Open Access. Powered by Scholars. Published by Universities.®

Condensed Matter Physics Commons™

Open Access. Powered by Scholars. Published by Universities.®

Atomic, Molecular and Optical Physics

Institution
Keyword
Publication Year
Publication
Publication Type
File Type

Articles 301 - 303 of 303

Full-Text Articles in Condensed Matter Physics

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu Jan 1995

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu

Electrical & Computer Engineering Faculty Publications

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.

Go to article

Photorefraction In Batio3, Stephen Ducharme Dec 1986

Photorefraction In Batio3, Stephen Ducharme

Stephen Ducharme Publications

This thesis summarizes the results of experimental investigations of the photorefractive properties of melt-grown BaTiO3 single crystals. Three basic photorefractive material properties are studied: (1) the effective density of photorefractive charges, (2) the photoconductivity of the photorefractive charges, and (3) the relative contributions of electron and hole photoconduction. Volume holographic measurement techniques are used: two-beam energy coupling, four-wave mixing, and erasure of volume holograms. The photorefractive properties were altered experimentally by chemically reducing or oxidizing a BaTiO3 crystal. I have extended the “hopping conduction” model of photorefractive transport to include simultaneous electron and hole photoconduction. The extension of …

Go to article

Evidence For The Existence Of Two Stable Sites For Cobalt Impurity Atoms In Aluminum, Arun Venkatachar Aug 1971

Evidence For The Existence Of Two Stable Sites For Cobalt Impurity Atoms In Aluminum, Arun Venkatachar

Dissertations and Theses

Using Fe57Mössbauer spectroscopy, two alternative sites occupied by cobalt (10-4 at. % ) impurity atoms in aluminum have been isolated. The substitutional site A is the stable position after annealing the sample above 840 K, followed by a rapid quench. The impurity atoms in site A are characterized by a single line Mössbauer spectrum (indicative of a cubic environment), a room-temperature f = 0.502 (r. m. s. displ. 0.071 A) and an I. S. (reI. to Fe) = -0.421 mm/sec. For anneals below 770 K the cobalt atoms migrate to site B, which is characterized by a …

Go to article

First Prev