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Semiconductor and Optical Materials Commons™

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2006

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Articles 1 - 12 of 12

Full-Text Articles in Semiconductor and Optical Materials

Characterization Of Passivated Indium Antimonide, Catherine Ann Taylor Jun 2006

Characterization Of Passivated Indium Antimonide, Catherine Ann Taylor

Theses and Dissertations

Infrared absorption and photoluminescence measurements have been used to optically characterize bulk-grown, 680-μm thick, indium antimonide (InSb), both as-grown and after passivation by either anodization or a 700-Å layer of silicon oxide (SiOx). Spectra were obtained using Fourier transform infrared (FT-IR) spectroscopy. Results include the effects of sample temperature in the range of 10 to 300 K and 4.636 μm laser pump power in the range of 28 mW to 1.43 W for the photoluminescence spectrum.

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Application Of Electrolessplating Technology In Interconnection Manufacturing Of Ultralarge-Scale Integration, Zeng-Lin Wang May 2006

Application Of Electrolessplating Technology In Interconnection Manufacturing Of Ultralarge-Scale Integration, Zeng-Lin Wang

Journal of Electrochemistry

In this paper,research progresses in electroless plating for damascene copper process were reviewed.Electroless nickel ternary alloy deposition for barrier layer and electroless copper plating for seed layer were presented.Bottom-up copper fill high-aspect-via-hole and electroless plating after ICB-Pd catalytic layer for seed layer were mainly introduced.The applications of electroless plating in ultralarge-scale integration were discussed,and the developing tendency was also suggested.

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Optical Characterization Of Thick Growth Orientation-Patterned Gallium Arsenide, Joshua W. Meyer Mar 2006

Optical Characterization Of Thick Growth Orientation-Patterned Gallium Arsenide, Joshua W. Meyer

Theses and Dissertations

Tunable laser sources in the mid-infrared (MIR) spectral range are required for several Air Force applications. Existing lasers with output in the near-infrared can be converted to more desirable MIR by using nonlinear effects. Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques. This research examines the optical quality of seven OPGaAs crystal samples and explores the design of an optical parametric oscillator (OPO) device. The Air Force Research Laboratory Electro-Optical Countermeasures Technology Branch obtained the samples from …

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Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada Mar 2006

Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada

Theses and Dissertations

Micro-Raman (µRaman) spectroscopy is an efficient, non-destructive technique widely used to determine the quality of semiconductor materials and microelectromechanical systems. This work characterizes the stress distribution in wurtzite gallium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. This wide bandgap semiconductor material is being considered by the Air Force Research Laboratory for the fabrication of shock-hardened MEMS accelerometers. µRaman spectroscopy is particularly useful for stress characterization because of its ability to measure the spectral shifts in Raman peaks in a material, and correlate those shifts to stress and strain. The spectral peak shift as a function of stress, …

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Passive Multiple Beam Combination In Optical Fibers Via Stimulated Brillouin Scattering, Kirk C. Brown Mar 2006

Passive Multiple Beam Combination In Optical Fibers Via Stimulated Brillouin Scattering, Kirk C. Brown

Theses and Dissertations

Many active methods of scaling laser brightness have been demonstrated in recent years. The goal of this research was to demonstrate the feasibility of passively combining multiple laser beams using Stimulated Brillouin Scattering (SBS) in a long multimode optical fiber. This method of combination employed a “Gatling gun” fiber array that allowed several collimated beams to be focused by a lens into an optical fiber. The retroreflected Stokes beam is passed through the center of the beam combiner for analysis. In addition to experimental methodology and equipment used, the theoretical and historical background of SBS in optical fibers is provided. …

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Analysis Of Photoconductive Properties In Ge2Sb2Te5 (Gst) Chalcogenide Films For Applications In Novel Electronics, John R. V. Chezem Mar 2006

Analysis Of Photoconductive Properties In Ge2Sb2Te5 (Gst) Chalcogenide Films For Applications In Novel Electronics, John R. V. Chezem

Theses and Dissertations

This thesis investigated the thermal phase-change properties in Ge2Sb2Te5 (GST) chalcogenide-based films and determined the feasibility of coupling the GST with photosensitive DNA material for novel optical device applications. Modeling and testing of GST were researched with the approach that GST would react as a resistive mechanism through thermal manipulation. A test structure was fabricated with a 2-micronmeter MEMS fabrication process. GST material was deposited (by RF sputtering) on the surface of the test structures. The GST was analyzed primarily in the amorphous to crystalline transition states due to more distinct changes in the resistance …

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Characteristics Of Two-Dimensional Triangular And Three-Dimensional Face-Centered-Cubic Photonic Crystals, Jeffery D. Clark Mar 2006

Characteristics Of Two-Dimensional Triangular And Three-Dimensional Face-Centered-Cubic Photonic Crystals, Jeffery D. Clark

Theses and Dissertations

The fabrication of photonic crystals (PhC) with photonic band gaps (PBG) in the visible range is a difficult task due to the small structural feature sizes of the PhC. The particular type of PhC examined is a two-dimensional (2-D) triangular structure with a PBG designed for visible wavelengths with applications in visible integrated photonic systems. This work examines the processes involved and viability of fabricating 2-D triangular PhC's by a variety of techniques: focused ion beam, electron lithography and holographic photo-polymerization/lithography. The design of the PhC was based on a program created to display gap maps for triangular structures. The …

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Carrier Lifetime Dynamics Of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments, Wayne E. Eikenberry Mar 2006

Carrier Lifetime Dynamics Of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments, Wayne E. Eikenberry

Theses and Dissertations

GaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fast growth process called hydride vapor phase epitaxy (HVPE). Unfortunately, HVPE produces a high number of defects. These defects cause Shockley-Read-Hall recombination rates to dominate over Auger and radiative recombination rates. The carrier lifetime from four OP-GaAs samples are reported here using two different experimental techniques. The first experiment used a streak camera to measure the carrier lifetime via time-resolved photoluminescence. The temporal resolution of the streak camera …

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Special Photoelectrochemical Response Of Nano-Crystalline Tio_2 Electrode, Bi-Bo Lan, Jian-Zhang Zhou, Yan-Yan Xi, Hong-Xiang Chen, Guang-Hua Yao, Zhong-Hua Lin Feb 2006

Special Photoelectrochemical Response Of Nano-Crystalline Tio_2 Electrode, Bi-Bo Lan, Jian-Zhang Zhou, Yan-Yan Xi, Hong-Xiang Chen, Guang-Hua Yao, Zhong-Hua Lin

Journal of Electrochemistry

The nano-crystalline TiO_2 electrodes were prepared by spread method,electrodeposition and sol-gel method.The experimental results show that the nano-crystalline TiO_2 electrodes have special photoelectrochemical response-the photocrrent-potential curves appear peaks.The special photoelectrochemical behaviors of nano-(crystalline) TiO_2 electrodes are ascribed to nano-structure as well as special light induced redox reaction mechanism of nano-crystalline semiconductor electrodes.

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Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner Jan 2006

Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner

Faculty Publications

The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (ΔVfb) , work function (Φm) , and leakage current density (JL) variations. A more negative ΔVfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φm near the Ti-rich corners and higher Φm near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed Φm variations. Combinatorial methodologies prove to be useful …

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Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali Jan 2006

Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …

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Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali Jan 2006

Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Melting and solidification of as-deposited and recrystallized Bi crystallites, deposited on highly oriented 002-graphite at 423 K, were studied using reflection high-energy electron diffraction (RHEED). Films with mean thickness between 1.5 and 33 ML (monolayers) were studied. Ex situ atomic force microscopy was used to study the morphology and the size distribution of the formed nanocrystals. The as-deposited films grew in the form of three-dimensional crystallites with different shapes and sizes, while those recrystallized from the melt were formed in nearly similar shapes but different sizes. The change in the RHEED pattern with temperature was used to probe the melting …

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