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University of Nebraska - Lincoln

Engineering Physics

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Full-Text Articles in Physics

Noncollinear Spin Structure In Fe3+Xco3−Xti2 (X = 0, 2, 3) From Neutron Diffraction, Haohan Wang, Balamurugan Balamurugan, Rabindra Pahari, Ralph Skomski, Yaohua Liu, Ashfia Huq, D. J. Sellmyer, Xiaoshan Xu Jan 2019

Noncollinear Spin Structure In Fe3+Xco3−Xti2 (X = 0, 2, 3) From Neutron Diffraction, Haohan Wang, Balamurugan Balamurugan, Rabindra Pahari, Ralph Skomski, Yaohua Liu, Ashfia Huq, D. J. Sellmyer, Xiaoshan Xu

Xiaoshan Xu Papers

Neutron powder diffraction has been used to investigate the spin structure of the hard-magnetic alloy Fe3+xCo3−xTi2 (x = 0, 2, 3). The materials are produced by rapid quenching from the melt, they possess a hexagonal crystal structure, and they are nanocrystalline with crystallite sizes D of the order of 40 nm. Projections of the magnetic moment onto both the crystalline c axis and the basal plane were observed. The corresponding misalignment angle exhibits a nonlinear decrease with x, which we explain as a micromagnetic effect caused by Fe-Co site disorder. The underlying physics is ...


Nonvolatile Voltage Controlled Molecular Spin State Switching, G. Hao, A. Mosey, X. Jiang, A. J. Yost, K. R. Sapkota, G. T. Wang, X. Zhang, J. Zhang, A. T. N'Diaye, R. Cheng, X. Xu, P. A. Dowben Jan 2019

Nonvolatile Voltage Controlled Molecular Spin State Switching, G. Hao, A. Mosey, X. Jiang, A. J. Yost, K. R. Sapkota, G. T. Wang, X. Zhang, J. Zhang, A. T. N'Diaye, R. Cheng, X. Xu, P. A. Dowben

Xiaoshan Xu Papers

Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H2B(pz)2}2(bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C5H2O5), appears to lock the spin crossover [Fe{H2B(pz)2}2(bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and ...


Unusual Perpendicular Anisotropy In Co2Tisi Films, Yunlong Jin, Shah R. Valloppilly, Parashu R. Kharel, Rohit Pathak, Arti Kashyap, Ralph Skomski, David J. Sellmyer Jan 2019

Unusual Perpendicular Anisotropy In Co2Tisi Films, Yunlong Jin, Shah R. Valloppilly, Parashu R. Kharel, Rohit Pathak, Arti Kashyap, Ralph Skomski, David J. Sellmyer

David Sellmyer Publications

Thin films of Co2TiSi on MgO are investigated experimentally and theoretically. The films were produced by magnetron sputtering on MgO(001) and have a thickness of about 100 nm. As bulk Co2TiSi, they crystallize in the normal cubic Heusler (L21) structure, but the films are slightly distorted (c/a = 1.0014) and contain some antisite disorder. The films exhibit a robust perpendicular anisotropy of 0.5 MJ m3. This result is surprising for several reasons. First, surface and interface anisotropies are too small to explain perpendicular anisotropy in such rather thick films. Second, Co ...


Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov Oct 2018

Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov

Kirill Belashchenko Publications

A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching


Large T1 Contrast Enhancement Using Superparamagnetic Nanoparticles In Ultra-Low Field Mri, Xiaolu Yin, Stephen E. Russek, Gary Zabow, Fan Sun, Jeotikatan Mohapatra, Kathryn E. Keenan, Michael A. Boss, Hao Zeng, J. Ping Liu, Alexandrea Viert, Sy-Hwang Liou, John Moreland Aug 2018

Large T1 Contrast Enhancement Using Superparamagnetic Nanoparticles In Ultra-Low Field Mri, Xiaolu Yin, Stephen E. Russek, Gary Zabow, Fan Sun, Jeotikatan Mohapatra, Kathryn E. Keenan, Michael A. Boss, Hao Zeng, J. Ping Liu, Alexandrea Viert, Sy-Hwang Liou, John Moreland

Faculty Publications from Nebraska Center for Materials and Nanoscience

Superparamagnetic iron oxide nanoparticles (SPIONs) are widely investigated and utilized as magnetic resonance imaging (MRI) contrast and therapy agents due to their large magnetic moments. Local field inhomogeneities caused by these high magnetic moments are used to generate T2 contrast in clinical high-field MRI, resulting in signal loss (darker contrast). Here we present strong T1 contrast enhancement (brighter contrast) from SPIONs (diameters from 11 nm to 22 nm) as observed in the ultra-low field (ULF) MRI at 0.13 mT. We have achieved a high longitudinal relaxivity for 18 nm SPION solutions, r1 = 615 s−1 mM−1, which ...


Nanostructural Origin Of Semiconductivity And Large Magnetoresistance In Epitaxial Nico2O4/Al2O3 Thin Films, Congmian Zhen, Xiaozhe Zhang, Wengang Wei, Wenzhe Guo, Ankit Pant, Xiaoshan Xu, Jian Shen, Li Ma, Denglu Hou Mar 2018

Nanostructural Origin Of Semiconductivity And Large Magnetoresistance In Epitaxial Nico2O4/Al2O3 Thin Films, Congmian Zhen, Xiaozhe Zhang, Wengang Wei, Wenzhe Guo, Ankit Pant, Xiaoshan Xu, Jian Shen, Li Ma, Denglu Hou

Xiaoshan Xu Papers

Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo ...


Honeycomb Lattice Na2iro3 At High Pressures: A Robust Spin-Orbit Mott Insulator, Xiaoxiang Xi, Xiangyan Bo, X. S. Xu, P. P. Kong, Z. Liu, X. G. Hong, C. Q. Jin, G. Cao, Xiangang Wan, G. L. Carr Jan 2018

Honeycomb Lattice Na2iro3 At High Pressures: A Robust Spin-Orbit Mott Insulator, Xiaoxiang Xi, Xiangyan Bo, X. S. Xu, P. P. Kong, Z. Liu, X. G. Hong, C. Q. Jin, G. Cao, Xiangang Wan, G. L. Carr

Xiaoshan Xu Papers

The honeycomb iridate Na2IrO3 has received much attention as a candidate to realize a quantum spin liquid state, but the nature of its insulating state remains controversial. We found that the material exhibits structural transitions at 3 and 10 GPa. The former is accompanied by 166-meV suppression of the activation gap, but the energies for the low-lying interband transitions change by less than 10 meV. This can be reconciled in a picture in which the application of high pressure barely shifts the electronic bands, but rather merely broadens them. First-principles calculations uncover a strong correlation between the ...


Tuning The Neel Temperature Of Hexagonal Ferrites By Structural Distortion, Kishan Sinha, Haohan Wang, Xiao Wang, Liying Zhou, Yuewei Yin, Wenbin Wang, Xuemei Cheng, David J. Keavney, Huibo Cao, Yaohua Liu, Xifan Wu, Xiaoshan Xu Jan 2018

Tuning The Neel Temperature Of Hexagonal Ferrites By Structural Distortion, Kishan Sinha, Haohan Wang, Xiao Wang, Liying Zhou, Yuewei Yin, Wenbin Wang, Xuemei Cheng, David J. Keavney, Huibo Cao, Yaohua Liu, Xifan Wu, Xiaoshan Xu

Xiaoshan Xu Papers

To tune the magnetic properties of hexagonal ferrites, a family of magnetoelectric multiferroic materials, by atomic-scale structural engineering, we studied the effect of structural distortion on the magnetic ordering temperature (TN) in these materials. Using the symmetry analysis, we show that unlike most antiferromagnetic rare-earth transition-metal perovskites, a larger structural distortion leads to a higher TN in hexagonal ferrites and manganites, because the K3 structural distortion induces the three-dimensional magnetic ordering, which is forbidden in the undistorted structure by symmetry. We also revealed a nearlinear relation between TN and the tolerance factor and a power-law relation ...


Towards A Strong Spin–Orbit Coupling Magnetoelectric Transistor, Peter Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov Jan 2018

Towards A Strong Spin–Orbit Coupling Magnetoelectric Transistor, Peter Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov

Peter Dowben Publications

Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin–orbit coupling (SOC). The emphasis of the ME spin field-effect transistors (ME spin FET) is on an antiferromagnet spin–orbit read logic device and a ME spin-FET multiplexer. Both spin-FET schemes exploit the strong SOC in the semiconducting channel materials but remain dependent on the voltage-induced switching of an ME, so that the switching time is limited only by the switching dynamics of the ME. The induced exchange ...


A Brief Review Of Ferroelectric Control Of Magnetoresistance In Organic Spin Valves, Xiaoshan Xu Jan 2018

A Brief Review Of Ferroelectric Control Of Magnetoresistance In Organic Spin Valves, Xiaoshan Xu

Xiaoshan Xu Papers

Magnetoelectric coupling has been a trending research topic in both organic and inorganic materials and hybrids. The concept of controlling magnetism using an electric field is particularly appealing in energy efficient applications. In this spirit, ferroelectricity has been introduced to organic spin valves to manipulate the magneto transport, where the spin transport through the ferromagnet/organic spacer interfaces (spinterface) are under intensive study. The ferroelectric materials in the organic spin valves provide a knob to vary the interfacial energy alignment and the interfacial crystal structures, both are critical for the spin transport. In this review, we introduce the recent efforts ...


Indications Of Magnetic Coupling Effects In Spin Cross-Over Molecular Thin Films, Xin Zhang, Alpha T. N'Diaye, Xuanyuan Jiang, Xiaozhe Zhang, Yuewei Yin, Xuegang Chen, Xia Hong, Xiaoshan Xu, Peter Dowben Jan 2018

Indications Of Magnetic Coupling Effects In Spin Cross-Over Molecular Thin Films, Xin Zhang, Alpha T. N'Diaye, Xuanyuan Jiang, Xiaozhe Zhang, Yuewei Yin, Xuegang Chen, Xia Hong, Xiaoshan Xu, Peter Dowben

Xia Hong Publications

Room temperature isothermal reversible spin crossover switching of [Fe(H2B(pz)2)2(bipy)] thin films is demonstrated. The magnetic oxide substrate locks the [Fe{H2B(pz)2}2(bipy)] largely in a low spin state. With an X-ray fluence, excitation to a high spin state occurs, while relaxation back to low spin state is aided by alternating the substrate magnetization.

Includes supplementary materials.


Magneto-Electric Logic Devices Using Semiconductor Channel With Large Spin-Orbit Coupling (U.S. Patent Application), Dmitri E. Nikonov, Christian Binek, Xia Hong, Jonathan P. Bird, Kang L. Wang, Peter Dowben Jan 2018

Magneto-Electric Logic Devices Using Semiconductor Channel With Large Spin-Orbit Coupling (U.S. Patent Application), Dmitri E. Nikonov, Christian Binek, Xia Hong, Jonathan P. Bird, Kang L. Wang, Peter Dowben

Faculty Publications, Department of Physics and Astronomy

Antiferromagnetic magneto-electric spin-orbit read (AF-SOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.


Magnetocrystalline Anisotropy Of "-Fe2o3, Imran Ahamed, Rohilt Pathak, Arti Kashyap Dec 2017

Magnetocrystalline Anisotropy Of "-Fe2o3, Imran Ahamed, Rohilt Pathak, Arti Kashyap

Faculty Publications from Nebraska Center for Materials and Nanoscience

The epsilon Fe2O3 phase of iron oxide has been studied to understand the spin structure and the magnetocrystalline anisotropy in the bulk and in thin films of "-Fe2O3 and Co-doped "-Fe2O3. The preferential magnetization direction in the nanoparticles of "-Fe2O3 is along the a-axis [M. Gich et al., Chem. Mater. 18, 3889 (2006)]. Compared to the bulk band gap of 1.9 eV, the thin-film band gap is reduced to 1.3 eV in the Co-free films and to 0.7 eV in the film with partial ...


Texture Development And Coercivity Enhancement In Cast Alnico 9 Magnets, Wenyong Zhang, Shah Valloppilly, Xingzhong Li, Lanping Yue, Ralph Skomski, Iver Anderson, Matthew Kramer, Wei Tang, Jeff Shield, David J. Sellmyer Dec 2017

Texture Development And Coercivity Enhancement In Cast Alnico 9 Magnets, Wenyong Zhang, Shah Valloppilly, Xingzhong Li, Lanping Yue, Ralph Skomski, Iver Anderson, Matthew Kramer, Wei Tang, Jeff Shield, David J. Sellmyer

Faculty Publications from Nebraska Center for Materials and Nanoscience

The effect of Y addition and magnetic field on texture and magnetic properties of arc-melted alnico 9 magnets has been investigated. Small additions of Y (1.5 wt.%) develop a (200) texture for the arc-melted alnico 9 magnet. Such a texture is hard to form in cast samples. To achieve this goal, we set up a high-field annealing system with a maximum operation temperature of 12500 C. This system enabled annealing in a field of 45 kOe with subsequent draw annealing for the solutionized buttons; we have been able to substantially increase remanence ratio and coercivity, from 0.70 ...


Novel Half-Metallic And Spin-Gapless Heusler Compounds, Yunlong Jin Aug 2017

Novel Half-Metallic And Spin-Gapless Heusler Compounds, Yunlong Jin

Theses, Dissertations, and Student Research: Department of Physics and Astronomy

This thesis is devoted to experimental studies of Heusler compounds CoFeCrAl, CoFeCrX (X = Si, Ge) and Mn2PtSn. These Heusler alloys present an interesting class of ferromagnetic materials for spintronic applications since they are predicted to be spin gapless semiconductors and have half-metallic properties with 100 % spin polarization at the Fermi level. In this thesis, the structural, magnetic, spin-polarization and electron- transport properties of the fabricated alloys were studied. CoFeCrAl thin films deposited on MgO exhibit nearly perfect epitaxy and a high degree of L21 Heusler order. All considered types of chemical disorder destroy the spin-gapless semiconductivity of ...


Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson Aug 2017

Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson

Mechanical (and Materials) Engineering -- Dissertations, Theses, and Student Research

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide ...


Simulation Of Alnico Coercivity, Liqin Ke, Ralph Skomski, Todd D. Hoffman, Lin Zhoue, Wei Tang, Duane D. Johnson, Matthew J. Kramer, Iver E. Anderson, C.Z. Wang Jul 2017

Simulation Of Alnico Coercivity, Liqin Ke, Ralph Skomski, Todd D. Hoffman, Lin Zhoue, Wei Tang, Duane D. Johnson, Matthew J. Kramer, Iver E. Anderson, C.Z. Wang

Faculty Publications from Nebraska Center for Materials and Nanoscience

Micromagnetic simulations of alnico show substantial deviations from Stoner-Wohlfarth behavior due to the unique size and spatial distribution of the rod-like Fe-Co phase formed during spinodal decomposition in an external magnetic field. The maximum coercivity is limited by single-rod effects, especially deviations from ellipsoidal shape, and by interactions between the rods. Both the exchange interaction between connected rods and magnetostatic interaction between rods are considered, and the results of our calculations show good agreement with recent experiments. Unlike systems dominated by magnetocrystalline anisotropy, coercivity in alnico is highly dependent on size, shape, and geometric distribution of the Fe-Co phase, all ...


Elastic Properties Of Superconductors And Materials With Weakly Correlated Spins, Christian Binek Jul 2017

Elastic Properties Of Superconductors And Materials With Weakly Correlated Spins, Christian Binek

Christian Binek Publications

It is shown that in the ergodic regime, the temperature dependence of Young’s modulus is solely determined by the magnetic properties of a material. For the large class of materials with paramagnetic or diamagnetic response, simple functional forms of the temperature derivative of Young’s modulus are derived and compared with experimental data and empirical results. Superconducting materials in the Meissner phase are ideal diamagnets. As such, they display remarkable elastic properties. Constant diamagnetic susceptibility gives rise to a temperature independent elastic modulus for ceramic and single crystalline superconductors alike. The thermodynamic approach established in this report, paves the ...


The Magnetic, Electrical And Structural Properties Of Copper-Permalloy Alloys, Makram A. Qader, A. Vishina, Lei Yu, Cougar Garcia, Rakesh K. Singh, Nicholas D. Rizzo, Mengchu Huang, Ralph Chamberlin, Kirill Belashchenko, Mark Van Schilfgaarde, N. Newman Jun 2017

The Magnetic, Electrical And Structural Properties Of Copper-Permalloy Alloys, Makram A. Qader, A. Vishina, Lei Yu, Cougar Garcia, Rakesh K. Singh, Nicholas D. Rizzo, Mengchu Huang, Ralph Chamberlin, Kirill Belashchenko, Mark Van Schilfgaarde, N. Newman

Kirill Belashchenko Publications

Copper-permalloy [Cu1–x(Ni80Fe20)x] alloy films were deposited by co-sputtering and their chemical, structural, magnetic, and electrical properties were characterized. These films are found to have favorable weak ferromagnetic properties for low temperature magnetoelectronic applications. Our results show that by varying the composition, the saturation magnetization (Ms) can be tuned from 700 emu/cm3 to 0 and the Curie temperature (Tc), can be adjusted from 900 K to 0 K. The Ms and Tc are found to scale linearly between x = 25% and 100%. Electronic structure calculations are used to ...


Effect Of Disorder On The Resistivity Of Cofecral Films, Y. Jin, R. Skomski, P. Kharel, S.R. Valloppilly, D. J. Sellmyer Mar 2017

Effect Of Disorder On The Resistivity Of Cofecral Films, Y. Jin, R. Skomski, P. Kharel, S.R. Valloppilly, D. J. Sellmyer

Faculty Publications from Nebraska Center for Materials and Nanoscience

Structural and electron-transport properties of thin films of the ferrimagnetic Heusler compound CoFeCrAl have been investigated to elucidate structure-property relationships. The alloy is, ideally, a spin-gapless semiconductor, but structural disorder destroys the spin-gapless character and drastically alters the transport behavior. Two types of CoFeCrAl films were grown by magnetron sputtering deposition at 973 K, namely polycrystalline films on Si substrates and epitaxial films on MgO (001) substrates. The resistivity decreases with increasing temperature, with relatively small temperature coefficients of –0.19 cm=K for the polycrystalline films and –0.12 cm=K for the epitaxial films. The residual resistivity of ...


Formation Of Mound-Like Multiscale Surface Structures On Titanium By Femtosecond Laser Processing, Edwin Peng, Alfred Tsubaki, Craig A. Zuhlke, Ryan Bell, Meiyu Wang, Dennis R. Alexander, George Gogos, Jeffrey E. Shield Mar 2017

Formation Of Mound-Like Multiscale Surface Structures On Titanium By Femtosecond Laser Processing, Edwin Peng, Alfred Tsubaki, Craig A. Zuhlke, Ryan Bell, Meiyu Wang, Dennis R. Alexander, George Gogos, Jeffrey E. Shield

Mechanical (and Materials) Engineering -- Dissertations, Theses, and Student Research

Surface Functionalization Technique • Femtosecond Laser Surface Processing (FLSP) • Utilize high power, femtosecond (10-15 s) laser pulses • Produce self-organized, multiscale surface micro/nanostructures • Diverse range of applicable substrates: semiconductors, metals, polymers, & composites

Why? • What are the different types of FLSP structures on Ti? • Physical evidence needed for FLSP formation models • Optimize FLSP of Ti for biomedical & other applications

How? • Obtain evidence of mound growth processes by examining underlying microstructure • Utilize dual beam Scanning Electron Microscope-Focused Ion Beam instrument to cross section surface structures & fabricate transmission electron microscopy samples


Half-Metallic Magnetism In Ti3co5-Xfexb2, Rohit Pathak, Imran Ahamed, W. Y. Zhang, Shah Vallopilly, D. J. Sellmyer, Ralph Skomski, Arti Kashyap Feb 2017

Half-Metallic Magnetism In Ti3co5-Xfexb2, Rohit Pathak, Imran Ahamed, W. Y. Zhang, Shah Vallopilly, D. J. Sellmyer, Ralph Skomski, Arti Kashyap

Faculty Publications from Nebraska Center for Materials and Nanoscience

Bulk alloys and thin films of Fe-substituted Ti3Co5B2 have been investigated by first-principle density-functional calculations. The series, which is of interest in the context of alnico magnetism and spin electronics, has been experimentally realized in nanostructures but not in the bulk. Our bulk calculations predict paramagnetism for Ti3Co5B2, Ti3Co4FeB2 and Ti3CoFe4B2, whereas Ti3Fe5B2 is predicted to be ferromagnetic. The thin films are all ferromagnetic, indicating that moment formation may be facilitated at nanostructural grain boundaries ...


Cooperative And Noncooperative Magnetization Reversal In Alnicos, Raplh Skomski, Liqin Ke, Matthew J. Kramer, Iver E. Anderson, C.Z. Wang, W.Y. Zhang, Jeff E. Shield, D. J. Sellmyer Feb 2017

Cooperative And Noncooperative Magnetization Reversal In Alnicos, Raplh Skomski, Liqin Ke, Matthew J. Kramer, Iver E. Anderson, C.Z. Wang, W.Y. Zhang, Jeff E. Shield, D. J. Sellmyer

Faculty Publications from Nebraska Center for Materials and Nanoscience

It is investigated how magnetostatic interactions affect the coercivity of alnicotype magnets. Starting from exact micromagnetic relations, we analyze two limits, namely cooperative reversal processes operative on short lengths scales and noncooperative reversal processes on long length scales. In alnicos, intrawire interactions are predominantly cooperative, whereas interwire effects are typically noncooperative. However, the transition between the regimes depends on feature size and hysteresis-loop shape, and interwire cooperative effects are largest for nearly rectangular loops. Our analysis revises the common shape-anisotropy interpretation of alnicos.


Epitaxial Strain Controlled Magnetocrystalline Anisotropy In Ultrathin Ferh/Mgo Bilayers, Guohul Zheng, San-Huang Ke, Maosheng Miao, Jinwoong Kim, R, Ramesh, Nicholas Kioussis Jan 2017

Epitaxial Strain Controlled Magnetocrystalline Anisotropy In Ultrathin Ferh/Mgo Bilayers, Guohul Zheng, San-Huang Ke, Maosheng Miao, Jinwoong Kim, R, Ramesh, Nicholas Kioussis

Faculty Publications from Nebraska Center for Materials and Nanoscience

Using ab initio electronic structure calculations we have investigated the effect of epitazial strain on the magnetocrystalline anisotropy (MCA) of ultrathin FeRh/MgO heterostructures. Analysis of the energy- and k-resolved distribution of the orbital character of the band structure reveals that MCA largely arises from the spin-orbit coupling (SOC) between dx2-y2 and dxz/dyz orbitlas of Fe atoms at the FeRh/MhO interface. We demonstrate that the strain has significant effects on the MCA: It not only affects the value of the MCA but also induces a switching of the magnetic easy axis from perpendicular on in-plane ...


Comment On “Electronic Structure Of Mo(1−X)Rex Alloys Studied Through Resonant Photoemission Spectroscopy”, Prescott Evans, Peter A. Dowben Jan 2017

Comment On “Electronic Structure Of Mo(1−X)Rex Alloys Studied Through Resonant Photoemission Spectroscopy”, Prescott Evans, Peter A. Dowben

Peter Dowben Publications

Further analysis of the resonant photoemission data, found within Sundar et al (2016 J. Phys.: Condens. Matter 28 315502), show the intensities do not follow the elemental composition in the Mo1−xRex alloy. Similar trends are observed in the published data for Gd1−xNix alloy films. The analysis of the resonant photoemission intensities suggests that Mo in the Mo1−xRex alloy and Gd in the Gd1−xNix alloy have nearest neighbor bonds to Re and Ni respectively. This means the A–B bond is favored over the average ...


Ch3Nh3Pbi3 Perovskites: Ferroelasticity Revealed, Evgheni Strelcov, Qingfeng Dong, Tao Li, Jungseok Chae, Yuchuan Shao, Yehao Deng, Alexei Gruverman, Jinsong Huang, Andrea Centrone Jan 2017

Ch3Nh3Pbi3 Perovskites: Ferroelasticity Revealed, Evgheni Strelcov, Qingfeng Dong, Tao Li, Jungseok Chae, Yuchuan Shao, Yehao Deng, Alexei Gruverman, Jinsong Huang, Andrea Centrone

Alexei Gruverman Publications

Ferroelectricity has been proposed as a plausible mechanism to explain the high photovoltaic conversion efficiency in organic-inorganic perovskites; however, convincing experimental evidence in support of this hypothesis is still missing. Identifying and distinguishing ferroelectricity from other properties, such as piezoelectricity, ferroelasticity, etc., is typically nontrivial because these phenomena can coexist in many materials. In this work, a combination of microscopic and nanoscale techniques provides solid evidence for the existence of ferroelastic domains in both CH3NH3PbI3 polycrystalline films and single crystals in the pristine state and under applied stress. Experiments show that the configuration of CH ...


Theoretical Approach To Electroresistance In Ferroelectric Tunnel Junctions, Sou-Chi Chang, Azad Naeemi, Dmitri E. Nikonov, Alexei Gruverman Jan 2017

Theoretical Approach To Electroresistance In Ferroelectric Tunnel Junctions, Sou-Chi Chang, Azad Naeemi, Dmitri E. Nikonov, Alexei Gruverman

Alexei Gruverman Publications

In this paper, a theoretical approach comprising the nonequilibrium Green’s function method for electronic transport and the Landau-Khalatnikov equation for electric polarization dynamics is presented to describe polarization-dependent tunneling electroresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, the measured current-voltage characteristic curves in both inorganic (Co/BaTiO3/La0.67Sr0.33MnO3) and organic (Au/PVDF/W) ferroelectric tunnel junctions can be well described by the proposed approach. Furthermore, under this theoretical framework, the controversy of opposite TER signs observed experimentally by different groups in Co/BaTiO3/La0 ...


Anomalous Photovoltaic Effect In Organic-Inorganic Hybrid Perovskite Solar Cells, Yongbo Yuan, Tao Li, Qi Wang, Jie Xing, Alexei Gruverman, Jinsong Huang Jan 2017

Anomalous Photovoltaic Effect In Organic-Inorganic Hybrid Perovskite Solar Cells, Yongbo Yuan, Tao Li, Qi Wang, Jie Xing, Alexei Gruverman, Jinsong Huang

Alexei Gruverman Publications

Organic-inorganic hybrid perovskites (OIHPs) have been demonstrated to be highly successful photovoltaic materials yielding very-high-efficiency solar cells. We report the room temperature observation of an anomalous photovoltaic (APV) effect in lateral structure OIHP devices manifested by the device’s open-circuit voltage (VOC) that is much larger than the bandgap of OIHPs. The persistent VOC is proportional to the electrode spacing, resembling that of ferroelectric photovoltaic devices. However, the APV effect in OIHP devices is not caused by ferroelectricity. The APV effect can be explained by the formation of tunneling junctions randomly dispersed in the polycrystalline films, which allows ...


Moving Towards The Magnetoelectric Graphene Transistor, Shi Cao, Zhiyong Xiao, Chun Pui Kwan, Kai Zhang, Jonathan P. Bird, Lu Wang, Wai-Ning Mei, Xia Hong, Peter A. Dowben Jan 2017

Moving Towards The Magnetoelectric Graphene Transistor, Shi Cao, Zhiyong Xiao, Chun Pui Kwan, Kai Zhang, Jonathan P. Bird, Lu Wang, Wai-Ning Mei, Xia Hong, Peter A. Dowben

Xia Hong Publications

The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on ...


Scaling Of Electroresistance Effect In Fully Integrated Ferroelectric Tunnel Junctions, Mohammad Abuwasib, Haidong Lu, Tao Li, Pratyush Buragohain, Hyungwoo Lee, Chang-Beom Eom, Alexei Gruverman, Uttam Singisetti Jan 2016

Scaling Of Electroresistance Effect In Fully Integrated Ferroelectric Tunnel Junctions, Mohammad Abuwasib, Haidong Lu, Tao Li, Pratyush Buragohain, Hyungwoo Lee, Chang-Beom Eom, Alexei Gruverman, Uttam Singisetti

Alexei Gruverman Publications

Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO3/SrRuO3 ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300×300 nm2 exhibiting a tunneling electroresistance (TER) effect of the order of 2.7×104% have been fabricated and tested. Measured current density of 75 A/cm2 ...