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Electromagnetics and Photonics Commons™
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Articles 1 - 17 of 17
Full-Text Articles in Electromagnetics and Photonics
3-D Fabry–Pérot Cavities Sculpted On Fiber Tips Using A Multiphoton Polymerization Process, Jonathan W. Smith, Jeremiah C. Williams, Joseph S. Suelzer, Nicholas G. Usechak, Hengky Chandrahalim
3-D Fabry–Pérot Cavities Sculpted On Fiber Tips Using A Multiphoton Polymerization Process, Jonathan W. Smith, Jeremiah C. Williams, Joseph S. Suelzer, Nicholas G. Usechak, Hengky Chandrahalim
Faculty Publications
This paper presents 3-D Fabry–Pérot (FP) cavities fabricated directly onto cleaved ends of low-loss optical fibers by a two-photon polymerization (2PP) process. This fabrication technique is quick, simple, and inexpensive compared to planar microfabrication processes, which enables rapid prototyping and the ability to adapt to new requirements. These devices also utilize true 3-D design freedom, facilitating the realization of microscale optical elements with challenging geometries. Three different device types were fabricated and evaluated: an unreleased single-cavity device, a released dual-cavity device, and a released hemispherical mirror dual-cavity device. Each iteration improved the quality of the FP cavity's reflection spectrum. The …
Temporally Multiplexed Ladar Polarimeter, Christian Keyser, Richard Kenneth Martin
Temporally Multiplexed Ladar Polarimeter, Christian Keyser, Richard Kenneth Martin
AFIT Patents
In a polarimeter, a polarization modulator changes a polarization phase of an output optical pulse with a modulation function that varies in time over the duration of the optical pulse. A static polarization state analyzer, which includes a one or more static polarization component analyzers and detectors, receives the modulated optical pulse after interaction with a target medium and provides time varying intensities of the polarization components of the received pulse. A signal processing module determines a polarization property of the target medium, such as a Mueller matrix, dependent upon time varied intensities over the duration of the received optical …
Dynamic Micromechanical Fabry-Perot Cavity Sensors Fabricated By Multiphoton Absorption Onto Optical Fiber Tips, Jeremiah C. Williams
Dynamic Micromechanical Fabry-Perot Cavity Sensors Fabricated By Multiphoton Absorption Onto Optical Fiber Tips, Jeremiah C. Williams
Theses and Dissertations
This research leveraged two-photon polymerization microfabrication to integrate dynamic mechanical components with Fabry-Perot resonators onto the ends of low-loss optical fibers to prototype 3 micro-optic devices. The first device featured a multi-positional mirror that enabled thin-film deposition onto cavities of any length with mirrors of significant curvature, for refractive index sensing. The second device combined an FP cavity with a spring body featuring easily scalable stiffness for pressure sensing. The third device presented a high-speed rotating micro-anemometer for measuring a wide range of gas flows. All devices represent a significant reduction in size and weight over commercially available devices.
Nonlinearities And Carrier Dynamics In Refractory Plasmonic Tin Thin Films, Heather George, Jennifer Reed, Manuel R. Ferdinandus, Clayton Devault, Alexei Lagutchev, Augustine Urbas, Theodore B. Norris, Vladimir M. Shalaev, Alexandra Boltasseva, Nathaniel Kinsey
Nonlinearities And Carrier Dynamics In Refractory Plasmonic Tin Thin Films, Heather George, Jennifer Reed, Manuel R. Ferdinandus, Clayton Devault, Alexei Lagutchev, Augustine Urbas, Theodore B. Norris, Vladimir M. Shalaev, Alexandra Boltasseva, Nathaniel Kinsey
Faculty Publications
Titanium nitride is widely used in plasmonic applications, due to its robustness and optical properties which resemble those of gold. Despite this interest, the nonlinear properties have only recently begun to be investigated. In this work, beam deflection and non-degenerate femtosecond pump-probe spectroscopy (800 nm pump and 650 nm probe) were used to measure the real and imaginary transient nonlinear response of 30-nm-thick TiN films on sapphire and fused silica in the metallic region governed by Fermi-smearing nonlinearities. In contrast to other metals, it is found that TiN exhibits non-instantaneous positive refraction and reverse saturable absorption whose relaxation is dominated …
Displacement Damage Effects In Gesn Light Emitting Diodes, Kevin K. Choe
Displacement Damage Effects In Gesn Light Emitting Diodes, Kevin K. Choe
Theses and Dissertations
Potential future use on Earth-orbiting satellites calls for investigation into the suitability of GeSn based photonic devices in high energy proton environments. The electroluminescence (EL) intensity of Ge1-xSnx (x = 0, 0.02, 0.069, and 0.094) light emitting diodes was measured before and after irradiation by 2 MeV protons at relatively high fluence levels. The results showed that GeSn devices with higher Sn content were up to 10 times more resistant against proton displacement damage than the pure Ge (x = 0) devices. As Sn concentration increased, the band gap decreased, and V-P hole trap energy level moved further from the …
Ballistic Evaluation Of Carbon Nanotube Sheet Material In Multifunctional Applications, Casey M. Keilbarth
Ballistic Evaluation Of Carbon Nanotube Sheet Material In Multifunctional Applications, Casey M. Keilbarth
Theses and Dissertations
Significant development of carbon nanotubes has occurred since they were first studied in the 1990's. Attempts to capture the phenomenal molecular properties in practical applications are gaining ground as new methods of producing CNTs have been developed. This thesis sought to determine if the addition of commercially produced CNT sheets to thin carbon fiber panels improved the ballistic properties of the panel. The difference between 0 and 4 CNT sheets was studied. The hypothesis was that inte- grating CNT sheets into the laminate would increase the projectile energy absorbed by the panel and reduce the damage to the panel incurred …
Demonstration Of Versatile Whispering-Gallery Micro-Lasers For Remote Refractive Index Sensing, Lei Wan, Hengky Chandrahalim, Jian Zhou
Demonstration Of Versatile Whispering-Gallery Micro-Lasers For Remote Refractive Index Sensing, Lei Wan, Hengky Chandrahalim, Jian Zhou
Faculty Publications
We developed chip-scale remote refractive index sensors based on Rhodamine 6G (R6G)-doped polymer micro-ring lasers. The chemical, temperature, and mechanical sturdiness of the fused-silica host guaranteed a flexible deployment of dye-doped polymers for refractive index sensing. The introduction of the dye as gain medium demonstrated the feasibility of remote sensing based on the free-space optics measurement setup. Compared to the R6G-doped TZ-001, the lasing behavior of R6G-doped SU-8 polymer micro-ring laser under an aqueous environment had a narrower spectrum linewidth, producing the minimum detectable refractive index change of 4 x 10−4 RIU. The maximum bulk refractive index sensitivity (BRIS) …
Effects Of Edge Inclination Angles On Whispering-Gallery Modes In Printable Wedge Microdisk Lasers, Cong Chen, Lei Wan, Hengky Chandrahalim
Effects Of Edge Inclination Angles On Whispering-Gallery Modes In Printable Wedge Microdisk Lasers, Cong Chen, Lei Wan, Hengky Chandrahalim
Faculty Publications
The ink-jet technique was developed to print the wedge polymer microdisk lasers. The characterization of these lasers was implemented using a free-space optics measurement setup. It was found that disks of larger edge inclination angles have a larger free spectral range (FSR) and a lower resonance wavelength difference between the fundamental transverse electric (TE) and transverse magnetic (TM) whispering-gallery modes (WGMs). This behavior was also confirmed with simulations based on the modified Oxborrow’s model with perfectly matched layers (PMLs), which was adopted to accurately calculate the eigenfrequencies, electric field distributions, and quality parameters of modes in the axisymmetric microdisk resonators. …
Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
Doping photorefractive single crystals of Sn2P2S6 with antimony introduces both electron and hole traps. In as-grown crystals, Sb3+ (5s2) ions replace Sn2+ ions. These Sb3+ ions are either isolated (with no nearby perturbing defects) or they have a charge-compensating Sn2+ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb3+ ions trap electrons and become Sb2+ (5s25p1) ions. In contrast, Sb3+ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily …
Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton
Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO2. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO2. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …
Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton
Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to investigate the triplet (S = 1) ground state of the neutral oxygen vacancy in bulk rutile TiO2 crystals. This shallow donor consists of an oxygen vacancy with two nearest-neighbor, exchange-coupled 3+ ions located along the [001] direction and equidistant from the vacancy. The spins of the two trapped electrons, one at each 3+ ion, align parallel to give the S = 1 state. These neutral oxygen vacancies are formed near 25 K in as-grown oxidized TiO2 crystals by illuminating with sub-band-gap 442 nm laser light. The angular dependence of the EPR …
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Faculty Publications
We find Mn surface segregation for single crystals of Mn doped Li2B4O7, nominally Li1.95Mn0.05B4O7(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li2B4O7 samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li2B4 …
The Electronic Structure And Secondary Pyroelectric Properties Of Lithium Tetraborate, Volodymyr T. Adamiv, Yaroslav V. Burak, David J. Wooten, John W. Mcclory, James C. Petrosky, Ihor Ketsman, Ya B. Losovyj, Peter A. Dowben, Jie Xiao
The Electronic Structure And Secondary Pyroelectric Properties Of Lithium Tetraborate, Volodymyr T. Adamiv, Yaroslav V. Burak, David J. Wooten, John W. Mcclory, James C. Petrosky, Ihor Ketsman, Ya B. Losovyj, Peter A. Dowben, Jie Xiao
Faculty Publications
We review the pyroelectric properties and electronic structure of Li2B4O7(110) and Li2B4O7(100) surfaces. There is evidence for a pyroelectric current along the [110] direction of stoichiometric Li2B4O7 so that the pyroelectric coefficient is nonzero but roughly 103 smaller than along the [001] direction of spontaneous polarization. Abrupt decreases in the pyroelectric coefficient along the [110] direction can be correlated with anomalies in the elastic stiffness contributing to the concept that the pyroelectric coefficient is not simply a vector but has qualities of …
Analysis And Application Of The Bi-Directional Scatter Distribution Function Of Photonic Crystals, Robert B. Lamott
Analysis And Application Of The Bi-Directional Scatter Distribution Function Of Photonic Crystals, Robert B. Lamott
Theses and Dissertations
Photonic crystals (PCs) are periodic structures built from materials with different refractive indices repeated at sub-wavelength intervals, which results in unusual optical characteristics, including narrowband laser protection, and zero reflectance and high absorption anomalies. Most of the research into the optical properties of PCs has concentrated only on the small range of wavelengths and angles where these effects occur. To better understand where all light leaving a PC is scattered, a Complete Angle Scatter Instrument was used to analyze the scatter from three Guided Mode Resonance Filters designed for laser protection. In the plane of incidence, measurements of the scatter …
The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory
The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory
Theses and Dissertations
AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 1013 electrons/cm2 or 1010 neutrons/cm2 due …
Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard
Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard
Theses and Dissertations
Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …
Electrical Properties Of P-Type Gainp2, Roy S. Calfas
Electrical Properties Of P-Type Gainp2, Roy S. Calfas
Theses and Dissertations
The GaInP2 n+—p junction diode has recently become important to the development of high efficiency GaInP2GaAs dual junction solar cells, which have a demonstrated air mass 1.5 conversion efficiencies in excess of 27. In order to study the effects of long term exposure to the space environment, the GaInP2 n+—p junction diodes were irradiated with a 1 MeV electron beam with a fluence of 1016 electrons/cm2. Since little is known about deep level defects traps in GaInP2, a deep level transient spectroscopy DLTS study was made to characterize the …