Condensed Matter Physics Commons^™

Absorption Of Microwaves In La1Àxsrxmno3 Manganese Powders Over A Wide Bandwidth, G. Li, G. G. Hu, H. D. Zhou, Xiaojuan Fan, X. G. Li

Physics Faculty Research

We present the frequency dependence of microwave-absorbing properties of La_1-xSr_xMnO₃ (x=0.4, 0.5, 0.6, and 0.7) powders at room temperature. The absorbing properties change gradually with x in the frequency range of 8–12 GHz. The optimal absorption can be achieved for a x=0.4 sample and its microwave loss peak value is about 25 dB. Further experimental results show that the absorption can be attributed to magnetic and dielectric losses and the microwave loss peak corresponds to the maximum dielectric loss tangent tan δ_e near 10.5 GHz. Furthermore, the absorbing properties of the oxides mixed with …

Atomic And Electronic Structure Of Co/Srtio3/Co Tunnel Junctions, Ivan I. Oleinik, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

First-principles density-functional calculations of the atomic and electronic structure of Co/SrTiO₃ /Co (001) magnetic tunnel junctions (MTJ’s) are performed. Different interface terminations are considered and the most stable structure with the TiO₂ termination is identified based on energetics of adhesion. The calculated electronic structure of the TiO₂-terminated MTJ shows an exchange coupling between the interface Co and Ti atoms mediated by oxygen. This coupling induces a magnetic moment of 0.25 µ_B on the interface Ti atom, which is aligned antiparallel to the magnetic moment of the Co layer. We argue that this might cause an …

Local Impurity-Assisted Conductance In Magnetic Tunnel Junctions, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

Using a simple tight-binding model and the Kubo formula we have calculated the lateral distribution of the tunneling conductance across a magnetic tunnel junction probed by STM. We find that the presence of an isolated impurity within the barrier layer can cause a spike in the conductance distribution, which is in agreement with recent experiments. We show that the local tunneling magnetoresistance (TMR) is very sensitive to the electronic state of the impurity and to the lateral position of the tip. The latter dramatic variation in TMR could be detected by STM.

Vortex-Defect Interactions In High-Temperature Superconductors, Valentina Tobos

Dissertations

The topics covered in this thesis are related to two objectives: one refers to the search for methods of improving die critical current density of high-temperature superconductors, a subject which remains of continuing interest for its importance in technological applications. The other direction is aimed at clarifying the phase diagram of high-Tc materials.

The interaction between the structural defects and the vortex system plays a significant role in the capability of these materials to carry large electrical transport currents. Through proton irradiation induced defects we follow the evolution of the critical current density, and its enhancement with increasing point-like defects …

Transition Temperature For Weakly Interacting Homogeneous Bose Gases, Frederico F. De Souza Cruz, Marcus B. Pinto, Rudnei O. Ramos

Dartmouth Scholarship

We apply the nonperturbative optimized linear δ expansion method to the O(N) scalar field model in three dimensions to determine the transition temperature of a dilute homogeneous Bose gas. Our results show that the shift of the transition temperature ΔTc/Tc of the interacting model, compared with the ideal-gas transition temperature, really behaves as γan1/3 where a is the s-wave scattering length and n is the number density. For N=2 our calculations yield the value γ=3.059.

Phonon Modes In Inas Quantum Dots, Shang-Fen Ren, G Qin, Deyu Lu

Faculty publications – Physics

Phonon modes in spherical InAs quantum dots (QDs) with up to 11 855 atoms (about 8.5 nm in diameter) are calculated by using a valence force field model, and all the vibration frequencies and vibration amplitudes of the QDs are calculated directly from the lattice-dynamic matrix. The projection operators of the irreducible representations of the group theory are employed to reduce the computational intensity, which further allows us to investigate the quantum confinement effect of phonon modes with different symmetries. It is found that the size effects of phonon modes depend on the symmetry of the modes. For zinc-blende structure, …

Affinity For Scalar Fields To Dissipate, Arjun Berera, Rudnei O. Ramos

Dartmouth Scholarship

The zero-temperature effective equation of motion is derived for a scalar field interacting with other fields. For a broad range of cases, involving interaction with as few as one or two fields, dissipative regimes are found for the scalar field system. The zero-temperature limit constitutes a baseline effect that will be prevalent in any general statistical state. Thus, the results found here provide strong evidence that dissipation is the norm not the exception for an interacting scalar field system. For application to inflationary cosmology, this provides convincing evidence that warm inflation could be a natural dynamics once proper treatment of …

Particle Size Determination: An Undergraduate Lab In Mie Scattering, I. Weiner '01, M. Rust '01, Thomas D. Donnelly

All HMC Faculty Publications and Research

A technique for determining the size of microscopic spherical particles using light scattering is presented as an undergraduate physics lab. Scatterer size is determined from angular scattering distribution measurements of laser light scattered from a dilute suspension of latex spheres with diameters of 4.99±0.05 and 6.038±0.045 μm. Previous experiments of this type used approximate theoretical corrections and required the construction of specialized sample cells to minimize complicating effects. As a significant improvement to these, we generate angular scattering distributions from Mie theory and, using an accurate numerical procedure, correct these distributions for Snell’s law and foreshortening effects. Scatterer size …

The Effect Of Aluminium Oxide And Cerium Oxide As Dispersoids In Chitosan-Lithium Acetate Complexes, Hoi Mien Leow

Student Works (2000-2009)

In this study, chitosan with 85% deacetylation was used with Ni(OAc)₂·2H₂O as doping salt and Al₂O₃, or CeO₂ as dispersoid. They were mixed in certain weight percentages and dissolved in 100ml of 0.5% acetic acid solution. These solutions were poured into petri dishes and left at room temperature for film formation. Infrared Spectroscopy has shown that there is interaction between chitosan and LiOAc with and without dispersoid. The peaks are shifted. broadened. split and differs in intensity. The electrical conductivity of all samples was calculated using the bulk resistance value obtained from the complex admittance plot. The highest electrical conductivity …

Sulphide Based Materials As Potential Anodes In Lithium Ion Cells, Azlin Sanusi

Student Works (2000-2009)

Sulphides based compounds PbS and SnS have been studied as possible anode material in lithium ion cell. PbS was prepared by the chemical bath deposition technique and SnS by the double decomposition method. Both samples were characterized by the powder X-ray diffraction technique and energy dispersive analysis of X-rays (EDAX). The room temperature electrical conductivity of PbS is 2.6 x 10⁻⁴ S cm⁻¹ and SnS is 5.3 x 10⁻⁷ S cm⁻¹ while at 90°C the electrical conductivity of PbS is 3.3 x 10⁻⁴ S cm⁻¹ and SnS is 2.90 x 10⁻⁶ S cm⁻¹ Cyclic voltammetry determined the potential anode ability …

Synthesis And Characterization Of Lithiated Mixed Metal Oxides For Lithium Ion Rechargeable Batteries, Seng Gee Tan

Student Works (2000-2009)

Lilhiated mixed metal oxides for lithium ion rechargeable batteries were prepared by the sol gel technique. Samples consisting of lithium acetate, nickel nitrate, cobalt nitrate, manganese acetate and aluminium fluoride were characterised using X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Fourier Transform Infrared Spectroscopy (FTIRS). Energy Dispersive Analysis of X-rays (EDAX) w1d Cyclic Voltammetry (CV). Thermal characterization shows that the acetates, nitrates and fluorides of precursors material deform at temperature between 50° to 100°C and the products begin to form at a temperature between 264°C to 271°C. FTIR studies show that the materials must be heated for a longer time …

Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim

Student Works (2000-2009)

Hydrogenated amorphous silicon (a.Si:H) was prepared using the d.c plasma grow discharge system. Two sets of samples were prepared and studied. The first set of samples referred to as the high argon dilution films were prepared from the discharge of pure silane at flow-rate of 5sccm and silane at the same flow-rate diluted in argon at flow-rates of 5, 10 and 15sccm. Similarly, the second set of sample referred to as the low argon dilution films were prepared from the discharge of pure silane at flow-rate of20sccm and silane at the same flow-rate diluted in argon at the flow-rates mentioned …

Perspectives Of Giant Magnetoresistance, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

Giant magnetoresistance (GMR) is one of the most fascinating discoveries in thin-film magnetism, which combines both tremendous technological potential and deep fundamental physics. Within a decade of GMR being discovered in 1988 commercial devices based on this phenomenon, such as hard-disk read-heads, magnetic field sensors and magnetic memory chips, had become available in the market. These achievements would not have been possible without a detailed understanding of the physics of GMR, which requires a quantum-mechanical insight into the electronic spin-dependent transport in magnetic structures.

Time-Resolved Structural Study Of Low-Index Surfaces Of Germanium Near Its Bulk Melting Temperature, Xinglin Zeng, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The structure of the low-index surfaces of germanium near its bulk melting temperature is investigated using 100-ps time-resolved reflection high-energy electron diffraction. The surface is heated by 100-ps laser pulses while a synchronized electron beam probes the structure. Ge(111)was observed to remain in its incomplete melting structure up to at least T_m + 134 ± 40 K when heated by a 100-ps laser pulse. Both the Ge(100) and Ge(110) surfaces are observed to melt near the bulk melting temperature when heated with 100-ps laser pulses. Because of the low-diffraction intensity-to-background ratio at high temperatures and because of the temperature …