Electronic Devices and Semiconductor Manufacturing Commons^™

Lna Lowers Noise, Raises Oip3 At 3.5 Ghz, Chin-Leong Lim

Chin-Leong Lim

A 3.5 GHz LNA with good noise figure, gain and linearity performances has been designed around a low-cost, QFN2x2-packaged monolithic integrated circuit (MMIC). Incorporation of bias regulator, ESD protection and stability network at chip-level reduces the external component count to 12. The proprietary 0.25 um EPHEMT process achieves +15-dB gain in single stage and less than 1 dB noise figure at 3.5 GHz.

Setting New Noise Performance Benchmarks Using Wideband Low-Noise High-Linearity Lnas, Chin-Leong Lim

Chin-Leong Lim

Objective: to design a 900 MHz Low-Noise Amplifier (LNA) using a MMIC fabricated on a new ultra low noise GaAs ePHEMT process. To demonstrate a new noise performance bench mark (F = 0.3 dB at IRL ≤ - 15 dB) for the plastic-packaged device class.

Material: The LNA consists of a Microwave Monolithic Integrated Circuit (MMIC) and 9 passive components mounted on a 21.5x18 mm2 Rogers RO4350 micro-strip PCB. The MMIC, which comprises a common-source amplifier and temperature-tracking active bias, is fabricated on a new GaAs ePHEMT process optimized for noise. As loss in the input matching network is proportional …