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Development Of Micro-Hall Devices For Current Sensing, Thomas White

Graduate Theses and Dissertations

In this work, micro-Hall devices were developed for the purpose of sensing current within a high temperature and high power environment. GaAs HEMT, InGaAs pHEMT, and GaN HEMT structures were studied. These structures were grown by molecular beam epitaxy. Processing techniques including photolithography, metallization, Si deposition, wet etching, and dry etching were studied. Electrical characterization measurements including low frequency noise, Hall effect, sensitivity, capacitance-voltage, and current-voltage were performed.

Electron mobility and sheet carrier density studies were performed for both the InGaAs pHEMT and GaAs HEMT structures. Results indicated the InGaAs pHEMT was superior and thus fabricated as the micro-Hall device. …