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Electrical and Computer Engineering Publications

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Articles 91 - 120 of 302

Full-Text Articles in Electrical and Computer Engineering

Nanowire-Based Frequency-Selective Capacitive Photodetector For Resonant Detection Of Infrared Radiation At Room Temperature, Saumil Bandyopadhyay Jan 2014

Nanowire-Based Frequency-Selective Capacitive Photodetector For Resonant Detection Of Infrared Radiation At Room Temperature, Saumil Bandyopadhyay

Electrical and Computer Engineering Publications

Characteristics of a capacitive infrared photodetector that works at room temperature by registering a change in capacitance upon illumination are reported. If used in an ideal resonant inductor-resistor-capacitor circuit, it can exhibit zero dark current, zero standby power dissipation, infinite detectivity, and infinite light-to-dark contrast ratio. It is also made frequency-selective by employing semiconductor nanowires that selectively absorb photons of energies close to the nanowire's bandgap. Based on measured parameters, the normalized detectivity is estimated to be ∼3 × 107 Jones for 1.6 μm IR wavelength at room temperature.

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Excitonic Recombination Dynamics In Non-Polar Gan/Algan Quantum Wells, D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü Özgür, H. Morkoç, J. H. Leach Jan 2014

Excitonic Recombination Dynamics In Non-Polar Gan/Algan Quantum Wells, D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü Özgür, H. Morkoç, J. H. Leach

Electrical and Computer Engineering Publications

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in …

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Properties Of The Main Mg-Related Acceptors In Gan From Optical And Structural Studies, B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, I. Akasaki Jan 2014

Properties Of The Main Mg-Related Acceptors In Gan From Optical And Structural Studies, B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, I. Akasaki

Electrical and Computer Engineering Publications

The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be the main optical signature of the substitutional Mg Ga acceptor, thus, having a rather large binding energy and a strong phonon coupling in optical transitions. We present new experimental data on homoepitaxial Mg-doped layers, which together with the previous collection of data give an improved experimental picture of the various luminescence features in Mg-doped GaN. In n-type GaN with moderate Mg doping (<1018 cm−3), the 3.466 eV …

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Spectroscopy Studies Of Straincompensated Mid-Infrared Qcl Active Regions On Misoriented Substrates, Gregory Edward Triplett, Justin Grayer, Charles Meyer, Emily Cheng, Denzil Roberts Jan 2014

Spectroscopy Studies Of Straincompensated Mid-Infrared Qcl Active Regions On Misoriented Substrates, Gregory Edward Triplett, Justin Grayer, Charles Meyer, Emily Cheng, Denzil Roberts

Electrical and Computer Engineering Publications

In this work, we perform spectroscopic studies of AlGaAs/InGaAs quantum cascade laser structures that demonstrate frequency mixing using strain-compensated active regions. Using a three-quantum well design based on diagonal transitions, we incorporate strain in the active region using single and double well configurations on various surface planes (100) and (111). We observe the influence of piezoelectric properties in molecular beam epitaxy grown structures, where the addition of indium in the GaAs matrix increases the band bending in between injector regions and demonstrates a strong dependence on process conditions that include sample preparation, deposition rates, mole fraction, and enhanced surface diffusion …

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Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng Jan 2014

Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng

Electrical and Computer Engineering Publications

In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.

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Are Students Satisfied With Media: A Canadian Case Study, Gerd Gidion, Luiz Fernando Capretz, Ken Meadow, Michael Grosch Jan 2014

Are Students Satisfied With Media: A Canadian Case Study, Gerd Gidion, Luiz Fernando Capretz, Ken Meadow, Michael Grosch

Electrical and Computer Engineering Publications

The article presents partial results of a survey about media usage habits for studying and learning conducted in 2013 at Western University, a large Canadian university. The article focuses on students’ frequency of use and satisfaction with media for studying and learning. The results of this study support the assumption that student’s media usage includes a mixture of traditional and new media. The main traditional media continue to play an important role in the students’ academic life, and some new media have emerged as seemingly on equal footing or even more important than the traditional forms of media. The use …

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Using Meta-Ethnography To Synthesize Research: A Worked Example Of The Relations Between Personality On Software Team Processes, Fabio Q. B. Silva Dr., Shirley S. J. O. Cruz, Tatiana B. Gouveia, Luiz Fernando Capretz Sep 2013

Using Meta-Ethnography To Synthesize Research: A Worked Example Of The Relations Between Personality On Software Team Processes, Fabio Q. B. Silva Dr., Shirley S. J. O. Cruz, Tatiana B. Gouveia, Luiz Fernando Capretz

Electrical and Computer Engineering Publications

Context: The increase in the number of qualitative and mixed-methods research published in software engineering has created an opportunity for further knowledge generation through the synthesis of studies with similar aims. This is particularly true in the research on human aspects because the phenomena of interest are often better understood using qualitative research. However, the use of qualitative synthesis methods is not widespread and worked examples of their consistent application in software engineering are needed. Objective: To explore the use of meta-ethnography in the synthesis of empirical studies in software engineering through an example using studies about the relations between …

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Reliability Models Applied To Mobile Applications, Luiz Fernando Capretz, Sonia Meskini, Ali Bou Nassif Dr. Jun 2013

Reliability Models Applied To Mobile Applications, Luiz Fernando Capretz, Sonia Meskini, Ali Bou Nassif Dr.

Electrical and Computer Engineering Publications

Smartphones have become the most used electronic devices. They carried out most of the functionalities of desktops, allowing various useful applications that suit the users’ needs. Therefore, instead of the operator, the user has become the number one controller of the device and its applications and thus its reliability becomes an emergent need. We aim to investigate and evaluate the efficacy of Software Reliability Growth Models (SRGMs) when applied to Smartphone application failure data and check whether they achieve the same success as in the desktop/laptop area. We selected three of the most used SRGMs and applied them to three …

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Soft Skills And Software Development: A Reflection From The Software Industry, Faheem Ahmed, Luiz Fernando Capretz, Salah Bouktif, Piers Campbell May 2013

Soft Skills And Software Development: A Reflection From The Software Industry, Faheem Ahmed, Luiz Fernando Capretz, Salah Bouktif, Piers Campbell

Electrical and Computer Engineering Publications

Psychological theories assert that not everybody is fit for every task, as people have different personality traits and abilities. Often, personality traits are expressed in people’s soft skills. That is, the way people perceive, plan and execute any assigned task is influenced by their set of soft skills. Most of the studies carried out on the human factor in IS concentrate primarily on personality types. Soft skills have been given comparatively little attention by researchers. We review the literature relating to soft skills and the software engineering and information systems domain before describing a study based on 650 job advertisements …

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Degradation In Algan/Gan Heterojunction Field Effect Transistors Upon Electrical Stress: Effects Of Field And Temperature, C. Y. Zhu, F. Zhang, Romualdo A. Ferreyra, U. Ozgur, Hadis Morkoç Jan 2013

Degradation In Algan/Gan Heterojunction Field Effect Transistors Upon Electrical Stress: Effects Of Field And Temperature, C. Y. Zhu, F. Zhang, Romualdo A. Ferreyra, U. Ozgur, Hadis Morkoç

Electrical and Computer Engineering Publications

AlGaN/GaN heterojunction field effect transistors (HFETs) with 2 μm gate length were subjected to on-state-high-field (high drain bias and drain current) and reverse-gate-bias (no drain currentand reverse gate bias) stress at room and elevated temperatures for up to 10 h. The resulting degradation of the HFETs was studied by direct current and uniquely phase noise before and after stress. A series of drain and gate voltages was applied during the on-state-high-field and reverse-gate-bias stress conditions, respectively, to examine the effect of electric field on degradation of the HFET devices passivated with SiNx. The degradation behaviors under these two types of …

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The Effect Of Stair Case Electron Injector Design On Electron Overflow In Ingan Light Emitting Diodes, F. Zhang, X. Li, S. Hafiz, S. Okur, Vitaliy Avrutin, U. Ozgur, Hadis Morkoç, A. Matulionis Jan 2013

The Effect Of Stair Case Electron Injector Design On Electron Overflow In Ingan Light Emitting Diodes, F. Zhang, X. Li, S. Hafiz, S. Okur, Vitaliy Avrutin, U. Ozgur, Hadis Morkoç, A. Matulionis

Electrical and Computer Engineering Publications

Effect of two-layer (In0.04Ga0.96N and In0.08Ga0.92N) staircase electron injector (SEI) on quantum efficiency of light-emitting-diodes (LEDs) in the context of active regions composed of single and quad 3 nm double heterostructures (DHs) is reported. The experiments were augmented with the first order model calculations of electron overflow percentile. Increasing the two-layer SEI thickness from 4 + 4 nm up to 20 + 20 nm substantially reduced, if not totally eliminated, the electron overflow in single DH LEDs at low injections without degrading the material quality evidenced by the high optical efficiency observed at 15K and room temperature. The improvement in …

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Ultra-Low-Energy Non-Volatile Straintronic Computing Using Single Multiferroic Composites, Kuntal Roy Jan 2013

Ultra-Low-Energy Non-Volatile Straintronic Computing Using Single Multiferroic Composites, Kuntal Roy

Electrical and Computer Engineering Publications

The primary impediment to continued downscaling of traditional charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the device during switching of bits. One very promising solution is to utilize multiferroicheterostructures, comprised of a single-domain magnetostrictive nanomagnet strain-coupled to a piezoelectric layer, in which the magnetization can be switched between its two stable states while dissipating minuscule amount of energy. However, no efficient and viable means of computing is proposed so far. Here we show that such single multiferroic composites can act as universal logic gates for computing purposes, which we demonstrate …

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Reliability Of Algan/Gan High Electron Mobility Transistors On Low Dislocation Density Bulk Gan Substrate: Implications Of Surface Step Edges, N. Killat, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, Hadis Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, M. Kuball Jan 2013

Reliability Of Algan/Gan High Electron Mobility Transistors On Low Dislocation Density Bulk Gan Substrate: Implications Of Surface Step Edges, N. Killat, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, Hadis Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, M. Kuball

Electrical and Computer Engineering Publications

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gateleakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths.Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges ofsurface steps.

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Acoustically Assisted Spin-Transfer-Torque Switching Of Nanomagnets: An Energy-Efficient Hybrid Writing Scheme For Non-Volatile Memory, Ayan K. Biswas, Supriyo Bandyopadhyay, Jayasimha Atulasimha Jan 2013

Acoustically Assisted Spin-Transfer-Torque Switching Of Nanomagnets: An Energy-Efficient Hybrid Writing Scheme For Non-Volatile Memory, Ayan K. Biswas, Supriyo Bandyopadhyay, Jayasimha Atulasimha

Electrical and Computer Engineering Publications

We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle.

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Correlation Between Si Doping And Stacking Fault Related Luminescence In Homoepitaxial M-Plane Gan, S. Khromov, B. Monemar, Vitaliy Avrutin, Hadis Morkoç, L. Hultman, G. Pozina Jan 2013

Correlation Between Si Doping And Stacking Fault Related Luminescence In Homoepitaxial M-Plane Gan, S. Khromov, B. Monemar, Vitaliy Avrutin, Hadis Morkoç, L. Hultman, G. Pozina

Electrical and Computer Engineering Publications

Si-doped GaN layers grown by metal organic vapor phase epitaxy on m-plane GaN substrates were investigated by low-temperature cathodoluminescence (CL). We have observed stacking fault (SF) related emission in the range of 3.29–3.42 eV for samples with moderate doping, while for the layers with high concentration of dopants, no CL lines related to SFs have been noted. Perturbation of the SF potential profile by neighboring impurity atoms can explain localization ofexcitons at SFs, while this effect would vanish at high doping levels due to screening.

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Microscopic Distribution Of Extended Defects And Blockage Of Threading Dislocations By Stacking Faults In Semipolar (1101)(1101)()(1101)() Gan Revealed From Spatially Resolved Luminescence, S. Okur, S. Metzner, N. Izyumskaya, F. Zhang, Vitaliy Avrutin, C. Karbaum, F. Bertram, J. Christen, Hadis Morkoç, Ü. Özgür Jan 2013

Microscopic Distribution Of Extended Defects And Blockage Of Threading Dislocations By Stacking Faults In Semipolar (1101)(1101)()(1101)() Gan Revealed From Spatially Resolved Luminescence, S. Okur, S. Metzner, N. Izyumskaya, F. Zhang, Vitaliy Avrutin, C. Karbaum, F. Bertram, J. Christen, Hadis Morkoç, Ü. Özgür

Electrical and Computer Engineering Publications

Spatial distribution of extended defects in semipolar -oriented GaN layers grown on patterned(001) Si substrates with striped grooves of varying width was investigated by optical means only using near-field scanning optical microscopy (NSOM) and cathodoluminescence (CL). A high density of basal and prismatic stacking faults was observed in the c− wings, and the threadingdislocations in c+ wings, which appear as dark patterns in the NSOM and CL images, were found to bend toward the surface during the initial stages of growth. In the case when growingc+ front of GaN made contact with the SiO2 masking layer during growth, stacking …

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Strain Induced Variations In Band Offsets And Built-In Electric Fields In Ingan/Gan Multiple Quantum Wells, L. Dong, J. V. Mantese, Vitaliy Avrutin, Ü. Özgür, H. Morkoç, S. P. Alpay Jan 2013

Strain Induced Variations In Band Offsets And Built-In Electric Fields In Ingan/Gan Multiple Quantum Wells, L. Dong, J. V. Mantese, Vitaliy Avrutin, Ü. Özgür, H. Morkoç, S. P. Alpay

Electrical and Computer Engineering Publications

The band structure, quantum confinement of charge carriers, and their localization affect the optoelectronic properties of compound semiconductor heterostructures and multiple quantum wells (MQWs). We present here the results of a systematic first-principles based density functional theory (DFT) investigation of the dependence of the valence band offsets and band bending in polar and non-polar strain-free and in-plane strained heteroepitaxial In x Ga1- xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with [12¯10]InGaN // [12¯10]GaN and [0001]InGaN // [0001]GaN epitaxial alignments, the valence band offset changes linearly from 0 to 0.57 eV …

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Enhanced Microwave Dielectric Tunability Of Ba0.5sr0.5tio3 Thin Films Grown With Reduced Strain On Dysco3 Substrates By Three-Step Technique, Hongrui Liu, Vitaliy Avrutin, Congyong Zhu, Ümit Özgür, Juan Yang, Changzhi Lu, Hadis Morkoç Jan 2013

Enhanced Microwave Dielectric Tunability Of Ba0.5sr0.5tio3 Thin Films Grown With Reduced Strain On Dysco3 Substrates By Three-Step Technique, Hongrui Liu, Vitaliy Avrutin, Congyong Zhu, Ümit Özgür, Juan Yang, Changzhi Lu, Hadis Morkoç

Electrical and Computer Engineering Publications

Tunable dielectric properties of epitaxial ferroelectric Ba0.5Sr0.5TiO3 (BST) thin films deposited on nearly lattice-matched DyScO3 substrates by radio frequency magnetron sputtering have been investigated at microwave frequencies and correlated with residual compressive strain. To reduce the residual strain of the BST films caused by substrate clamping and improve their microwave properties, a three-step deposition method was devised and employed. A high-temperature deposition at 1068 K of the nucleation layer was followed by a relatively low-temperature deposition (varied in the range of 673–873 K) of the BST interlayer and a high-temperature deposition at 1068 K …

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Spectral Distribution Of Excitation-Dependent Recombination Rate In An In0.13ga0.87n Epilayer, K. Jarašiūnas, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, M. Vengris, S. Okur, H. Morkoç, Ü Özgür, C. Giesen, Ö. Tuna, M. Heuken Jan 2013

Spectral Distribution Of Excitation-Dependent Recombination Rate In An In0.13ga0.87n Epilayer, K. Jarašiūnas, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, M. Vengris, S. Okur, H. Morkoç, Ü Özgür, C. Giesen, Ö. Tuna, M. Heuken

Electrical and Computer Engineering Publications

Time-resolved optical techniques of photoluminescence (PL), light-induced transient grating(LITG), and differential transmission spectroscopy were used to investigate carrier dynamics in a single 50-nm thick In0.13Ga0.97N epilayer at high photoexcitation levels. Data in wide spectral, temporal, excitation, and temperature ranges revealed novel features in spectral distribution of recombination rates as follows: at low injection levels, an inverse correlation of carrier life time increasing with temperature and diffusivity decreasing with temperature confirmed a mechanism of diffusion-limited nonradiative recombination at extended defects. Carrier dynamics in the spectral region below the absorption edge but ∼70 meV above the PL band …

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Optical Studies Of Strain And Defect Distribution In Semipolar (1(1)Over-Bar01) Gan On Patterned Si Substrates, N. Izyumskaya, F. Zhang, S. Okur, T. Selden, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç Jan 2013

Optical Studies Of Strain And Defect Distribution In Semipolar (1(1)Over-Bar01) Gan On Patterned Si Substrates, N. Izyumskaya, F. Zhang, S. Okur, T. Selden, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Electrical and Computer Engineering Publications

Formation of defects in semipolar ( 11¯01 )-oriented GaN layers grown by metal-organic chemical vapor deposition on patterned Si (001) substrates and their effects on optical properties were investigated by steady-state and time-resolved photoluminescence (PL) and spectrally and spatially resolved cathodoluminescence (CL). Near-band edge emission is found to be dominant in the c +-wings of semipolar ( 11¯01 )GaN, which are mainly free from defect-related emission lines, while the c – wings contain a large number of basal stacking faults. When the advancing c+ and c — fronts meet to coalesce into a continuous film, the existing stacking faults contained …

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Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett Jan 2013

Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett

Electrical and Computer Engineering Publications

This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-matched semiconductor structures have resulted in the deployment of non-traditional approaches such as strain compensation to extend wavelength in intersubband devices, where strain limits are related to misfit dislocation generation. Strain and piezoelectric effects have been studied and verified using select photonic device designs. Metrics under this effort also included dipole strength, oscillator strength, and offset of energy transitions, which are strongly correlated with induced piezoelectric …

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Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham Jan 2013

Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham

Electrical and Computer Engineering Publications

The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2 degrees offset toward 2-1-1 surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2 degrees offset toward 2-1-1 surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions …

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Analyzing The Non-Functional Requirements In The Desharnais Dataset For Software Effort Estimation, Ali Bou Nassif, Luiz Fernando Capretz, Danny Ho Aug 2012

Analyzing The Non-Functional Requirements In The Desharnais Dataset For Software Effort Estimation, Ali Bou Nassif, Luiz Fernando Capretz, Danny Ho

Electrical and Computer Engineering Publications

Studying the quality requirements (aka Non-Functional Requirements (NFR)) of a system is crucial in Requirements Engineering. Many software projects fail because of neglecting or failing to incorporate the NFR during the software life development cycle. This paper focuses on analyzing the importance of the quality requirements attributes in software effort estimation models based on the Desharnais dataset. The Desharnais dataset is a collection of eighty one software projects of twelve attributes developed by a Canadian software house. The analysis includes studying the influence of each of the quality requirements attributes, as well as the influence of all quality requirements attributes …

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Privacy Protection Framework With Defined Policies For Service-Oriented Architecture, David S. Allison, Miriam Am Capretz, Hany F. Elyamany, Shuying Wang Mar 2012

Privacy Protection Framework With Defined Policies For Service-Oriented Architecture, David S. Allison, Miriam Am Capretz, Hany F. Elyamany, Shuying Wang

Electrical and Computer Engineering Publications

Service-Oriented Architecture (SOA) is a computer systems design concept which aims to achieve reusability and integration in a distributed environment through the use of autonomous, loosely coupled, interoperable abstractions known as services. In order to interoperate, communication between services is very important due to their autonomous nature. This communication provides services with their functional strengths, but also creates the opportunity for the loss of privacy. In this paper, a Privacy Protection Framework for Service-Oriented Architecture (PPFSOA) is described. In this framework, a Privacy Service (PS) is used in combination with privacy policies to create privacy contracts that outline what can …

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Information Processing With Electron Spins, Supriyo Bandyopadhyay Jan 2012

Information Processing With Electron Spins, Supriyo Bandyopadhyay

Electrical and Computer Engineering Publications

Information processors process information in a variety of ways. The human brain processes information through a highly interconnected system of neurons and synapses, while a digital computer processes information by having a binary switch toggle on and off in response to a stream of binary bits. The “switch” is the most primitive unit of the modern computer. The better it is (faster, more energy efficient, more reliable, etc.), the more advanced is the computer hardware. Energy efficiency, however, is more important than any other attribute, not so much because energy is costly, but because too much energy dissipation prevents increasing …

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Metastable State In A Shape-Anisotropic Single-Domain Nanomagnet Subjected To Spin-Transfer-Torque, Kuntal Roy, Supriyo Bandyopadhyay, Jayasimha Atulasimha Jan 2012

Metastable State In A Shape-Anisotropic Single-Domain Nanomagnet Subjected To Spin-Transfer-Torque, Kuntal Roy, Supriyo Bandyopadhyay, Jayasimha Atulasimha

Electrical and Computer Engineering Publications

We predict the existence of a metastable magnetization state in a single-domain nanomagnet with uniaxial shape anisotropy. It emerges when a spin-polarized current, which delivers a spin-transfer-torque possessing a field-like component, is injected into the nanomagnet. At a metastable state, the internal torque due to nanomagnet's shape anisotropy cancels the externally applied spin-transfer-torque and hence the nettorque acting on the magnetization becomes zero. Therefore, it prevents spin-transfer-torque from switching the magnetization from one stable state along the easy axis to the other, even in the presence of room-temperature thermal fluctuations.

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Degradation And Phase Noise Of Inaln/Aln/Gan Heterojunction Field Effect Transistors: Implications For Hot Electron/Phonon Effects, C. Y. Zhu, M. Wu, C. Kayis, F. Zhang, X. Li, R. A. Ferreyra, A. Matulionis, Vitaliy Avrutin, Umit Ozgur, Hadis Morkoc Jan 2012

Degradation And Phase Noise Of Inaln/Aln/Gan Heterojunction Field Effect Transistors: Implications For Hot Electron/Phonon Effects, C. Y. Zhu, M. Wu, C. Kayis, F. Zhang, X. Li, R. A. Ferreyra, A. Matulionis, Vitaliy Avrutin, Umit Ozgur, Hadis Morkoc

Electrical and Computer Engineering Publications

In15.7%Al84.3%N/AlN/GaN heterojunctionfield effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias stress, off-state-high-field stress, and on-state-high-field stress, in an effort to elaborate on hot electron/phonon and thermal effects. DC current and phase noise have been measured before and after the stress. The possible locations of the failures as well as their influence on the electrical properties have been identified. The reverse-gate-bias stress causes trap generation around the gate area near the surface which has indirect influence on the channel. The off-state-high-field stress and the on-state-high-field stress induce deterioration of the channel, …

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Optical And Structural Studies Of Homoepitaxially Grown M-Plane Gan, S. Khromov, B. Monemar, Vitaliy Avrutin, Xing Li, Hadis Morkoç, L. Hultman, G. Pozina Jan 2012

Optical And Structural Studies Of Homoepitaxially Grown M-Plane Gan, S. Khromov, B. Monemar, Vitaliy Avrutin, Xing Li, Hadis Morkoç, L. Hultman, G. Pozina

Electrical and Computer Engineering Publications

Cathodoluminescence(CL) and transmission electron microscopy studies of homoepitaxiallygrownm-plane Mg-doped GaN layers are reported. Layers contain basal plane and prismatic stacking faults (SFs) with ∼106 cm−1 density. Broad emission peaks commonly ascribed to SFs were found to be insignificant in these samples. A set of quite strong, sharp lines were detected in the same spectral region of 3.36–3.42 eV. The observed peaks are tentatively explained as excitons bound to some impurity defects, which can also be related to SFs. Donor-acceptor pair (DAP) recombination involving Si or O and Mg was ruled out by fitting DAP energies and …

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Anisotropy Of Free-Carrier Absorption And Diffusivity In M-Plane Gan, P. Ščajev, K. Jarašiūnas, U. Ozgur, Hadis Morkoç, J. Leach, T. Paskova Jan 2012

Anisotropy Of Free-Carrier Absorption And Diffusivity In M-Plane Gan, P. Ščajev, K. Jarašiūnas, U. Ozgur, Hadis Morkoç, J. Leach, T. Paskova

Electrical and Computer Engineering Publications

Polarization-dependent free-carrier absorption (FCA) in bulk m-plane GaN at 1053 nm revealed approximately 6 times stronger hole-related absorption for E⊥c than for E||c probe polarization both at low and high carrier injection levels. In contrast, FCA at 527 nm was found isotropic at low injection levels due to electron resonant transitions between the upper and lower conduction bands, whereas the anisotropic impact of holes was present only at high injection levels by temporarily blocking electron transitions. Carrier transport was also found to be anisotropic under two-photon excitation, with a ratio of 1.17 for diffusivity perpendicular and parallel to the c-axis.

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Improved Quantum Efficiency In Ingan Light Emitting Diodes With Multi-Double-Heterostructure Active Regions, X. Li, Serdal Okur, F. Zhang, S. A. Hafiz, Vitaliy Avrutin, Umit Ozgur, Hadis Morkoç, K. Jarašiūnas Jan 2012

Improved Quantum Efficiency In Ingan Light Emitting Diodes With Multi-Double-Heterostructure Active Regions, X. Li, Serdal Okur, F. Zhang, S. A. Hafiz, Vitaliy Avrutin, Umit Ozgur, Hadis Morkoç, K. Jarašiūnas

Electrical and Computer Engineering Publications

InGaN light emitting diodes(LEDs) with multiple thin double-heterostrucutre (DH) active regions separated by thin and low energy barriers were investigated to shed light on processes affecting the quantum efficiency and means to improve it. With increasing number of 3 nm-thick DH active layers up to four, the electroluminescence efficiency scaled nearly linearly with the active region thickness owing to reduced carrier overflow with increasing total thickness, showing almost no discernible efficiency degradation at high injection levels up to the measured current density of 500 A/cm2. Comparison of the resonant excitation dependent photoluminescence measurements at 10 K and room …

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