputtering Technique, James Huguenin-Love
Growth And Characterization Of Silicon Carbide Thin Films Using A Nontraditional Hollow Cathode Sputtering Technique, James Huguenin-Love
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC.
Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed …