Electromagnetics and Photonics Commons^™

The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory

Theses and Dissertations

AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 10¹³ electrons/cm² or 10¹⁰ neutrons/cm² due …