Electronic Devices and Semiconductor Manufacturing Commons^™

Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel

Theses

The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …

Engineering Electromagnetic Systems For Next-Generation Brain-Machine Interface, Brayan Ricardo Navarrete

FIU Electronic Theses and Dissertations

MagnetoElectric Nanoparticles (MENPs) are known to be a powerful tool for a broad range of applications spanning from medicine to energy-efficient electronics. MENPs allow to couple intrinsic electric fields in the nervous system with externally controlled magnetic fields. This thesis exploited MENPs to achieve contactless brain-machine interface (BMIs). Special electromagnetic devices were engineered for controlling the MENPs’ magnetoelectric effect to enable stimulation and recording. The most important engineering breakthroughs of the study are summarized below.

(I) Metastable Physics to Localize Nanoparticles: One of the main challenges is to localize the nanoparticles at any selected site(s) in the brain. The fundamental …

Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya

Theses and Dissertations

To meet the ever-growing demand of faster and smaller computers, increasing number of transistors are needed in the same chip area. Unfortunately, Silicon based transistors have almost reached their miniaturization limits mainly due to excessive heat generation. Nanomagnetic devices are one of the most promising alternatives of CMOS. In nanomagnetic devices, electron spin, instead of charge, is the information carrier. Hence, these devices are non-volatile: information can be stored in these devices without needing any external power which could enable computing architectures beyond traditional von-Neumann computing. Additionally, these devices are also expected to be more energy efficient than CMOS devices …