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Electrical and Computer Engineering Commons

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1998

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Articles 241 - 247 of 247

Full-Text Articles in Electrical and Computer Engineering

Thermodynamic Modeling And Analysis Of Human Stress Responses, Satish C. Boregowda Jan 1998

Thermodynamic Modeling And Analysis Of Human Stress Responses, Satish C. Boregowda

Mechanical & Aerospace Engineering Theses & Dissertations

A novel approach based on the second law of thermodynamics is developed to investigate the psychophysiology and quantify human stress level. Two types of stresses (thermal and mental) are examined. A Unified Stress Response Theory (USRT) is developed under the new proposed field of study called Engineering Psychophysiology. The USRT is used to investigate both thermal and mental stresses from a holistic (human body as a whole) and thermodynamic viewpoint. The original concepts and definitions are established as postulates which form the basis for thermodynamic approach to quantify human stress level. An Objective Thermal Stress Index (OTSI) is developed by …


Passive Circuit Modeling Using Ipa510, Hassan Hiwaidi Al-Sheikhly Jan 1998

Passive Circuit Modeling Using Ipa510, Hassan Hiwaidi Al-Sheikhly

Dissertations and Theses

Characterizing the high speed interconnect performance of circuit board, integrated circuit packages and multichip module become very important when the clock frequencies in digital and RF systems become larger than 200 MHz. At time scales less than 2 ns distributed approach must be used to measure package parasitics (stray inductance and capacitance) and transmission line effects.

A practical way to measure and model the package parasitics is by utilizing Interconnect Parameter Analyzer (IP A510). The IP A510 uses Time Domain Reflectometry (TDR) technique. The TDR technique is based on sending a waveform to a device under test (DUT) and capturing …


An Approach To Exact Modeling Of The Pwm Switch, Anas N. Al-Rabadi Jan 1998

An Approach To Exact Modeling Of The Pwm Switch, Anas N. Al-Rabadi

Dissertations and Theses

Large number of small-signal models of de-to-de power converters exists already. These models usually use two techniques. The first is the averaging technique, such as: volt-second and current-second balance, state space averaging, and the averaged modeling approach. The other technique focuses on the exact modeling approach, such as: the application of time varying systems theory to linearize networks. One of the methodologies to apply the above techniques, is to view the three-terminal systems as a two-port network.

The aim of the work presented in this thesis is to develop a new approach, by the application of the two-port network methodology …


Femtosecond Photoemission Study Of Ultrafast Electron Dynamics In Single-Crystal Au(111) Films, J. Cao, Y. Gao, H. E. Elsayed-Ali, R. J. D. Miller, D. A. Mantell Jan 1998

Femtosecond Photoemission Study Of Ultrafast Electron Dynamics In Single-Crystal Au(111) Films, J. Cao, Y. Gao, H. E. Elsayed-Ali, R. J. D. Miller, D. A. Mantell

Electrical & Computer Engineering Faculty Publications

The energy-dependent relaxation of photoexcited electrons has been measured by time-resolved two-photon photoemission spectroscopy on single-crystal Au(111) films with thickness ranging from 150 to 3000 Å. It is found that the energy-dependent relaxation does not show any significant thickness dependence, which indicates that electron transport is a much slower dynamical process in the near-surface region than expected from bulk properties. Furthermore, lifetimes of the photoexcited electrons can be fitted well by the Fermi-liquid theory with a scaling factor plus an effective upper lifetime. This observation enables separation of electron-electron scattering, and to a lesser extent electron-phonon scattering, processes from electron-transport …


Atomic Hydrogen Cleaning Of Inp(100) For Preparation Of A Negative Electron Affinity Photocathode, K. A. Elamrawi, M. A. Hafez, H. E. Elsayed-Ali Jan 1998

Atomic Hydrogen Cleaning Of Inp(100) For Preparation Of A Negative Electron Affinity Photocathode, K. A. Elamrawi, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Atomic hydrogen cleaning is used to clean InP(100) negative electron affinity photocathodes. Reflection high-energy electron diffraction patterns of reconstructed, phosphorus-stabilized, InP(100) surfaces are obtained after cleaning at ∼400 °C. These surfaces produce high quantum efficiency photocathodes (∼8.5%), in response to 632.8 nm light. Without atomic hydrogen cleaning, activation of InP to negative electron affinity requires heating to ∼530 °C. At this high temperature, phosphorus evaporates preferentially and a rough surface is obtained. These surfaces produce low quantum efficiency photocathodes (∼0.1%). The use of reflection high-energy electron diffraction to measure the thickness of the deposited cesium layer during activation by correlating …


A New Radiosonde System For Profiling The Lower Troposphere, Brian R Corner, Robert D. Palmer Jan 1998

A New Radiosonde System For Profiling The Lower Troposphere, Brian R Corner, Robert D. Palmer

Department of Electrical and Computer Engineering: Faculty Publications

A new, inexpensive radiosonde transmitter and receiver system has been developed for measuring wind field inhomogeneities in the planetary boundary layer using multiple simultaneously launched balloons. The radio- sondes use a narrowband-frequency-modulated carrier signal to transmit atmospheric pressure and temperature information to a surface receiver. The pressure and temperature data transmitted by the radiosondes allow their height above the surface to be ascertained. In addition, the radiosondes can be tracked with a photographic camera system to provide the azimuth and elevation angles of the radiosondes during their ascent, so that their three-dimensional horizontal position can be determined. By tracking the …


Optical Determination Of Shallow Carrier Profiles Using Fourier Transform Infrared Ellipsometry, Thomas E. Tiwald, John A. Woollam, John A. Woollam Jan 1998

Optical Determination Of Shallow Carrier Profiles Using Fourier Transform Infrared Ellipsometry, Thomas E. Tiwald, John A. Woollam, John A. Woollam

Department of Electrical and Computer Engineering: Faculty Publications

Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. The noncontact, nondestructive nature of the measurement suggests both ex situ and in situ monitoring and control applications. In this study, the carrier profiles were modeled as graded multilayers that can be constrained to a given functional form (Gaussian, erfc, etc.) when desired. Boron and arsenic implanted silicon wafers that were rapid thermal anneal and furnace annealed were …