Condensed Matter Physics Commons^™

Modeling The Atomic And Electronic Structure Of Metal-Metal, Metal-Semiconductor And Semiconductor-Oxide Interfaces, Ganesh Krishna Hegde

Open Access Dissertations

The continuous downward scaling of electronic devices has renewed attention on the importance of the role of material interfaces in the functioning of key components in electronic technology in recent times. It has also brought into focus the utility of

atomistic modeling in providing insights from a materials design perspective. In this thesis, a combination of Semi Empirical Tight-Binding (TB), first-principles Density

Functional Theory and Reactive Molecular Dynamics (MD) modeling is used to study aspects of the electronic and atomic structure of three such 'canonical' material interfaces - Metal-Metal, Metal-Semiconductor and Semiconductor oxide interfaces.

An important contribution of this thesis …

Multiscale Study Of Batio3 Nanostructures And Nanocomposites, Lydie Louis Louis

Graduate Theses and Dissertations

Advancements in integrated nanoelectronics will continue to require the use of unique materials or systems of materials with diverse functionalities in increasingly confined spaces.

Hence, research on finite-dimensional systems strive to unearth and expand the knowledge of fundamental physical properties in certain key materials which exhibit numerous concurrent and exploitable functions.

Correspondingly, ferroelectric nanostructures, which particularly display a plethora of complex phenomena, prevalent in countless fields of research, are noteworthy candidates. Presently, however, the assimilation of zero-(0D) and one-dimensional (1D) ferroelectric into micro- or nano-electronics has been lagging, in part due to a lack of applied and fundamental studies but …

Infrared Dielectric Anisotropy And Phonon Modes Of Rutile Tio2, Rafal Korlacki, Stefan Schöche, Tino Hofmann, Tom E. Tiwald, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

Spectroscopic ellipsometry in the mid-infrared and far-infrared spectral range and generalized ellipsometry in the mid-infrared spectral range are used to investigate the anisotropic dielectric response of rutile TiO₂. The ordinary and extraordinary dielectric function tensor components and all infrared active phonon mode parameters of single crystalline rutile TiO₂ are determined with high accuracy for wavelengths from 3 μm to 83 μm. The data were acquired from samples of (001), (100), and (111) surfaces cut from bulk single crystals. A factorized model dielectric function is employed in order to determine the frequencies and damping parameters of the transverse …

Investigation Of Nbnx Thin Films And Nanoparticles Grown By Pulsed Laser Deposition And Thermal Diffusion, Ashraf Hassan Farha

Electrical & Computer Engineering Theses & Dissertations

Niobium nitride films (NbNx) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (λ = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbNx films.

When the …

The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride

Master's Theses

Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …

Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock

Graduate Theses and Dissertations

Graphene, what some are terming the "new silicon", has the possibility of revolutionizing technology through nanoscale design processes. Fabrication of graphene for device processing is limited largely by the temperatures used in conventional deposition. High temperatures are detrimental to device design where many different materials may be present. For this reason, graphene synthesis at low temperatures using plasma-enhanced chemical vapor deposition is the subject of much research. In this thesis, a tool for ultra-high vacuum plasma-enhanced chemical vapor deposition (UHV-PECVD) and accompanying subsystems, such as control systems and alarms, are designed and implemented to be used in future graphene growths. …

Electron Drift-Mobility Measurements In Polycrystalline Cuin1-Xgaxse2 Solar Cells, Steluta A. Dinca, Eric A. Schiff, William N. Shafarman, Brian Egaas, Rommel Noufi, David L. Young

Physics - All Scholarship

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn_1-xGa_xSe₂ films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm^2/Vs and are weakly temperature-dependent from 100–300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm²/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff

Physics - All Scholarship

We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n²+nλ/h (n – film refractive index, λ – optical wavelength, h …

Vibrational Frequencies Of Magnetic Random Access Memory Materials., Lee Li Ling

Student Works (2010-2019)

The advantages of MRAM are so overwhelming which acts as motivation for scientist in further investigation for better read and write operation. The types of materials used are closely related to the cell performance in forming the ferromagnetic layers. Thus,the vibrational frequencies of the MRAM materials are of interest. Clusters for the two types of combinations, FexNiy and FexCoyBz are built. Subsequently, vibrational frequencies of each cluster are calculated theoretically from the first principles. The secular determinant is large when the number of electrons in a cluster is large. For the simplest combination of Fe-Ni cluster, (atomic number of an …

Application And Extension Of Glauber Ising-Spin Dynamics In The Context Of A Single Chain Magnet System, Ryan Tucker Kristensen

Legacy Theses & Dissertations (2009 - 2024)

The Glauber Ising-spin dynamic with a local equilibrium approximation is applied to infinite and finite one-dimensional (anti-)ferromagnetic Ising chains with classic nearest neighbor interactions. The application of the Glauber dynamic and local equilibrium approximation is then extended to the one-dimensional ferrimagnetic chain with nearest neighbor interactions. Time dependant behavior and equilibrium states of the one-dimensional ferrimagnetic chain are then discussed in terms of the single chain magnet referred to as CoPhOMe, whose behavior empirical data to date suggest is consistent with a one-dimensional Ising ferrimagnet.

Reflection High-Energy Electron Diffraction Studies Of Indium Phosphide (100) And Growth On Indium And Indium Nitride On Silicon (100), Mohamed Abd-Elsattar Hafez

Electrical & Computer Engineering Theses & Dissertations

Study of the effects of atomic hydrogen exposure on structure and morphology of semiconductor surfaces is important for fundamental properties and applications. In this dissertation, the electron yield of a hydrogen-cleaned indium phosphide (InP) surface was measured and correlated to the development of the surface morphology, which was monitored by in situ reflection high-energy electron diffraction (RHEED). Atomic hydrogen treatment produced a clean, well-ordered, and (2x4)-reconstructed InP(100) surface. The quantum efficiency, after activation to negative electron affinity, and the secondary electron emission were shown to increase with hydrogen cleaning time. RHEED patterns of low-index InP(100) surface were modified by the …

Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey

Faculty Publications

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (R_X) and quality factor (Q) with the resonators’ silicon layer thickness (t_Si). For identical lateral dimensions and PZT-layer thicknesses (t_PZT), the PZT-on-silicon resonator has higher resonant frequency (f_C), higher Q (5100 versus 140), lower R_X (51 Ω versus 205 Ω), and better linearity [third-order input intercept …

Investigation Of The Superconducting Properties Of Niobium Radio-Frequency Cavities, Gianluigi Ciovati

Physics Theses & Dissertations

Radio-frequency (rf) superconducting cavities are widely used to increase the energy of a charged particle beam in particle accelerators. The maximum gradients of cavities made of bulk niobium have constantly improved over the last ten years and they are approaching the theoretical limit of the material. Nevertheless, rf tests of niobium cavities are still showing some "anomalous" losses (so-called "Q-drop"), characterized by a marked increase of the surface resistance at high rf fields, in absence of field emission. A low temperature "in-situ" baking under ultra-high vacuum has been successfully applied by several laboratories to reduce those losses and …

Condensation On (002) Graphite Of Liquid Bismuth Far Below Its Bulk Melting Point, M. K. Zayed, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Condensation of thermally evaporated Bi on (002) graphite, at temperatures of 300-523K, was studied using in situ reflection high-energy electron diffraction (RHEED) and room temperature ex situ atomic force microscopy (AFM). For deposition at temperatures below 415±5K, transmission RHEED patterns of Bi appeared at an average thickness of ∼0.5 monolayer (ML). AFM images showed that the film consisted of crystallites in the shape of triangular step pyramids with step heights corresponding to single and double Bi layers in the [111] direction. This morphology indicates crystallization from the vapor. For deposition at higher temperatures, diffuse RHEED patterns appeared independent of the …

Oxidation-Induced Stacking Fault In (100) And (111) Silicon Wafers, Mei Keat Liang

Student Works (2000-2009)

Oxidation-induced stacking fault (OISF) dimension and density change on (100) and (111) wafers, as a result of repeated preferential etching were studied using AFM. optical microscope and angular polishing techniques. Density on (100) and (111) wafers is independent of surface removal up to 3.0µm. This indicates the single layer nature of OISF formed from the sand blasted wafer. Besides having higher density, OISFs from (100) wafer were longer than OISF from (111) wafer. OISF width increases linearly with surface removal however the length does not change significantly with surface removal. ln the OISF normal depth studies using angular polishing technique, …

Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim

Student Works (2000-2009)

Hydrogenated amorphous silicon (a.Si:H) was prepared using the d.c plasma grow discharge system. Two sets of samples were prepared and studied. The first set of samples referred to as the high argon dilution films were prepared from the discharge of pure silane at flow-rate of 5sccm and silane at the same flow-rate diluted in argon at flow-rates of 5, 10 and 15sccm. Similarly, the second set of sample referred to as the low argon dilution films were prepared from the discharge of pure silane at flow-rate of20sccm and silane at the same flow-rate diluted in argon at the flow-rates mentioned …

Time-Resolved Structural Study Of Low-Index Surfaces Of Germanium Near Its Bulk Melting Temperature, Xinglin Zeng, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The structure of the low-index surfaces of germanium near its bulk melting temperature is investigated using 100-ps time-resolved reflection high-energy electron diffraction. The surface is heated by 100-ps laser pulses while a synchronized electron beam probes the structure. Ge(111)was observed to remain in its incomplete melting structure up to at least T_m + 134 ± 40 K when heated by a 100-ps laser pulse. Both the Ge(100) and Ge(110) surfaces are observed to melt near the bulk melting temperature when heated with 100-ps laser pulses. Because of the low-diffraction intensity-to-background ratio at high temperatures and because of the temperature …

Mössbauer Effect Determination Of Relative Recoilless Fractions For Iron Oxides, Sei J. Oh, Desmond C. Cook

Physics Faculty Publications

The relative recoilless fraction (F-value) of each of six iron oxides, defined as the ratio of the recoil-free fractions of two different materials, was experimentally determined relative to hematite at 300 K and 77 K by Mössbauer spectroscopy. Using the relative recoil-free fractions compared to that of hematite, the relative recoilless fractions between all pairs of the seven iron oxides were determined. The F-values can allow conversion of Mössbauer subspectral areas to the relative atomic, molecular, or weight fractions of each iron oxide present in a mixed oxide phase sample.

Time-Resolved Reflection High-Energy Electron Diffraction Study Of The Ge(111)-C(2×8)-(1×1) Phase Transition, Xinglin Zeng, Bo Lin, Ibrahim El-Kholy, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The dynamics of the Ge(111)-c(2×8)-(1×1) phase transition is investigated by 100-ps time-resolved reflection high-energy electron diffraction. A laser pulse heats the surface while a synchronized electron pulse is used to obtain the surface diffraction pattern. Slow heating shows that the adatoms in Ge(111)-c(2×8) start to disorder at ∼510 K and are converted to a disordered adatom arrangement at 573 K. For heating with 100-ps laser pulses, the Ge(111)-c(2×8) reconstructed adatom arrangement starts to disorder at 584±16K, well above the onset temperature of ∼510 K for the disordering of Ge(111)-c(2×8) observed for slow …

Surface Morphology Of Laser-Superheated Pb(111) And Pb(100), Z. H. Zhang, Bo Lin, X. L. Zeng, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The surface step density on the vicinal Pb(111) and the surface vacancy density on Pb(100) after laser superheating and melting are investigated using reflection high-energy electron diffraction. With ∼100-ps laser pulses, Pb(111) surface superheating does not significantly change the density of the steps and step-edge roughness. However, after laser surface melting, the average terrace width and the string length at the step edge become as large as those at room temperature. The average terrace width at 573 K changes from 38±15 to 64±19 Å after laser surface melting, while the average string length at the step edge changes from 90±14 …

Temperature Dependence Of Step Density On Vicinal Pb(111), Z. H. Zhang, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The temperature dependence of step density on the vicinal Pb(111) surface is investigated using reflection high-energy electron diffraction. When the temperature is increased from 323 to 590 K. the average terrace width and the average string length at the step edge decrease from 85±25 to 37±16 Å and from 220±33 to 25±8 Å, respectively. Thermal step collapse on the Pb(111) surface near its bulk melting temperature is not observed. Above 530±7 K, the change in the string length at the step edge with temperature becomes small, and the intensity of the (00) beam is significantly decreased. We conclude that partial …

Femtosecond Photoemission Study Of Ultrafast Electron Dynamics In Single-Crystal Au(111) Films, J. Cao, Y. Gao, H. E. Elsayed-Ali, R. J. D. Miller, D. A. Mantell

Electrical & Computer Engineering Faculty Publications

The energy-dependent relaxation of photoexcited electrons has been measured by time-resolved two-photon photoemission spectroscopy on single-crystal Au(111) films with thickness ranging from 150 to 3000 Å. It is found that the energy-dependent relaxation does not show any significant thickness dependence, which indicates that electron transport is a much slower dynamical process in the near-surface region than expected from bulk properties. Furthermore, lifetimes of the photoexcited electrons can be fitted well by the Fermi-liquid theory with a scaling factor plus an effective upper lifetime. This observation enables separation of electron-electron scattering, and to a lesser extent electron-phonon scattering, processes from electron-transport …

Femtosecond Photoemission Study Of Ultrafast Electron Dynamics On Cu(100), J. Cao, Y. Gao, R. J. D. Miller, Hani E. Elsayed-Ali, D. A. Mantell

Electrical & Computer Engineering Faculty Publications

The energy dependence of the relaxation of photoexcited electrons in copper was measured using femtosecond time-resolved photoemission spectroscopy to within 0.3 eV above the Fermi level. By performing lifetime measurements under different surface conditions, several surface dynamical processes were investigated. In particular, an anomalous long lifetime feature, which cannot be explained with Fermi-liquid theory, was observed in the lifetime-energy curve. This feature was found originating from the photoexcitation of the strongly localized Cu 3d electrons. ©1997 American Physical Society

Reflection High-Energy Electron-Diffraction Study Of Melting And Solidification Of Pb On Graphite, Z. H. Zhang, P. Kulatunga, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The melting and solidification of Pb thin films on pyrolytic graphite are investigated in situ by reflection high-energy electron diffraction. Thin films with thicknesses of 4-150 monolayers are investigated. The surface morphology of the thin films were studied by scanning electron microscopy. Superheating of the Pb thin films by 4±2 to 12±2 K is observed from diffraction intensity measurements. Upon cooling the substrate, the Pb on graphite is seen to supercool by ∼69±4 K.

Compensation And Characterization Of Gallium Arsenide, Randy A. Roush

Electrical & Computer Engineering Theses & Dissertations

The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu

Electrical & Computer Engineering Faculty Publications

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.

Reflection High-Energy Electron-Diffraction Study Of Surface Disorder And Anomalous Expansion Of Pb(100), D. Tang, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The temperature-dependent surface structural behavior of Pb(100) is studied using reflection high-energy electron diffraction. Anomalous surface expansion for temperatures between room temperature to about 500 K is observed. A high density of surface vacancies appears at temperatures above ~ 500 K. © 1994 The American Physical Society.

Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron

Electrical & Computer Engineering Faculty Publications

The transport of femtosecond-laser-excited nonequilibrium electrons across polycrystalline and single-crystalline gold films has been investigated through time-of-flight measurements. The thicknesses of the films range from 25 to 400 nm. Ballistic electrons as well as electrons interacting with other electrons and/or with the lattice have been observed. The ballistic component dominates the transport in the thinner films, whereas the interactive transport mechanism is dominant at the upper end of the thickness range. A slower effective velocity of the interactive component is observed in the polycrystalline samples, and is assumed to arise from the presence of grain boundaries. The reflection coefficient of …

Magnetic-Field Distributions In Zinc-Nickel Ferrite, T. A. Dooling, Desmond C. Cook

Physics Faculty Publications

The Mössbauer effect has been used to study the microscopic magnetic properties of the cubic microwave ferrite (Zn_0.41Ni_0.59)Fe₂O₄ at 300 K. The magnetically split spectrum is broad and unresolved due to the overlap of the hyperfine magnetic fields at the tetrahedral and octahedral sites. This is caused by a distribution of magnetic fields at each site. The distribution is especially large and asymmetric at the octahedral site and is due to the fact that the iron atoms at this site are influenced by the presence of both iron and zinc at the tetrahedral …

Phase Changes In Plasma‐Sprayed Zinc‐Nickel Ferrite, T. A. Dooling, Desmond C. Cook

Physics Faculty Publications

The magnetic and crystalline properties of a plasma‐sprayed coating of the microwave absorbing zinc‐nickel ferrite, (Zn_0.41Ni_0.59 )Fe₂O₄ have been studied at 300 K using the Mössbauer effect and x‐ray diffraction (XRD). Both techniques indicate that the plasma‐sprayed material separated into two phases. The first is a nickel‐rich phase with magnetic fields of 47.5 and 44.5 T at the tetrahedral and octahedral sites, respectively. The second is a zinc‐rich phase, zinc meta‐ferrite, having a small magnetic field of 4.2 T. The quadrupole splitting of this second phase is ΔE=0.34 mm s⁻¹, …