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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

1+N Network Protection For Mesh Networks: Network Coding-Based Protection Using P-Cycles And Protection Paths, Ahmed Kamal, Aditya Ramamoorthy May 2017

1+N Network Protection For Mesh Networks: Network Coding-Based Protection Using P-Cycles And Protection Paths, Ahmed Kamal, Aditya Ramamoorthy

Ahmed Kamal

A method and system for providing protection of multiple communication sessions using the bandwidth resources on the order of those required to protect a single communication session. This is facilitated through the use of network coding on a protection cycle. Transmissions from all connections are coded together using network coding and transmitted in two different directions on a cycle, so that the signal can be recovered by the receiver in two ways: on the working path, and on the protection (cycle) path.


X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal Apr 2015

X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry Apr 2015

Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry

Krishna C. Mandal

No abstract provided.


X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal Apr 2015

X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Variable Attenuator Blends Dynamic Range, Linearity, Chin-Leong Lim Jan 2015

Variable Attenuator Blends Dynamic Range, Linearity, Chin-Leong Lim

Chin-Leong Lim

A voltage variable attenuators (VVA) with compact dimensions and high linearity can be realized by connecting PIN diodes in the form of a π network. However this VVA's maximum frequency is limited to ~1 GHz because of signal leakage through the series diodes' parasitic capacitances. The ceiling frequency can significantly raised by resonating the parasitic capacitance with a parallel inductor. This technique has been previously demonstrated on a discrete design. To reduce component count and size, this work extends the technique to a standalone, highly-integrated module. This paper reports the performances achieved at 3.5 GHz.

The prototype's attenuation is adjustable …


Limiters Protect Adcs Without Adding Harmonics, Chin-Leong Lim Dec 2014

Limiters Protect Adcs Without Adding Harmonics, Chin-Leong Lim

Chin-Leong Lim

High-speed Analogue to Digital Converters (ADC) are used for sampling at either the intermediate frequency (IF) or the radio frequency of wireless receivers. When the transmitter is nearby, the sampled signal can exceed the ADC’s maximum input level. So, amplitude limiting is necessary to prevent ADC damage or degradation. While automatic gain control is effective for controlling IF amplitude excursion in traditional single-carrier systems, it is not desirable in modern multi-carrier applications. One solution is to cap the IF amplitude excursion with a limiter. Unfortunately, a new problem is created – the strong non-linearity that is required of a good …


Lna Integrates Fast Shutdown Function, Chin-Leong Lim Nov 2014

Lna Integrates Fast Shutdown Function, Chin-Leong Lim

Chin-Leong Lim

To minimize dead time in time domain duplex (TDD) transceiver, reception should ideally commence as soon as transmission ends. However, the low noise amplifier (LNA), which is typically shutdown during transmission to prevent device damage and receiver overload, can exhibit a turn-on delay. In older implementations, the shutdown function is external to the LNA device. So, one way to reduce part count and to miniaturize this class of LNA is to integrate the LNA and shutdown function in a microwave monolithic integrated circuit (MMIC). The integration also allows the shutdown circuit to be connected to the LNA at an optimum …


A Fast-Converging Mppt Technique For Photovoltaic System Under Fast Varying Solar Irradiation And Load Resistance, Saad Mekhilef Nov 2014

A Fast-Converging Mppt Technique For Photovoltaic System Under Fast Varying Solar Irradiation And Load Resistance, Saad Mekhilef

Saad Mekhilef

Under fast varying solar irradiation and load resistance, a fast-converging maximum power point tracking system is required to ensure the photovoltaic system response rapidly with minimum power losses. Traditionally, maximum power point locus was used to provide such a fast response. However, the algorithm requires extra control loop or intermittent disconnection of the PV module. Hence, this paper proposes a simpler fast-converging maximum power point tracking technique, which excludes the extra control loop and intermittent disconnection. In the proposed algorithm, the relationship between the load line and the I–V curve is used with trigonometry rule to obtain the fast response. …


Low Loss Configuration For Integrated Pin-Schottky Limiters, Chin-Leong Lim Jul 2014

Low Loss Configuration For Integrated Pin-Schottky Limiters, Chin-Leong Lim

Chin-Leong Lim

Compared to the PIN diode limiter, the Schottky-PIN limiter improves receiver protection, but has a higher insertion loss. Low cost, plastic packaged diodes can further worsen the loss. Diode stacking, mesa diode construction, and isolating the Schottky diode with a high-impedance quarter wave line or a directional coupler can reduce loss, but detrimentally raises the limiting threshold and/or adds bulk or cost. The PIN-Schottky limiter’s insertion loss can be improved by integrating the diodes’ parasitic capacitances into a low pass ladder network, but this solution requires the PIN diode to have two anode connections. Recently, the PIN-Schottky limiter was integrated …


Novel Configuration For Multilevel Dc-Link Three-Phase Five-Level Inverter, Saad Mekhilef Jun 2014

Novel Configuration For Multilevel Dc-Link Three-Phase Five-Level Inverter, Saad Mekhilef

Saad Mekhilef

new multilevel DC-link three-phase five-level voltage source inverter topology is introduced here. A multilevel DClink formed from single DC voltage supply and two cascaded half-bridge (CHB) power cells is connected to 12-switch threephase bridge in such a way that the proposed inverter produces five levels in the output voltage waveform. Compared to comparable inverters, such as symmetrical CHB and hybrid multilevel inverters, the proposed topology maximises the number of voltage levels and reduces the number of utilised DC voltage supplies, switches, gate driver circuits and installation area. A modified fundamental frequency modulation technique based on determination of switching states of …


Modified Incremental Conductance Algorithm For Photovoltaic System Under Partial Shading Conditions And Load Variation, Saad Mekhilef Jan 2014

Modified Incremental Conductance Algorithm For Photovoltaic System Under Partial Shading Conditions And Load Variation, Saad Mekhilef

Saad Mekhilef

Under partial shading conditions, multiple peaks are observed in the power–voltage (P–V ) characteristic curve of a photovoltaic (PV) array, and the conventional maximum power point tracking (MPPT) algorithms may fail to track the global maximum power point (GMPP). Therefore, this paper proposes a modified incremental conductance (Inc Cond) algorithm that is able to track the GMPP under partial shading conditions and load variation. A novel algorithm is introduced to modulate the duty cycle of the dc–dc converter in order to ensure fast MPPT process. Simulation and hardware implementation are carried out to evaluate the effectiveness of the proposed algorithm …


Long-Term Wind Speed Forecasting And General Pattern Recognition Using Neural Networks, Saad Mekhilef Jan 2014

Long-Term Wind Speed Forecasting And General Pattern Recognition Using Neural Networks, Saad Mekhilef

Saad Mekhilef

Long-term forecasting of wind speed has become a research hot spot in many different areas such as restructured electricity markets, energy management, and wind farm optimal design. However, wind energy with unstable and intermittent characteristics entails establishing accurate predicted data to avoid inefficient and less reliable results. The proposed study in this paper may provide a solution regarding the long-term wind speed forecast in order to solve the earlier-mentioned problems. For this purpose, two fundamentally different approaches, the statistical and the neural network-based approaches, have been developed to predict hourly wind speed data of the subsequent year. The novelty of …


Limiting And Transient Performances Of A Low Loss Pin-Schottky Limiter, Chin-Leong Lim Nov 2013

Limiting And Transient Performances Of A Low Loss Pin-Schottky Limiter, Chin-Leong Lim

Chin-Leong Lim

The main cause of loss in the PIN-Schottky limiter is the diodes’ parasitic capacitances. Techniques to counter the parasitic capacitances include using bare chip, air cavity packaging, diode stacking, mesa construction, isolating the Schottky diode from the signal path and connecting the diodes to a low impedance node. But the aforementioned techniques either sacrifice cost, manufacturability, size, performances or thermal ruggedness. To reduce loss in the PIN-Schottky limiter, we re-configured its parasitics into a low pass ladder network. This paper reports on the new configuration’s changed large signal and transient performances. We observed improved isolation at 0.9 and 2.4 GHz, …


Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof Apr 2013

Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof

Radhey Shyam Meena

World cannot be imagined without electrical power. Generally the power is transmitted through transmission networks. This paper describes an original idea to eradicate the hazardous usage of electrical wires which involve lot of confusion in particularly organizing them. Imagine a future in which wireless power transfer is feasible: cell phones, household robots, mp3 players, laptop computers and other portable electronic devices capable of charging themselves without ever being plugged in freeing us from that final ubiquitous power wire. This paper includes the techniques of transmitting power without using wires with an efficiency of about 95% with non-radioactivemethods. In this paper …


Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma Mar 2013

Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma

Radhey Shyam Meena

Grid-connected solar PV dramatically changes the load profile of an electric utility customer. The expected widespread adoption of solar generation by customers on the distribution system poses significant challenges to system operators both in transient and steady state operation, from issues including voltage swings, sudden weather-induced changes in generation, and legacy protective devices designed with one-way power flow in mind


A Shade Tolerant Panel Design For Thin Film Photovoltaics, Sourabh Dongaonkar, Muhammad Alam Mar 2013

A Shade Tolerant Panel Design For Thin Film Photovoltaics, Sourabh Dongaonkar, Muhammad Alam

Sourabh Dongaonkar

We analyze the problem of partial shading of thin film photovoltaic (TFPV) panels, using full two dimensional circuit simulations. By accounting for the panel structure and typical array configurations, we can accurately account for the effect of various shading configurations at the cell and panel level. We demonstrate the limitation of external bypass diodes in protecting shaded cells from reverse breakdown, and explore the whole range of shading scenarios and their impact on reverse stress experienced by shaded cells. Based on the analysis, we identify the key aspects of shading problem, and formulate design rules for shadow aware geometrical design …


Reverse Stress Metastability Of Shunt Current In Cigs Solar Cells, Sourabh Dongaonkar, Erik Sheets, Rakesh Agrawal, Muhammad Alam Mar 2013

Reverse Stress Metastability Of Shunt Current In Cigs Solar Cells, Sourabh Dongaonkar, Erik Sheets, Rakesh Agrawal, Muhammad Alam

Sourabh Dongaonkar

Partial shading in thin film solar panels can result in reverse bias stress across shaded cells. Therefore, it is important to understand the effect of such reverse stress in commercially competitive PV technologies such as CIGS. In this paper, we systematically investigate the effect of moderate reverse bias on solution-processed CIGS solar cells. We subject the solar cells to varying degrees of reverse biases and continuously monitor the impact of the stress on dark current. We also explore the relaxation behavior of dark current following passive storage and the long term effect of the shadow stress on power output of …


Novel Three-Phase Asymmetrical Cascaded Multilevel Voltage Source Inverter, Saad Mekhilef Feb 2013

Novel Three-Phase Asymmetrical Cascaded Multilevel Voltage Source Inverter, Saad Mekhilef

Saad Mekhilef

Series connection of power cells in asymmetrical cascaded configurations helps to cancel redundant output levels and maximise the number of different levels generated by the inverter. A new configuration of three-phase multilevel asymmetrical cascaded voltage source inverter is presented. This structure consists of series-connected sub-multilevel inverters blocks. The number of utilised switches, insulated gate driver circuits, voltage standing on switches, installation area and cost are considerably reduced. Cascaded-cell DC voltages in each inverter leg form an arithmetic sequence with common difference of E. With the selected inverter DC sources, high-frequency pulse-width modulation (PWM) control methods can be effectively applied without …


Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza Feb 2013

Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass sensitivity.


Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza Feb 2013

Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of …


Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza Feb 2013

Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …


5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza Feb 2013

5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical …


Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza Feb 2013

Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza

Matteo Rinaldi

A nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same die have also …


Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza Feb 2013

Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to …


Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen Jan 2013

Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen

Albert B Chen

Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …


Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er. Jan 2013

Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er.

Radhey Shyam Meena

As solar photovoltaic power generation becomes more commonplace, the inherent intermittency of the solar resource poses one of the great challenges to those who would design and implement the next generation smart grid. Specifically, grid-tied solar power generation is a distributed resource whose output can change extremely rapidly, resulting in many issues for the distribution system operator with a large quantity of installed photovoltaic devices. Battery energy storage systems are increasingly being used to help integrate solar power into the grid. These systems are capable of absorbing and delivering both real and reactive power with sub-second response times. With these …


Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen Dec 2012

Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen

Albert B Chen

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.


Z-Source Inverter For Automotive Applications, Omar Ellabban, Joeri Van Mierlo Dec 2012

Z-Source Inverter For Automotive Applications, Omar Ellabban, Joeri Van Mierlo

Omar Ellabban

No abstract provided.


Capacitor Voltage Control Techniques Of The Z-Source Inverter: A Comparative Study, Omar Ellabban, Joeri Van Mierlo, Philippe Lataire Dec 2012

Capacitor Voltage Control Techniques Of The Z-Source Inverter: A Comparative Study, Omar Ellabban, Joeri Van Mierlo, Philippe Lataire

Omar Ellabban

The Z-source inverter (ZSI) is a recently proposed single-stage power conversion topology. It adds voltage boost capability for complementing the usual voltage buck operation of a traditional voltage source inverter (VSI) with improved reliability. In this paper, a single-loop and dual-loop capacitor voltage control techniques for the ZSI are digitally designed based on a third order small signal model of the ZSI, implemented using a digital signal processor (DSP) and compared. Simulation and experimental results of a 30 kW ZSI during input voltage changes, load disturbances and steady state operations are presented and compared. The results show that the dual-loop …


Multi-Hole Waveguide Directional Couplers, Mahmoud Moghavvemi, Hossein Ameri Mahabadi, Farhang Alijani Nov 2012

Multi-Hole Waveguide Directional Couplers, Mahmoud Moghavvemi, Hossein Ameri Mahabadi, Farhang Alijani

Hossein Ameri Mahabadi

1. Introduction The directional couplers are inherently assumed as four-port devices, which consisted of two transmission lines that are electromagnetically coupled to each other. The first port is named as input, and the second one as output or transmitted, the third one as sampling or coupled and the fourth one as isolated or terminated. By using a special design the input power is divided between output and coupled port in a certain ratio named coupling factor. The required value for coupling factor P1/P3 defines the range of applications for directional couplers. Based on the application, coupling factor could be any …