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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter
Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter
Electrical Engineering Undergraduate Honors Theses
The paper explores possible metallization schemes to form simultaneous ohmic contacts to n-type and p-type silicon carbide contacts. Silicon carbide has shown promise in revolutionizing the power electronics market due to its increased switching speed, compact design, and higher temperature tolerance when compared to Silicon, the market standard. With the continuing development of silicon carbide technology, higher efficiency in future electric vehicles can be achieved by employing this new technology. This paper discusses theoretical contact formation between metals and semiconductors along with a proposed experiment to create a Ni/Al metallization scheme on both n and p-type contacts simultaneously on a …
Ohmic Contact Metallization For Silicon Carbide In Future Transportation And Aviation Systems, Tanner W. Rice
Ohmic Contact Metallization For Silicon Carbide In Future Transportation And Aviation Systems, Tanner W. Rice
Electrical Engineering Undergraduate Honors Theses
This paper analyzes metallization stacks in both n-type and p-type used in Silicon Carbide to create Ohmic Contacts. Silicon Carbide has shown its significance in usage as a semiconductor in high temperatures, and other extreme environments compared to its silicon counterpart. Additionally, silicon carbide exhibits many other favorable attributes such as strong radiation hardness, high power capability, and high-temperature tolerance. These attributes translate into great components for use in aviation and other future transportations by increasing reliability in a sector that already requires high reliability. Applications of this material could prove useful in fields such as aviation, among others. This …