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Electronic Devices and Semiconductor Manufacturing Commons™
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Articles 31 - 31 of 31
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Reduced Auger Recombination In Mid-Infrared Semiconductor Lasers, Robert Bedford, Gregory Edward Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jorg Hader
Reduced Auger Recombination In Mid-Infrared Semiconductor Lasers, Robert Bedford, Gregory Edward Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jorg Hader
Electrical and Computer Engineering Publications
A quantum-design approach to reduce the Auger losses in two micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6 lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 and represents about a 19-fold reduction in the equivalent “Auger coefficient.”