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Articles 1 - 7 of 7
Full-Text Articles in Engineering Physics
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Theses and Dissertations
This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …
Rubidium Recycling In A High Intensity Short Duration Pulsed Alkali Laser, Wooddy S. Miller
Rubidium Recycling In A High Intensity Short Duration Pulsed Alkali Laser, Wooddy S. Miller
Theses and Dissertations
Laser induced fluorescence was used to study how pump pulse duration and alkali recycle time effects maximum power output in a Diode Pumped Alkali Laser (DPAL) system. A high intensity short pulsed pump source was used to excited rubidium atoms inside a DPAL-type laser. The maximum output power of the laser showed a strong dependence upon the temporal width of the pump pulse in addition to the input pump intensity. A linear relationship was observed between the maximum output power and the pulse width due to the effective lifetime of the excited state, defined as the time it takes for …
Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay
Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay
Theses and Dissertations
In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …
Single-Sided Noninvasive Inspection Of Multielement Sample Using Fan-Beam Multiplexed Compton Scatter Tomography, Matthew A. Lange
Single-Sided Noninvasive Inspection Of Multielement Sample Using Fan-Beam Multiplexed Compton Scatter Tomography, Matthew A. Lange
Theses and Dissertations
As aircraft age, corrosion forms upon unobservable surfaces, particularly at the junction of the sheet aluminum and the steel rivets used to attach the sheets to the airframe, degrading the aircraft s airworthiness. Previous research developed a noninvasive technique for the evaluation of the material composition of aluminum surfaces, utilizing the information encoded in the energy spectra of Compton-scattered gamma emissions. The spectra are gathered by a six-element, high purity germanium detector array. A, first principles, deterministic computer code is used to reconstruct a two-dimensional map of the electron density of aluminum samples. Previous efforts, to image pure aluminum samples, …
Experimental Investigation Of Nonlinear Dynamics In Single Mode Semiconductor Laser Diodes With Phase Conjugate Feedback, Gordon T. Hengst
Experimental Investigation Of Nonlinear Dynamics In Single Mode Semiconductor Laser Diodes With Phase Conjugate Feedback, Gordon T. Hengst
Theses and Dissertations
The semiconductor laser diode offers a unique system to investigate nonlinear dynamics when optical feedback is applied. Although there is extensive research of laser diodes with optical feedback from normal dielectric mirrors, very little has been done experimentally to analyze the effects of degenerate phase conjugate feedback from a BaTiO3 crystal. This research experimentally investigated the dynamics of a single-mode laser diode with weak phase conjugate feedback using both the self-pumped and double phase conjugate geometries. The experimental results validated a mathematical model which numerically evaluates the Lang-Kobayahsi coupled differential equations. The model simulated the nonlinear behavior of a …
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Theses and Dissertations
Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and …