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Epitaxial Growth Of Pb(Zr0.2ti0.8)O3 On Si And Its Nanoscale Piezoelectric Properties, A. Lin, X. Hong, V. Wood, A. A. Verevkin, C. H. Ahn, R. A. Mckee, F. J. Walker, E. D. Specht
Epitaxial Growth Of Pb(Zr0.2ti0.8)O3 On Si And Its Nanoscale Piezoelectric Properties, A. Lin, X. Hong, V. Wood, A. A. Verevkin, C. H. Ahn, R. A. Mckee, F. J. Walker, E. D. Specht
Xia Hong Publications
We have demonstrated a route to epitaxial Pb(Zr0.2Ti0.8)O3 on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO3 transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of <5 Å, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ~50 pm/V that is switchable down to sub-100-nm dimensions.