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Articles 31 - 34 of 34
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Negative Conductance Load Modulation Rf Power Amplifier, Cody R. Neslen
Negative Conductance Load Modulation Rf Power Amplifier, Cody R. Neslen
Master's Theses
The number of mobile wireless devices on the market has increased substantially over the last decade. The frequency spectrum has become crowded due to the number of devices demanding radio traffic and new modulation schemes have been developed to accommodate the number of users. These new modulation schemes have caused very poor efficiencies in power amplifiers for wireless transmission systems due to high peak-to-average power ratios (PAPR). This thesis first presents the issue with classical power amplifiers in modern modulation systems. A brief overview of current attempts to mitigate this issue is provided. A new RF power amplifier topology is …
Advanced Thermosonic Wire Bonding Using High Frequency Ultrasonic Power: Optimization, Bondability, And Reliability, Minh-Nhat Ba Le
Advanced Thermosonic Wire Bonding Using High Frequency Ultrasonic Power: Optimization, Bondability, And Reliability, Minh-Nhat Ba Le
Master's Theses
Gold wire bonding typically uses 60 KHz ultrasonic frequency. Studies have been reported that increasing ultrasonic frequency from 60KHz to 120KHz can decrease bonding time, lower bonding temperature, and/or improve the bondability of Au metalized organic substrates. This thesis presents a systematic study of the effects of 120 KHz ultrasonic frequency on the reliability of fine pitch gold wire bonding. Two wire sizes, 25.4 and 17.8 μm in diameter (1.0 and 0.7 mil, respectively) were used. The gold wires were bonded to metalized pads over organic substrates with five different metallization. The studies were carried out using a thermosonic ball …
Analysis & Design Of Improved Multiphase Interleaving Dc-Dc Converter With Input-Output Bypass Capacitor, Rudi Rudianto
Analysis & Design Of Improved Multiphase Interleaving Dc-Dc Converter With Input-Output Bypass Capacitor, Rudi Rudianto
Master's Theses
As the transistor count per chip in computer microprocessors surpasses one billion, the semiconductor industry has become more and more concerned with meeting processor’s power requirements. This poses a design challenge for the power supply module, especially when the processor operates at low voltage range. For example, the electrical requirement for the newest Intel microprocessors has exceeded 100A with an input voltage of approximately 1V. To overcome this problem, multiphase DC-to-DC converters encased in a voltage regulator module (VRM) have become the standard means of supplying power to computer microprocessor.
This study proposes a new topology for the multiphase DC-to-DC …
Optimization Of Gan Laser Diodes Using 1d And 2d Optical Simulations, Sean Richard Keali'i Jobe
Optimization Of Gan Laser Diodes Using 1d And 2d Optical Simulations, Sean Richard Keali'i Jobe
Master's Theses
This paper studies the optical properties of a GaN Laser Diode (LD). Through simulation, the GaN LD is optimized for the best optical confinement factor. It is found that there are optimal thicknesses of each layer in the diode that yield the highest optical confinement factor. There is a strong relationship between the optical confinement factor and lasing threshold—a higher optical confinement factor results in a lower lasing threshold. Increasing optical confinement improves lasing efficiency. Blue LDs are important to the future of lighting sources as they represent the final color in the RGB spectrum that does not have a …