Electronic Devices and Semiconductor Manufacturing Commons^™

High Power Optically Pumped Semiconductor Lasers For Sodium Guidestar Applications, Shawn W. Hackett

Optical Science and Engineering ETDs

Optically pumped semiconductor lasers (OPSLs) are shown to provide a much more compact and less expensive source for illumination of the sodium layer of the mesosphere for use as a sodium laser guidestar via single and two photon excitation schemes. This represents a revolution in laser guidestar technology as the cost, size, and power requirements for a laser guidestar system are shown to have been decreased by an order of magnitude with guidestar performance shown to be similar to previous sources. Sodium laser guidestar sources for broadband simultaneous illumination of multiple lines are developed and simulated. Simulations are then compared …

Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne

Faculty Publications

Epitaxial Ge_1-ySn_y (y = 0%–7.5%) alloys grown on either Si or Ge-buffered Si substrates by chemical vapor deposition were studied as a function of Sn content using temperature-dependent photoluminescence (PL). PL emission peaks from both the direct bandgap (Γ-valley) and the indirect bandgap (L-valley) to the valence band (denoted by E_D and EID, respectively) were clearly observed at 125 and 175 K for most Ge_1-ySn_y samples studied. At 300 K, however, all of the samples exhibited dominant E_D emission with either very weak or no measureable E_ID emission. At 10 K, …

Direct Band Gap Gallium Antimonide Phosphide (Gasbxp1-X) For Solar Fuels., Harry Benjamin Russell

Electronic Theses and Dissertations

Photoelectrochemical water splitting has been identified as a promising route for achieving sustainable energy future. However, semiconductor materials with the appropriate optical, electrical and electrochemical properties have yet to be discovered. In search of an appropriate semiconductor to fill this gap, GaSbP, a semiconductor never tested for PEC performance is proposed here and investigated. Density functional theory (DFT+U) techniques were utilized to predict band gap and band edge energetics for GaSbP alloys with low amount of antimony. The overall objective of this dissertation is to understand the suitability of GaSb_xP_1-x alloys for photoelectrochemical water splitting application. Specifically, …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Monitoring The Threat Of Sinkhole Formation Under A Portion Of Us 18 In Cerro Gordo County, Iowa Using Tdr Measurements, Kevin O'Connor, Matthew Trainum

Sinkhole Conference 2015

Sinkhole formation is a common occurrence in northeast Iowa, and U.S. 18 in Cerro Gordo County was constructed over an area where sinkhole formation had only been locally known. It had not been recorded or identified in the Iowa DNR database at the time. Since 2004, sinkholes have developed along the right of way. Geophysical surveys contributed very little in the identifying the cause. However a Soil Survey (drilling program) identified numerous voids within carbonate bedrock. The soil borings indicated that shale overlying the carbonate rock has been removed/eroded, and resulted in the development of a karst subsurface through the …

Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li

Alexei Gruverman Publications

As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed …

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi₂Te₃ thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi₂Te₃ thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi₂Te₃, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …

Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm ². Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …

Enhancing The Insulation Of Wide-Range Spectrum In The Pva/N Thin Film By Doping Zno Nanowires, Yu-Chen Lin, Ching-Hsiang Vhen, Liang-Yih Chen, Shih-Chieh Hsu, Shizhi Qian

Mechanical & Aerospace Engineering Faculty Publications

In this study, polyvinyl alcohol/nitrogen (PVA/N) hybrid thin films doped with sharp-sword ZnO nanowires with insulating effect and wide-range spectrum are demonstrated for the first time. PVA/N doped ZnO nanocomposites were developed by blending PVA and N-doped ZnO nanowires in water at room temperature. Measurements from the field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman, and photoluminescence emission (PL) spectra of the products show that nitrogen is successfully doped into the ZnO wurtzite crystal lattice. In addition, the refractive index of PVA/N doped ZnO hybrid thin films can be controlled by varying the doped ZnO nanowires under different …

Using Software-Based Decision Procedures To Control Instruction-Level Execution, William B. Kimball

AFIT Patents

An apparatus, method and program product are provided for securing a computer system. A digital signature of an application is checked, which is loaded into a memory of the computer system configured to contain memory pages. In response to finding a valid digital signature, memory pages containing instructions of the application are set as executable and memory pages other than those containing instructions of the application are set as non-executable. Instructions in executable memory pages are executed. Instructions in non-executable memory pages are prevented from being executed. A page fault is generated in response to an attempt to execute an …

Electron Drift-Mobility Measurements In Polycrystalline Cuin1-Xgaxse2 Solar Cells, Steluta A. Dinca, Eric A. Schiff, William N. Shafarman, Brian Egaas, Rommel Noufi, David L. Young

Physics - All Scholarship

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn_1-xGa_xSe₂ films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm^2/Vs and are weakly temperature-dependent from 100–300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm²/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

Wavelength Dependence Of Transverse Mode Coupling With/Without E-Block Of Gan Laser Cavity, Krishneel Lal

Electrical Engineering

No abstract provided.

Self-Assembling Organic Semiconductors With Tunable Electronic Properties Based On Novel Asymmetric Phenazine And Bisphenazine, Kyoungmi Jang

UNLV Theses, Dissertations, Professional Papers, and Capstones

Current demands in the area of organic semiconductors focus on both electronic and self-assembling properties. Particularly, one-dimensionally grown nanostructures of small organic semiconductors have drawn much attention for nanodevice fabrication. Self-assembly through various intermolecular interactions has been widely used to produce one-dimensionally grown nanostructures which can be induced by various methods such as rapid solution dispersion, a phase transfer method, vapor annealing, crystallization, and organogelation in conjunction with proper molecular design. Controlling the morphology of the nanostructures plays an important role in achieving desirable properties in optoelectronic device applications. While significant advancements have been made in developing molecular architectures for …

Optical Metamaterial Design, Fabrication And Test, Jack P. Lombardi

Theses and Dissertations

Metamaterials, materials that make use of naturally occurring materials and designed structures to create materials with special properties not found in nature, are a fascinating new area of research, combining the fields of physics, microfabrication, and material science. This work will focus on the development of metamaterials operating in the visible and infrared which will be constructed and tested for basic optical properties. Possible applications for these materials will not be investigated. The this work will go into the fabrication and test of layered metal-dielectric structures, called layered metamaterials, as these structures hold potential for applications in advanced optical systems. …

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …

Precise Control Of Highly Ordered Arrays Of Nested Semiconductor/Metal Nanotubes, Diefeng Gu, Helmut Baumgart, Kandabara Tapily, Pragya Shrestha, Gon Namkoong, Xianyu Ao, Frank Müller

Electrical & Computer Engineering Faculty Publications

Lithographically defined microporous templates in conjunction with the atomic layer deposition (ALD) technique enable remarkable control of complex novel nested nanotube structures. So far three-dimensional control of physical process parameters has not been fully realized with high precision resolution, and requires optimization in order to achieve a wider range of potential applications. Furthermore, the combination of composite insulating oxide layers alternating with semiconducting layers and metals can provide various types of novel applications and eventually provide unique and advanced levels of multifunctional nanoscale devices. Semiconducting TiO₂ nanotubes have potential applications in photovoltaic devices. The combination of nanostructured semiconducting materials …

The Applications And Limitations Of Printable Batteries, Matthew Delmanowski

Graphic Communication

This study focuses on the potential applications for printed batteries and how they could affect the printing industry. It also analyzes the main problems associated with manufacturing this technology and what needs to be done to overcome these issues. To find the answers to these questions, two methods of research were used. The first was through the elite and specialized interviewing of Dr. Scott Williams of Rochester Institute of Technology and Professor Nancy Cullins from Cal Poly. The second form of research was a common, yet useful, method called secondary research. This entailed looking at recent written research papers about …

Vibrational Frequencies Of Magnetic Random Access Memory Materials., Lee Li Ling

Student Works (2010-2019)

The advantages of MRAM are so overwhelming which acts as motivation for scientist in further investigation for better read and write operation. The types of materials used are closely related to the cell performance in forming the ferromagnetic layers. Thus,the vibrational frequencies of the MRAM materials are of interest. Clusters for the two types of combinations, FexNiy and FexCoyBz are built. Subsequently, vibrational frequencies of each cluster are calculated theoretically from the first principles. The secular determinant is large when the number of electrons in a cluster is large. For the simplest combination of Fe-Ni cluster, (atomic number of an …

Development And Demonstration Of A Field-Deployable Fast Chromotomographic Imager, Daniel C. O'Dell

Theses and Dissertations

A field deployable hyperspectral imager utilizing chromotomography (CT), with a direct vision prism (DVP) as the dispersive element, has been constructed at AFIT. This research is focused on the development and demonstration of the CT imager. An overview of hyperspectral imaging, chromotomography, a synopsis of reconstruction algorithms, and other CT instruments are given. The importance of component alignment, instrument calibration, and exact prism angular position data are discussed. A simplistic \shift and add" reconstruction algorithm was utilized for this research. Although limited in its ability to reconstruct a spatially and spectrally diverse scene, the algorithm was adequate for the testing …

Production Of Multiwall Carbon Nanotube For Alcohol Sensor Application., Ebtehal Saleh Alshaqaq

Student Works (2010-2019)

Multiwall carbon nanotube/polyethylene oxide (PEO), multiwall carbon nanoube/polyvinyl alcohol(PVA) and multiwall carbon nanotube/ polyvinyl alcohol(PVA)/zinc oxide(ZnO) have been tested as chemical sensors and detailed study on the effect of different gas concentration and material properties on gas sensitivity is presented. Initial composites were prepared by a simple solution casting and characterized by x-ray diffraction for ZnO, Fourier transform infra-red spectroscopy (FTIR) and scanning electron microscopy (SEM) to demonstrate crystallite size of ZnO, the morphology and surface area respectively. On the other hand, MWCNT/PEO , MWCNT/PVA , MWCNT/PVA/ZnO were prepared with different loading MWCNT and ZnO. The chemical sensing properties of …

Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si (100)-(2×1) was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250 °C, a temperature too low for their formation without excitation. At a substrate temperature of 390 °C, electronic excitation during growth was found to improve the …

Hand-Held Flyback Driven Coaxial Dielectric Barrier Discharge: Development And Characterization, Victor J. Law, Vladimir Milosavljevic, Neil O’Connor, James F. Lalor, Steven Daniels

Articles

The development of a handheld single and triple chamber atmospheric pressure coaxial dielectric barrier discharge driven by Flyback circuitry for helium and argon discharges is described. The Flyback uses external metal-oxide-semiconductor field-effect transistor power switching technology and the transformer operates in the continuous current mode to convert a continuous dc power of 10–33 W to generate a 1.2–1.6 kV 3.5 μs pulse. An argon discharge breakdown voltage of ∼768 V is measured. With a 50 kHz, pulse repetition rate and an argon flow rate of 0.5–10 argon slm (slm denotes standard liters per minute), the electrical power density deposited in …

A Timer Module For An 8051 Microcontroller, Troy England

Electrical Engineering Undergraduate Honors Theses

A timer module for an 8051 Microcontroller is designed from the ground up. It could potentially be integrated into a larger 8051 for use in lunar and Martian missions. It follows through a synchronous digital design flow from HDL code through layout verification. The timer shows functionality at 100MHz with some minor glitches.

Real-Time Plasma Controlled Chemistry In A Two-Frequency, Confined Plasma Etcher, Vladimir Milosavljevic, Albert R. Ellingboe, Cezar Gaman, John V. Ringwood

Articles

The physics issues of developing model-based control of plasma etching are presented. A novel methodology for incorporating real-time model-based control of plasma processing systems is developed. The methodology is developed for control of two dependent variables (ion flux and chemical densities) by two independent controls (27 MHz power and O2flow). A phenomenological physics model of the nonlinear coupling between the independent controls and the dependent variables of the plasma is presented. By using a design of experiment, the functional dependencies of the response surface are determined. In conjunction with the physical model, the dependencies are used to deconvolve the sensor …

Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …

Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey

Faculty Publications

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (R_X) and quality factor (Q) with the resonators’ silicon layer thickness (t_Si). For identical lateral dimensions and PZT-layer thicknesses (t_PZT), the PZT-on-silicon resonator has higher resonant frequency (f_C), higher Q (5100 versus 140), lower R_X (51 Ω versus 205 Ω), and better linearity [third-order input intercept …

Socio-Economic Impacts Of Computer Viruses In Tanzania, M Victor

Tanzania Journal of Engineering and Technology (TJET)

This paper reports on a research project conducted with an objective of identifying and assessing various approaches used by different computer users (Management, System Administrators and end users) in Tanzania to combat computer viruses (CVs), and to assess users' awareness level on CVs. Specifically, the study aimed at assessing the awareness level on CVs to the Tanzanian business community; analyze the socio -economic impact caused by CVs in Tanzania and; assess existing methods, capacity and limitations on controlling CVs in Tanzania. Data was collected using both questionnaires and interview from financial institutions such as NBC and BOT, and telecommunications sector …

Characterization And Quantum Efficiency Validation Of Ingaas Linear Focal Plane Array, Christopher Salenga Garcia

Electrical & Computer Engineering Theses & Dissertations

A 1x1024 InGaAs linear hybrid focal plane array (FPA) with CMOS readout was characterized at room temperature to analyze its electrical and optical properties and to measure its performance parameters.

The most important parameter of an FPA is the gain constant K, which allows conversion of the FPA output measurement unit from digital counts into the number of generated signal electrons. For FPAs with CMOS readout, the commonly used meanvariance method for determining K often underestimates its value. A more reliable method for finding K is the photon transfer technique, which is developed for FPAs with CCD readout. This …

Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm ² fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]