Condensed Matter Physics Commons^™

A Giant Tunneling Electroresistance Effect Driven By Electrically Controlled Spin Valve At A Complex Oxide Interface, John D. Burton, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La_1-xSr_xMnO₃ electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La_1-xSr_xMnO₃ near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben

Peter Dowben Publications

The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f¹⁴ occupancy.

Robust Isothermal Electric Control Of Exchange Bias At Room Temperature, Xi He, Yi Wang, Christian Binek, Peter A. Dowben

Christian Binek Publications

Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with highspeed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr2O3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr2O3 single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive …

Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla

Shireen Adenwalla Papers

Neutron detection in thick boron carbide(BC)/n-type Si heterojunction diodes shows a threefold increase in efficiency with applied bias and longer time constants. The improved efficiencies resulting from long time constants have been conclusively linked to the much longer charge collection times in the BC layer. Neutron detection signals from both the p-type BC layer and the n-type Si side of the heterojunction diode are observed, with comparable efficiencies. Collectively, these provide strong evidence that the semiconducting BC layer plays an active role in neutron detection, both in neutron capture and in charge generation and collection.

Optical Properties Of Quasi-Tetragonal Bifeo3 Thin Films, P. Chen, N. J. Podraza, X. S. Xu, A. Melville, E. Vlahos, V. Gopalan, R. Ramesh, D. G. Schlom, J. L. Musfeldt

Xiaoshan Xu Papers

Optical transmission spectroscopy and spectroscopic ellipsometry were used to extract the optical properties of an epitaxially grown quasi-tetragonal BiFeO₃ thin film in the near infrared to near ultraviolet range. The absorption spectrum is overall blue shifted compared with that of rhombohedral BiFeO₃, with an absorption onset near 2.25 eV, a direct 3.1 eV band gap, and charge transfer excitations that are ~0.4 eV higher than those of the rhombohedral counterpart. We interpret these results in terms of structural strain and local symmetry breaking.

Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook

Materials Research Science and Engineering Center: Faculty Publications

Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO₃ -La_0:7 Sr_0:3MnO₃ interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO₃ and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.

Adsorption-Controlled Growth Of Bimno3 Films By Molecular-Beam Epitaxy, J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, D. G. Schlom

Xiaoshan Xu Papers

We have developed the means to grow BiMnO₃ thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO₃ may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with w rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO₃ has a direct band gap of 1.1±0.1 …

Interlayer Exchange Coupling Across A Ferroelectric Barrier, M. Ye. Zhuravlev, A. V. Vedyayev, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

A new magnetoelectric effect is predicted originating from the interlayer exchange coupling between two ferromagnetic layers separated by an ultrathin ferroelectric barrier. It is demonstrated that ferroelectric polarization switching driven by an external electric field leads to a sizable change in the interlayer exchange coupling. The effect occurs in asymmetric ferromagnet/ferroelectric/ferromagnet junctions due to a change in the electrostatic potential profile across the junction affecting the interlayer coupling. The predicted phenomenon indicates the possibility of switching the magnetic configuration by reversing the polarization of the ferroelectric barrier layer.

Dynamical Theory Calculations Of Spin-Echo Resolved Grazing-Incidence Scattering From A Diffraction Grating, Rana Ashkar, P. Stonaha, A. L. Washington, V. R. Shah, M. R. Fitzsimmons, B. Maranville, C. F. Majkrzak, W. T. Lee, W. L. Schaich, Roger Pynn

Nebraska Center for Materials and Nanoscience: Faculty Publications

Neutrons scattered or reflected from a diffraction grating are subject to a periodic potential analogous to the potential experienced by electrons within a crystal. Hence, the wavefunction of the neutrons can be expanded in terms of Bloch waves and a dynamical theory can be applied to interpret the scattering phenomenon. In this paper, a dynamical theory is used to calculate the results of neutron spin-echo resolved grazing-incidence scattering (SERGIS) from a silicon diffraction grating with a rectangular profile. The calculations are compared with SERGIS measurements made on the same grating at two neutron sources: a pulsed source and a continuous …

Lattice Dynamical Probe Of Charge Order And Antipolar Bilayer Stacking In Lufe2o4, X. S. Xu, J. De Groot, Q.-C. Sun, B. C. Sales, D. Mandrus, M. Angst, A. P. Litvinchuk, J. L. Musfeldt

Xiaoshan Xu Papers

We investigated the infrared response of LuFe₂O₄ through the series of charge, magnetic, and structural transitions. All vibrational modes couple strongly to the charge order, whereas the LuO zone-folding modes are also sensitive to magnetic order and structural distortion. The dramatic splitting of the LuO₂ layer mode is attributed to charge-rich/poor proximity effects and its temperature dependence reveals the antipolar nature of the W layer pattern.

Tunable Band Gap In Bi(Fe1−Xmnx)O3 Films, X. S. Xu, J. F. Ihlefeld, J. H. Lee, O. K. Ezekoye, E. Vlahos, R. Ramesh, V. Gopalan, X. Q. Pan, D. G. Schlom, J. L. Musfeldt

Xiaoshan Xu Papers

In order to investigate band gap tunability in polar oxides, we measured the optical properties of a series of Bi(Fe_1−xMn_x)O₃ thin films. The absorption response of the mixed metal solid solutions is approximately a linear combination of the characteristics of the two end members, a result that demonstrates straightforward band gap tunability in this system.

Magnetodielectric Coupling Of Infrared Phonons In Single-Crystal Cu2oseo3, K. H. Miller, X. S. Xu, H. Berger, E. S. Knowles, D. J. Arenas, M. W. Meisel, D. B. Tanner

Xiaoshan Xu Papers

Reflection and transmission as a function of temperature (5–300 K) have been measured on a single crystal of the magnetoelectric ferrimagnetic compound Cu₂OSeO₃ utilizing light spanning the far infrared to the visible portions of the electromagnetic spectrum. The complex dielectric function and optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. The fits of the infrared phonons show a magnetodielectric effect near the transition temperature (T_c~60 K). Assignments to strong far-infrared phonon modes have been made, especially those exhibiting anomalous behavior around the transition temperature.

Electrically Driven Magnetism On A Pd Thin Film, Y. Sun, John D. Burton, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Using first-principles density-functional calculations, we demonstrate that ferromagnetism can be induced and modulated on an otherwise paramagnetic Pd metal thin-film surface through application of an external electric field. As free charges are either accumulated or depleted at the Pd surface to screen the applied electric field, there is a corresponding change in the surface density of states. This change can be made sufficient for the Fermi-level density of states to satisfy the Stoner criterion, driving a transition locally at the surface from a paramagnetic state to an itinerant ferromagnetic state above a critical applied electric field, E_c. Furthermore, …

Effect Of Spin-Dependent Screening On Tunneling Electroresistance And Tunneling Magnetoresistance In Multiferroic Tunnel Junctions, M. Ye. Zhuravlev, S. Maekawa, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Using a ferroelectric barrier as a functional material in a (magnetic) tunnel junction has recently attracted significant interest due to new functionalities not available in conventional tunnel junctions. Switching a ferroelectric polarization of the barrier alters conductance resulting in a tunneling electroresistance (TER) effect. Using a ferroelectric barrier in a magnetic tunnel junction makes it mutiferroic where TER coexists with tunneling magnetoresistance (TMR). Here we develop a simple model for a multiferroic tunnel junction (MFTJ) which consists of two ferromagnetic electrodes separated by a ferroelectric barrier layer. The model explicitly includes the spin-dependent screening potential and thus extends previously developed …

Ferroelectric Dead Layer Driven By A Polar Interface, Y. Wang, Manish K. Niranjan, K. Janicka, Julian P. Velev, Mikhail Ye Zhuravlev, Sitaram S. Jaswal, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO₂ -terminated BaTiO₃ film with LaO monolayers at the two interfaces that serve as doping layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron charge leaking into the BaTiO₃ layer. The amount of the leaking charge is controlled by the boundary conditions which are different for three heterostructures considered, namely, vacuum/LaO/BaTiO₃ /LaO, LaO/BaTiO₃ , and SrRuO₃ /LaO/BaTiO_{3 …}

Evolution Of The Band Alignment At Polar Oxide Interfaces, John D. Burton, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

First-principles calculations demonstrate the evolution of the band alignment at La_0.7A_0.3MnO₃ / La_1−xA_xO / TiO₂ / SrTiO₃ (001) heterointerfaces, where A=Ca, Sr, or Ba, as the interfacial A-site composition, La_1−xA_x, is varied from x=0.5 to x=1.0. This variation leads to a linear change in the SrTiO₃ valence-band offset with respect to the Fermi level of the La_0.7A_0.3MnO₃ metal electrode and hence to a linear change in the Schottky barrier height at this interface. The effect arises due to electrostatic …

Robust Isothermal Electric Control Of Exchange Bias At Room Temperature, Xi He, Ning Wu, Anthony N. Caruso, Elio Vescovo, Kirill D. Belashchenko, Peter A. Dowben, Christian Binek

Kirill Belashchenko Publications

Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with highspeed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr₂O₃ has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr₂O₃ single crystal, we achieve reversible, room-temperature isothermal switching …

Modeling Of Metal-Ferroelectric-Insulator-Semiconductor Structures Based On Langmuir–Blodgett Copolymer Films, Timothy J. Reece, Stephen Ducharme

Stephen Ducharme Publications

Among the ferroelectric thin films used in field-effect transistor devices; the ferroelectric copolymer of polyvinylidene fluoride PVDF –CH2–CF2–, with trifluoroethylene TrFE –CHF–CF2–, has distinct advantages, including low dielectric constant, low processing temperature, low cost, and compatibility with organic semiconductors. The operation of a metal-ferroelectric insulatorsemiconductor structure with PVDF-TrFE as the ferroelectric layer was analyzed and optimized by numerical solution of the Miller and McWhorter model. A model device consisting of 20 nm PVDF/TrFE on a 10-nm-thick high-k dielectric buffer exhibits a memory window of 5 V with an operating voltage of 15 V. The operating voltage can be reduced to …

Finite Temperature Effects In Magnetic Materials: Model And Ab Initio Studies, Aleksander L. Wysocki

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

The understanding of finite temperature behavior of magnetic materials is of vital importance for spintronic applications. In this dissertation different theoretical techniques for studying magnetic thermodynamics of various materials are discussed. Cr₂O₃ is an antiferromagnetic insulator that was proposed to be a key component of new spintronic devices. The magnetic properties of Cr₂O₃ were studied using the LDA+U method. Magnetism was found to be very well described by the Heisenberg model. Subsequently, magnetic thermodynamics was explored using quantum pair cluster approximation. Overall, very good agreement with experiment was found for the ground state and …

Exchange Bias Training Effect In Magnetically Coupled Bilayers, Srinivas Polisetty

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

Interfaces in magnetically coupled bilayer heterostructures play a vital role in novel spintronics devices. Particularly, control of the interface spin structure enables the development of progressively down-scalable magnetic read-heads which are of major importance for non volatile magnetic recording media. Exchange bias and its accompanying training effect are fundamental magnetic coupling phenomena taking place at the interfaces of antiferromagnetic/ferromagnetic and hard/soft ferromagnetic bilayers. Here, in my thesis I present the experimental results of exchange bias training in the prototypical antiferromagnetic/ferromagnetic exchange bias system CoO/Co and the corresponding coupling and aging phenomena in the all ferromagnetic hard/soft bilayer CoPtCrB/CoCr. The latter …

Nanoscale Domain Patterns In Ultrathin Polymer Ferroelectric Films, Pankaj Sharma, Timothy J. Reece, Daniel W. Wu, Vladimir M. Fridkin, Stephen Ducharme, Alexei Gruverman

Stephen Ducharme Publications

High-resolution studies of domain configurations in Langmuir–Blodgett films of ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), have been carried out by means of piezoresponse force microscopy (PFM). Changes in film thickness and morphology cause significant variations in polarization patterns. In continuous films and nanomesas with relatively low thickness/grain aspect ratio (<1/10), the relationship between the average domain size and thickness follows the Kittel law. Nanomesas with high aspect ratio (>1/5) exhibit significant deviations from this law, suggesting additional surface-energy-related mechanisms affecting the domain patterns. Polarization reversal within a single crystallite has been demonstrated and local switching parameters (coercive voltage and remnant piezoresponse) have been measured by monitoring the local hysteresis loops. Reliable control of polarization at the sub-grain level demonstrates …

Dielectric Nanocomposites: An Inside-Out Approach To Storing Electrostatic Energy, Stephen Ducharme

Stephen Ducharme Publications

The ability to achieve high-energy densities is the central challenge in energy storage and recovery. A promising strategy for increasing energy storage is to use highperformance dielectric materials, such as highly polarizable nanoparticles or polymers, or nanocomposites of the two. In this issue, Kim et al. use a molecular coating and clever chemistry to combine oxide nanoparticles with a polymer matrix, thereby producing an improved nanocomposite dielectric. Some advantages and challenges of using nanocomposites as improved dielectric materials are presented in this Perspective.

Magnetoelectric Effect At The Srruo3/Batio3 (001) Interface: An Ab Initio Study, Manish K. Niranjan, John D. Burton, Julian P. Velev, Sitaram S. Jaswal, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Ferromagnet/ferroelectric interface materials have emerged as structures with strong magnetoelectric coupling that may exist due to unconventional physical mechanisms. Here we present a first-principles study of the magnetoelectric effect at the ferromagnet/ferroelectric SrRuO3 /BaTiO3 (001) interface. We find that the exchange splitting of the spin-polarized band structure, and therefore the magnetization, at the interface can be altered substantially by reversal of the ferroelectric polarization in the BaTiO3. These magnetoelectric effects originate from the screening of polarization charges at the SrRuO3 /BaTiO3 interface and are consistent with the Stoner model for itinerant magnetism.

Tunneling Electroresistance In Ferroelectric Tunnel Junctions With A Composite Barrier, M. Ye. Zhuravlev, Yong Wang, S. Maekawa, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a composite barrier that combines a functional ferroelectric film and a thin layer of a nonpolar dielectric can exhibit a significantly enhanced TER. Due to the change in the electrostatic potential with polarization reversal, the nonpolar dielectric barrier acts as a switch that changes its barrier height from a low to high value. The predicted values of TER are giant and indicate that the resistance of the …

Polarization Switching Kinetics Of Ferroelectric Nanomesas Of Vinylidene Fluoride-Trifluoroethylene Copolymer, R. V. Gaynutdinov, O. A. Lysova, S. G. Yudin, A. L. Tolstikhina, A. L. Kholkin, V. M. Fridkin, Stephen Ducharme

Stephen Ducharme Publications

The polarization switching kinetics of ferroelectric polymer nanomesas was investigated using piezoresponse force microscopy. The nanomesas were made by self-organization from Langmuir–Blodgett films of a 70% vinylidene fluoride and 30% trifluoroethylene copolymer. The polarization switching time exhibits an exponential dependence on reciprocal voltage that is consistent with nucleation-type switching dynamics.

Exchange Coupling At Cobalt/Nickel Oxide Interfaces, Andrew G. Baruth

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

Spin arrangement at interfaces in layered magnetic materials is of vital importance to the emerging field of spintronics. Knowledge of how and why the interfacial spins behave in a certain way will aid in the development of future magnetic-based memories.

Much exploration has taken place in the interlayer exchange coupling (IEC) of ferromagnetic heterostructures with in-plane anisotropy. Only recently has it become apparent that to achieve the goals of increased areal density in magnetic memory a push for exploring magnetic materials with perpendicular magnetic anisotropy (PMA) must occur. An interesting and promising candidate for such a magnetic system is [Co/Pt]/NiO/[Co/Pt], …

Quantum Nature Of Two-Dimensional Electron Gas Confinement At Laalo3=Srtio3 Interfaces, Karolina Janicka, Julian P. Velev, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

We perform density functional calculations to understand the mechanism controlling the confinement width of the two-dimensional electron gas (2DEG) at LaAlO₃/SrTiO₃ interfaces. We find that the 2DEG confinement can be explained by the formation of metal induced gap states (MIGS) in the band gap of SrTiO₃. These states are formed as the result of quantum-mechanical tunneling of the charge created at the interface due to electronic reconstruction. The attenuation length of the MIGS into the insulator is controlled by the lowest-decay-rate evanescent states of SrTiO₃, as determined by its complex band structure. Our …

Optical Properties And Magnetochromism In Multiferroic Bifeo3, X. S. Xu, T. V. Brinzari, S. Lee, Y. H. Chu, L. W. Martin, A. Kumar, S. Mcgill, R. C. Rai, R. Ramesh, V. Gopalan, S. W. Cheong, J. L. Musfeldt

Xiaoshan Xu Papers

In order to investigate spin-charge coupling in multiferroic oxides, we measured the optical properties of BiFeO₃. Although the direct 300 K charge gap is observed at 2.67 eV, absorption onset actually occurs at much lower energy with Fe³⁺ excitations at 1.41 and 1.90 eV. Temperature and magnetic-field-induced spectral changes reveal complex interactions between on-site crystal-field and magnetic excitations in the form of magnon sidebands. We employ the sensitivity of these magnon sidebands to map out the magnetic-fieldtemperature phase diagram which demonstrates optical evidence for spin spiral quenching above 20 T and suggests a spin domain reorientation near …

Magnon Sidebands And Spin-Charge Coupling In Bismuth Ferrite Probed By Nonlinear Optical Spectroscopy, M. O. Ramirez, A. Kumar, S. A. Denev, N. J. Podraza, X. S. Xu, R. C. Rai, Y. H. Chu, J. Seidel, L. W. Martin, S. -Y. Yang, E. Saiz, J. F. Ihlefeld, S. Lee, J. Klug, S. W. Cheong, M. J. Bedzyk, O. Auciello, D. G. Schlom, R. Ramesh, J. Orenstein, J. L. Musfeldt, V. Gopalan

Xiaoshan Xu Papers

The interplay between spin waves (magnons) and electronic structure in materials leads to the creation of additional bands associated with electronic energy levels which are called magnon sidebands. The large difference in the energy scales between magnons (meV) and electronic levels (eV) makes this direct interaction weak and hence makes magnon sidebands difficult to probe. Linear light absorption and scattering techniques at low temperatures are traditionally used to probe these sidebands. Here we show that optical secondharmonic generation, as the lowest-order nonlinear process, can successfully probe the magnon sidebands at room temperature and up to 723 K in bismuth ferrite, …

First-Principles Studies Of A Two-Dimensional Electron Gas At The Interface In Ferroelectric Oxide Heterostructures, Yong Wang, Manish K. Niranjan, Sitaram S. Jaswal, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

The discovery of a two-dimensional electron gas (2DEG) at the interface between two insulating oxides has recently stimulated intense research activity in this field. The 2DEG has unique properties that are promising for applications in all-oxide electronic devices.