Structural Materials Commons^™

Development Of A Wireless Telemetry Load And Displacement Sensor For Orthopaedic Applications, William Anderson

Electronic Thesis and Dissertation Repository

Due to sensor size and supporting circuitry, in vivo load and deformation measurements are currently restricted to applications within larger orthopaedic implants. The objective of this thesis is to repurpose a commercially available low-power, miniature, wireless, telemetric, tire-pressure sensor (FXTH87) to measure load and deformation for future use in biomechanical applications. The capacitive transducer membrane of the FXTH87 was modified, and a relationship was reported between applied compressive deformation and sensor signal value. The sensor package was embedded within a deformable enclosure to illustrate potential applications of the sensor for monitoring load. Finite element analysis was an effective tool to …

Development Of Light Actuated Chemical Delivery Platform On A 2-D Array Of Micropore Structure, Hojjat Rostami Azmand, Hojjat Rostami Azmand

Dissertations and Theses

Localized chemical delivery plays an essential role in the fundamental information transfers within biological systems. Thus, the ability to mimic the natural chemical signal modulation would provide significant contributions to understand the functional signaling pathway of biological cells and develop new prosthetic devices for neurological disorders. In this paper, we demonstrate a light-controlled hydrogel platform that can be used for localized chemical delivery in a high spatial resolution. By utilizing the photothermal behavior of graphene-hydrogel composites confined within micron-sized fluidic channels, patterned light illumination creates the parallel and independent actuation of chemical release in a group of fluidic ports. The …

Structural Health Monitoring Of Composite Parts: A Review, Jacob Pessin

Honors Theses

Structural health monitoring has the potential to allow composite structures to be more reliable and safer, then by using more traditional damage assessment techniques. Structural health monitoring (SHM) utilizes individual sensor units that are placed throughout the load bearing sections of a structure and gather data that is used for stress analysis and damage detection. Statistical time based algorithms are used to analyze collected data and determine both damage size and probable location from within the structure. While traditional calculations and life span analysis can be done for structures made of isotropic materials such as steel or other metals, composites …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar

Graduate Theses and Dissertations

A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.

Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.

Development Of Micro-Hall Devices For Current Sensing, Thomas White

Graduate Theses and Dissertations

In this work, micro-Hall devices were developed for the purpose of sensing current within a high temperature and high power environment. GaAs HEMT, InGaAs pHEMT, and GaN HEMT structures were studied. These structures were grown by molecular beam epitaxy. Processing techniques including photolithography, metallization, Si deposition, wet etching, and dry etching were studied. Electrical characterization measurements including low frequency noise, Hall effect, sensitivity, capacitance-voltage, and current-voltage were performed.

Electron mobility and sheet carrier density studies were performed for both the InGaAs pHEMT and GaAs HEMT structures. Results indicated the InGaAs pHEMT was superior and thus fabricated as the micro-Hall device. …

Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen

Albert B Chen

Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …

Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen

Albert B Chen

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.

Fabrication And Characterization Of Torsional Micro-Hinge Structures, Mike Madrid Marrujo

Master's Theses

ABSTRACT

Fabrication and Characterization of Torsional Micro-Hinge Structures

Mike Marrujo

There are many electronic devices that operate on the micrometer-scale such as Digital Micro-Mirror Devices (DMD). Micro actuators are a common type of DMD that employ a diaphragm supported by torsional hinges, which deform during actuation and are critical for the devices to have high stability and reliability. The stress developed within the hinge during actuation controls how the actuator will respond to the actuating force. Electrostatically driven micro actuators observe to have a fully recoverable non-linear viscoelastic response. The device consists of a micro-hinge which is suspended by two …

A Parallel Circuit Model For Multi-State Resistive-Switching Random Access Memory, Albert Chen

Albert B Chen

Large, rapidly growing literature is available on bipolar resistive-switching random access memories (RRAM) made of myriad of simple and advanced materials. Many of them exhibit similar resistance switching behavior but, until now, no unifying model can allow quantification of their voltage and time responses. Using a simple parallel circuit model, these responses of a newly discovered RRAM made of a thin-film random material are successfully analyzed. The analysis clearly reveals a large population of intermediate states with remarkably similar switching characteristics. Such modeling framework based on simple circuit constructs also appears applicable to several RRAM made of other materials. This …

Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen

Albert B Chen

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.