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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Degradation Uniformity Of Rf-Power Gaas Phemts Under Electrical Stress, Anita Villanueva, Jesus Del Alamo, Takayuki Hisaka, Kazuo Hayashi, Mark Somerville
Degradation Uniformity Of Rf-Power Gaas Phemts Under Electrical Stress, Anita Villanueva, Jesus Del Alamo, Takayuki Hisaka, Kazuo Hayashi, Mark Somerville
Mark Somerville
We have studied the electrical degradation of RF-power PHEMTs by means of in situ 2-D light-emission measurements. Electroluminescence originates in the recombination of holes that have been generated by impact ionization. The local light intensity, thus, maps the electric-field distribution at the drain side of the device. This allows us to probe the uniformity of electrical degradation due to electric-field-driven mechanisms. We find that electrical degradation proceeds in a highly nonuniform manner across the width of the device. In an initial phase, degradation takes place preferentially toward the center of the gate finger. In advanced stages of degradation, the edges …
Lna Lowers Noise, Raises Oip3 At 3.5 Ghz, Chin-Leong Lim
Lna Lowers Noise, Raises Oip3 At 3.5 Ghz, Chin-Leong Lim
Chin-Leong Lim
A 3.5 GHz LNA with good noise figure, gain and linearity performances has been designed around a low-cost, QFN2x2-packaged monolithic integrated circuit (MMIC). Incorporation of bias regulator, ESD protection and stability network at chip-level reduces the external component count to 12. The proprietary 0.25 um EPHEMT process achieves +15-dB gain in single stage and less than 1 dB noise figure at 3.5 GHz.
Setting New Noise Performance Benchmarks Using Wideband Low-Noise High-Linearity Lnas, Chin-Leong Lim
Setting New Noise Performance Benchmarks Using Wideband Low-Noise High-Linearity Lnas, Chin-Leong Lim
Chin-Leong Lim
Objective: to design a 900 MHz Low-Noise Amplifier (LNA) using a MMIC fabricated on a new ultra low noise GaAs ePHEMT process. To demonstrate a new noise performance bench mark (F = 0.3 dB at IRL ≤ - 15 dB) for the plastic-packaged device class.
Material: The LNA consists of a Microwave Monolithic Integrated Circuit (MMIC) and 9 passive components mounted on a 21.5x18 mm2 Rogers RO4350 micro-strip PCB. The MMIC, which comprises a common-source amplifier and temperature-tracking active bias, is fabricated on a new GaAs ePHEMT process optimized for noise. As loss in the input matching network is proportional …
Research Highlights, Grigory Simin