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Articles 31 - 60 of 479
Full-Text Articles in Condensed Matter Physics
A Modulated Structure Derived From The Xa-Type Mn2Rusn Heusler Compound, Xingzhong Li, Wen-Yong Zhang, Ralph Skomski, David J. Sellmyer
A Modulated Structure Derived From The Xa-Type Mn2Rusn Heusler Compound, Xingzhong Li, Wen-Yong Zhang, Ralph Skomski, David J. Sellmyer
Nebraska Center for Materials and Nanoscience: Faculty Publications
A modulated structure derived from the inverse Heusler phase (the XA-type and the disordered variant L21B-type) has been observed in rapidly quenched Mn2RuSn ribbons. The powder X-ray diffraction pattern of the quenched ribbons can be indexed as an L21B-type structure. Electron diffraction patterns of the new structure mostly resemble those of the XA-type (and the disordered variant L21B-type) structure and additional reflections with denser spacing indicate a long periodicity. Orthogonal domains of the modulated structure were revealed by a selected-area electron diffraction pattern and the corresponding dark-field transmission electron microscopy images. The structure was …
Localization Effects And Anomalous Hall Conductivity In A Disordered 3d Ferromagnet, Paul M. Shand, Y. Moua, G. Baker, Shah R. Valloppilly, Pavel V. Lukashev, Parashu Kharel
Localization Effects And Anomalous Hall Conductivity In A Disordered 3d Ferromagnet, Paul M. Shand, Y. Moua, G. Baker, Shah R. Valloppilly, Pavel V. Lukashev, Parashu Kharel
Nebraska Center for Materials and Nanoscience: Faculty Publications
We have prepared the Heusler alloy CoFeV0.5Mn0.5Si in bulk form via arc melting. CoFeV0.5Mn0.5Si is ferromagnetic with a Curie temperature of 657 K. The longitudinal resistivity exhibits a minimum at 150 K, which is attributable to competition between quantum interference corrections at low temperatures and inelastic scattering at higher temperatures. The magnetoresistance (MR) is positive and nearly linear at low temperatures and becomes negative at temperatures close to room temperature. The positive MR in the quantum correction regime is evidence of the presence of the enhanced electron interaction as a contributor to …
What Happens When Transition Metal Trichalcogenides Are Interfaced With Gold?, Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter Dowben
What Happens When Transition Metal Trichalcogenides Are Interfaced With Gold?, Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter Dowben
Peter Dowben Publications
Transition metal trichalcogenides (TMTs) are two-dimensional (2D) systems with quasi-one-dimensional (quasi-1D) chains. These 2D materials are less susceptible to undesirable edge defects, which enhances their promise for low-dimensional optical and electronic device applications. However, so far, the performance of 2D devices based on TMTs has been hampered by contact-related issues. Therefore, in this review, a diligent effort has been made to both elucidate and summarize the interfacial interactions between gold and various TMTs, namely, In4Se3, TiS3, ZrS3, HfS3, and HfSe3. X-ray photoemission spectroscopy data, supported by the results …
Direct Observation Of Ferroelectric Switching In Two-Dimensional Mos2, A. Lipatov, P. Chaudhary, Z. Guan, H. Lu, G. Li, O. Crégut, K. D. Dorkenoo, R. Proksch, Ding-Fu Shao, Evgeny Y. Tsymbal, J. Íñiguez, A. Sinitskii, Alexei Gruverman
Direct Observation Of Ferroelectric Switching In Two-Dimensional Mos2, A. Lipatov, P. Chaudhary, Z. Guan, H. Lu, G. Li, O. Crégut, K. D. Dorkenoo, R. Proksch, Ding-Fu Shao, Evgeny Y. Tsymbal, J. Íñiguez, A. Sinitskii, Alexei Gruverman
Evgeny Tsymbal Publications
No abstract provided.
Electronic Reconstruction At The Polar (111)-Oriented Oxide Interface, S. Ryu, H. Zhou, Tula R. Paudel, Neil Campbell, J. Podkaminer, C. W. Bark, T. Hernandez, D. D. Fong, Y. Zhang, L. Xie, X. Q. Pan, Evgeny Y. Tsymbal, M. S. Rzchowski, Chang-Beom Eom
Electronic Reconstruction At The Polar (111)-Oriented Oxide Interface, S. Ryu, H. Zhou, Tula R. Paudel, Neil Campbell, J. Podkaminer, C. W. Bark, T. Hernandez, D. D. Fong, Y. Zhang, L. Xie, X. Q. Pan, Evgeny Y. Tsymbal, M. S. Rzchowski, Chang-Beom Eom
Evgeny Tsymbal Publications
Atomically flat (111) interfaces between insulating perovskite oxides provide a landscape for new electronic phenomena. For example, the graphene-like coordination between interfacial metallic ion layer pairs can lead to topologically protected states [Xiao et al., Nat. Commun. 2, 596 (2011) and A. Rüegg and G. A. Fiete, Phys. Rev. B 84, 201103 (2011)]. The metallic ion/metal oxide bilayers that comprise the unit cell of the perovskite (111) heterostructures require the interface to be polar, generating an intrinsic polar discontinuity [Chakhalian et al., Nat. Mater. 11, 92 (2012)]. Here, we investigate epitaxial heterostructures of (111)-oriented LaAlO3/SrTiO3 (LAO/STO). We …
Spin Hall Effect Of Vorticity, Edward Schwartz, Hamed Vakili, Moaz Ali, Alexey Kovalev
Spin Hall Effect Of Vorticity, Edward Schwartz, Hamed Vakili, Moaz Ali, Alexey Kovalev
Department of Physics and Astronomy: Faculty Publications
Using mapping between topological defects in an easy-plane magnet and electrical charges, we study interplay between vorticity and spin currents. We demonstrate that the flow of vorticity is accompanied by the transverse spin current generation; an effect which can be termed as the spin Hall effect of vorticity. We study this effect across the BKT transition and establish the role of dissipation and spin nonconservation in the crossover from spin superfluidity to diffusive spin transport. Our results pave the way for low power computing devices relying on vorticity and spin flows that can propagate over long distances.
Superfluid Spin Transistor, Edward Schwartz, Bo Li, Alexey Kovalev
Superfluid Spin Transistor, Edward Schwartz, Bo Li, Alexey Kovalev
Alexey Kovalev Papers
We propose to use the Hall response of topological defects, such as merons and antimerons, to spin currents in two-dimensional magnetic insulator with in-plane anisotropy for identification of the Berezinskii-Kosterlitz-Thouless (BKT) transition in a transistorlike geometry. Our numerical results relying on a combination of Monte Carlo and spin dynamics simulations show transition from spin superfluidity to conventional spin transport, accompanied by the universal jump of the spin stiffness and exponential growth of the transverse vorticity current. We propose a superfluid spin transistor in which the spin and vorticity currents are modulated by changes in density of free topological defects, e.g., …
Infrared Dielectric Functions And Brillouin Zone Center Phonons Of Α-Ga2O3 Compared To Α-Al2O3, Megan Stokey, Rafal Korlacki, Matthew J. Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert
Infrared Dielectric Functions And Brillouin Zone Center Phonons Of Α-Ga2O3 Compared To Α-Al2O3, Megan Stokey, Rafal Korlacki, Matthew J. Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the anisotropic dielectric functions of rhombohedral α-Ga2O3 by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high-frequency and static dielectric constants. We perform density functional theory computations and determine the phonon dispersion for all branches in the Brillouin zone, and we derive all phonon mode parameters at the Brillouin zone center including Raman-active, infrared-active, and silent modes. Excellent agreement is obtained between our experimental and computation results as well as among all previously reported partial information from experiment …
Tunneling Magnetoresistance In Noncollinear Antiferromagnetic Tunnel Junctions, J. Dong, X. Li, G. Gurung, M. Zhu, P. Zhang, F. Zheng, Evgeny Y. Tsymbal, J. Zhang
Tunneling Magnetoresistance In Noncollinear Antiferromagnetic Tunnel Junctions, J. Dong, X. Li, G. Gurung, M. Zhu, P. Zhang, F. Zheng, Evgeny Y. Tsymbal, J. Zhang
Evgeny Tsymbal Publications
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that noncollinear AFM metals, such as Mn3Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with …
Spin-Dependent Electronic Transport In Noncollinear Antiferromagnetic Antiperovskites, Gautam Gurung
Spin-Dependent Electronic Transport In Noncollinear Antiferromagnetic Antiperovskites, Gautam Gurung
Department of Physics and Astronomy: Dissertations, Theses, and Student Research
Spin-dependent properties are the heart of spintronic devices. Spintronics exploits electron’s spin, in addition to charge, to process and store the information. Recently, antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM order parameter (the Néel vector) is exploited to control spin-dependent transport properties. Due to being robust against magnetic perturbations, producing no stray fields, and exhibiting ultrafast dynamics, antiferromagnets can serve as promising functional materials for spintronic applications.
Among antiferromagnets, high Néel temperature noncollinear antiperovskites ANMn3 (A = Ga, Ni, Sn, and Pt) are interesting due to their magnetic group symmetry supporting non-trivial spin-dependent …
Voltage Controlled Néel Vector Rotation In Zero Magnetic Field, Ather Mahmood, Will Echtenkamp, Mike Street, Jun Lei Wang, Shi Cao, Takashi Komesu, Peter Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Voltage Controlled Néel Vector Rotation In Zero Magnetic Field, Ather Mahmood, Will Echtenkamp, Mike Street, Jun Lei Wang, Shi Cao, Takashi Komesu, Peter Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Peter Dowben Publications
Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse …
Ferromagnetic Resonances In Single-Crystal Yttrium Iron Garnet Nanofilms Fabricated By Metal-Organic Decomposition, Szu Fan Wang, Kayetan Chorazewicz, Suvechhya Lamichhane, Ronald A. Parrott, Stefano Cabrini, Peter Fischer, Noah Kent, John H. Turner, Takayuki Ishibashi, Zachary Parker Frohock, Jacob J. Wisser, Peng Li, Ruthi Zielinski, Bryce Herrington, Yuri Suzuki, Mingzhong Wu, Keiko Munechika, Carlos Pina-Hernandez, Robert Streubel, Allen A. Sweet
Ferromagnetic Resonances In Single-Crystal Yttrium Iron Garnet Nanofilms Fabricated By Metal-Organic Decomposition, Szu Fan Wang, Kayetan Chorazewicz, Suvechhya Lamichhane, Ronald A. Parrott, Stefano Cabrini, Peter Fischer, Noah Kent, John H. Turner, Takayuki Ishibashi, Zachary Parker Frohock, Jacob J. Wisser, Peng Li, Ruthi Zielinski, Bryce Herrington, Yuri Suzuki, Mingzhong Wu, Keiko Munechika, Carlos Pina-Hernandez, Robert Streubel, Allen A. Sweet
Robert Streubel Papers
Tunable microwave and millimeter wave oscillators and bandpass filters with ultra-low phase noise play a critical role in electronic devices, including wireless communication, microelectronics, and quantum computing. Magnetic materials, such as yttrium iron garnet (YIG), possess ultra-low phase noise and a ferromagnetic resonance tunable up to tens of gigahertz. Here, we report structural and magnetic properties of single-crystal 60 and 130 nm-thick YIG films prepared by metal-organic decomposition epitaxy. These films, consisting of multiple homoepitaxially grown monolayers, are atomically flat and possess magnetic properties similar to those grown with liquid-phase epitaxy, pulsed laser deposition, and sputtering. Our approach does not …
Magnetic Field Perturbations To A Soft X-Ray-Activated Fe (Ii) Molecular Spin State Transition, Guanhua Hao, Alpha T. N’Diaye, Thilini K. Ekanayaka, Ashley S. Dale, Xuanyuan Jiang, Esha Mishra, Corbyn Mellinger, Saeed Yazdani, John W. Freeland, Jian Zhang, Ruihua Cheng, Xiaoshan Xu, Peter Dowben
Magnetic Field Perturbations To A Soft X-Ray-Activated Fe (Ii) Molecular Spin State Transition, Guanhua Hao, Alpha T. N’Diaye, Thilini K. Ekanayaka, Ashley S. Dale, Xuanyuan Jiang, Esha Mishra, Corbyn Mellinger, Saeed Yazdani, John W. Freeland, Jian Zhang, Ruihua Cheng, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
The X-ray-induced spin crossover transition of an Fe (II) molecular thin film in the presence and absence of a magnetic field has been investigated. The thermal activation energy barrier in the soft X-ray activation of the spin crossover transition for [Fe{H2B(pz)2 }2 (bipy)] molecular thin films is reduced in the presence of an applied magnetic field, as measured through X-ray absorption spectroscopy at various temperatures. The influence of a 1.8 T magnetic field is sufficient to cause deviations from the expected exponential spin state transition behavior which is measured in the field free case. We find …
Giant Transport Anisotropy In Res2 Revealed Via Nanoscale Conducting-Path Control, Dawei Li, Shuo Sun, Jingfeng Song, Ding-Fu Shao, Evgeny Y. Tsymbal, Stephen Ducharme, Xia Hong
Giant Transport Anisotropy In Res2 Revealed Via Nanoscale Conducting-Path Control, Dawei Li, Shuo Sun, Jingfeng Song, Ding-Fu Shao, Evgeny Y. Tsymbal, Stephen Ducharme, Xia Hong
Stephen Ducharme Publications
The low in-plane symmetry in layered 1T’-ReS2 results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS2 by creating directional conducting paths via nanoscale ferroelectric control. By reversing the polarization of a ferroelectric polymer top layer, we induce a conductivity switching ratio of >1.5 × 108 in the ReS2 channel at 300 K. Characterizing the domain-defined conducting nanowires in an insulating background shows that the …
High-Frequency And Below Bandgap Anisotropic Dielectric Constants In Α-(AlXGa1-X)2O3 (0≤X≤1), Matthew Hilfiker, Ufuk Kilic, Megan Stokey, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Rafal Korlacki, Mathias Schubert
High-Frequency And Below Bandgap Anisotropic Dielectric Constants In Α-(AlXGa1-X)2O3 (0≤X≤1), Matthew Hilfiker, Ufuk Kilic, Megan Stokey, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Rafal Korlacki, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum α-(AlxGa1-x)2O3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam epitaxy on m-plane sapphire. The spectroscopic ellipsometry measurements were performed at multiple azimuthal angles to resolve the uniaxial dielectric properties. A Cauchy dispersion model was applied, and high-frequency dielectric constants are determined for polarization perpendicular (ε∞,⟂) and parallel (ε∞,∥) to the thin film c-axis. The optical birefringence is negative throughout the …
Spontaneous Fluctuations In A Magnetic Fe/Gd Skyrmion Lattice, M. H. Seaberg, B. Holladay, S. A. Montoya, X. Y. Zheng, J. C.T. Lee, A. H. Reid, J. D. Koralek, L. Shen, V. Esposito, G. Coslovich, P. Walter, S. Zohar, V. Thampy, M. F. Lin, P. Hart, K. Nakahara, R. Streubel, S. D. Kevan, P. Fischer, W. Colocho, A. Lutman, F. J. Decker, E. E. Fullerton, M. Dunne, S. Roy, S. K. Sinha, J. J. Turner
Spontaneous Fluctuations In A Magnetic Fe/Gd Skyrmion Lattice, M. H. Seaberg, B. Holladay, S. A. Montoya, X. Y. Zheng, J. C.T. Lee, A. H. Reid, J. D. Koralek, L. Shen, V. Esposito, G. Coslovich, P. Walter, S. Zohar, V. Thampy, M. F. Lin, P. Hart, K. Nakahara, R. Streubel, S. D. Kevan, P. Fischer, W. Colocho, A. Lutman, F. J. Decker, E. E. Fullerton, M. Dunne, S. Roy, S. K. Sinha, J. J. Turner
Robert Streubel Papers
Magnetic skyrmions are topological spin textures that exhibit classical or quantum quasiparticle behavior. A substantial amount of research has occurred in this field, both because of their unique electromagnetic properties and potential application for future nonvolatile memory storage applications, as well as fundamental questions on their topology and unique magnetic phases. Here, we investigate the fluctuation properties of a magnetic Fe/Gd skyrmion lattice, using short-pulsed x rays. We first measure spontaneous fluctuations of the skyrmion lattice phase and find an inherent, collective mode showing an underdamped oscillation with a relaxation of a couple of nanoseconds. Further observations track the response …
Voltage-Controlled Magnetization In Chromia-Based Magnetic Heterostructures, William Echtenkamp
Voltage-Controlled Magnetization In Chromia-Based Magnetic Heterostructures, William Echtenkamp
Department of Physics and Astronomy: Dissertations, Theses, and Student Research
Spintronics promises a new generation of low-power, high-speed, non-volatile memory and logic devices. Heterostructures based on magnetoelectric chromia enable the direct manipulation of magnetization by applied electric fields and emerged as a promising building block for spintronic devices. In this dissertation, several interesting emergent magnetic properties arising in these device-enabling building blocks are examined. In some cases, exchange coupling at the interface between the magnetoelectric antiferromagnet and an adjacent ferromagnet stabilizes the interfacial antiferromagnetic domain state against the electrically induced rotation of the bulk spin structure. Upon magnetically cycling the ferromagnet, the magnetoelectric antiferromagnet relaxes towards a commensurate spin structure …
Manipulation Of Spin Crossover Phenomenon In An Fe(Ii) Molecular Complex And Application To Molecular Spintronics, Guanhua Hao
Manipulation Of Spin Crossover Phenomenon In An Fe(Ii) Molecular Complex And Application To Molecular Spintronics, Guanhua Hao
Department of Physics and Astronomy: Dissertations, Theses, and Student Research
Molecules with a large local magnetic moment have attracted considerable attention for application in spintronic devices. One candidate of a suitable device goes to the spin crossover molecule, where these 3d transition metal compounds are able to exhibit a robust spin state transition between distinct states. By proper design, the spintronic devices fabricated via spin crossover molecular thin films could achieve novel functionality while retaining flexibility and other traits based on its “organic” nature.
Controlling the spin state transition is a key factor of these possibilities. This thesis work investigates the manipulation of the spin state transition in [Fe{H …
Optical Phonon Modes, Static And High-Frequency Dielectric Constants, And Effective Electron Mass Parameter In Cubic In2O3, Megan Stokey, Rafal Korlacki, Sean Knight, Alexander Ruder, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Yuxuan Zhang, Hongping Zhao, Vanya Darakchieva, Mathias Schubert
Optical Phonon Modes, Static And High-Frequency Dielectric Constants, And Effective Electron Mass Parameter In Cubic In2O3, Megan Stokey, Rafal Korlacki, Sean Knight, Alexander Ruder, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Yuxuan Zhang, Hongping Zhao, Vanya Darakchieva, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic ellipsometry, as well as first principles calculations. Dielectric function spectra measured on high quality, marginally electrically conductive melt grown single bulk crystals are obtained on a wavelength-by-wavelength (also known as point-by-point) basis and by numerical reduction of a subtle free charge carrier Drude model contribution. A four-parameter semi-quantum model is applied to determine all 16 pairs of infrared-active transverse and longitudinal optical phonon modes, including the high-frequency dielectric constant, ε∞=4.05±0.05. The …
Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Peter Dowben Publications
Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support …
Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu
Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu
Peter Dowben Publications
We have studied the epitaxial CoFe2O4 (111) films grown on Al2O3 (0001) substrates of different thickness at various temperature and discovered colossal intrinsic exchange bias up to 7 ± 2 kOe. X-ray and electron diffraction clearly indicate an interfacial layer about 2 nm of different crystal structure from the “bulk” part of the CoFe2O4 film. The thickness dependence of the exchange bias suggests a hidden antiferromagnetic composition in the interfacial layer that couples to the ferrimagnetic “bulk” part of the CoFe2O4 film as the origin of the exchange …
Magnetism And Topological Hall Effect In Antiferromagnetic Ru2Mnsn-Based Heusler Compounds, Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xingzhong Li, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer
Magnetism And Topological Hall Effect In Antiferromagnetic Ru2Mnsn-Based Heusler Compounds, Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xingzhong Li, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer
Nebraska Center for Materials and Nanoscience: Faculty Publications
Heusler compounds and alloys based on them are of great recent interest because they exhibit a wide variety of spin structures, magnetic properties, and electron-transport phenomena. Their properties are tunable by alloying and we have investigated L21-ordered compound Ru2MnSn and its alloys by varying the atomic Mn:Sn composition. While antiferromagnetic ordering with a Néel temperature of 361 K was observed in Ru2MnSn, the Mn-poor Ru2Mn0.8Sn1.2 alloy exhibits properties of a diluted antiferromagnet in which there are localized regions of uncompensated Mn spins. Furthermore, a noncoplanar spin structure, evident from …
Spirals And Skyrmions In Antiferromagnetic Triangular Lattices, Wuzhang Fang, Aldo Raeliarijaona, Po-Hao Chang, Alexey Kovalev, Kirill Belashchenko
Spirals And Skyrmions In Antiferromagnetic Triangular Lattices, Wuzhang Fang, Aldo Raeliarijaona, Po-Hao Chang, Alexey Kovalev, Kirill Belashchenko
Department of Physics and Astronomy: Faculty Publications
We study realizations of spirals and skyrmions in two-dimensional antiferromagnets with a triangular lattice on an inversion-symmetry-breaking substrate. As a possible material realization, we investigate the adsorption of transition-metal atoms (Cr, Mn, Fe, or Co) on a monolayer of MoS2, WS2, or WSe2 and obtain the exchange, anisotropy, and Dzyaloshinskii-Moriya interaction parameters using first-principles calculations. Using energy minimization and parallel-tempering Monte Carlo simulations, we determine the magnetic phase diagrams for a wide range of interaction parameters. We find that skyrmion lattices can appear even with weak Dzyaloshinskii-Moriya interactions, but their stability is hindered by magnetic anisotropy. However, a weak easy …
Voltage-Controlled Magnetic Anisotropy In Antiferromagnetic Mgo-Capped Mnpt Films, P. H. Chang, Wuzhang Fang, T. Ozaki, Kirill Belashchenko
Voltage-Controlled Magnetic Anisotropy In Antiferromagnetic Mgo-Capped Mnpt Films, P. H. Chang, Wuzhang Fang, T. Ozaki, Kirill Belashchenko
Kirill Belashchenko Publications
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is as large as 1.5 and -0.6 pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively. The combination of a widely tunable magnetic anisotropy energy and a large voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.
Correction To "Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films" [The Journal Of Physical Chemistry Letters (2020) 11:19 (8231-8237) Doi: 10.1021/Acs.Jpclett.0c02209], Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha N'Diaye, Peter Dowben, Ruihua Cheng
Correction To "Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films" [The Journal Of Physical Chemistry Letters (2020) 11:19 (8231-8237) Doi: 10.1021/Acs.Jpclett.0c02209], Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha N'Diaye, Peter Dowben, Ruihua Cheng
Peter Dowben Publications
In our recent publication, Figure 5 was published without adequate due diligence. The correct TOC Abstract graphic and Figure 5 are contained here in this correction. The correct on to off current ratios are in the range of 4 to 5, not 100 and the signal to noise ratios are far less than previously shown.
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,20-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, …
Zinc Gallate Spinel Dielectric Function, Band-To-Band Transitions, And Γ-Point Effective Mass Parameters, Matthew J. Hilfiker, Megan Stokey, Rafal Korlacki, Ufuk Kilic, Zbigniew Galazka, Klaus Irmscher, Stefan Zollner, Mathias Schubert
Zinc Gallate Spinel Dielectric Function, Band-To-Band Transitions, And Γ-Point Effective Mass Parameters, Matthew J. Hilfiker, Megan Stokey, Rafal Korlacki, Ufuk Kilic, Zbigniew Galazka, Klaus Irmscher, Stefan Zollner, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the dielectric function of the emerging ultrawide bandgap semiconductor ZnGa2O4 from the near-infrared (0.75 eV) into the vacuum ultraviolet (8.5 eV) spectral regions using spectroscopic ellipsometry on high quality single crystal substrates. We perform density functional theory calculations and discuss the band structure and the Brillouin zone Γ-point band-to-band transition energies, their transition matrix elements, and effective band mass parameters. We find an isotropic effective mass parameter (0.24me) at the bottom of the Γ-point conduction band, which equals the lowest valence band effective mass parameter at the top of the highly anisotropic …
Remote Mesoscopic Signatures Of Induced Magnetic Texture In Graphene, N. Arabchigavkani, R. Somphonsane, H. Ramamoorthy, G. He, J. Nathawat, S. Yin, B. Barut, K. He, M. D. Randle, R. Dixit, K. Sakanashi, N. Aoki, K. Zhang, L. Wang, W. N. Mei, Peter Dowben, J. Fransson, J. P. Bird
Remote Mesoscopic Signatures Of Induced Magnetic Texture In Graphene, N. Arabchigavkani, R. Somphonsane, H. Ramamoorthy, G. He, J. Nathawat, S. Yin, B. Barut, K. He, M. D. Randle, R. Dixit, K. Sakanashi, N. Aoki, K. Zhang, L. Wang, W. N. Mei, Peter Dowben, J. Fransson, J. P. Bird
Peter Dowben Publications
Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this Letter, however, we demonstrate a pronounced breakdown of this universality, due to the interplay of local and remote phenomena in transport. Our experiments are performed in a graphene-based interaction-detection geometry, in which an artificial magnetic texture is induced in the graphene layer by covering a portion of it with a micromagnet. When probing conduction at some distance from this region, the strong influence of remote factors is manifested through the appearance of giant conductance fluctuations, with amplitude much …
Spin Superfluidity In Noncollinear Antiferromagnets, Bo Li, Alexey Kovalev
Spin Superfluidity In Noncollinear Antiferromagnets, Bo Li, Alexey Kovalev
Department of Physics and Astronomy: Faculty Publications
We explore the spin superfluid transport in exchange interaction dominated three-sublattice antiferromagnets. The system in the long-wavelength regime is described by an $SO(3)$ invariant field theory. Additional corrections from Dzyaloshinskii-Moriya interactions or anisotropies can break the symmetry; however, the system still approximately holds a $U(1)$-rotation symmetry. Thus, the power-law spatial decay signature of spin superfluidity is identified in a nonlocal-measurement setup where the spin injection is described by the generalized spin-mixing conductance. We suggest iron jarosites as promising material candidates for realizing our proposal.
Ferromagnetic Liquid Droplets With Adjustable Magnetic Properties, Xuefei Wu, Robert Streubel, Xubo Liu, Paul Y. Kim, Yu Chai, Qin Hu, Dong Wang, Peter Fischer, Thomas P. Russell
Ferromagnetic Liquid Droplets With Adjustable Magnetic Properties, Xuefei Wu, Robert Streubel, Xubo Liu, Paul Y. Kim, Yu Chai, Qin Hu, Dong Wang, Peter Fischer, Thomas P. Russell
Department of Physics and Astronomy: Faculty Publications
The assembly and jamming of magnetic nanoparticles (NPs) at liquid–liquid interfaces is a versatile platform to endow structured liquid droplets with a magnetization, i.e., producing ferromagnetic liquid droplets (FMLDs). Here, we use hydrodynamics experiments to probe how the magnetization of FMLDs and their response to external stimuli can be tuned by chemical, structural, and magnetic means. The remanent magnetization stems from magnetic NPs jammed at the liquid–liquid interface and dispersed NPs magneto-statically coupled to the interface. FMLDs form even at low concentrations of magnetic NPs when mixing nonmagnetic and magnetic NPs, since the underlying magnetic dipole-driven clustering of magnetic NP-surfactants …