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2019

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Articles 31 - 60 of 87

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev Jun 2019

Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev

Euroasian Journal of Semiconductors Science and Engineering

The influence of impurities of refractory elements on the inefficiency of charge transfer in charge-coupled devices is investigated. Found that the magnitude of the inefficiency of transfer  directly proportional to the density of surface States and the density of surface States in the CCD registers, with the resulting n losses n ≤ 0.1 depends on the type specially introduced impurities. It is shown that in CCD structures doped with impurities Ti, Zr and Hf relative to the control structures, the charge loss is greater, and in doped with impurities W and Mo, the charge loss is less.

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Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov Jun 2019

Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov

Euroasian Journal of Semiconductors Science and Engineering

It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.

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The Influence Of Γ -Irradiation On The Holographic Characteristics Of Chalcogenide Glassy Semiconductor, Zakirjan T. Аzamatov, Mira R. Bekchanova, Timur Z. Azamatov Jun 2019

The Influence Of Γ -Irradiation On The Holographic Characteristics Of Chalcogenide Glassy Semiconductor, Zakirjan T. Аzamatov, Mira R. Bekchanova, Timur Z. Azamatov

Euroasian Journal of Semiconductors Science and Engineering

Results of the research of holographic characteristics of chalcogenide glassy semiconductor films, under the influence of irradiation are presented. Found that in the range of radiation doses (roentgen) optical properties of (CGS) films and diffraction efficiency recorded holograms does not change. Also proved that the shelf life recorded holograms under certain conditions is 10 years or more.

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Volt-Ampere Characteristics Of Mos Structures Al-Al2o3-P-Cdte-Mo – In The Forward Direction Of Current, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova Jun 2019

Volt-Ampere Characteristics Of Mos Structures Al-Al2o3-P-Cdte-Mo – In The Forward Direction Of Current, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova

Euroasian Journal of Semiconductors Science and Engineering

The results of studies of the direct branch of the current – voltage characteristic of the Al-Al2O3-p-CdTe-Mo structure with base thicknesses d ~ 8÷10 μm are presented. It was shown that, along with point defects and impurities, complex complexes participate in the recombination processes in the base of the structure under study. It was established that at low current densities in point of recombination processes point defects take part, and at high current densities, when the recombination rate reaches full saturation of U≈NR/τi, the recombination processes in the samples under study are determined by complex complexes within which the electrons …

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The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev Jun 2019

The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev

Euroasian Journal of Semiconductors Science and Engineering

This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.

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Optical Power Meter For Diagnostics Of Fiber-Optic Communication Lines And Digital Multimeter, Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, Gulkhayo T. Murodillaeva Jun 2019

Optical Power Meter For Diagnostics Of Fiber-Optic Communication Lines And Digital Multimeter, Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, Gulkhayo T. Murodillaeva

Euroasian Journal of Semiconductors Science and Engineering

A multifunctional optical power attenuation meter in fiber optic cables for widespread use is proposed in this article. The main feature of the proposed meter is the ability to perform of diagnostics of mechanical damage of fiber-optic communication lines and determine the attenuation degree of a signal in the fiber-optic path in the spectral ranges of 1270-1340 nm and 1520-1580 nm, as well as the measurement of voltage, current and resistance in electrical circuits. The possibility of using the meter for diagnostics of onboard fiber-optic communication lines is justified.

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The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov Jun 2019

The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov

Euroasian Journal of Semiconductors Science and Engineering

The original sensitive method of research of the nanopowders based on use of laser excitation and a multichannel spectrometer is offered. The developed method can be used for the analysis of quality of a wide class of the powders on the basis of laser spectroscopy of secondary radiation.

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Organic Photodiodes On The Basis Of Cotton Fiber/Polymer Composite, Jonibek J. Hamdamov, Anvar S. Zakirov, Abdugafur T. Mamadalimov Jun 2019

Organic Photodiodes On The Basis Of Cotton Fiber/Polymer Composite, Jonibek J. Hamdamov, Anvar S. Zakirov, Abdugafur T. Mamadalimov

Euroasian Journal of Semiconductors Science and Engineering

In this paper, we report a study on the optical and the electrical properties of pure cotton fibers (CF) from chemically surface- and morphology-modified samples coated with poly [2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) polymer by using a dip-coating method. The efficiency of white light luminescence of cotton fibers coated with meh- MEH-PPV polymer increased and became much more intense in comparison with the luminescence of uncoated fibers and blue, green and red stripes were observed in the luminescence structure. The сurrent-voltage characteristic of sandwich-type devices consisting of successive layers of ITO (Indium doped tin oxide coated glass)-PEDOT-PSS (Poly (3,4-ethylenedioxythiophene)-Poly(styrenesulfonate)-CF/MEH-PPV-Ag showed that up …

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Radiation And Convective Losses In The Heat Sink Channel Of Photovoltaic-Thermal System, Oskar F. Tukhfatullin, Ramizulla A. Muminov Jun 2019

Radiation And Convective Losses In The Heat Sink Channel Of Photovoltaic-Thermal System, Oskar F. Tukhfatullin, Ramizulla A. Muminov

Euroasian Journal of Semiconductors Science and Engineering

. The processes of heat transfer in the channel of a liquid photovoltaic/thermal system of a flat construction without forced circulation are considered. A method of calculating the heat transfer coefficients by radiation and convection, the Nusselt and Reynolds numbers for a given photovoltaic/thermal system was proposed. It was determined that the processes of convective heat transfer in a flat photovoltaic/thermal system installed in the territory of the Republic of Uzbekistan at an optimum angle of inclination equal to the geographical latitude of the place of operation should be considered as for parallel plates located at tilt angle not more …

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Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov Jun 2019

Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov

Euroasian Journal of Semiconductors Science and Engineering

The current-voltage characteristics of the solar photovoltaic module, based on a thin-film polycrystalline semiconductor binary compound Cu(In, Ga)Se2, under real solar illumination (Prad=780 ± 30 W/m2), in the temperature range of 25 °C-50 °C, have been studied and the values of serial and shunt resistance are determined. It has been established that with increasing temperature, the magnitudes of the series and shunting resistance of the solar photovoltaic module decrease, which is most likely due to the modulation of the resistance of the n-CdS buffer front layer.

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Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova Jun 2019

Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova

Euroasian Journal of Semiconductors Science and Engineering

By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.

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Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov Jun 2019

Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov

Euroasian Journal of Semiconductors Science and Engineering

The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.

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Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov Jun 2019

Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov

Euroasian Journal of Semiconductors Science and Engineering

X-ray diffraction studies showed that the resulting film has a sphalerite structure and is single-crystal with the (100) orientation. The lattice parameter of the film is af = 0.56697 nm. By atomic force microscope was shown the possibility of obtaining a semiconductor heterostructure with quantum dots by the method of liquid phase epitaxy.

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Study Of The Morphological And Electrical Properties Of Films Of Solid Solution Znxsn1-Хse Obtained By The Method Of Cmbd, Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, Rukhiddin T. Yuldoshov Jun 2019

Study Of The Morphological And Electrical Properties Of Films Of Solid Solution Znxsn1-Хse Obtained By The Method Of Cmbd, Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, Rukhiddin T. Yuldoshov

Euroasian Journal of Semiconductors Science and Engineering

The ZnXSn1-XSe solid solution films were fabricated by the chemical molecular beam deposition (CMBD) method. The sources used were ZnSe and SnSe compounds of stoichiometric composition at the substrate temperature of 5600С. The morphological and electrophysical properties of the ZnXSn1-XSe solid solution films are investigated. Scanning electron microscope images showed that the grain sizes of the films are 8÷20 microns. The structural parameters of the obtained films are given. The electrical conductivity of the films was 15 ÷ 1 • 10-6 (Ohm·cm) -1 depending on the composition of the solid solution.

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Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev Jun 2019

Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev

Euroasian Journal of Semiconductors Science and Engineering

The processes of formation of defects in silicon, doped by gadolinium are investigated by the method of DLTS. It is shown that in diffusion the introduction of Gd in the Si leads to the formation of deep levels with ionization energies Ec–0.23 eV, Ec–0.35 eV, Ec–0.41 eV and Ec–0.54 eV and a capture cross section of electrons n: 410-17cm-2, 210-15 cm2, 1.110-16 cm2 and 1.510-15 cm2, respectively, and in samples p-Si found only one level with Ev+0.32 eV.

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Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain, Khayrulla K. Aripov, Akhmed M. Abdullayev, Shunkurjon T. Toshmatov Jun 2019

Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain, Khayrulla K. Aripov, Akhmed M. Abdullayev, Shunkurjon T. Toshmatov

Euroasian Journal of Semiconductors Science and Engineering

The results of theoretical and experimental studies of the generalities of current-voltage characteristics curve formation of metal-oxide-semiconductor transistors of the common drain are presented. The principal difference between input and output characteristics of the common drain from the analogical characteristics in the common source is shown. The source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common drain are given. Combined families of source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common source and drain are obtained.

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Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova Jun 2019

Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova

Euroasian Journal of Semiconductors Science and Engineering

The possibility of detection of defects in silicon wafers by Fourier analysis of digital images obtained by laser introscopy is shown.

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Dc-Dc Converter For Electric Vehicle, Jason Y. Zhou, Nicholas James Mah Jun 2019

Dc-Dc Converter For Electric Vehicle, Jason Y. Zhou, Nicholas James Mah

Electrical Engineering

In this work, a DC-DC converter is designed for an electric vehicle. The DC-DC converter is designed to provide 500W with a 200-400V input and a 12-15V adjustable output. Electric vehicle sales are beginning to increase in popularity and the need for DC-DC converters to siphon power from the tractive system is not yet fully satisfied, especially for single-seater class vehicles. Additionally, improving performance in efficiency without sacrificing wide input voltage range can benefit future DC-DC converter designs. In the end, a forward active clamp DC-DC converter is designed and tested. Additionally, spreadsheet calculators, LTSpice simulations, and Matlab scripts were …

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Designing A Low-Cost Ultrasound Pulser, Andrea Huey Jun 2019

Designing A Low-Cost Ultrasound Pulser, Andrea Huey

Honors Theses

Ultrasound imaging allows for those studying living beings to see inside a subject without causing it harm. This allows for real-time images to be taken, leading to ease of observational research. However, while this technology is beneficial to those who utilize it, the devices used to create and receive ultrasound pulses can be incredibly complex, allowing for precise adjustment of the output signal and various other functions, and therefore expensive. The focus of this senior project is the design of a low-cost pulser for use with an ultrasound transducer. While it does not have all the high-level functions of the …

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Symmetry And Dopant Diffusion In Inverted Nanopyramid Arrays For Thin Crystalline Silicon Solar Cells, Seok Jun Han May 2019

Symmetry And Dopant Diffusion In Inverted Nanopyramid Arrays For Thin Crystalline Silicon Solar Cells, Seok Jun Han

Chemical and Biological Engineering ETDs

In this dissertation, we enhance the efficiency of thin flexible monocrystalline silicon solar cells by breaking symmetry in light trapping nanostructures and improving homogeneity in dopant concentration profile. These thin cells are potentially less expensive than conventional thick silicon cells by using less silicon material and making the cells more convenient to be handled when supported on polymer films. Moreover, these cells are widely applicable due to their flexibility and lightweight. However, for high efficiencies, these cells require effective light trapping and charge collection. We achieve these in cells based on 14-mm-thick free-standing silicon films with light-trapping arrays of nanopyramidal …

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Algorithmic Multi-Color Cmos Avalanche Photodiodes For Smart-Lighting Applications, Md Mottaleb Hossain May 2019

Algorithmic Multi-Color Cmos Avalanche Photodiodes For Smart-Lighting Applications, Md Mottaleb Hossain

Optical Science and Engineering ETDs

Future smart-lighting systems are expected to deliver adaptively color-tunable and high-quality lighting that is energy efficient while also offering integrated visible-light wireless communication services. To enable these systems at a commercial level, inexpensive and fast sensors with spectral-sensing capability are required. CMOS-compatible silicon avalanche photodiodes (APDs) can be an excellent fit to this problem due to their excellent sensitivity, high speeds and cost effectiveness; however, color sensing is a challenge without resorting to expensive spectral filters, as done in commercially. To address this challenge, we have recently designed and modeled a novel CMOS-compatible dual-junction APD. The device outputs two photocurrents …

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Prototyping A Capacitive Sensing Device For Gesture Recognition, Chenglong Lin May 2019

Prototyping A Capacitive Sensing Device For Gesture Recognition, Chenglong Lin

Computer Science and Computer Engineering Undergraduate Honors Theses

Capacitive sensing is a technology that can detect proximity and touch. It can also be utilized to measure position and acceleration of gesture motions. This technology has many applications, such as replacing mechanical buttons in a gaming device interface, detecting respiration rate without direct contact with the skin, and providing gesture sensing capability for rehabilitation devices. In this thesis, an approach to prototype a capacitive gesture sensing device using the Eagle PCB design software is demonstrated. In addition, this paper tested and evaluated the resulting prototype device, validating the effectiveness of the approach.

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Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez May 2019

Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez

Electrical Engineering Undergraduate Honors Theses

High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of power electronic systems. This study presents an ongoing research effort to develop a high-temperature package for optocouplers to operate at higher temperature compared with commercial devices. Low temperature co-fired ceramic (LTCC) was used as the substrate. Bare die commercial LED and photodetectors were attached to the substrate and tested for functionality. Preliminary results show enhanced performance at elevated temperatures compared to a commercial optocoupler device.

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Synchrophasor-Based Fault Location Detection And Classification, In Power Systems, Using Artificial Intelligence, Hemal Falak May 2019

Synchrophasor-Based Fault Location Detection And Classification, In Power Systems, Using Artificial Intelligence, Hemal Falak

Graduate Theses and Dissertations

With the introduction of sophisticated electronic gadgets which cannot sustain interruption in the provision of electricity, the need to supply uninterrupted and reliable power supply, to the consumers, has become a crucial factor in the present-day world. Therefore, it is customary to correctly identify fault locations in an electrical power network, in order to rectify faults and restore power supply in the minimum possible time. Many automated fault location detection algorithms have been proposed, however, prior art requires topological and physical information of the electrical power network. This thesis presents a new method of detecting fault locations, in transmission as …

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Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant May 2019

Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant

Graduate Theses and Dissertations

The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …

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A Silicon Germanium Cmos Linear Voltage Regulator For Wireless Agricultural Applications, Aminta Naidili Castillo Robles May 2019

A Silicon Germanium Cmos Linear Voltage Regulator For Wireless Agricultural Applications, Aminta Naidili Castillo Robles

Graduate Theses and Dissertations

This thesis presents the design, simulation and test results of a silicon germanium (SiGe) complementary metal-oxide-semiconductor (CMOS) linear regulator. The objective of the circuit is to power other analog devices regardless of the load current and input voltage changes. The application of this regulator is to be part of a project developing a miniaturized semiconductor platform that can be inserted into stems of crops in order to measure data inside the plant and then send it wirelessly to the user. The linear regulator was designed on a BiCMOS SiGe 0.13µm which is a GlobalFoundries process. It has been tested at …

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Model Development And Assessment Of The Gate Network In A High-Performance Sic Power Module, William Austin Curbow May 2019

Model Development And Assessment Of The Gate Network In A High-Performance Sic Power Module, William Austin Curbow

Graduate Theses and Dissertations

The main objective of this effort is to determine points of weakness in the gate network of a high-performance SiC power module and to offer remedies to these issues to increase the overall performance, robustness, and reliability of the technology. In order to accomplish this goal, a highly accurate model of the gate network is developed through three methods of parameter extraction: calculation, simulation, and measurement. A SPICE model of the gate network is developed to analyze four electrical issues in a high-speed, SiC-based power module including the necessary internal gate resistance for damping under-voltage and over-voltage transients, the disparity …

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Bgaas Alloy Semiconductors For Lasers On Silicon, Joshua Mcarthur May 2019

Bgaas Alloy Semiconductors For Lasers On Silicon, Joshua Mcarthur

Mechanical Engineering Undergraduate Honors Theses

In the world of semiconductors today, there is a large dissonance between optical devices and electrical application. Due to the limitations of electron transport, photonic integrated circuits are soon-to-be vital in fields like telecommunications and sensing. Right now, these PIC’s are mostly made from indium phosphide. Due to its ubiquitous nature, however, there is a huge push to integrate efficient optics with silicon. It’s cheap, abundant, dope-able, and our electronic infrastructure is based on it. The reason why silicon photonics aren’t already commercialized is because of silicon’s indirect bandgap—it is inefficient with optical applications. The problem with combining direct gap …

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Electrophysical Properties Of Multilayered Photo-Sensitive Structures With Barriers Of Metal-Semiconductor, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Feruza A. Giyasova, Oybek A. Abdulkhaev Apr 2019

Electrophysical Properties Of Multilayered Photo-Sensitive Structures With Barriers Of Metal-Semiconductor, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Feruza A. Giyasova, Oybek A. Abdulkhaev

Euroasian Journal of Semiconductors Science and Engineering

The results of studies aimed at creating photodiode structures with a spectral range of 0.85÷0.9 µm and 1.31÷1.55 µm with an area of 3x4 mm2, which are obtained by successive vacuum deposition of cadmium sulfide and indium phosphide layers on a doped gallium arsenide substrate doped with oxygen with a specific resistance of 1∙107 Ohm∙sm. A distinctive feature of the obtained Au-vGaAs photodiode: O-nCdS-nInP-Au structures is the two-sided sensitivity and the presence of the amplification effect of the primary photocurrent (especially in the impurity region of the spectrum) and low dark current values (of the order of 10 nA) at …

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Stabilizing Action Of Sodium Citrate When Receiving Silver Nanoparticles By The Method Of Chemical Restoration, Komil M. Mukimov, Shamil M. Sharipov, Tal’At S. Asilov, Asliddin Kh. Bakhriddinov Apr 2019

Stabilizing Action Of Sodium Citrate When Receiving Silver Nanoparticles By The Method Of Chemical Restoration, Komil M. Mukimov, Shamil M. Sharipov, Tal’At S. Asilov, Asliddin Kh. Bakhriddinov

Euroasian Journal of Semiconductors Science and Engineering

The results of the synthesis of colloidal silver nanoparticles by the method of chemical reduction by ascorbic acid in the presence of sodium citrate are presented. The use of ascorbic acid as a reducing agent allows the synthesis of nanoparticles at room temperature. This makes it possible to study the mechanisms of the stabilizing effect of sodium citrate in the process of obtaining nanoparticles.

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