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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov
Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov
Euroasian Journal of Semiconductors Science and Engineering
X-ray diffraction studies showed that the resulting film has a sphalerite structure and is single-crystal with the (100) orientation. The lattice parameter of the film is af = 0.56697 nm. By atomic force microscope was shown the possibility of obtaining a semiconductor heterostructure with quantum dots by the method of liquid phase epitaxy.
Features Of Diffusion In Epitaxial Cosi2 Films Grown On The Surface Of Fluorete Of Deep Levels In Silicon Doped By Tungsten, Bakhrom E. Egamberdiev, Shokhruh A. Sayfulloev
Features Of Diffusion In Epitaxial Cosi2 Films Grown On The Surface Of Fluorete Of Deep Levels In Silicon Doped By Tungsten, Bakhrom E. Egamberdiev, Shokhruh A. Sayfulloev
Euroasian Journal of Semiconductors Science and Engineering
The paper presents the results of the analysis of the epitaxial film CoSi2/Si/CaF2(100) grown by molecular beam epitaxy. It is proved that under certain conditions of heat treatment, so-called epitaxial silicides are formed on the crystal structure, which can play the role of conductive layers or metal coatings. The data obtained allow us to draw conclusions about the morphology of the film and the nature of diffusion in the CoSi2 layer.