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Articles 31 - 37 of 37

Full-Text Articles in Condensed Matter Physics

Why The Crackling Deformations Of Single Crystals, Metallic Glasses, Rock, Granular Materials, And The Earth’S Crust Are So Surprisingly Similar, Karin A. Dahmen, Jonathan T. Uhl, Wendelin J. Wright Nov 2019

Why The Crackling Deformations Of Single Crystals, Metallic Glasses, Rock, Granular Materials, And The Earth’S Crust Are So Surprisingly Similar, Karin A. Dahmen, Jonathan T. Uhl, Wendelin J. Wright

Faculty Journal Articles

Recent experiments show that the deformation properties of a wide range of solid materials are surprisingly similar. When slowly pushed, they deform via intermittent slips, similar to earthquakes. The statistics of these slips agree across vastly different structures and scales. A simple analytical model explains why this is the case. The model also predicts which statistical quantities are independent of the microscopic details (i.e., they are "universal"), and which ones are not. The model provides physical intuition for the deformation mechanism and new ways to organize experimental data. It also shows how to transfer results from one scale to another. …


Proximitized Materials, Igor Žutić, Alex Matos-Abiague, Benedikt Scharf, Hanan Dery, Kirill Belashchenko Jan 2019

Proximitized Materials, Igor Žutić, Alex Matos-Abiague, Benedikt Scharf, Hanan Dery, Kirill Belashchenko

Kirill Belashchenko Publications

Advances in scaling down heterostructures and having an improved interface quality together with atomically thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin–orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization but also can overcome their various limitations. In proximitized materials, it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the …


Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov Oct 2018

Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov

Kirill Belashchenko Publications

A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching


Understanding Electrical Conduction In Lithium Ion Batteries Through Multi-Scale Modeling, Jie Pan Jan 2016

Understanding Electrical Conduction In Lithium Ion Batteries Through Multi-Scale Modeling, Jie Pan

Theses and Dissertations--Chemical and Materials Engineering

Silicon (Si) has been considered as a promising negative electrode material for lithium ion batteries (LIBs) because of its high theoretical capacity, low discharge voltage, and low cost. However, the utilization of Si electrode has been hampered by problems such as slow ionic transport, large stress/strain generation, and unstable solid electrolyte interphase (SEI). These problems severely influence the performance and cycle life of Si electrodes. In general, ionic conduction determines the rate performance of the electrode, while electron leakage through the SEI causes electrolyte decomposition and, thus, causes capacity loss. The goal of this thesis research is to design Si …


Temperature Dependent Surface Reconstruction Of Freely Suspended Films Of 4-N-Heptyloxybenzylidene-4-N-Heptylaniline, Daniel E. Martinez Zambrano Jun 2015

Temperature Dependent Surface Reconstruction Of Freely Suspended Films Of 4-N-Heptyloxybenzylidene-4-N-Heptylaniline, Daniel E. Martinez Zambrano

Lawrence University Honors Projects

Surfaces of freely suspended thick films of 4-n-heptyloxybenzylidene-4-n-heptylaniline (7O.7) in the crystalline-B phase have been imaged using non-contact mode atomic force microscopy. Steps are observed on the surface of the film with a height of 3.0 +/- 0.1 nm corresponding to the upright molecular length of 7O.7. In addition, we find that the step width varies with temperature between 56 and 59 degrees C. The steps are many times wider than the molecular length, suggesting that the steps are not on the surface but instead originate from edge dislocations in the interior. Using a strain model for liquid crystalline layers …


Robust Isothermal Electric Control Of Exchange Bias At Room Temperature, Xi He, Ning Wu, Anthony N. Caruso, Elio Vescovo, Kirill D. Belashchenko, Peter A. Dowben, Christian Binek Jan 2010

Robust Isothermal Electric Control Of Exchange Bias At Room Temperature, Xi He, Ning Wu, Anthony N. Caruso, Elio Vescovo, Kirill D. Belashchenko, Peter A. Dowben, Christian Binek

Kirill Belashchenko Publications

Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with highspeed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr2O3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr2O3 single crystal, we achieve reversible, room-temperature isothermal switching …


Anisotropy Of Exchange Stiffness And Its Effect On The Properties Of Magnets, K. D. Belashchenko Apr 2004

Anisotropy Of Exchange Stiffness And Its Effect On The Properties Of Magnets, K. D. Belashchenko

Kirill Belashchenko Publications

Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo5 alloys. The exchange stiffness is strongly anisotropic in all studied alloys. This anisotropy makes the domain wall surface tension anisotropic. Competition between this anisotropic surface tension and magnetostatic energy controls the formation and dynamics of nanoscale domain structures in hard magnets. Anisotropic domain wall bending is described in detail from the general point of view and with application to cellular Sm–Co magnets. It is shown that the repulsive …