Condensed Matter Physics Commons^™

Unified Study Of The Classical Hall Effect, Carter J. Reed, Javier E. Hasbun, Wyatt E. Ackerman, L Ajith Desilva

Georgia Journal of Science

Germanium (Ge) samples with different doping types, acceptors (p-type) and donors (n-type), were studied to investigate charge carrier behavior. Carrier concentrations were found to be 1.16×10^21 m^(-3) for the p-type sample and 7.337×10^20 m^(-3) for the n-type sample. These experiments were conducted for the standard Hall effect (Hall voltage versus low magnetic field (B) values) as well as conductivity and Hall voltage versus temperature for different B-fields. The measurements versus temperature at zero-field allow us to obtain band gap ( Eg). While we investigate the conductivities for n-type and p-type doped samples, we also study the conductivity of an undoped …

Investigating The Roles Of Intrinsic Point Defects And Transition Metal Doping In Monolayer And Bulk Tis2, Patrick J. Keeney

UNF Graduate Theses and Dissertations

Within this thesis, the magnetic and electronic properties of various 1T-TiS₂ systems are thoroughly examined using density functional theory (DFT) and scanning tunneling microscopy (STM). Formation energies and electronic implications of intrinsic point defects in bulk TiS₂ and monolayer TiS₂ are analyzed by approximating a computational monolayer of TiS₂ as the surface layer of a bulk sample. This approximation is validated given that intralayer covalent bonding dominates interlayer van der Waals interactions. We conclude that the most energetically favorable intrinsic defects are Ti atoms settling above the outermost S plane and S vacancies. In addition, the …

Design, Fabrication, And Spectroscopy Of Photocatalytic Materials In Visible Spectrum, Yamuna Paudel

Dissertations, Theses, and Capstone Projects

Heterogeneous photocatalysis has attracted research interest in sustainable energy technologies. However, achieving high photocatalytic efficiency from visible light-absorbing semiconductors is challenging due to their weak absorption, transport losses, and low activity. While multilayer approaches have been developed to enhance the surface reactivity and stability independent of electronic factors, a comprehensive framework for optimizing light-matter interactions has not yet been established. Here, we introduce a photonic strategy using semiconductor metasurfaces, which is highly effective in enhancing the photocatalytic activity of GaAs, a high-performance semiconductor with a near-infrared bandgap. Our engineered pillar arrays with heights of ~150 nm exhibit Mie resonances near …

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers

Physics Undergraduate Honors Theses

Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …

Engineering Rare-Earth Based Color Centers In Wide Bandgap Semiconductors For Quantum And Nanoscale Applications, Gabriel I. López-Morales

Dissertations, Theses, and Capstone Projects

For many years, atomic point-defects have been readily used to tune the bulk properties of solid-state crystalline materials, for instance, through the inclusion of elemental impurities (doping) during growth, or post-processing treatments such as ion bombardment or high-energy irradiation. Such atomic point-defects introduce local ‘incompatible’ chemical interactions with the periodic atomic arrangement that makes up the crystal, resulting for example in localized electronic states due to dangling bonds or excess of electrons. When present in sufficient concentrations, the defects interact collectively to alter the overall bulk properties of the host material. In the low concentration limit, however, point-defects can serve …

Electrical And Optical Characterization Of Two-Dimensional Semiconductors Using Ultrafast Spectroscopy, Pan Adhikari

All Dissertations

The emergence of two-dimensional (2D) layered materials provides unprecedented opportunities for studying excitonic physics due to the strong Coulomb interaction between the electron-hole pair. Because of the reduced dimensionality and weak dielectric screening, the exciton is stable at room temperature, unlike bulk semiconductors. The evolution from low to high carrier density for optical gain in 2D semiconductors involves insulating exciton gas, exciton condensation, co-existence of various excitonic complexes, electron-hole plasmas (EHPs), or electron-hole liquids (EHLs), leading to the Mott transition. Strong interaction among the excitons, such as exciton-exciton annihilation (EEA), serves as a hot-carrier generation. A bound exciton dissociates into …

Theoretical Investigations Of The Structural, Dynamical, Electronic, Magnetic, And Thermoelectric Properties Of Corhysi (Y = Cr, Mn) Quaternary Heusler Alloys, Abdullah Hussain Hzzazi

Graduate Theses and Dissertations

Thermoelectric materials have potential properties for utilizing waste heat. The computations are used to estimate the electronic structure of CoRhYSi (Y = Cr, Mn) Quaternary Heusler alloys, as well as their elastic and magnetic characteristics. The full-potential linearized augmented plane wave is used in the calculations. The exchange-correlations are addressed using Perdew–Burke and Ernzerhof's generalized gradient approximation (GGA-PBE). With the exception of CoRhCrSi and CoRhMnSi, which are simple ferromagnets that are approximately half metallic in nature, electronic structure calculations demonstrate that these compounds have a gap in the minority states band and are obviously half-metallic ferromagnets. The magnetic moments of …

Data Processing & Analysis For Atomic Force Microscopy (Afm), Molly Mcdonough, Polievkt Perov, Walter Johnson, Stevan Radojev

Undergraduate Theses and Capstone Projects

Scanning Probe Microscopy (SPM) has become a critical tool for characterization of materials in fields such as physics, material science, chemistry, and biology. Atomic Force Microscopy (AFM) is an increasingly useful technique because of its high resolution in three dimensions, the sample does not need to be conductive, and the technique does not need to take place in vacuum. AFM can image a wide variety of topographies and many different types of materials. AFM can deliver 3D topography information from the angstrom level to the micron scale with high resolution. One of the most important aspects of Atomic Force Microscopy …

Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis

Dissertations, Theses, and Capstone Projects

In this thesis, we discuss the growth procedure and the characterization results obtained for epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI semiconductors. We have investigated the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots and the use of (Zn)CdTe/ZnCdSe QDs for intermediate band solar cell (IBSC). Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to ~1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were also probed. A new growth sequence for type-II (Zn)CdTe/ZnCdSe (QDs) was …

Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse

Legacy Theses & Dissertations (2009 - 2024)

This dissertation presents theoretical and experimental studies in carbon nanotubes (CNTs), graphene, and van der Waals heterostructures. The first half of the dissertation focuses on cutting edge tight-binding-based quantum transport models which are used to study proton irradiation-induced single-event effects in carbon nanotubes [1], total ionizing dose effects in graphene [2], quantum hall effect in graded graphene p-n junctions [3], and ballistic electron focusing in graphene p-n junctions [4]. In each study, tight-binding models are developed, with heavy emphasis on tying to experimental data. Once benchmarked against experiment, properties of each system which are difficult to access in the laboratory, …

Using Fundamental Properties Of Light To Investigate Photonic Effects In Condensed Matter And Biological Tissues, Laura A. Sordillo

Dissertations and Theses

Light possesses characteristics such as polarization, wavelength and coherence. The interaction of light and matter, whether in a semiconductor or in a biological sample, can reveal important information about the internal properties of a system. My thesis focuses on two areas: photocarriers in gallium arsenide and biomedical optics. Varying the excitation wavelength can be used to study both biological tissue and condensed matter. I altered the excitation wavelengths to be in the longer near-infrared (NIR) optical windows, in the shortwave infrared (SWIR) range, a wavelength region previously thought to be unusable for medical imaging. With this method, I acquired high …

Detecting Majorana Fermion Induced Crossed Andreev Reflection, Lei Fang

Dissertations, Theses, and Capstone Projects

This dissertation is devoted to a study of detecting the Majorana fermion induced crossed Andreev reflection.

Majorana fermions are particles that constitute their own antiparticles. In condensed matter physics, Majorana fermions are zero energy modes that reside at edges or around vortices of topological superconductors. The special properties of Majorana fermions result in their potential to conduct topological quantum computation, which has been attracting a lot of current research. One of the most important issues in the field of the Majorana fermion physics now is to detect their existence in realistic systems. Among many classes of detecting methods, a transport …

Synthesis And Fundamental Property Studies Of Energy Material Under High Pressure., Meysam Akhtar

Electronic Theses and Dissertations

Recently, high-pressure science and technology has flourished and rapidly advanced to impact a wide domain of materials and physical sciences. One of the most substantial technological developments is the integration of samples at ultrahigh pressure with a wide range of in-situ probing techniques. Applications of extreme pressure have significantly enriched our understanding of the electronic, phonon, and doping effects on the newly emerged two-dimensional (2D) materials. Under high pressure, materials’ atomic volume radically decreases, and electronic density rises, which will lead to extraordinary chemical reaction kinetic and mechanisms. The promising capability of high pressure combine with the significance of novel …

Titanium Trisulfide Monolayer: Theoretical Prediction Of A New Direct-Gap Semiconductor With High And Anisotropic Carrier Mobility, Jun Dai, Xiao Cheng Zeng

Xiao Cheng Zeng Publications

A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS₃) monolayer, is predicted to possess novel electronic properties. Ab initio calculations show that the perfect TiS₃ monolayer is a direct-gap semiconductor with a bandgap of 1.02 eV, close to that of bulk silicon, and with high carrier mobility. More remarkably, the in-plane electron mobility of the 2D TiS₃ is highly anisotropic, amounting to about 10,000 cm² V⁻¹ s⁻¹ in the b direction, which is higher than that of the MoS₂ monolayer, whereas the hole mobility is about two orders of magnitude lower. …

Control Of Majorana Edge Modes By A G-Factor Engineered Nanowire Spin Transistor, Amrit De, Alexey Kovalev

Department of Physics and Astronomy: Faculty Publications

We propose the manipulation of Majorana edge states via hybridization and spin currents in a nanowire spin transistor. The spin transistor is based on a heterostructure nanowire comprising of semiconductors with large and small g-factors that form the topological and non-topological regions respectively. The hybridization of bound edge states results in spin currents and 4π-periodic torques, as a function of the relative magnetic field angle – an effect which is dual to the fractional Josephson effect. We establish relation between torques and spin-currents in the non-topological region where the magnetic field is almost zero and spin is …

Below Gap Optical Absorption In Gaas Driven By Intense, Single-Cycle Coherent Transition Radiation, J. Goodfellow, Matthias Fuchs, D. Daranciang, S. Ghimire, F. Chen, H. Loos, D. A. Reis, A. S. Fisher, A. M. Lindenberg

Matthias Fuchs Publications

Single-cycle terahertz fields generated by coherent transition radiation from a relativistic electron beam are used to study the high field optical response of single crystal GaAs. Large amplitude changes in the sub-band-gap optical absorption are induced and probed dynamically by measuring the absorption of a broad-band optical beam generated by transition radiation from the same electron bunch, providing an absolutely synchronized pump and probe geometry. This modification of the optical properties is consistent with strong-field-induced electroabsorption. These processes are pertinent to a wide range of nonlinear terahertz-driven lightmatter interactions anticipated at accelerator-based sources.

How Much Can Guided Modes Enhance Absorption In Thin Solar Cells?, Peter N. Saeta, Vivian E. Ferry, Domenico Pacifici, Jeremy N. Munday, Harry A. Atwater

All HMC Faculty Publications and Research

Absorption enhancement in thin metal-backed solar cells caused by dipole scatterers embedded in the absorbing layer is studied using a semi-analytical approach. The method accounts for changes in the radiation rate produced by layers above and below the dipole, and treats incoherently the subsequent scattering of light in guided modes from other dipoles. We find large absorption enhancements for strongly coupled dipoles, exceeding the ergodic limit in some configurations involving lossless dipoles. An antireflection-coated 100-nm layer of a-Si:H on Ag absorbs up to 87% of incident above-gap light. Thin layers of both strong and weak absorbers show similar strongly enhanced …