Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Keyword
-
- Absorber layers (1)
- Al composition (1)
- Aluminum (1)
- Bowing parameters (1)
- Composition ranges (1)
-
- Elemental evaporation (1)
- High-efficiency solar cells (1)
- Indium arsenide (1)
- Lattice spacing (1)
- Monte Carlo method (1)
- Nanostructured materials (1)
- Open circuit voltage (1)
- Optical detectors (1)
- Photon transport theory (1)
- Semiconducting selenium compounds (1)
- Semiconductors (1)
- Spectroscopic ellipsometry (1)
- Subband-gap (1)
- Thin films (1)
- Xray diffraction (1)
- Publication
- Publication Type
Articles 1 - 2 of 2
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada
Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada
Electrical & Computer Engineering Theses & Dissertations
The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of …
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …