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Articles 151 - 156 of 156
Full-Text Articles in Other Chemical Engineering
Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. J. Long, O. O. Famodu, M. Murakami, Jason R. Hattrick-Simpers, G. W. Rubloff, M. Stukowski, K. Rajan
Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. J. Long, O. O. Famodu, M. Murakami, Jason R. Hattrick-Simpers, G. W. Rubloff, M. Stukowski, K. Rajan
Faculty Publications
We discuss techniques for managing and visualizing x-ray diffraction spectrum data for thin film composition spreads which map large fractions of ternary compositional phase diagrams. An in-house x-ray microdiffractometer is used to obtain spectra from over 500 different compositions on an individual spread. The MATLAB software is used to quickly organize the data and create various plots from which one can quickly grasp different information regarding structural and phase changes across the composition spreads. Such exercises are valuable in rapidly assessing the “overall” picture of the structural evolution across phase diagrams before focusing in on specific composition regions for detailed …
Etching With Electron Beam Generated Plasmas, D. Leonhardt, Scott G. Walton, Christopher Muratore, Richard F. Fernsler, R. A. Meger
Etching With Electron Beam Generated Plasmas, D. Leonhardt, Scott G. Walton, Christopher Muratore, Richard F. Fernsler, R. A. Meger
Chemical and Materials Engineering Faculty Publications
A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was …
Effect Of Plasma Flux Composition On The Nitriding Rate Of Stainless Steel, Christopher Muratore, Scott G. Walton, D. Leonhardt, Richard F. Fernsler, David D. Blackwell, R. A. Meger
Effect Of Plasma Flux Composition On The Nitriding Rate Of Stainless Steel, Christopher Muratore, Scott G. Walton, D. Leonhardt, Richard F. Fernsler, David D. Blackwell, R. A. Meger
Chemical and Materials Engineering Faculty Publications
The total ion flux and nitriding rate for stainless steel specimens exposed to a modulated electron beam generated argon-nitrogen plasma were measured as a function of distance from the electron beam axis. The total ion flux decreased linearly with distance, but the nitriding rate increased under certain conditions, contrary to other ion flux/nitriding rate comparisons published in the literature. Variation in ion flux composition with distance was explored with a mass spectrometer and energy analyzer as a possible explanation for the anomalous nitriding rate response to ion flux magnitude. A transition in ion flux composition from mostly N2 1 to …
Multimode Quantitative Scanning Microwave Microscopy Of In Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, Jason R. Hattrick-Simpers, H. Chang
Multimode Quantitative Scanning Microwave Microscopy Of In Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, Jason R. Hattrick-Simpers, H. Chang
Faculty Publications
We have performed variable-temperature multimode quantitative microwavemicroscopy of in situepitaxial Ba1−xSrxTiO3 thin-film composition spreads fabricated on (100) LaA1O3 substrates. Dielectric properties were mapped as a function of continuously varying composition from BaTiO3 to SrTiO3. We have demonstrated nondestructive temperature-dependent dielectric characterization of local thin-film regions. Measurements are simultaneously taken at multiple resonant frequencies of the microscope cavity. The multimode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric relaxation in Ba1−xSrxTiO3 at microwave frequencies.
Development Of A Curved Layer Lom Process For Monolithic Ceramics And Ceramic Matrix Composites, Donald A. Klosterman, Richard P. Chartoff, Nora R. Osborne, George A. Graves, Allan Lightman, Gyoowan Han, Akos Bezewredi, Stan Rodrigues, Sung Pak, Gary Kalmanovich, Leon Dodin, Song Tu
Development Of A Curved Layer Lom Process For Monolithic Ceramics And Ceramic Matrix Composites, Donald A. Klosterman, Richard P. Chartoff, Nora R. Osborne, George A. Graves, Allan Lightman, Gyoowan Han, Akos Bezewredi, Stan Rodrigues, Sung Pak, Gary Kalmanovich, Leon Dodin, Song Tu
Chemical and Materials Engineering Faculty Publications
A novel rapid prototyping technology incorporating a curved layer building style was developed. The new process, based on Laminated Object Manufacturing (LOM), was designed for efficient fabrication of curved layer structures made from ceramics and fiber reinforced composites. A new LOM machine was created, referred to as Curved Layer LOM. This new machine uses ceramic tapes and fiber prepregs as feedstocks and fabricates curved structures on a curved-layer by curved-layer basis. The output of the process is a three dimensional "green" ceramic that is capable of being processed to a seamless, fully dense ceramic using traditional techniques. A detailed description …
Derivation Of An Analytical Model To Calculate Junction Depth In Hgcdte Photodiodes, Stacy H. Gleixner, H. G. Robinson, C. R. Helms
Derivation Of An Analytical Model To Calculate Junction Depth In Hgcdte Photodiodes, Stacy H. Gleixner, H. G. Robinson, C. R. Helms
Faculty Publications
Presents an enhanced analytical model to calculate junction depth and Hg interstitial profile during n-on-p junction formation in HgCdTe photodiodes. Detailed information on the enhanced model; Function of the model; Information on HgCdTe; Detailed information on how the model was obtained.