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Research Of Electro-Optical Effect In Metal Halide Perovskites By Fabry-Perot Interometer Method, Hanxiang Yin 2019 Washington University in St. Louis

Research Of Electro-Optical Effect In Metal Halide Perovskites By Fabry-Perot Interometer Method, Hanxiang Yin

Engineering and Applied Science Theses & Dissertations

Perovskites have been investigated a lot by present and reported with outstanding optoelectronic properties. However, so far there is no publications about another important property, the electro-optical (EO) effect which is related to important applications in photolithography. This thesis is mainly mean to calculate the EO constants of one kind of organic perovskite material, CH3NH3PbI3, which has been reported to have good capability of forming film by spin-coating, through the way of putting the film of CH3NH3PbI3 between two layers of metal mirrors to build a Fabry-Perot interferometer and characterizing ...


Tixzr(1-X)N Thin Films For Advanced Plasmonic Materials, Susan R. Schickling, Codi Ferree, Amy Godfrey, Andre Hillsman, Hannah Robinson 2019 The University of Tennessee, Knoxville

Tixzr(1-X)N Thin Films For Advanced Plasmonic Materials, Susan R. Schickling, Codi Ferree, Amy Godfrey, Andre Hillsman, Hannah Robinson

Chancellor’s Honors Program Projects

No abstract provided.


Reactive Ion Etching Selectivity Of Si/Sio2: Comparing Of Two fluorocarbon Gases Chf3 And Cf4, Meiyue Zhang, Pat Watson 2019 Singh Center for Nanotechnology

Reactive Ion Etching Selectivity Of Si/Sio2: Comparing Of Two fluorocarbon Gases Chf3 And Cf4, Meiyue Zhang, Pat Watson

Protocols and Reports

Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between SiO2 and Si using two fluorocarbon gases, CF4 and CHF3. Results show that CHF3 gives better selectivity (16:1) over CF4 (1.2 :1). On the other hand, the etch rate of SiO2 of CF4 is approximately 52.8 nm/min, faster than CHF3 (32.4 nm/min).


Characterization And Optimization Of Parylene-C Deposition Process Using Scs Parylene Coater, Hannah Hastings, Eric D. Johnston, Gyuseok Kim 2019 Singh Center for Nanotechnology

Characterization And Optimization Of Parylene-C Deposition Process Using Scs Parylene Coater, Hannah Hastings, Eric D. Johnston, Gyuseok Kim

Tool Data

Parylene-C has been deposited on bare Si wafers by physical vapor deposition using the SCS Coating Systems. Results show a 12 µm thick Parylene-C film with 10 g of dimer and negligible thickness variation across a wafer. We find a positive linear relationship between film thickness and mass of dimer at a range of 1 g to 18 g. However, the Al boat for dimer was burnt with 18 g of dimer, suggesting multiple depositions with 1 g to 10 g of dimer are recommended to achieve the Parylene-C film thicker than 12 µm.


Chemical Stability And Performance Influence Of Choice Substituents And Core Conjugation Of Organic Semiconductors, Jack Ly 2019 University of Massachusetts Amherst

Chemical Stability And Performance Influence Of Choice Substituents And Core Conjugation Of Organic Semiconductors, Jack Ly

Doctoral Dissertations

Realizing organic based active materials for electronic devices, such as thin film transistors and photovoltaics, has been long sought after. Advancement in the field driven by chemists, engineers, and physicists alike have bolstered organic based semiconductor performance levels to rival those of traditional inorganic amorphous silicon-based devices. Within the field of organic semiconductors (OSC), two categories of active materials may be generalized: (1) polymer and (2) small molecule semiconductors. Each class of OSC inherently have their own advantages and disadvantages. Polymer semiconductors (PSC) allow a wide range in tunability via choice monomers and side chain engineering to illicit desirable energy ...


A Simple And Robust Approach To Reducing Contact Resistance In Organic Transistors, Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain McCulloch, John E. Anthony, Lee J. Richter, Dean M. DeLongchamp, Oana D. Jurchescu 2018 Wake Forest University

A Simple And Robust Approach To Reducing Contact Resistance In Organic Transistors, Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain Mcculloch, John E. Anthony, Lee J. Richter, Dean M. Delongchamp, Oana D. Jurchescu

Chemistry Faculty Publications

Efficient injection of charge carriers from the contacts into the semiconductor layer is crucial for achieving high-performance organic devices. The potential drop necessary to accomplish this process yields a resistance associated with the contacts, namely the contact resistance. A large contact resistance can limit the operation of devices and even lead to inaccuracies in the extraction of the device parameters. Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels ...


Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li 2018 University of Arkansas, Fayetteville

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of ...


Comparative Study Of Power Semiconductor Devices In A Multilevel Cascaded H-Bridge Inverter, Kenneth Mordi 2018 University of Arkansas, Fayetteville

Comparative Study Of Power Semiconductor Devices In A Multilevel Cascaded H-Bridge Inverter, Kenneth Mordi

Theses and Dissertations

This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET ...


Growth And Characterization Of Silicon-Germanium-Tin Semiconductors For Future Nanophotonics Devices, Bader Saad Alharthi 2018 University of Arkansas, Fayetteville

Growth And Characterization Of Silicon-Germanium-Tin Semiconductors For Future Nanophotonics Devices, Bader Saad Alharthi

Theses and Dissertations

The bright future of silicon (Si) photonics has attracted research interest worldwide. The ultimate goal of this growing field is to develop a group IV based Si foundries that integrate Si-photonics with the current complementary metal–oxide–semiconductor (CMOS) on a single chip for mid-infrared optoelectronics and high speed devices. Even though group IV was used in light detection, such as photoconductors, it is still cannot compete with III-V semiconductors for light generation. This is because most of the group IV elements, such as Si and germanium (Ge), are indirect bandgap materials. Nevertheless, Ge and Si attracted industry attention because ...


Fabrication And Characterization Of Electrochemical Glucose Sensors, Mohammed Marie 2018 University of Arkansas, Fayetteville

Fabrication And Characterization Of Electrochemical Glucose Sensors, Mohammed Marie

Theses and Dissertations

Electrochemical sensors based on the nanostructure of the semiconductor materials are of tremendous interest to be utilized for glucose monitoring. The sensors, based on the nanostructure of the semiconductor materials, are the third generations of the glucose sensors that are fast, sensitive, and cost-effect for glucose monitoring.

Glucose sensors based on pure zinc oxide nanorods (NRs) grown on different substrates, such ITO, FTO, and Si/SiO2/Au, were investigated in this research. Silicon nanowire (NW)- based glucose sensors were also studied. First, an enzyme-based glucose sensor was fabricated out of glass/ITO/ZnO NRs/BSA/GOx/nafion membrane. The sensor ...


Application Of Silicon Nanohair Textured P-N Junctions In A Photovoltaic Device, Michael Small 2018 University of Maine

Application Of Silicon Nanohair Textured P-N Junctions In A Photovoltaic Device, Michael Small

Electronic Theses and Dissertations

The goal of this project is to design and develop a fabrication process for a silicon photovoltaic device which incorporates a nanohair textured p-n junction. The silicon nanowires are etched into a silicon wafer, comprising an epitaxial p-layer on n-substrate, via metal-assisted chemical etching (MACE). The resulting nanowires contain p-n junctions that lie along the length of the vertical nanowires. This construct has the potential to increase the optical bandwidth of a silicon photovoltaic device by allowing a greater amount of short wavelength light to reach the junction. In addition, the MACE method of nanofabrication has the potential for decreasing ...


Water Processable N-Type Organic Semiconductor, Ruben S. Riquelme, Matthew Collins Weisenberger, Camila F. Gomez 2018 University of Kentucky

Water Processable N-Type Organic Semiconductor, Ruben S. Riquelme, Matthew Collins Weisenberger, Camila F. Gomez

Center for Applied Energy Research Faculty Patents

The present invention concerns a water-processable n-type semiconductor comprised of polyvinylpyrrolidone (PVP), carbon nanotubes (CNTs) and poly(ethyleneimine) (PEI). The semiconductors are prepared by providing PVP and CNTs in a hydrophilic slurry and dispersing therein small amounts of PEI.


Vertical Transport Study Of Iii-V Type-Ii Superlattices, Zahra Taghipour 2018 Center for High Technology Materials

Vertical Transport Study Of Iii-V Type-Ii Superlattices, Zahra Taghipour

Optical Science and Engineering ETDs

Type-II strained layer superlattice (T2SL) semiconductors hold great promise for mid- and long-wavelength infrared photodetectors. While T2SL-based materials have advanced significantly in the last three decades, an outstanding challenge to improve the T2SLs is to understand the carrier transport and its limitations, in particular along the superlattice growth layers.

In this dissertation, an overview of the current state-of-the-art InAs/GaSb T2SLs is presented. Fundamental semiconductor device equations and transport properties, including miniband conduction and the drift-diffusion parameters, are reviewed, and the fundamental limiting factors in carrier's transport are discussed. Furthermore, the standard method of electron-beam-induced current technique to measuring ...


Creating A Computational Tool To Simulate Vibration Control For Piezoelectric Devices, Ahmet Ozkan Ozer, Emma J. Moore 2018 Western Kentucky University

Creating A Computational Tool To Simulate Vibration Control For Piezoelectric Devices, Ahmet Ozkan Ozer, Emma J. Moore

Posters-at-the-Capitol

Piezoelectric materials have the unique ability to convert electrical energy to mechanical vibrations and vice versa. This project takes a stab to develop a reliable computational tool to simulate the vibration control of a novel “partial differential equation” model for a piezoelectric device, which is designed by integrating electric conducting piezoelectric layers constraining a viscoelastic layer to provide an active and lightweight intelligent structure. Controlling unwanted vibrations on piezoelectric devices (or harvesting energy from ambient vibrations) through piezoelectric layers has been the major focus in cutting-edge engineering applications such as ultrasonic welders and inchworms. The corresponding mathematical models for piezoelectric ...


Controlled Nanomorphology Of Hybrid Organic/Inorganic Multi-Component Composites Through Cooperative Non-Covalent Interactions, Lingyao Meng 2018 University of New Mexico

Controlled Nanomorphology Of Hybrid Organic/Inorganic Multi-Component Composites Through Cooperative Non-Covalent Interactions, Lingyao Meng

Shared Knowledge Conference

Hybrid organic–inorganic nanocomposite polymers, with inorganic nanoparticles embedded in organic matrix have emerged as a special category of multifunctional materials. With rational materials design, these hybrids can show the synergistic effect of the properties from both phases. Homogenous dispersion and orderly arrangement of the organic and inorganic components are key in their functionalities. By controlling the interface and corresponding interfacial interactions between the organic and inorganic entities, we have developed a logical approach to form stable and controlled hybrid nanofiber structures. We demonstrate the formation of hybrid polymer/quantum dots (or iron oxide nanoparticles) nanocomposites through non-covalent interactions (hydrogen ...


Nanoflower-Like Bi2moo6/Ag3po4 In Water Treatment, Xavier Morgan-Lange, Jaeyun Moon, Kaleab Ayalew 2018 University of Nevada, Las Vegas

Nanoflower-Like Bi2moo6/Ag3po4 In Water Treatment, Xavier Morgan-Lange, Jaeyun Moon, Kaleab Ayalew

McNair Poster Presentations

No abstract provided.


Thienoisatin Oligomers As N-Type Molecular Semiconductors, Natalie M. Kadlubowski, Xuyi Luo, Jianguo Mei 2018 Purdue University

Thienoisatin Oligomers As N-Type Molecular Semiconductors, Natalie M. Kadlubowski, Xuyi Luo, Jianguo Mei

The Summer Undergraduate Research Fellowship (SURF) Symposium

Organic field effect transistors (OFETs) offer many advantages compared to traditional inorganic transistors, such as flexibility and solution processability. In this study we design and synthesize two thienoisatin-based organic semiconducting small molecules, then investigate their electronic properties in n-type OFETs. To introduce n-type charge transport, electron-withdrawing dicarbonitrile moieties were installed on thienoisoindigo and bis-thienoisatin molecules, which led to a quinoidal conjugation on thienoisoindigo, while maintaining an aromatic conjugation on the bis-thienoisatin. Following the syntheses, the molecules were characterized to determine highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels via cyclic voltammetry, as well as any potential ...


Application Of Nano-Plasmonics For Sers Bio-Detection And Photocatalysis In The Same Platform, Muhammad R. Shattique 2018 Missouri State University

Application Of Nano-Plasmonics For Sers Bio-Detection And Photocatalysis In The Same Platform, Muhammad R. Shattique

MSU Graduate Theses

Nano-biological systems interfacing nano-structured solid surfaces with biological compounds such as oligonucleotides or proteins are highly regarded as enabling materials for biosensing and biocatalysis applications. In particular, nanostructures of noble metals such as gold or silver, when exposed to light, exhibit a phenomenon known as surface plasmon resonance. When a proper metal nanostructure (plasmonic substrate) is exposed to light, very efficient absorption of incoming photons is possible, resulting in a buildup of localized high-energy regions, or “hot-spots”, where energetic carriers or “hot carriers” can be created. These hot-carriers can be used to catalyze desired chemical transformations in materials located nearby ...


Non-Hysteretic First-Order Phase Transition With Large Latent Heat And Giant Low-Field Magnetocaloric Effect, F. Guillou, Arjun K. Pathak, Durga Paudyal, Yaroslav Mudryk, F. Wilhelm, A. Rogalev, Vitalij K. Pecharsky 2018 Ames Laboratory

Non-Hysteretic First-Order Phase Transition With Large Latent Heat And Giant Low-Field Magnetocaloric Effect, F. Guillou, Arjun K. Pathak, Durga Paudyal, Yaroslav Mudryk, F. Wilhelm, A. Rogalev, Vitalij K. Pecharsky

Materials Science and Engineering Publications

First-order magnetic transitions (FOMTs) with a large discontinuity in magnetization are highly sought in the development of advanced functional magnetic materials. Isosymmetric magnetoelastic FOMTs that do not perturb crystal symmetry are especially rare, and only a handful of material families, almost exclusively transition metal-based, are known to exhibit them. Yet, here we report a surprising isosymmetric FOMT in a rare-earth intermetallic, Eu2In. What makes this transition in Eu2In even more remarkable is that it is associated with a large latent heat and an exceptionally high magnetocaloric effect in low magnetic fields, but with tiny lattice discontinuities and negligible hysteresis. An ...


Dynamical Thermal Conductivity Of Suspended Graphene Ribbons In The Hydrodynamic Regime, Zlatan Aksamija, Arnab K. Majee 2018 University of Massachusetts Amherst

Dynamical Thermal Conductivity Of Suspended Graphene Ribbons In The Hydrodynamic Regime, Zlatan Aksamija, Arnab K. Majee

Zlatan Aksamija

The steady-state behavior of thermal transport in bulk and nanostructured semiconductors has been widely
studied, both theoretically and experimentally. On the other hand, fast transients and frequency dynamics of
thermal conduction has been given less attention. The frequency response of thermal conductivity has become
more crucial in recent years, especially in light of the constant rise in the clock frequencies in microprocessors
and terahertz sensing applications. Thermal conductivity in response to a time-varying temperature field starts
decaying when the frequency exceeds a cutoff frequency Omega_c, which is related to the inverse of phonon relaxation time τ, on the order of ...


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