Electronic Devices and Semiconductor Manufacturing Commons^™

1+N Network Protection For Mesh Networks: Network Coding-Based Protection Using P-Cycles And Protection Paths, Ahmed Kamal, Aditya Ramamoorthy

Ahmed Kamal

A method and system for providing protection of multiple communication sessions using the bandwidth resources on the order of those required to protect a single communication session. This is facilitated through the use of network coding on a protection cycle. Transmissions from all connections are coded together using network coding and transmitted in two different directions on a cycle, so that the signal can be recovered by the receiver in two ways: on the working path, and on the protection (cycle) path.

X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry

Krishna C. Mandal

No abstract provided.

X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Variable Attenuator Blends Dynamic Range, Linearity, Chin-Leong Lim

Chin-Leong Lim

A voltage variable attenuators (VVA) with compact dimensions and high linearity can be realized by connecting PIN diodes in the form of a π network. However this VVA's maximum frequency is limited to ~1 GHz because of signal leakage through the series diodes' parasitic capacitances. The ceiling frequency can significantly raised by resonating the parasitic capacitance with a parallel inductor. This technique has been previously demonstrated on a discrete design. To reduce component count and size, this work extends the technique to a standalone, highly-integrated module. This paper reports the performances achieved at 3.5 GHz.

The prototype's attenuation is adjustable …

Limiters Protect Adcs Without Adding Harmonics, Chin-Leong Lim

Chin-Leong Lim

High-speed Analogue to Digital Converters (ADC) are used for sampling at either the intermediate frequency (IF) or the radio frequency of wireless receivers. When the transmitter is nearby, the sampled signal can exceed the ADC’s maximum input level. So, amplitude limiting is necessary to prevent ADC damage or degradation. While automatic gain control is effective for controlling IF amplitude excursion in traditional single-carrier systems, it is not desirable in modern multi-carrier applications. One solution is to cap the IF amplitude excursion with a limiter. Unfortunately, a new problem is created – the strong non-linearity that is required of a good …

Lna Integrates Fast Shutdown Function, Chin-Leong Lim

Chin-Leong Lim

To minimize dead time in time domain duplex (TDD) transceiver, reception should ideally commence as soon as transmission ends. However, the low noise amplifier (LNA), which is typically shutdown during transmission to prevent device damage and receiver overload, can exhibit a turn-on delay. In older implementations, the shutdown function is external to the LNA device. So, one way to reduce part count and to miniaturize this class of LNA is to integrate the LNA and shutdown function in a microwave monolithic integrated circuit (MMIC). The integration also allows the shutdown circuit to be connected to the LNA at an optimum …

Low Loss Configuration For Integrated Pin-Schottky Limiters, Chin-Leong Lim

Chin-Leong Lim

Compared to the PIN diode limiter, the Schottky-PIN limiter improves receiver protection, but has a higher insertion loss. Low cost, plastic packaged diodes can further worsen the loss. Diode stacking, mesa diode construction, and isolating the Schottky diode with a high-impedance quarter wave line or a directional coupler can reduce loss, but detrimentally raises the limiting threshold and/or adds bulk or cost. The PIN-Schottky limiter’s insertion loss can be improved by integrating the diodes’ parasitic capacitances into a low pass ladder network, but this solution requires the PIN diode to have two anode connections. Recently, the PIN-Schottky limiter was integrated …

Limiting And Transient Performances Of A Low Loss Pin-Schottky Limiter, Chin-Leong Lim

Chin-Leong Lim

The main cause of loss in the PIN-Schottky limiter is the diodes’ parasitic capacitances. Techniques to counter the parasitic capacitances include using bare chip, air cavity packaging, diode stacking, mesa construction, isolating the Schottky diode from the signal path and connecting the diodes to a low impedance node. But the aforementioned techniques either sacrifice cost, manufacturability, size, performances or thermal ruggedness. To reduce loss in the PIN-Schottky limiter, we re-configured its parasitics into a low pass ladder network. This paper reports on the new configuration’s changed large signal and transient performances. We observed improved isolation at 0.9 and 2.4 GHz, …

Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof

Radhey Shyam Meena

World cannot be imagined without electrical power. Generally the power is transmitted through transmission networks. This paper describes an original idea to eradicate the hazardous usage of electrical wires which involve lot of confusion in particularly organizing them. Imagine a future in which wireless power transfer is feasible: cell phones, household robots, mp3 players, laptop computers and other portable electronic devices capable of charging themselves without ever being plugged in freeing us from that final ubiquitous power wire. This paper includes the techniques of transmitting power without using wires with an efficiency of about 95% with non-radioactivemethods. In this paper …

Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma

Radhey Shyam Meena

Grid-connected solar PV dramatically changes the load profile of an electric utility customer. The expected widespread adoption of solar generation by customers on the distribution system poses significant challenges to system operators both in transient and steady state operation, from issues including voltage swings, sudden weather-induced changes in generation, and legacy protective devices designed with one-way power flow in mind

A Shade Tolerant Panel Design For Thin Film Photovoltaics, Sourabh Dongaonkar, Muhammad Alam

Sourabh Dongaonkar

We analyze the problem of partial shading of thin film photovoltaic (TFPV) panels, using full two dimensional circuit simulations. By accounting for the panel structure and typical array configurations, we can accurately account for the effect of various shading configurations at the cell and panel level. We demonstrate the limitation of external bypass diodes in protecting shaded cells from reverse breakdown, and explore the whole range of shading scenarios and their impact on reverse stress experienced by shaded cells. Based on the analysis, we identify the key aspects of shading problem, and formulate design rules for shadow aware geometrical design …

Reverse Stress Metastability Of Shunt Current In Cigs Solar Cells, Sourabh Dongaonkar, Erik Sheets, Rakesh Agrawal, Muhammad Alam

Sourabh Dongaonkar

Partial shading in thin film solar panels can result in reverse bias stress across shaded cells. Therefore, it is important to understand the effect of such reverse stress in commercially competitive PV technologies such as CIGS. In this paper, we systematically investigate the effect of moderate reverse bias on solution-processed CIGS solar cells. We subject the solar cells to varying degrees of reverse biases and continuously monitor the impact of the stress on dark current. We also explore the relaxation behavior of dark current following passive storage and the long term effect of the shadow stress on power output of …

Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass sensitivity.

Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of …

Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …

5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical …

Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza

Matteo Rinaldi

A nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same die have also …

Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to …

Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen

Albert B Chen

Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …

Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er.

Radhey Shyam Meena

As solar photovoltaic power generation becomes more commonplace, the inherent intermittency of the solar resource poses one of the great challenges to those who would design and implement the next generation smart grid. Specifically, grid-tied solar power generation is a distributed resource whose output can change extremely rapidly, resulting in many issues for the distribution system operator with a large quantity of installed photovoltaic devices. Battery energy storage systems are increasingly being used to help integrate solar power into the grid. These systems are capable of absorbing and delivering both real and reactive power with sub-second response times. With these …

Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen

Albert B Chen

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.

Terahertz And Microwave Detection Using Metallic Single Wall Carbon Nanotubes, Enrique Carrion

Enrique A Carrion

Carbon nanotubes (CNTs) are promising nanomaterials for high frequency applications due to their unique physical characteristics. CNTs have a low heat capacity, low intrinsic capacitance, and incredibly fast thermal time constants. They can also exhibit ballistic transport at low bias, for both phonons and electrons, as evident by their fairly long mean free paths. However, despite the great potential they present, the RF behavior of these nanostructures is not completely understood. In order to explore this high frequency regime we studied the microwave (MW) and terahertz (THz) response of individual and bundled single wall nanotube based devices. This thesis is …

Power Mems And Microengines, Alan Epstein, Stephen Senturia, G. Ananthasuresh, Arturo Ayon, Kenneth Breuer, Kuo-Shen Chen, Fredric Ehrich, Gautam Gauba, Reza Ghodssi, C. Groshenry, Stuart Jacobson, Jeffrey Lang, Chuang-Chia Lin, Amit Mehra, José Oscar Mur-Miranda, Steve Nagle, D. Orr, Ed Piekos, Martin Schmidt, Gregory Shirley, Mark Spearing, Choon Tan, Sheng-Yang Tzeng, Ian Waitz

José Oscar Mur-Miranda

MIT is developing a MEMS-based gas turbine generator. Based on high speed rotating machinery, this 1 cm diameter by 3 mm thick SiC heat engine is designed to produce 10-20 W of electric power while consuming 10 grams/hr of H2. Later versions may produce up to 100 W using hydrocarbon fuels. The combustor is now operating and an 80 W micro-turbine has been fabricated and is being tested. This engine can be considered the first of a new class of MEMS device, power MEMS, which are heat engines operating at power densities similar to those of the best large scale …

Determining Dominant Breakdown Mechanisms In Inp Hemts, Mark Somerville, Chris Putnam, Jesus Del Alamo

Mark Somerville

We present a new technique for determining the dominant breakdown mechanism in InAlAs-InGaAs high-electron mobility transistors. By exploiting both the temperature dependence and the bias dependence of different physical mechanisms, we are able to discriminate impact ionization gate current from tunneling and thermionic field emission gate current in these devices. Our results suggest that the doping level of the supply layers plays a key role in determining the relative importance of these two effects.

Strained Si On Insulator Technology: From Materials To Devices, T. Langdo, M. Currie, Z.-Y. Cheng, J. Fiorenza, M. Erdtmann, G. Braithwaite, C. Leitz, C. Vineis, J. Carlin, A. Lochtefeld, M. Bulsara, Isaac Lauer, Dimitri Antoniadis, Mark Somerville

Mark Somerville

SiGe-free strained Si on insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced capacitance and improved scalability of thin film silicon on insulator (SOI). We demonstrate fabrication of 20% Ge equivalent strain level SSOI substrates with Si thicknesses of 100 and 400 Å by hydrogen-induced layer transfer of strained Si layers from high quality graded SiGe virtual substrates. The substrate properties are excellent: wafer scale strained Si film thickness uniformities are better than 8%, strained Si surface roughnesses are better than 0.5 nm RMS, and robust tensile strain levels are …

An Autozeroing Floating-Gate Amplifier, Paul Hasler, Bradley Minch, Chris Diorio

Bradley Minch

We have developed a bandpass floating-gate amplifier that uses tunneling and pFET hot-electron injection to set its dc operating point adaptively. Because the hot-electron injection is an inherent part of the pFET's behavior, we obtain this adaptation with no additional circuitry. Because the gate currents are small, the circuit exhibits a high-pass characteristic with a cutoff frequency less than 1 Hz. The high-frequency cutoff is controlled electronically, as is done in continuous-time filters. We have derived analytical models that completely characterize the amplifier and that are in good agreement with experimental data for a wide range of operating conditions and …

Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.

Radhey Shyam Meena

Switchyard Provides the facilities for switching ,protection & Control of electric power. To handle high Voltage power with proper Safety measures. To isolate the noises coming from the grid with true 50Hz power SWITCH YARD IS IMPORTANT PART IN THERMAL PLANT. IN KALISINDH THERMAL 400KV AND 220KV SWITCH YARD LOCATED.

Itex2012 Gold Medal, Prof.Dr. Mahmoud Magha Vvemi, Hossein Ameri Mahabadi, Aliyar Attaran

Hossein Ameri Mahabadi

This is to certify that PROF.DR. MAHMOUD MAGHA VVEMI, HOSSEIN AMERI, ALIYAR ATTARAN has been awarded the ITEX GOLD MEDAL for the invention SIGNAL INTEGRITY ENHANCEMENT IN C-BAND RADIO LINK SYSTEM CONSIDERING JITTER AND PHASE PRECISION at the 23rd International Invention, Innovation & Technology Exhibition ITEX2012 Kuala Lumpur, Malaysia 17th_ 19th May 2012

Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang

Sherra E. Kerns

On the basis of the analysis of all the thick- film design methodologies, the authors designed a test sample on which four different length-over-width ratios of resistors were designed. They found that the length-over-width ratio will substantially affect the gauge factor in some cases, in contrast to prior research. This can be modeled to generate a linear predictive model, The sensors designed on the insulator and the sensors underneath the insulator were also studied in order to simulate the multilayer hybrid technology and study the effects of insulator-resistor-substrate surface interaction. It is demonstrated that design techniques can affect the strain …