Electronic Devices and Semiconductor Manufacturing Commons^™

Modeling All Spin Logic: Multi-Magnet Networks Interacting Via Spin Currents, Srikant Srinivasan

Srikant Srinivasan

All-spin logic (ASL) represents a new approach to information processing where the roles of charges and capacitors in CMOS are played by spins and magnets. This paper (1) summarizes our earlier work on the input-output isolation and intrinsic directivity of ASL devices, (2) uses an experimentally benchmarked simulator for multimagnet networks coupled by spin transport channels to demonstrate a combinational NAND gate, and (3) describes the natural mapping of such ASL networks into neuromorphic circuits suitable for hybrid analog/digital information processing.

Wideband Voltage Variable Attenuator With Fewer Components, Chin-Leong Lim

Chin-Leong Lim

RF/microwave amplifying devices have unit-to-unit gain variability. So, in some critical applications such as the low noise amplifier (LNA) in cellular basestations, the gain has to be adjusted in production using a voltage-variable attenuators (VVA). Constant impedance VVAs such as the PI and the bridged-TEE topologies require between 14 to 18 components, including 2 to 4 active devices, but their large dynamic (attenuation) range is wasted in this amplifier gain adjustment application. To create a more economical and smaller VVA for amplifier gain adjustment, we investigated a new circuit configuration comprising one active and four passive components. This paper describes …

Response Characterization Of Electroactive Polymers As Mechanical Sensors, G. Alici, Geoffrey M. Spinks, J. D. Madden, Y. Wu, G G. Wallace

Gordon Wallace

The characterization of the dynamic response (including transfer function identification) of trilayer polypyrrole (PPy) type conducting polymer sensors is presented. The sensor was built like a cantilever beam with the free end stimulated through a mechanical lever system, which provided displacement inputs. The voltage generated and current passing between the two outer PPy layers as a result of the input was measured to model the output/input behavior of the sensors based on their experimental current/displacement and voltage/displacement frequency responses. We specifically targeted the low-frequency behavior of the sensor as it is a relatively slowsystem. Experimental transfer function models were generated …

Vva Extends Bw And Dynamic Range, Chin-Leong Lim

Chin-Leong Lim

Voltage-variable attenuators (VVAs) enable gain adjustment in a wide range of applications, including in cable-television (CATV), satellite-television (SATV) systems, and even test equipment and measurement systems. The PI VVA configuration using PIN diodes is ubiquitous in CATV and SATV systems owing to its low part count, small size, constant impedance, high linearity, and multi-decade bandwidth. Presently, this class of VVAs have been under severe miniaturization pressure in order to shrink end-product size. To create the industry's smallest CATV/SATV-suitable VVA, we integrated all necessary components into a multi-chip-on-board (MCOB) package measuring 3.8 x 3.8 x 1.0 mm (14 mm square footprint). …

Fabricate An 8.35-Ghz Frequency Synthesizer, A. Attaran, Hossein Ameri Mahabadi, M. Moghavvemi

Hossein Ameri Mahabadi

The article presents information on designing a low-noise frequency synthesizer for achieving low-phase-noise outputs past 8 GHz for digital microwave radios (DMRs). These synthesizers can be used with the DMRs, depending on advanced digital modulation such as quadrature-amplitude-modulation (QAM) and quadrature-phase-shift-keying (QPSK) formats.

Exposing To Emf, Mahmoud Moghavvemi, Farhang Alijani, Hossein Ameri Mahabadi, Maryami Ashayer Soltan

Hossein Ameri Mahabadi

No abstract provided.

Assembly Of Low Phase Noise Sub-Millimeter Wave Local Oscillator In Ku Band Frequency, M. Moghavvemi, Hossein Ameri Mahabadi, A. Attaran

Hossein Ameri Mahabadi

A design and fabrication of a dual-band synthesizer device is presented in this paper. The noise analysis in synthesizer loop block component is modeled individually. The Design methodology is elaborated along with the test results. The initial frequency synthesizer in 1.8-2.4GHz frequency range (L and S-band) is designed and it is multiplied by 8. Microstrip bandpass filters (LFCN) are used to filter out the spurious frequency contents; the final output frequency is 14-20GHz (Ku-band). Phase noise investigation, design steps, filter assembling of 14-20GHz synthesizer is presented in this paper.

Novel Client Booking System In Klcc Twin Tower Bridge, Hossein Ameri Mahabadi, R. Ameri

Hossein Ameri Mahabadi

This system should help managing the visitors and tour guides as well as scheduling tours to visit “Petronas Twin Towers Sky Bridge”. The system should at least support the following characteristics. It should keep track of visitors and or tourists. It should keep information about tour guides and their working hour and other related information about such employees. The administrators should be able to schedule their visiting hours. This is a work-flow system and it need to keep track of daily visitors. The requirement was meant for this system is straight forward and very clear with so little complexity. On …

A Compact Analytical Design Of Dual-Loop 18 Ghz Frequency Synthesizer To Enhance Signal Reliability In Digital Millimeter Radio Link System, M. Moghavvemi, Hossein Ameri Mahabadi, A. Attaran

Hossein Ameri Mahabadi

In this paper a high resolution dual-loop 17.7–19.7 GHz frequency synthesizer is presented which is compatible with ITU-R (F.595-6) standards. The investigations of phase noise and spur frequency contents are discussed in detail. The simulated and measured phase noise and spur frequency contents are similar to one another. Phase noise of –81 dBc/Hz in 17.7 GHz at 10 KHz offset frequency is measured by (HP8560) series Spectrum analyzer and it matches with predicted measurements.

Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen

Albert B Chen

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.

Lna Lowers Noise, Raises Oip3 At 3.5 Ghz, Chin-Leong Lim

Chin-Leong Lim

A 3.5 GHz LNA with good noise figure, gain and linearity performances has been designed around a low-cost, QFN2x2-packaged monolithic integrated circuit (MMIC). Incorporation of bias regulator, ESD protection and stability network at chip-level reduces the external component count to 12. The proprietary 0.25 um EPHEMT process achieves +15-dB gain in single stage and less than 1 dB noise figure at 3.5 GHz.

Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet R. Dokmeci, Kai-Tak Wan

Kai-tak Wan

We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.

Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci

Mehmet R. Dokmeci

Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the …

Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet Dokmeci, Kai-Tak Wan

Mehmet R. Dokmeci

We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.

Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao

Mehmet R. Dokmeci

We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.

Analysis Of Scratches Formed On Oxide Surface During Chemical Mechanical Planarization, Jae-Gon Choi, Y. Nagendra Prasad, In-Kwon Kim, In-Gon Kim, Woo-Jin Kim, Ahmed A. Busnaina, Jin-Goo Park

Ahmed A. Busnaina

Scratch formation on patterned oxide wafers during the chemical mechanical planarization process was investigated. Silica and ceria slurries were used for polishing the experiments to observe the effect of abrasives on the scratch formation. Interlevel dielectric patterned wafers were used to study the scratch dimensions, and shallow trench isolation patterned wafers were used to study the effect of polishing parameters, such as pressure and rotational speed (head/platen). Similar shapes of scratches (chatter type) were observed with both types of slurries. The length of the scratch formed might be related to the period of contact between the wafer and the pad. …

Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci

Ahmed A. Busnaina

Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the …

Unidirectional Information Transfer With Cascaded All Spin Logic Devices: A Ring Oscillator, Srikant Srinivasan

Srikant Srinivasan

The authors have presented the first simulator that simultaneously describes magnetization dynamics as well as spin transport in multi-magnet ASL networks and used it to demonstrate the possibility of large scale functional spin logic blocks through the example of an All Spin ring oscillator.

Interfacial And Electrokinetic Characterization Of Ipa Solutions Related To Semiconductor Wafer Drying And Cleaning, Jin-Goo Park, Sang-Ho Lee, Ju-Suk Ryu, Yi-Koan Hong, Tae-Gon Kim, Ahmed A. Busnaina

Ahmed A. Busnaina

In this study, the interfacial and electrokinetic phenomena of mixtures of isopropyl alcohol (IPA) and deionized (DI) water in relation to semiconductor wafer drying is investigated. The dielectric constant of an IPA solution linearly decreased from 78 to 18 with the addition of IPA to DI water. The viscosity of IPA solutions increased as the volume percentage of IPA in DI water increased. The zeta potentials of silica particles and silicon wafers were also measured in IPA solutions. The zeta potential approached neutral values as the volume ratio of IPA in DI water increased. A surface tension decrease from 72 …

Experimental And Analytical Study Of Submicrometer Particle Removal From Deep Trenches, Kaveh Bakhtari, Rasim O. Guldiken, Ahmed A. Busnaina, Jin-Goo Park

Ahmed A. Busnaina

Particle removal from patterned wafers and trenches presents a tremendous challenge in semiconductor manufacturing. In this paper, the removal of 0.3 and 0.8 µm polystyrene latex (PSL) particles from high-aspect-ratio 500 µm deep trenches is investigated. An experimental, analytical, and computational study of the removal of submicrometer particles at different depths inside the trench is presented. Red fluorescent polystyrene latex (PSL) particles were used to verify particle removal. The particles are counted using scanning fluorescent microscopy. A single-wafer megasonic tank is used for the particle removal. The results show that once a particle is removed from the walls or the …

Experimental And Numerical Investigation Of Nanoparticle Removal Using Acoustic Streaming And The Effect Of Time, Kaveh Bakhtari, Rasim O. Guldiken, Prashanth Makaram, Ahmed A. Busnaina, Jin-Goo Park

Ahmed A. Busnaina

Theremoval of nanoparticles is becoming increasingly challenging as the minimumlinewidth continues to decrease in semiconductor manufacturing. In this paper,the removal of nanoparticles from flat substrates using acoustic streamingis investigated. Bare silicon wafers and masks with a 4 nmsilicon cap layer are cleaned. The silicon-cap films are usedin extreme ultraviolet masks to protect Mo–Si reflective multilayers. Theremoval of 63 nm polystyrene latex (PSL) particles from these substratesis conducted using single-wafer megasonic cleaning. The results show higherthan 99% removal of PSL nanoparticles. The results also showthat dilute SC1 provides faster removal of particles, which isalso verified by the analytical analysis. Particle removal …

Experimental Study Of Shoot-Through Control Methods For Z-Source Inverter, Omar Ellabban, Joeri Van Mierlo, Philippe Lataire

Omar Ellabban

This paper presents a simulation and experimental comparative analysis of the Z-source inverter (ZSI) with four different shoot-through (ST) control methods, namely: the simple boost control, the maximum boost control, the maximum constant boost control and the modified space vector modulation boost control methods. A review of these methods is presented with a summary of all expressions. A prototype of a 30 kW ZSI is designed and implemented. The eZdsp™ F2808 evaluation board is used for the realization of the shoot-through control methods and the real time workshop (RTW) is used for automatic code generation. The paper compares between the …

Multifrequency Wilkinson Power Divider Using Microstrip Nonuniform Transmission Lines, M. Khalaj-Amirhossein, M. Moghavvemi, Hossein Ameri Mahabadi

Hossein Ameri Mahabadi

A new idea is proposed to modify the conventional Wilkinson power dividers to operate at two or several desired frequencies. The proposed structure contains two Microstrip Nonuniform Transmission Lines (MNTLs) instead of two uniform ones with nearly the same length at the minimum frequency. The strip width of MNTLs is considered variable and is written as a truncated Fourier series. Three nonuniform power dividers are designed and one of them operating at frequencies 1.0, 2.8, and 4.5 GHz is fabricated and measured. The measured results of the fabricated diplexer have a good agreement with the theoretical results.

Body-Biased Vco Tunes 12 To 16 Ghz, M. Moghavvemi, Hossein Ameri Mahabadi, A. Attaran

Hossein Ameri Mahabadi

This body-biased voltage-controlled oscillator provides reasonably good phase-noise performance over a broad tuning range with relatively low power consumption and low jitter timing noise in the time domain.

Control Of A Bidirectional Z-Source Inverter Forelectric Vehicle Applications In Different Operation Modes, Omar Ellabban, Joeri Van Mierlo, Philippe Lataire

Omar Ellabban

This paper proposes two control strategies for the bidirectional Z-source inverters (BZSI) supplied by batteries for electric vehicle applications. The first control strategy utilizes the indirect field-oriented control (IFOC) method to control the induction motor speed. The proposed speed control strategy is able to control the motor speed from zero to the rated speed with the rated load torque in both motoring and regenerative braking modes. The IFOC is based on PWM voltage modulation with voltage decoupling compensation to insert the shoot-through state into the switching signals using the simple boost shoot-through control method. The parameters of the four PI …

A Dsp Based Dual Loop Digital Controller Design And Implementation Of A High Power Boost Converter For Hybrid Electric Vehicles Applications, Omar Ellabban, Joeri Van Mierlo, Philippe Lataire

Omar Ellabban

This paper presents a DSP based direct digital control design and implementation for a high power boost converter. A single loop and dual loop voltage control are digitally implemented and compared. The real time workshop (RTW) is used for automatic real-time code generation. Experimental results of a 20 kW boost converter based on the TMS320F2808 DSP during reference voltage changes, input voltage changes, and load disturbances are presented. The results show that the dual loop control achieves better steady state and transient performance than the single loop control. In addition, the experimental results validate the effectiveness of using the RTW …

Microstrip Diplexers With Double-Stub Bandpass Filters, M. Khalaj-Amirhosseini, M. Moghavvemi, Hossein Ameri Mahabadi, A. Attaran

Hossein Ameri Mahabadi

This paper presents a microstrip diplexer using two Double-Stub Band-Pass Filters (DS-BPFs), composed of several double-stubs connected to a main microstrip line. Each DS-BPF has a null at the center frequency of the other. Therefore, these types of filters are suitable for diplexers with two near frequencies. A diplexer at frequencies 5.875 and 6.225 GHz is designed, fabricated and measured. Measured results of the fabricated diplexer have a good agreement with the calculated results.

Design And Implementation Of A Dsp Based Dual-Loop Capacitor Voltage Control Of The Z-Source Inverter, Omar Ellabban, Joeri Van Mierlo, Philippe Lataire

Omar Ellabban

The Z-source inverter is a recently proposed single stage converter topology with buck-boost capabilities. This paper proposes a dual-loop capacitor voltage control, with outer voltage loop and inner current loop, of the Z-source inverter (ZSI). Both controller are designed based on a third order small signal model of the ZSI using the direct digital design method. Real-time control algorithm is implemented using DSP linked with MATLAB real time workshop (RTW) as rapid prototyping tool. The feasibility of the proposed dual loop control method has been verified by the simulation and experimental results.

Setting New Noise Performance Benchmarks Using Wideband Low-Noise High-Linearity Lnas, Chin-Leong Lim

Chin-Leong Lim

Objective: to design a 900 MHz Low-Noise Amplifier (LNA) using a MMIC fabricated on a new ultra low noise GaAs ePHEMT process. To demonstrate a new noise performance bench mark (F = 0.3 dB at IRL ≤ - 15 dB) for the plastic-packaged device class.

Material: The LNA consists of a Microwave Monolithic Integrated Circuit (MMIC) and 9 passive components mounted on a 21.5x18 mm2 Rogers RO4350 micro-strip PCB. The MMIC, which comprises a common-source amplifier and temperature-tracking active bias, is fabricated on a new GaAs ePHEMT process optimized for noise. As loss in the input matching network is proportional …

Switching Energy-Delay Of All Spin Logic Devices, Srikant Srinivasan

Srikant Srinivasan

A recent proposal called all spin logic (ASL) proposes to store information in nanomagnets that communicate with spin currents in order to construct spin based digital circuits. We present a coupled magnetodynamics/spin-transport model for ASL devices that is based on established physics and is benchmarked against available experimental data. This model is used to show the linear dependence of switching energy and quadratic dependence of energy-delay of ASL devices on the number of Bohr magnetons comprising a nanomagnet. A scaling scheme that could lower the energy-delay of spin-torque switching while maintaining thermal stability is discussed.