Electronic Devices and Semiconductor Manufacturing Commons^™

1+N Network Protection For Mesh Networks: Network Coding-Based Protection Using P-Cycles And Protection Paths, Ahmed Kamal, Aditya Ramamoorthy

Ahmed Kamal

A method and system for providing protection of multiple communication sessions using the bandwidth resources on the order of those required to protect a single communication session. This is facilitated through the use of network coding on a protection cycle. Transmissions from all connections are coded together using network coding and transmitted in two different directions on a cycle, so that the signal can be recovered by the receiver in two ways: on the working path, and on the protection (cycle) path.

New Flexible Channels For Room Temperature Tunneling Field Effect Transistors, Boyi Hao, Anjana Asthana, Paniz K. Hazaveh, Paul L. Bergstrom, Douglas Banyai, Madhusudan A. Savaikar, John A. Jaszczak, Yoke Khin Yap

John Jaszczak

No abstract provided.

Science Behind The Magnetic Field Therapy, D. B. Thombre,, Megha D. Thombre

Innovative Research Publications IRP India

Magnetic therapy is the use of magnets to relieve pain in various areas of the body. It is the simplest, cheapest and entirely painless system of treatment with no side effects. In present article, discussion of fundamental aspect about the application of magnetic field (Natural and artificial) and how it apply to the human body with suggestions. Magnetic field is produce by magnet or electromagnetic generating devices are able to penetrate the human body because human body is magnetic hence magnetic field affect the functioning of human body. Suggestions are, High blood pressure person sleep with foots towards west and …

X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry

Krishna C. Mandal

No abstract provided.

Evidence For Amphoteric Behavior Of Ru On Cdte Surfaces, D. N. Bose, S. Basu, K. C. Mandal, D. Mazumdar

Krishna C. Mandal

No abstract provided.

Evidence For Amphoteric Behavior Of Ru On Cdte Surfaces, D. N. Bose, S. Basu, K. C. Mandal, D. Mazumdar

Krishna C. Mandal

No abstract provided.

X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Novel Chemical Preparative Route For Semiconducting Mose2 Thin Films, K. C. Mandal, O. Savadogo

Krishna C. Mandal

No abstract provided.

Evidence For Amphoteric Behavior Of Ru On Cdte Surfaces, D. N. Bose, S. Basu, K. C. Mandal, D. Mazumdar

Krishna C. Mandal

No abstract provided.

Ferroelectric Batio3/Srtio3 Multilayered Thin Films For Room-Temperature Tunable Microwave Elements, Ming Liu, Chunrui Ma, Gregory Collins, Jian Liu, Chonglin Chen, Andy D. Alemayehu, Guru Subramanyam, Ying Ding, Jianghua Chen, Chao Dai, Yuan Lin, Melanie W. Cole

Guru Subramanyam

Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The microwave (5 to 18 GHz) dielectric measurements reveal that the multilayered thin films have excellent dielectric properties with large dielectric constant, low dielectric loss, and high dielectric tunability, which suggests that the as-grown ferroelectric multilayered thin films can be developed for room-temperature tunable microwave elements and related device applications.

A Reconfigurable Cpw Bow-Tie Antenna Using An Integrated Ferroelectric Thin Film Varactor, K. C. Pan, Dustin Brown, Guru Subramanyam, R. Penno, H. Jiang, C. H. Zhang, M. Patterson, David Kuhl, Kevin Leedy, Charles Cerny

Guru Subramanyam

A novel printed antenna with a frequency reconfigurable feed network is presented. The antenna consists of a bowtie structure patch radiating element in the inner space of an annulus that is on a nongrounded substrate with a ferroelectric (FE) Barium Strontium Titanate (BST) thin film. The bowtie patch is fed by a coplanar waveguide (CPW) transmission line that also includes a CPW-based BST shunt varactor. Reconfiguration of the compact 8 mm × 8 mm system has been demonstrated by shifting the antenna system’s operating frequency 500 MHz in the 7–9 GHz band by applying a DC voltage bias.

Feature Extraction Of Rich Texture Document, Innovative Research Publications Irp India, Prajwalita Satish Ravan, Shrinivas A. Patil, Swapnil V. Vanmore

Innovative Research Publications IRP India

We describe here an efficient algorithm for reassembling one or more unknown objects that have been broken or torn into a large number N of irregular fragments. The puzzle assembly problem has many application areas such as restoration and reconstruction of archeological findings, repairing of broken objects, solving jigsaw type puzzles, molecular docking problem, etc. The pieces usually include not only geometrical shape information but also visual information such as texture, color, and continuity of lines. This paper presents a new approach to the puzzle assembly problem that is based on using textural features and geometrical constraints. The texture of …

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska

Grigory Simin

We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.

Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur

Grigory Simin

We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °Cwith excellent …

Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Grigory Simin

The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …

Variable Attenuator Blends Dynamic Range, Linearity, Chin-Leong Lim

Chin-Leong Lim

A voltage variable attenuators (VVA) with compact dimensions and high linearity can be realized by connecting PIN diodes in the form of a π network. However this VVA's maximum frequency is limited to ~1 GHz because of signal leakage through the series diodes' parasitic capacitances. The ceiling frequency can significantly raised by resonating the parasitic capacitance with a parallel inductor. This technique has been previously demonstrated on a discrete design. To reduce component count and size, this work extends the technique to a standalone, highly-integrated module. This paper reports the performances achieved at 3.5 GHz.

The prototype's attenuation is adjustable …

Challenges And Opportunities For Multi-Functional Oxide Thin Films For Voltage Tunable Radio-Frequency/Microwave Components, Guru Subramanyam, M W. Cole, Nian X. Sun, Thottam S. Kalkur, Nick M. Sbrockey, Gary S. Tompa, Xiaomei Guo, Chonglin Chen, S P. Alpay, G A. Rossetti Jr., Kaushik Dayal, Long-Qing Chen, Darrell G. Schlom

Guru Subramanyam

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated …

Limiters Protect Adcs Without Adding Harmonics, Chin-Leong Lim

Chin-Leong Lim

High-speed Analogue to Digital Converters (ADC) are used for sampling at either the intermediate frequency (IF) or the radio frequency of wireless receivers. When the transmitter is nearby, the sampled signal can exceed the ADC’s maximum input level. So, amplitude limiting is necessary to prevent ADC damage or degradation. While automatic gain control is effective for controlling IF amplitude excursion in traditional single-carrier systems, it is not desirable in modern multi-carrier applications. One solution is to cap the IF amplitude excursion with a limiter. Unfortunately, a new problem is created – the strong non-linearity that is required of a good …

Lna Integrates Fast Shutdown Function, Chin-Leong Lim

Chin-Leong Lim

To minimize dead time in time domain duplex (TDD) transceiver, reception should ideally commence as soon as transmission ends. However, the low noise amplifier (LNA), which is typically shutdown during transmission to prevent device damage and receiver overload, can exhibit a turn-on delay. In older implementations, the shutdown function is external to the LNA device. So, one way to reduce part count and to miniaturize this class of LNA is to integrate the LNA and shutdown function in a microwave monolithic integrated circuit (MMIC). The integration also allows the shutdown circuit to be connected to the LNA at an optimum …

A Fast-Converging Mppt Technique For Photovoltaic System Under Fast Varying Solar Irradiation And Load Resistance, Saad Mekhilef

Saad Mekhilef

Under fast varying solar irradiation and load resistance, a fast-converging maximum power point tracking system is required to ensure the photovoltaic system response rapidly with minimum power losses. Traditionally, maximum power point locus was used to provide such a fast response. However, the algorithm requires extra control loop or intermittent disconnection of the PV module. Hence, this paper proposes a simpler fast-converging maximum power point tracking technique, which excludes the extra control loop and intermittent disconnection. In the proposed algorithm, the relationship between the load line and the I–V curve is used with trigonometry rule to obtain the fast response. …

Wave-Shaped Mask Of Fabricating Nano-Scaled Structure, Fang-Tzu Chuang

Fang-Tzu Chuang

A wave-shaped mask for fabricating a nano-scale structure is disclosed. The wave-shaped mask comprises an elastomeric transparent substrate having an upper surface and a lower surface, and a light-penetrable thin film layer disposed on the upper surface of the elastomeric transparent substrate. The upper surface of the elastomeric transparent substrate and the light-penetrable thin film layer are in a periodic wave shape, and the lower surface of the elastomeric transparent substrate is in a plate shape.

Low Loss Configuration For Integrated Pin-Schottky Limiters, Chin-Leong Lim

Chin-Leong Lim

Compared to the PIN diode limiter, the Schottky-PIN limiter improves receiver protection, but has a higher insertion loss. Low cost, plastic packaged diodes can further worsen the loss. Diode stacking, mesa diode construction, and isolating the Schottky diode with a high-impedance quarter wave line or a directional coupler can reduce loss, but detrimentally raises the limiting threshold and/or adds bulk or cost. The PIN-Schottky limiter’s insertion loss can be improved by integrating the diodes’ parasitic capacitances into a low pass ladder network, but this solution requires the PIN diode to have two anode connections. Recently, the PIN-Schottky limiter was integrated …

Novel Configuration For Multilevel Dc-Link Three-Phase Five-Level Inverter, Saad Mekhilef

Saad Mekhilef

new multilevel DC-link three-phase five-level voltage source inverter topology is introduced here. A multilevel DClink formed from single DC voltage supply and two cascaded half-bridge (CHB) power cells is connected to 12-switch threephase bridge in such a way that the proposed inverter produces five levels in the output voltage waveform. Compared to comparable inverters, such as symmetrical CHB and hybrid multilevel inverters, the proposed topology maximises the number of voltage levels and reduces the number of utilised DC voltage supplies, switches, gate driver circuits and installation area. A modified fundamental frequency modulation technique based on determination of switching states of …

Method Of Fabricating Wave-Shaped Mask For Photolithography And Exposure Method Of Fabricating Nano-Scaled Structure Using The Wave-Shaped Mask, Fang-Tzu Chuang

Fang-Tzu Chuang

A method of fabricating wave-shaped mask is disclosed. The method of fabricating wave-shaped mask comprises the steps of providing an elastomeric transparent substrate comprising an upper surface and a lower surface, applying a stable force to the elastomeric transparent substrate for deforming the elastomeric transparent substrate, forming a light-penetrable thin film layer on the upper surface of the elastomeric transparent substrate, and removing the force applying to the elastomeric transparent substrate, whereby the upper surface of the elastomeric transparent substrate and the light-penetrable thin film layer are in a periodic wave shape and the lower surface of the elastomeric transparent …

Boundary Control Of Dual-Output Boost Converter Using State-Energy Plane, Saad Mekhilef

Saad Mekhilef

A boundary control scheme for dual-output boost converter (DBC) with enhanced performance using second-order switching surface is presented in this study. The derivation of the switching surface is performed in state-energy plane rather than the state-plane to obtain a general geometrical representation that provides a good dynamic response during start-up and sudden load changes, achieving steady state in two switching actions. To illustrate the control characteristic and performance, a detailed mathematical analysis is fully developed and compared with other control methods for the DBC. The proposed control was simulated, implemented in a digital signal processor TMS320F2812, and tested using prototype …

Active Neutral Point Clamped Converter For Equal Loss Distribution, Saad Mekhilef

Prof. Dr. Saad Mekhilef

No abstract provided.

Modified Incremental Conductance Algorithm For Photovoltaic System Under Partial Shading Conditions And Load Variation, Saad Mekhilef

Saad Mekhilef

Under partial shading conditions, multiple peaks are observed in the power–voltage (P–V ) characteristic curve of a photovoltaic (PV) array, and the conventional maximum power point tracking (MPPT) algorithms may fail to track the global maximum power point (GMPP). Therefore, this paper proposes a modified incremental conductance (Inc Cond) algorithm that is able to track the GMPP under partial shading conditions and load variation. A novel algorithm is introduced to modulate the duty cycle of the dc–dc converter in order to ensure fast MPPT process. Simulation and hardware implementation are carried out to evaluate the effectiveness of the proposed algorithm …

Long-Term Wind Speed Forecasting And General Pattern Recognition Using Neural Networks, Saad Mekhilef

Saad Mekhilef

Long-term forecasting of wind speed has become a research hot spot in many different areas such as restructured electricity markets, energy management, and wind farm optimal design. However, wind energy with unstable and intermittent characteristics entails establishing accurate predicted data to avoid inefficient and less reliable results. The proposed study in this paper may provide a solution regarding the long-term wind speed forecast in order to solve the earlier-mentioned problems. For this purpose, two fundamentally different approaches, the statistical and the neural network-based approaches, have been developed to predict hourly wind speed data of the subsequent year. The novelty of …

New Three-Phase Multilevel Inverter With Reduced Number Of Power Electronic Components, Saad Mekhilef

Saad Mekhilef

In this paper, a new configuration of a three-phase five-level multilevel voltage-source inverter is introduced. The proposed topology constitutes the conventional three-phase two-level bridge with three bidirectional switches. A multilevel dc link using fixed dc voltage supply and cascaded half-bridge is connected in such a way that the proposed inverter outputs the required output voltage levels. The fundamental frequency staircase modulation technique is easily used to generate the appropriate switching gate signals. For the purpose of increasing the number of voltage levels with fewer number of power electronic components, the structure of the proposed inverter is extended and different methods …