Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Keyword
-
- Silicon (7)
- Doping (4)
- Deep level (3)
- (ZnSe)X(SnSe)1-X (2)
- Amplifier circuit used on MOSFETs (2)
-
- Bipolar transistor structure (2)
- Buffer layer (2)
- CMBD (2)
- CdS. (2)
- Composite MEN-PP (2)
- Condensed matter (2)
- Convective heat transfer (2)
- Cu (In (2)
- Current-voltage characteristics (2)
- Cuvette (2)
- Defect (2)
- Distortion (2)
- Electroconductivity. (2)
- Electron transport (2)
- Emitter junction (2)
- Epitaxy (2)
- Family of drain-gate and drain characteristics. (2)
- Fiber-optic cable (2)
- Fiber-optic communication system (2)
- Fourier analysis (2)
- Ga) Se2 (2)
- Grain size (2)
- Heat transfer (2)
- Heat treatment (2)
- Heterojunction photodiodes (2)
Articles 31 - 38 of 38
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova
Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova
Euroasian Journal of Semiconductors Science and Engineering
The possibility of detection of defects in silicon wafers by Fourier analysis of digital images obtained by laser introscopy is shown.
Electrophysical Properties Of Multilayered Photo-Sensitive Structures With Barriers Of Metal-Semiconductor, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Feruza A. Giyasova, Oybek A. Abdulkhaev
Electrophysical Properties Of Multilayered Photo-Sensitive Structures With Barriers Of Metal-Semiconductor, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Feruza A. Giyasova, Oybek A. Abdulkhaev
Euroasian Journal of Semiconductors Science and Engineering
The results of studies aimed at creating photodiode structures with a spectral range of 0.85÷0.9 µm and 1.31÷1.55 µm with an area of 3x4 mm2, which are obtained by successive vacuum deposition of cadmium sulfide and indium phosphide layers on a doped gallium arsenide substrate doped with oxygen with a specific resistance of 1∙107 Ohm∙sm. A distinctive feature of the obtained Au-vGaAs photodiode: O-nCdS-nInP-Au structures is the two-sided sensitivity and the presence of the amplification effect of the primary photocurrent (especially in the impurity region of the spectrum) and low dark current values (of the order of 10 nA) at …
Stabilizing Action Of Sodium Citrate When Receiving Silver Nanoparticles By The Method Of Chemical Restoration, Komil M. Mukimov, Shamil M. Sharipov, Tal’At S. Asilov, Asliddin Kh. Bakhriddinov
Stabilizing Action Of Sodium Citrate When Receiving Silver Nanoparticles By The Method Of Chemical Restoration, Komil M. Mukimov, Shamil M. Sharipov, Tal’At S. Asilov, Asliddin Kh. Bakhriddinov
Euroasian Journal of Semiconductors Science and Engineering
The results of the synthesis of colloidal silver nanoparticles by the method of chemical reduction by ascorbic acid in the presence of sodium citrate are presented. The use of ascorbic acid as a reducing agent allows the synthesis of nanoparticles at room temperature. This makes it possible to study the mechanisms of the stabilizing effect of sodium citrate in the process of obtaining nanoparticles.
Influence Of Ultrasonic Waves On The Photoelectric And Spectral Characteristics Of Si-Photodetectors, Abdumalik G. Gaibov, Kutbiddin I. Vakhobov
Influence Of Ultrasonic Waves On The Photoelectric And Spectral Characteristics Of Si-Photodetectors, Abdumalik G. Gaibov, Kutbiddin I. Vakhobov
Euroasian Journal of Semiconductors Science and Engineering
The paper considers the influence of ultrasonic fields on the photoelectric and spectral characteristics of diffusion Si-receivers of electromagnetic radiation. It was found that ultrasonic irradiation increases the lifetime, diffusion length of carriers and, as a consequence, increases the efficiency of collecting carriers on the electrical contacts of Si-receivers. As a result of these processes, an increase in the value of the short-circuit current is observed, which causes an increase in the open circuit voltage and the efficiency of such a diffusion Si-structure operating in the photo reformation mode.
Cascode Injection-Voltaic Transistor Fiber/Polymer Composite, Ziyoda Kh. Aripova, Shunkorjon T. Toshmatov
Cascode Injection-Voltaic Transistor Fiber/Polymer Composite, Ziyoda Kh. Aripova, Shunkorjon T. Toshmatov
Euroasian Journal of Semiconductors Science and Engineering
This paper developed injection-voltaic transistor presents. The results research of the V-I characteristic of cascode injection-voltaic transistor. It is shown that the proposed transistor operates stably at values of the reverse voltage collector-base 2-3 times higher than single transistors.
Features Of Diffusion In Epitaxial Cosi2 Films Grown On The Surface Of Fluorete Of Deep Levels In Silicon Doped By Tungsten, Bakhrom E. Egamberdiev, Shokhruh A. Sayfulloev
Features Of Diffusion In Epitaxial Cosi2 Films Grown On The Surface Of Fluorete Of Deep Levels In Silicon Doped By Tungsten, Bakhrom E. Egamberdiev, Shokhruh A. Sayfulloev
Euroasian Journal of Semiconductors Science and Engineering
The paper presents the results of the analysis of the epitaxial film CoSi2/Si/CaF2(100) grown by molecular beam epitaxy. It is proved that under certain conditions of heat treatment, so-called epitaxial silicides are formed on the crystal structure, which can play the role of conductive layers or metal coatings. The data obtained allow us to draw conclusions about the morphology of the film and the nature of diffusion in the CoSi2 layer.
Upgrading Photo - Thermal Battery For Increasing Efficiency In Use Hot Climate, Ramizulla A. Muminov, Mukhammad N. Tursunov, Khabibullo X. Sabirov, Sanjar K. Shokuchkorov
Upgrading Photo - Thermal Battery For Increasing Efficiency In Use Hot Climate, Ramizulla A. Muminov, Mukhammad N. Tursunov, Khabibullo X. Sabirov, Sanjar K. Shokuchkorov
Euroasian Journal of Semiconductors Science and Engineering
The experimental results of the modernization of photo – thermal battery of the new design of increased efficiency with thermal contact of the collector with the back surface of the photovoltaic battery (PhB) are presented. It is shown that the use of materials with a large reflection coefficient in the lateral plane of reflection, increasing accuracy of the operational guidance node on the Sun reducing the capacity of the heat collector provides an increase in power and uniformity of the temperature of the real surface of the PhB, which allows to increase the efficiency of the device.
The Method Of Sealing Of Temperature Sensors With Nickel Nanoclusters, Saifillo S. Nasriddinov, Shoira P. Usmanova, Shukhrat A. Ismoilov
The Method Of Sealing Of Temperature Sensors With Nickel Nanoclusters, Saifillo S. Nasriddinov, Shoira P. Usmanova, Shukhrat A. Ismoilov
Euroasian Journal of Semiconductors Science and Engineering
A method of sealing of temperature sensors to protect them from external factors is presented. The properties of the compound are also considered: high mechanical strength, water resistance, low moisture permeability, heat resistance, ozone resistance, high electrical strength.