Engineering Commons^™

Anodic Polarization Behaviors Of Carbon Steel In Bicarbonate Solution, Jing-Mao Zhao, Yu Zuo

Journal of Electrochemistry

The anodic polarization curves of mild steel were measured in sodium bicarbonate solution of various concentrations, and the surface products were analyzed by XPS. Two anodic current peaks and two passive zones are observed in all the curves. When HCO₃^- ions concentration is below 0.1mol/L, the two peaks are so close that the first passive zone is difficult to be observed. When HCO₃^- ions concentration is above 0.1 mol/L, the first peak appears clear, while the second becomes smaller. The XPS results indicate that the out layer of film formed at a higher potential is mainly …

Preparation And Characterization Of Lini0.85Co0.10(Timg)0.025O2 As Cathode Materials For Lithium-Ion Batteries, Xian-Jun Zhu, Hong-Hao Chen, Hui Zhan, Dai-Ling Yang, Yun-Hong Zhou

Journal of Electrochemistry

Cathode material of LiNi_0.85Co_0.10(TiMg)_0.025O₂ were prepared by solid state reaction at 725℃ for 24 h from LiOH·H₂O, Ni₂O₃, Co₂O₃, TiO₂ and Mg(OH)₂ under flowing oxygen, and were characterized by TG-DTA, XRD, SEM and electrochemical tests. Effort to simultaneously doped LiNiO₂ with Co-Ti-Mg has been tried to improve the cathode performance. The results show that co-doping definitely has a large beneficial effect in increasing the capacity (182.7mAh/g of the first discharge capacity for  LiNi_0.85Co_0.10(TiMg)_0.025O_{2 …}

Corrosion Resistance For Tio2 Thin Films Coated 316l Stainless Steel In The Nacl Solution, Guang-Xia Shen, Yi-Cong Chen, Chang-Jian Lin

Journal of Electrochemistry

The nano-TiO₂ thin films have been deposited on the 316L stainless steel by sol-gel and the dip-coating methods. Hydrothermal post-treatment leads to crack-free coatings. Meanwhile, the surface structure and properties are optimized. Surface morphology, structure and properties are characterized by XRD, and SEM technologies. The results have shown that the surface of coatings is porous, uniform and orderly, the particle diameters are in the range of 15~18 nm and the pores are about 4~8 nm and TiO₂ is anatase. The results of electrochemical measurements show that in the NaCl solution with pH ≥ 2 and concentration below 1mol/L, …

Studies On Polymer Light-Emitting Electrochemical Cells ——Introduction Of The Studies On The Electrochemistry Of Conducting Polymers In Cas Key Laboratory Of Organic Solids (Ⅱ), Yong-Fang Li

Journal of Electrochemistry

Polymer light-emitting electrochemical cell (LEC) is composed of a conjugated polymer(CP)/polymer electrolyte blend film sandwiched between an ITO anode and an Al cathode. When a bias voltage greater than Eg/e (where Eg is the energy gap of the CP, e is the electron charge) is applied on the two electrodes, the CP in the polymer blend film at the anode side will be oxidized (to form a p-doped region), and that at the cathode side will be reduced (to form a n-doped region), then a p-i-n junction will be produced. Light-emission occurs in the intrinsic region between the p- and …

Corrosion Behavior Of Mg2-XLaXNi And Mg2-XCeXNi Hydrogen Storage Alloy, Hai-Chang Zhang, Hua-Bin Yang, Jun-Hong Wang, Zuo-Xiang Zhou

Journal of Electrochemistry

The corrosion behavior of Mg-base hydrogen storage alloys has been investigated by potentiodynamic polarization and EIS. The results showed that the corrosion current density (i_corr) and the electrochemical polarized resistance of Mg_2-xCe_xNi alloys decreased with x increase, while i_corr of Mg_2-xLa_xNi alloys increased and the electrochemical polarized resistance of Mg_2-xLa_xNi alloys increased first, then decreased with x increase. SEM results showed that the surface of Mg_1.85Ce_0.15Ni alloy was relatively even while the surface of Mg_2-xLa_xNi alloy had …

A Study Of Metal Borides As High Capacity Anode Materials For Aqueous Primary Batteries, Ya-Dong Wang, Xin-Ping Ai, Han-Xi Yang

Journal of Electrochemistry

The transition metal borides VB₂ and TiB₂ were tested as high capacity anode materials and their electrochemical behaviors were studied by cyclic voltammetry and discharge measurements. The experimental results indicated that transition metal borides VB₂ and TiB₂ electrodes can deliver exceptionally high discharge capacity of over 3100 mAh/g and 1 600 mAh/g respectively, corresponding to 11- and 6-electron oxidation reaction, although their parent elements V, Ti and boron, are almost completely electrochemically inert. The different electrochemical activitis were probably due to the electrochemical activation of boron, which clamp the potential to passivation for Ti and activity …

Electrochemical Performance Of Gel Polymer Electrolyte Prepared By Thermal Initiating Polymerization Of Acrylates, Jin-Dan Piao, Li-Xia Yuan, Xin-Ping Ai, Han-Xi Yang, Yu-Liang Cao

Journal of Electrochemistry

A gel polymer electrolyte was prepared by thermal initiating polymerization of the acrylates in the EC/EMC/DMC electrolyte solution at 100℃. The LiCoO₂/MCMB polymer cells were assembled and their electrochemical properties were evaluated at various charge-discharge rate and temperatures. The ionic conductivity of the polymer electrolyte containing 85wt.% liquid electrolyte is around 3.2×10^-3 S·cm^-1  at 20℃ and 5.6×10^-4 S·cm^-1 at -30℃ respectively. The gel polymer electrolyte has good electrochemical stability up to 4.5V versus Li/Li⁺.The first charge-discharge efficiency of the polymer cell at 0.2C rate is almost 92.1%. The discharge capacity of the …

Application Of Carbon Paste Electrode On The Electrogenerative-Leaching Process Of Sulfide Minerals, Shao-Fen Wang, Zheng Fang, Yun-Yan Wang

Journal of Electrochemistry

The cyclic voltammetry curves of sulfide mineral electrodes or corresponding carbon paste electrodes in NaCl electrolytes have been obtained in this study. The experimental results indicate that acetylene black (revealed) the electro-catalytic propertyin the electrogenerative-leaching process of sulfide minerals. The output currentand potential of carbon paste electrodes were increased to some degrees while the activation energies were lower.

Preparation And Electrochemical Property Of Aao Nano-Channels Filled With Nio, Chi Gu, Jun-Mei Yan, Yong Yang

Journal of Electrochemistry

The AAO template with nano-channels was synthesized and filled with transient metal-oxide NiO by sol-gel method, and their electrochemical properties were primarily studied. The results showed that the porous nano-channels were well defined with the diameter about 50nm. The nano-structured NiO was filled into the template's nano-channels successfully. Cyclic voltammetry studies show that the NiO in AAO template has good cycle stability. It was suggested that the AAO-metal-oxides composites could be used as novel anode materials for Lithium ion battery.

Preparation Of Poly (Bromophenol Blue) Modified Glassy Carbon Electrode And Its Electrocatalytic Activity, Wei Chen, Hong-Bin Luo, Xin-Hua Lin

Journal of Electrochemistry

A film of poly (bromophenol blue) was formed on a glassy carbon electrode by using cyclic voltammetry. A stable film could be obtained with a potential range from -1.0 V to +1.8 V (vs.Ag/AgCl). The experimental results showed that the poly (bromophenol blue) modified glassy carbon electrode could catalyse the oxidation of ascorbic acid. It decreased the oxidation potential by about 270mV but increased the peak current. Meanwhile, this electrode showed a good linear current response for the ascorbic acid range from 2.5 to 250 (g/mL).

Electrochemical Properties Of Polymeric Gel Electrolyte With Gbl/Ec As Plasticizers, Yu-Wen Liu, Yong Zhang, Xiao-Long Li, Qi-Ping Gu, Cui-Fen Zhang, Yu-Dong Huang

Journal of Electrochemistry

Polymeric gel electrolytes (GPE) based on PMMA and PVDF-HFP were prepared using the binary mixtures of γ-butyrolactone (GBL) and ethylene carbonate (EC) as plasticizers. The ionic transport properties and electrochemical stability were studied. The room temperature conductivity reached 1.2 mS·cm^-1, electrochemical stability window exceeded 4.5V. The interfacial stability between GPE and lithium electrode was also investigated. The lithium metal polymer battery (LMPB) prepared with the GPE showed better charge and discharge life cycle when the the lithium metal electrode was treated with 1,4-dioxane.

Research On Phenol Wastewater Treatment By Electrochemical Oxidation, Tian-Cheng Li, Shen-Lin Zhu

Journal of Electrochemistry

Electrochemical oxidation is an effective technology for the phenol wastewater treatment, and the anode properties are important to the electrochemical oxidationefficiency. The over-potentials of oxygen evolution have been measured for thestainless steel, feasible graphite and SnO₂/Ti anode respectively. Moreover, the synthetic phenol wastewater was treated by the electrochemical oxidation with the stainless steel or feasible graphite anodes. The experimental results showed that the order of the over-potential is SnO₂/Ti > graphite > stainless steel; meanwhile, the COD values of purified water were approaching to or less than 100 mg·L^-1, and the phenol concentrations in the purified …

Calcium Zincate Prepared By Ball Mill Method, Sheng-Xian Li, Shuan-Bao Tian, Shao-Shan Zhu

Journal of Electrochemistry

Calcium zincate was prepared by ball milling method and the factors that influence its synthesis were investigated. The composition of the compound was Ca(OH)₂·2Zn(OH)_2^·2H₂O, which was verified by XRD and TG-DTA methods. The results of powder microelectrode and in simulated batteries showed that the material had excellent cyclic performance.

Influence Of Rare Earth Oxide On The Performance Of Secondary Zinc Electrodes, Xian-Ling Meng, Hua-Bin Yang, Jun-Hong Wang, Zuo-Xiang Zhou

Journal of Electrochemistry

Influence of La(OH)₃ or Ce(OH)₃ in secondary zinc electrode was investigated by the cyclic voltammetry, potentiodynamic polarizationand potentiostatic polarization tests and influence of La₂O₃ or CeO₂ in the charge/discharge performance of Zn/Ni battery was studied by galvanostatic charge/discharge experiment. The results showed that the film of rare earth hydroxide prevented the zincate species from transferring toward solution, enhanced hydrogen overpotential and decreased thecorrosion current density (i_corr), and therefore inhibited zinc corrosion. The potentiostatic polarization results at100mV overpotential showed that La(OH)₃ or Ce(OH)₃ oated on the zinc electrode effectively suppressed the …

The Fabrication And Electrochemical Studies On Carbon Nanotube Array Electrodes, Quan-Yong Gao, Jing Zhang, Yong Yang

Journal of Electrochemistry

An improved technique for fabrication of carbon nanotube array electrodes has been proposed in this work. Firstly, carbon nanotubes (CNs) array electrodes were prepared by combsination of Chemical Vapor Decomposition (CVD) method and sputtering techniques in anodized aluminum oxide (AAO) membrane. The CNs/AAO was immersed into HF solution to remove the barrier layer. Controlling the immersing time, the CNs array electrodes with different length contacted with electrolyte can be prepared. The morphology of CNs array electrodes was observed by SEM. The electrochemical properties of CNs array electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy. Cyclic voltammetric curves of …

Fabrication And Studies Of A Novel Ag/Agcl Reference Electrode In High Temperature Molten Chloride Salts, Pei Gao, Xian-Bo Jin, Di-Hua Wang, Xiao-Hong Hu, Zheng Chen

Journal of Electrochemistry

A new method for the easy fabrication of a stable and long life silver/silver chloride reference electrode in molten chloride salts is described in this paper. The method is based on the fact that simply placing the silica glass in molten NaCl or its vapour in the presence of oxygen resulted in satisfactory conductivity for sodium ion and possibly calcium ion in the material.The performance of such made electrode has been investigated in a few typical chloride systems at temperatures ranging from 400 to 900℃. Due to the wholly sealed construction, the reference electrode is stable, temperature-reversible, contamination free to …

The Electrophoretic Deposition Of Nano Hydroxyapatite Coating On Titanium Surface, Fei Chen, Chang-Jian Lin, Zhou-Cheng Wang

Journal of Electrochemistry

A hydroxyapatite coating with nano-structure on the roughened titanium surface was prepared by electrophoretic deposition process. To decrease sintering temperature the HAp nanoparticles synthesizedby a wet chemical method was used. It is observed that the coating is uniform without cracks. After sintering the nano-strueture of HAp coating remains unchanged. The surface treatment of Ti is applied to form a distribution of small pits and TiO₂ thin layer that improve the adhesion of coatingto Ti substrate. It is shown that the bonding strength of coating is as high as 18±2.5MPa. The hardness and Young's modulus are 40.6 and 0.42 GPa, …

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Integration Of High-K Dielectrics And Metal Gates Into Submicron Nmos Transistors At Rit, Daniel J. Jaeger

Journal of the Microelectronic Engineering Conference

Zirconium oxide, a high-k gate dielectric, and molybdenum, a refractory metal, were successfully integrated into an existing submicron NMOS transistor process at RIT. Submicron high-k gate dielectric metal gate transistors were produced as a result of this project, and electrical characteristics were compared to reference submicron transistors fabricated with 75 A silicon dioxide gate dielectrics and polysilicon gates.

Nmos Transistors Design And Fabrication For S-Parameter Extraction, Adam L. James

Journal of the Microelectronic Engineering Conference

A successful test layout for S-parameter analysis was demonstrated. Process characterization accomplished as part of this project demonstrated a pseudo-shallow trench isolation. Active device measurements would have been possible with a DC blocking fixture. 0.37 μm-I.0 μm transistors were fabricated with a non-ideal characteristic which i~as due to the source drain implant being blocked by oxide residue from the spacer formation etch.

Esaki Tunnel Diodes Formed By Proximity Rapid Thermal Diffusion, Raymond T. Krom Iii

Journal of the Microelectronic Engineering Conference

For the first time tunnel diodes have been fabricated by Proximity Rapid Thermal Diffusion (PRTD) using spin on sources and the AG Associates 610 Rapid Thermal Annealing Furnace (RTA) at RIT. Initial devices revealed a maximum peak-to-valley current ratio (PVCR) of 1.3 with a peak current density (J_p) of l6mA/cm² at 300K. A second-generation design involving proximity diffusion of Boron and Phosphorous resulted in a higher J_p, of 3A/cm² and an elevated PVCR of 1.97 at 300K. The increased performance is attributed to closer matching of the doping profiles via the phosphorous proximity anneal. …

Field Induced Band-To-Band Tunneling Effect Transistor (Fibtet), David Pawlik

Journal of the Microelectronic Engineering Conference

A field Induced Band to Band Tunneling Effect Transistor was designed, fabricated and tested. The devices are to take the shape of finFETs and plainer devices i~hich will employ mesa isolation technology. Degenerate dopings were achieved through the use of proximity diffusion in a rapid thermal processing tool. Final results include design parameters, fabrication parameters, fabrication techniques, SEM Images, electrical test results & analysis, and areas of continuing work.

Printing Of Contact Holes For The 45nm Generation Using Immersion Interference Lithography, Michael A. Slocum

Journal of the Microelectronic Engineering Conference

Interference lithography is a valuable tool for evaluating photoresist performance at the resolutions unattainable with conventional exposure tools. interference lithography is most commonly used to generate one dimensional patterns such as lines and spaces. however two dimensional patterns are of much greater interest to both the resist developers and the device manufacturers in microlithography. This paper presents a technique to produce two dimensional images of contact holes at the resolution of 45nm half pitch. To our knowledge this is the highest resolution contacts printed to date using 193nm radiation. Photoresist patterns with a half-pitch of 45 nm were formed with …

In-Situ Aberration Metrology Using Phase Wheel Targets, Matthew M. Mcquillan

Journal of the Microelectronic Engineering Conference

Aberration metrology and monitoring of lithography projection systems in the semiconductor industry are becoming more important as today’s ICs are printed at sub-100 nm resolution. All lenses suffer from lens aberrations and it is important that the lithographer knows which aberration and the magnitude of the aberration in order to understand its impact on the process window and resolution limitations. A technique and process to recognize and measure lens aberrations in-situ has been developed using a phase wheel target at 157nm and 193nm lithography. This project will use the phase wheel target technique to extend aberration monitoring into i-line lithography …

Characterization And Optimization Of A Bi-Layer Barc, Ryan M. Stamp

Journal of the Microelectronic Engineering Conference

Standing wave effects have been seen throughout the history of microlithography. Due to standing wave effects, the line width control of imaged lines in photoresist is compromised. A technology that has emerged as strong solution for the reduction of standing wave effects is a Bottom Antireflective Coating (BARC) that is deposited onto the wafer before the photoresist deposition. By reducing the substrate reflectivity, the standing wave effects can also be reduced dramatically.

The 193 nm photoresist and the bi-layer BARC films were characterized and then optimized to reduce standing wave effects within the 193 nm photoresist. A bi-layer BARC film …

Optical Modulation In Silicon And The Orpel Device, Robin A. Joyce

Journal of the Microelectronic Engineering Conference

Optical modulation is discussed and ORPEL, an optical modulation device in silicon, is presented. A paradigm for signal modulation is theorized and reflectance spectra are presented showing a “resonance” condition. In addition, an analysis of failures during device processing is given.

Electromigration Testing At Rit: Thermal Test Development, Lance W. Barron

Journal of the Microelectronic Engineering Conference

An electromigration (EM) test mask was designed to utilize both standard ASTM and Standard Wafer-level Electromigration Accelerated Test Structures (SWEAT) fourterminal EM test structures of varying line-widths. The mask was used to pattern 4” test wafers consisting of 300 nm of sputtered aluminum-1% silicon on a thermal SiO2 layer. A custom thermal setup was developed for a Micromanipulator 6000 manual probe station. A new 4” brass chuck was machined to include cooling channels, wafer vacuum, and a thermocouple monitoring system. A resistive ring heater was bonded to the chuck and was controlled via a process temperature controller. Extensive electrical test …

Characterization Of Low Temperature Gate Dielectrics For Thin Film Transistors, G Robert Mulfinger

Journal of the Microelectronic Engineering Conference

The goal of this investigation was to ascertain a viable low temperature gate dielectric for an emerging TFT fabrication process at RIT. Various candidates were investigated to find the best solution for a low temperature gate dielectric. Materials studied include low temperature oxide (LTO) using low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD) silicon nitride, and PECVD Tetra Ethyl Ortho Silicate (TEOS). Capacitors were fabricated with these materials, as well as a standard thermal oxide as a control. Wafers were examined both with and without anneals at 600°C in order to study bulk oxide and interface …

Low Temperature Dopant Activation, Eric Woodard

Journal of the Microelectronic Engineering Conference

A major area of research for integrated electronic systems is the development of systems on glass or plastic to optimize the performance/cost tradeoff. These new substrate materials impose significant constraints on electronic device fabrication, including limitations on chemical and thermal processes. Processes that do not use high temperatures have the increased flexibility needed to be used on new substrate materials. Amorphous silicon thin-film transistors (TFTs) have been fabricated at temperatures below 300°C, where in-situ doped layers are deposited to form the electrode regions. Unfortunately, the electrical activation and carrier mobility in these devices is exceedingly low. The conventional method of …

Integration Of Nickel Monosilicide (Nisi) Into An Rit Smfl Nmos Device, Phu Do

Journal of the Microelectronic Engineering Conference

A nickel silicidation process has been developed for the Semiconductor & Microsystems Fabrication Laboratory (SM FL) at Rochester Institute of Technology (RIT). NISI and Ni₂Si were obtained in doped source/drain and polysilicon gate regions respectively at rapid thermal annealing (RTA) condition of 500°C for 60 seconds. The sheet resistance of nickel silicide in both regions was measured to be 0.45Ω/o — 0.5Ω/o. Nickel silicide was also integrated into an RIT NMOSFET process where silicide was formed over the S/D and polysilicon gate regions. Rutherford Backscatter and x-ray diffraction data showed the formation of NiSi phase in the S/D …